MD4377C1 - Semiconductor photoelectric converter and method for manufacturing thereof - Google Patents
Semiconductor photoelectric converter and method for manufacturing thereofInfo
- Publication number
- MD4377C1 MD4377C1 MDA20100068A MD20100068A MD4377C1 MD 4377 C1 MD4377 C1 MD 4377C1 MD A20100068 A MDA20100068 A MD A20100068A MD 20100068 A MD20100068 A MD 20100068A MD 4377 C1 MD4377 C1 MD 4377C1
- Authority
- MD
- Moldova
- Prior art keywords
- photoelectric converter
- current
- solder
- semiconductor layer
- semiconductor
- Prior art date
Links
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention relates to solar radiation-to-electric energy conversion technique, in particular to the design of contacts and the chemical composition of materials used in the manufacture of conductive and semiconductor elements of the photoelectric converter.The semiconductor photoelectric converter comprises a semiconductor layer, on the front surface of which are applied metal current-collecting contacts and a layer of organosilicon adhesive, and on the back surface is applied a solder layer. The semiconductor layer is made of silicon nanocrystals, the crystallographic planes of which are oriented in one direction. The tin-lead solder comprises antimony in an amount of 3…4% of the alloy weight. The current-collecting contacts are made of iron-cobalt or iron-cadmium galvanic alloy, and the protective coating of organosilicon adhesive of a thickness of 0.17…0.2 mm is applied on all surfaces of the converter.The method for manufacturing the semiconductor photoelectric converter consists in that silicon nanocrystals are oriented by rotating an external electrostatic field source around the semiconductor layer and is experimentally determined the angle under which is fixed the external electrostatic field source. It is melt the film of tin-lead solder, doped with antimony, are deposited the solder oriented silicon nanocrystals while concomitantly alloying one part of nanocrystals with antimony and the solder is cooled. The obtained plate is immersed in a plating bath with electrolyte and is carried out the anodic treatment of the front surface of the semiconductor layer for 25 s at a current density amplitude of 55…60 A/dm2. It is fixed a stencil to the cleaned from oxides and impurities front surface of the obtained plate, is cathodically connected the plate to a periodic current source with reverse amplitude and width adjustable pulse and at a ratio of the cathode and anode current pulse amplitudes equal to 6:1, for 3 min is increased the density of the direct pulse from 0 to 40 A/dm2 and is deposited the galvanic alloy during 12…20 min at the prescribed current ratio. The resulting photoelectric converter is washed with distilled water at a temperature of ~ 330K, dried, immersed in organosilicon adhesive, removed from the container with the adhesive and dried for 10 minutes in a drying room at a temperature of 360K.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
MDA20100068A MD4377C1 (en) | 2010-05-19 | 2010-05-19 | Semiconductor photoelectric converter and method for manufacturing thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
MDA20100068A MD4377C1 (en) | 2010-05-19 | 2010-05-19 | Semiconductor photoelectric converter and method for manufacturing thereof |
Publications (3)
Publication Number | Publication Date |
---|---|
MD20100068A2 MD20100068A2 (en) | 2011-11-30 |
MD4377B1 MD4377B1 (en) | 2015-10-31 |
MD4377C1 true MD4377C1 (en) | 2016-05-31 |
Family
ID=45815309
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
MDA20100068A MD4377C1 (en) | 2010-05-19 | 2010-05-19 | Semiconductor photoelectric converter and method for manufacturing thereof |
Country Status (1)
Country | Link |
---|---|
MD (1) | MD4377C1 (en) |
Citations (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2507822A1 (en) * | 1979-05-29 | 1982-12-17 | Photowatt International | Polycrystalline silicon solar cells prodn. - by exposing to unipolar microwaves to diffuse dopant |
US5340410A (en) * | 1991-11-08 | 1994-08-23 | Siemens Aktiengesellschaft | Method for manufacturing polycrystalline silicon thin-film solar cells |
US5731213A (en) * | 1992-07-28 | 1998-03-24 | Kabushiki Kaisha Toshiba | Semiconductor light receiving device and method of manufacturing the same |
US5800611A (en) * | 1997-09-08 | 1998-09-01 | Christensen; Howard | Method for making large area single crystal silicon sheets |
RU2127472C1 (en) * | 1996-03-28 | 1999-03-10 | Всероссийский научно-исследовательский институт электрификации сельского хозяйства | Method for production of semiconductor photodetector |
RU2144718C1 (en) * | 1999-06-24 | 2000-01-20 | Государственный научный центр РФ Институт медико-биологических проблем | Semiconductor photoelectric solar energy converter for space vehicles |
US6057507A (en) * | 1998-09-10 | 2000-05-02 | Jx Crystals Inc. | Coarse grain polycrystalline gallium antimonide thermophotovoltaic cell |
JP2002211996A (en) * | 2000-11-15 | 2002-07-31 | Deutsche Solar Gmbh | Polycrystalline silicon containing active grain boundary in low percentage |
JP2003188398A (en) * | 2001-12-18 | 2003-07-04 | Mitsubishi Heavy Ind Ltd | Photoelectric converting apparatus and evaluating method for crystalline silicon thin film |
WO2003105239A2 (en) * | 2002-06-07 | 2003-12-18 | Daimlerchrysler Ag | Solar cell and method for production thereof |
RU2227343C2 (en) * | 2001-11-27 | 2004-04-20 | Миловзоров Дмитрий Евгеньевич | Thin films of hydrogenized polycrystalline silicon and technology of their production |
JP2004134432A (en) * | 2002-10-08 | 2004-04-30 | Sanyo Electric Co Ltd | Photoelectric converter |
US20060237719A1 (en) * | 2002-10-30 | 2006-10-26 | Hewlett-Packard Development Company, L.P. | Electronic components |
RU2303830C2 (en) * | 2005-03-21 | 2007-07-27 | Общество с ограниченной ответственностью "СОЛЭКС"(ООО "СОЛЭКС") | Thick-film contact of silicon photoelectric converter and its manufacturing process |
EP2136410A1 (en) * | 1997-08-21 | 2009-12-23 | Kaneka Corporation | Thin film photoelectric converter |
US20100075456A1 (en) * | 2008-09-19 | 2010-03-25 | Angel Sanjurjo | Method and system for producing films for devices such as solar cells from semiconductor powders or dust |
RU2009144623A (en) * | 2009-12-01 | 2011-06-10 | Закрытое акционерное общество "Воронежский центр микроэлектроники" (RU) | SOLAR ELEMENT AND METHOD FOR ITS MANUFACTURE |
-
2010
- 2010-05-19 MD MDA20100068A patent/MD4377C1/en not_active IP Right Cessation
Patent Citations (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2507822A1 (en) * | 1979-05-29 | 1982-12-17 | Photowatt International | Polycrystalline silicon solar cells prodn. - by exposing to unipolar microwaves to diffuse dopant |
US5340410A (en) * | 1991-11-08 | 1994-08-23 | Siemens Aktiengesellschaft | Method for manufacturing polycrystalline silicon thin-film solar cells |
US5731213A (en) * | 1992-07-28 | 1998-03-24 | Kabushiki Kaisha Toshiba | Semiconductor light receiving device and method of manufacturing the same |
RU2127472C1 (en) * | 1996-03-28 | 1999-03-10 | Всероссийский научно-исследовательский институт электрификации сельского хозяйства | Method for production of semiconductor photodetector |
EP2136410A1 (en) * | 1997-08-21 | 2009-12-23 | Kaneka Corporation | Thin film photoelectric converter |
US5800611A (en) * | 1997-09-08 | 1998-09-01 | Christensen; Howard | Method for making large area single crystal silicon sheets |
US6057507A (en) * | 1998-09-10 | 2000-05-02 | Jx Crystals Inc. | Coarse grain polycrystalline gallium antimonide thermophotovoltaic cell |
RU2144718C1 (en) * | 1999-06-24 | 2000-01-20 | Государственный научный центр РФ Институт медико-биологических проблем | Semiconductor photoelectric solar energy converter for space vehicles |
JP2002211996A (en) * | 2000-11-15 | 2002-07-31 | Deutsche Solar Gmbh | Polycrystalline silicon containing active grain boundary in low percentage |
RU2227343C2 (en) * | 2001-11-27 | 2004-04-20 | Миловзоров Дмитрий Евгеньевич | Thin films of hydrogenized polycrystalline silicon and technology of their production |
JP2003188398A (en) * | 2001-12-18 | 2003-07-04 | Mitsubishi Heavy Ind Ltd | Photoelectric converting apparatus and evaluating method for crystalline silicon thin film |
WO2003105239A2 (en) * | 2002-06-07 | 2003-12-18 | Daimlerchrysler Ag | Solar cell and method for production thereof |
JP2004134432A (en) * | 2002-10-08 | 2004-04-30 | Sanyo Electric Co Ltd | Photoelectric converter |
US20060237719A1 (en) * | 2002-10-30 | 2006-10-26 | Hewlett-Packard Development Company, L.P. | Electronic components |
RU2303830C2 (en) * | 2005-03-21 | 2007-07-27 | Общество с ограниченной ответственностью "СОЛЭКС"(ООО "СОЛЭКС") | Thick-film contact of silicon photoelectric converter and its manufacturing process |
US20100075456A1 (en) * | 2008-09-19 | 2010-03-25 | Angel Sanjurjo | Method and system for producing films for devices such as solar cells from semiconductor powders or dust |
RU2009144623A (en) * | 2009-12-01 | 2011-06-10 | Закрытое акционерное общество "Воронежский центр микроэлектроники" (RU) | SOLAR ELEMENT AND METHOD FOR ITS MANUFACTURE |
Also Published As
Publication number | Publication date |
---|---|
MD20100068A2 (en) | 2011-11-30 |
MD4377B1 (en) | 2015-10-31 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
KA4A | Patent for invention lapsed due to non-payment of fees (with right of restoration) | ||
MM4A | Patent for invention definitely lapsed due to non-payment of fees |