KR980005689A - Semiconductor device manufacturing method - Google Patents

Semiconductor device manufacturing method Download PDF

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Publication number
KR980005689A
KR980005689A KR1019960026508A KR19960026508A KR980005689A KR 980005689 A KR980005689 A KR 980005689A KR 1019960026508 A KR1019960026508 A KR 1019960026508A KR 19960026508 A KR19960026508 A KR 19960026508A KR 980005689 A KR980005689 A KR 980005689A
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KR
South Korea
Prior art keywords
plasma etching
semiconductor device
rinsing
film
oxide film
Prior art date
Application number
KR1019960026508A
Other languages
Korean (ko)
Inventor
최승봉
Original Assignee
김주용
현대전자산업 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 김주용, 현대전자산업 주식회사 filed Critical 김주용
Priority to KR1019960026508A priority Critical patent/KR980005689A/en
Publication of KR980005689A publication Critical patent/KR980005689A/en

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Abstract

본 발명은 도핑된 폴리실리콘막상의 자연 산화막 제거방법에 있어서, 챔버 내부에 특정한 가스를 주입하여 플라즈마 식각하는 단계; 웨이퍼에 순수를 고압으로 플로우시키면서 마이크로 웨이브를 발생시켜 린스하는 단계를 포함해서 이루어진 반도체 소자 제조방법에 관한 것으로, CF4가스에 의한 플라즈마 식각 및 마이크로 웨이브에 의한 고압 린스 공정에 의해 단차진 지역의 자연 산화막을 효과적으로 제거함으로써, 후속 실리사이드막 형성 공정시 실리사이드막이 들뜨게 되는 필링(Peeling) 현상이나, 패턴 형성을 위한 식각 공정 후 발생하는 잔류물에 의한 소자의 불량을 방지할 수 있어 소자의 수율과 신뢰성을 향상시킬수 있다.The present invention provides a method for removing a native oxide film on a doped polysilicon film, the method comprising: plasma etching a specific gas into a chamber; The present invention relates to a method for manufacturing a semiconductor device, which comprises a step of rinsing a wafer with pure water flowing at a high pressure while generating microwaves, and performing a rinsing process by plasma etching using CF 4 gas and a microwave- By effectively removing the oxide film, it is possible to prevent the peeling phenomenon in which the silicide film is excited during the subsequent silicide film formation process and the defective device due to the residue generated after the etching process for pattern formation, .

Description

반도체 소자 제조방법Semiconductor device manufacturing method

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is a trivial issue, I did not include the contents of the text.

Claims (3)

도핑된 폴리실리콘막상의 자연 산화막 제거방법에 있어서, 챔버 내부에 특정한 가스를 주입하여 플라즈마 식각하는 단계; 웨이퍼에 순수를 고압으로 플로우시키면서 마이크로 웨이브를 발생시켜 린스하는 단계를 포함해서 이루어진 반도체 소자 제조방법.A method for removing a native oxide film on a doped polysilicon film, comprising: plasma etching a specific gas into a chamber; And a step of rinsing the wafer by generating microwaves while flowing pure water at a high pressure. 제1항에 있어서, 상기 플라즈마 식각하는 챔버 내부의 압력이 1Torr, RF 전력이 250와트(Watt)인 것을 특징으로 하는 반도체 소자 제조방법.The method of claim 1, wherein the pressure inside the chamber for plasma etching is 1 Torr and the RF power is 250 watts. 제1항에 있어서, 상기 플라즈마 식각은 10 내지 20초 동안 진행하여 상기 폴리실리콘막을 약 200Å 내지 300Å정도 제거하는 것을 특징으로 하는 반도체 소자 제조방법.2. The method of claim 1, wherein the plasma etching is performed for 10 to 20 seconds to remove the polysilicon film by about 200 to 300 ANGSTROM. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: It is disclosed by the contents of the first application.
KR1019960026508A 1996-06-29 1996-06-29 Semiconductor device manufacturing method KR980005689A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019960026508A KR980005689A (en) 1996-06-29 1996-06-29 Semiconductor device manufacturing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019960026508A KR980005689A (en) 1996-06-29 1996-06-29 Semiconductor device manufacturing method

Publications (1)

Publication Number Publication Date
KR980005689A true KR980005689A (en) 1998-03-30

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019960026508A KR980005689A (en) 1996-06-29 1996-06-29 Semiconductor device manufacturing method

Country Status (1)

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KR (1) KR980005689A (en)

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