KR980005359A - 반도체 소자의 제조방법 - Google Patents

반도체 소자의 제조방법 Download PDF

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Publication number
KR980005359A
KR980005359A KR1019960022832A KR19960022832A KR980005359A KR 980005359 A KR980005359 A KR 980005359A KR 1019960022832 A KR1019960022832 A KR 1019960022832A KR 19960022832 A KR19960022832 A KR 19960022832A KR 980005359 A KR980005359 A KR 980005359A
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KR
South Korea
Prior art keywords
forming
oxide film
polysilicon layer
semiconductor device
manufacturing
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Application number
KR1019960022832A
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English (en)
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KR100246777B1 (ko
Inventor
박민규
Original Assignee
김주용
현대전자산업주식회사
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Priority to KR1019960022832A priority Critical patent/KR100246777B1/ko
Publication of KR980005359A publication Critical patent/KR980005359A/ko
Application granted granted Critical
Publication of KR100246777B1 publication Critical patent/KR100246777B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/32051—Deposition of metallic or metal-silicide layers
    • H01L21/32053—Deposition of metallic or metal-silicide layers of metal-silicide layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/32055—Deposition of semiconductive layers, e.g. poly - or amorphous silicon layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

본 발명은 반도체 소자의 제조방법을 제공하는 것으로, 폴리실리콘층상에 자연적으로 형성되는 자연산화막을 완전히 제거한 후 텅스텐 실리사이드층을 형성하고, 산화공정 및 열처리공정을 높은온도에서 실시하므로써 폴리실리콘층 및 텅스텐 실리사이드츠에 발생하는 들뜸현상을 억제하여 소자의 신뢰성 및 수율을 향상시킬 수 있는 효과가 있다.

Description

반도체 소자의 제조방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제2a내지 2d 도는 본 발명에 따른 종래 반도체 소자의 제조방법을 설명하기 위한 소자의 단면도이다.

Claims (4)

  1. 반도체 소자의 제조방법에 있어서, 실리콘기판상에 게이트 산화막 및 패터닝된 폴리실리콘층을 형성하는 단계와, 상기 단계로부터 H2O2/NH4+ HNO3+ HF 증기를 이용하여 상기 폴리실리콘층상에 자연적으로 형성된 자연산화막을 제거하는 단계와, 상기단계로부터 상기 폴리실리콘층상에 텅스텐 실리사이드층을 형성한 후 LDD 접합영역을 형성하는 단계와,상기 단계로부터 상기 폴리실리콘층 및 텅스텐 실리사이드층의 측벽에 산화막 스페이서를 형성한 후 고농도불순물 이온을 주입하여 LDD구조를 갖는 접합영역을 형성하는 단계와, 상기 단계로부터 산화공정을 실시하여 상기 실리콘기판의 전체상부면에 산화막을 형성한 후 열처리공정을 실시하는 단계로 이루어지는 것을 특징으로 하는 반도체 소자의 제조방법.
  2. 제 1 항에 있어서, 상기 H2O2/NH4액의 온도는 75 내지 85℃인 것을 특징으로 하는 반도체 소자의 제조방법.
  3. 제 1 항에 있어서, 상기 산화공정은 950 내지 1000℃의 온도조건에서 20 내지 30분간 실시되는 것을 특징으로 하는 반도체 소자의 제조방법.
  4. 제 1 항에 있어서, 상기 열처리공정은 N2가스 분위기 및 950 내지 1050℃의 온도조건에서 20 내지 30분간 실시되는 것을 특징으로 하는 반도체 소자의 제조방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019960022832A 1996-06-21 1996-06-21 반도체 소자의 제조방법 KR100246777B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019960022832A KR100246777B1 (ko) 1996-06-21 1996-06-21 반도체 소자의 제조방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019960022832A KR100246777B1 (ko) 1996-06-21 1996-06-21 반도체 소자의 제조방법

Publications (2)

Publication Number Publication Date
KR980005359A true KR980005359A (ko) 1998-03-30
KR100246777B1 KR100246777B1 (ko) 2000-03-15

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KR1019960022832A KR100246777B1 (ko) 1996-06-21 1996-06-21 반도체 소자의 제조방법

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100593740B1 (ko) * 2004-09-16 2006-06-28 삼성전자주식회사 반도체 자연산화막 제거방법

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR950021272A (ko) * 1993-12-30 1995-07-26 김주용 반도체 소자의 트랜지스터 제조방법
KR0147417B1 (ko) * 1994-06-15 1998-08-01 김주용 반도체 소자의 식각 피해영역 제거방법

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100593740B1 (ko) * 2004-09-16 2006-06-28 삼성전자주식회사 반도체 자연산화막 제거방법

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