KR980006369A - Method for forming charge storage electrode of semiconductor device - Google Patents
Method for forming charge storage electrode of semiconductor device Download PDFInfo
- Publication number
- KR980006369A KR980006369A KR1019960024978A KR19960024978A KR980006369A KR 980006369 A KR980006369 A KR 980006369A KR 1019960024978 A KR1019960024978 A KR 1019960024978A KR 19960024978 A KR19960024978 A KR 19960024978A KR 980006369 A KR980006369 A KR 980006369A
- Authority
- KR
- South Korea
- Prior art keywords
- silicon layer
- charge storage
- storage electrode
- silicon
- forming
- Prior art date
Links
Landscapes
- Semiconductor Integrated Circuits (AREA)
- Semiconductor Memories (AREA)
Abstract
본 발명은 반도체 소자의 전하 저장전극 형성방법을 제공하는 것으로, 도프드 실리콘 및 언도프드 실리콘을 순차적으로 반복하여 패터닝한 후 이 도프드 실리콘 및 언도프드 실리콘의 식각 선택비를 이용한 습식 식각공정으로 다수개의 핀 구조를 갖는 전하 저장전극을 형성하므로써 정전용량을 증가시킬 수 있으며, 또한 공정의 간단화로 인하여 소자의 수율을 향상시킬 수 있는 효과가 있다.The present invention provides a method of forming a charge storage electrode of a semiconductor device, wherein a wet etching process using an etch selectivity ratio of the doped silicon and the undoped silicon after patterning the doped silicon and the undoped silicon sequentially, The charge storage electrode having the fin structure can be formed to increase the capacitance, and the yield of the device can be improved due to the simplification of the process.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is a trivial issue, I did not include the contents of the text.
제2a내지 제2d도는 본 발명에 따른 반도체 소자의 전하 저장전극 형성방법을 설명하기 위한 소자의 단면도.Figs. 2a to 2d are sectional views of a device for explaining a method of forming a charge storage electrode of a semiconductor device according to the present invention.
Claims (5)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019960024978A KR980006369A (en) | 1996-06-28 | 1996-06-28 | Method for forming charge storage electrode of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019960024978A KR980006369A (en) | 1996-06-28 | 1996-06-28 | Method for forming charge storage electrode of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
KR980006369A true KR980006369A (en) | 1998-03-30 |
Family
ID=66241275
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019960024978A KR980006369A (en) | 1996-06-28 | 1996-06-28 | Method for forming charge storage electrode of semiconductor device |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR980006369A (en) |
-
1996
- 1996-06-28 KR KR1019960024978A patent/KR980006369A/en not_active Application Discontinuation
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR920018951A (en) | Highly Integrated Semiconductor Memory Device and Manufacturing Method Thereof | |
KR970077642A (en) | Method for manufacturing capacitor of semiconductor device | |
KR980006369A (en) | Method for forming charge storage electrode of semiconductor device | |
KR0151257B1 (en) | Method for manufacturing a semiconductor memory device | |
KR980005626A (en) | Method of forming a contact of a semiconductor device | |
KR970077641A (en) | Method for manufacturing capacitor of semiconductor device | |
KR100306902B1 (en) | Method for manufacturing capacitor of semiconductor device | |
KR930011260A (en) | Method for manufacturing charge storage electrode with increased surface area | |
KR970024321A (en) | Method of fabricating a capacitor of a semiconductor device | |
KR950021595A (en) | Capacitor Formation Method of Semiconductor Device | |
KR980006357A (en) | Method of forming a capacitor of a DRAM | |
KR970053999A (en) | Formation method of capacitor electrode of semiconductor device | |
KR980005564A (en) | Method for forming charge storage electrode of semiconductor memory device | |
KR980006382A (en) | Method for manufacturing capacitor of semiconductor device | |
KR950004539A (en) | Semiconductor Memory and Manufacturing Method | |
KR970063735A (en) | Method for forming charge storage electrode of semiconductor device | |
KR980006374A (en) | Semiconductor capacitor manufacturing method | |
KR980006255A (en) | Method for forming charge storage electrode of semiconductor memory device | |
KR930011224A (en) | Capacitor Manufacturing Method of Semiconductor Memory | |
KR970072417A (en) | Method for manufacturing capacitor of semiconductor device | |
KR19980037660A (en) | Wiring of Semiconductor Devices and Manufacturing Method Thereof | |
KR950024267A (en) | Method and structure of contact part formation during metal wiring of semiconductor device | |
KR910010746A (en) | Stacking capacitor and manufacturing method of DRAM cell | |
KR19980043790A (en) | 2cylindrical capacitor manufacturing method | |
KR970063758A (en) | Method of manufacturing semiconductor device |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
WITN | Withdrawal due to no request for examination |