KR980005260A - Fabrication method of field emission device with double gate structure - Google Patents

Fabrication method of field emission device with double gate structure Download PDF

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Publication number
KR980005260A
KR980005260A KR1019960025348A KR19960025348A KR980005260A KR 980005260 A KR980005260 A KR 980005260A KR 1019960025348 A KR1019960025348 A KR 1019960025348A KR 19960025348 A KR19960025348 A KR 19960025348A KR 980005260 A KR980005260 A KR 980005260A
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KR
South Korea
Prior art keywords
field emission
emission device
gate structure
double gate
present
Prior art date
Application number
KR1019960025348A
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Korean (ko)
Inventor
권기진
Original Assignee
엄길용
오리온전기 주식회사
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Publication date
Application filed by 엄길용, 오리온전기 주식회사 filed Critical 엄길용
Priority to KR1019960025348A priority Critical patent/KR980005260A/en
Publication of KR980005260A publication Critical patent/KR980005260A/en

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Abstract

본 발명은 이중게이트(double - gate)구조의 실리콘 전계방출소자의 제작방법에 관한 것이다. 본 발명의 특징은, 비등방성에칭 또는 등방/비등방 이단계 에칭과 샤프닝(sharpening)산화를 통하여 팁(1)을 형성한다. 그리고 제4도에 도시한 바와같이, 산화막(6), 금속층인 하부게이트(2), 산화막(3), 상부게이트(4) 충돌을 차례로 형성시킨다. 그리고 에치백 (Etch - Back) 공정을 이용하여 포커싱 전극을 가진 필드이미션 어레이 (FEA : tield emission array)를 제작 완성한다. 본 발명에 의하면 더욱 양질의 전계방출 소자를 더욱 용이한 공정으로 대량제작 가능한 효과가 있다.The present invention relates to a method of manufacturing a silicon field emission device having a double - gate structure. A feature of the present invention is that the tip 1 is formed through anisotropic etching or isotropic / anisotropic two-step etching and sharpening oxidation. As shown in FIG. 4, the oxide film 6, the bottom gate 2, the metal layer, the oxide film 3, and the collision of the top gate 4 are formed in this order. Then, a field emission array (FEA) with a focusing electrode is manufactured and completed by using an etch - back process. According to the present invention, there is an effect that a field emission device of a better quality can be mass-produced in a more facilitated process.

Description

이중게이트 구조의 전계방출소자 제작방법Fabrication method of field emission device with double gate structure

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is a trivial issue, I did not include the contents of the text.

제3~5도는 본 발명에 따른 제조공정을 보여주는 도면.FIGS. 3 to 5 show a manufacturing process according to the present invention.

Claims (1)

이중게이트 구조의 전계방출소자의 제작방법에 있어서, 비등방성 또는 등방/비등방 이단계 에칭 공정과 샤프닝 산화를 통하여 팁(1)을 형성하는 단계와, 산화막(6), 하부게이트(2), 산화막(3), 상부게이트(4)층을 순차 형성시키는 단계와, 에치백 공정으로 이미터를 형성시키는 단계로 이루어지는 것을 특징으로 하는 이중게이트 구조의 전계방출소자 제작방법.A method of manufacturing a field emission device having a double gate structure, the method comprising: forming a tip (1) through an anisotropic or isotropic / isotropic two-step etching process and sharpening oxidation; (3), and an upper gate (4) layer in sequence, and forming an emitter in an etch-back process. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: It is disclosed by the contents of the first application.
KR1019960025348A 1996-06-28 1996-06-28 Fabrication method of field emission device with double gate structure KR980005260A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019960025348A KR980005260A (en) 1996-06-28 1996-06-28 Fabrication method of field emission device with double gate structure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019960025348A KR980005260A (en) 1996-06-28 1996-06-28 Fabrication method of field emission device with double gate structure

Publications (1)

Publication Number Publication Date
KR980005260A true KR980005260A (en) 1998-03-30

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KR1019960025348A KR980005260A (en) 1996-06-28 1996-06-28 Fabrication method of field emission device with double gate structure

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100284586B1 (en) * 1998-06-23 2001-05-02 정선종 Method for manufacturing gate electrode of field emission device with silicon tip

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100284586B1 (en) * 1998-06-23 2001-05-02 정선종 Method for manufacturing gate electrode of field emission device with silicon tip

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