KR980005689A - Semiconductor device manufacturing method - Google Patents
Semiconductor device manufacturing method Download PDFInfo
- Publication number
- KR980005689A KR980005689A KR1019960026508A KR19960026508A KR980005689A KR 980005689 A KR980005689 A KR 980005689A KR 1019960026508 A KR1019960026508 A KR 1019960026508A KR 19960026508 A KR19960026508 A KR 19960026508A KR 980005689 A KR980005689 A KR 980005689A
- Authority
- KR
- South Korea
- Prior art keywords
- plasma etching
- semiconductor device
- rinsing
- film
- oxide film
- Prior art date
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- Drying Of Semiconductors (AREA)
Abstract
본 발명은 도핑된 폴리실리콘막상의 자연 산화막 제거방법에 있어서, 챔버 내부에 특정한 가스를 주입하여 플라즈마 식각하는 단계; 웨이퍼에 순수를 고압으로 플로우시키면서 마이크로 웨이브를 발생시켜 린스하는 단계를 포함해서 이루어진 반도체 소자 제조방법에 관한 것으로, CF4가스에 의한 플라즈마 식각 및 마이크로 웨이브에 의한 고압 린스 공정에 의해 단차진 지역의 자연 산화막을 효과적으로 제거함으로써, 후속 실리사이드막 형성 공정시 실리사이드막이 들뜨게 되는 필링(Peeling) 현상이나, 패턴 형성을 위한 식각 공정 후 발생하는 잔류물에 의한 소자의 불량을 방지할 수 있어 소자의 수율과 신뢰성을 향상시킬수 있다.The present invention provides a method for removing a native oxide film on a doped polysilicon film, the method comprising: plasma etching a specific gas into a chamber; The present invention relates to a method for manufacturing a semiconductor device, which comprises a step of rinsing a wafer with pure water flowing at a high pressure while generating microwaves, and performing a rinsing process by plasma etching using CF 4 gas and a microwave- By effectively removing the oxide film, it is possible to prevent the peeling phenomenon in which the silicide film is excited during the subsequent silicide film formation process and the defective device due to the residue generated after the etching process for pattern formation, .
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is a trivial issue, I did not include the contents of the text.
Claims (3)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019960026508A KR980005689A (en) | 1996-06-29 | 1996-06-29 | Semiconductor device manufacturing method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019960026508A KR980005689A (en) | 1996-06-29 | 1996-06-29 | Semiconductor device manufacturing method |
Publications (1)
Publication Number | Publication Date |
---|---|
KR980005689A true KR980005689A (en) | 1998-03-30 |
Family
ID=66240474
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019960026508A KR980005689A (en) | 1996-06-29 | 1996-06-29 | Semiconductor device manufacturing method |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR980005689A (en) |
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1996
- 1996-06-29 KR KR1019960026508A patent/KR980005689A/en not_active Application Discontinuation
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