KR970077390A - Semiconductor device using pads - Google Patents

Semiconductor device using pads Download PDF

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Publication number
KR970077390A
KR970077390A KR1019960016255A KR19960016255A KR970077390A KR 970077390 A KR970077390 A KR 970077390A KR 1019960016255 A KR1019960016255 A KR 1019960016255A KR 19960016255 A KR19960016255 A KR 19960016255A KR 970077390 A KR970077390 A KR 970077390A
Authority
KR
South Korea
Prior art keywords
semiconductor device
metal
pad
polysilicon wiring
pads
Prior art date
Application number
KR1019960016255A
Other languages
Korean (ko)
Inventor
강상석
김홍범
Original Assignee
김광호
삼성전자 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김광호, 삼성전자 주식회사 filed Critical 김광호
Priority to KR1019960016255A priority Critical patent/KR970077390A/en
Publication of KR970077390A publication Critical patent/KR970077390A/en

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Abstract

패드를 이용한 반도체 장치가 개시되어 있다. 패드의 하부에 트랜지스터, 다이오드, 저항 및 접합 등의 단위 소자들로 구성된 반도체 회로들이 형성된다. 패드 하부의 면적을 이용하여 단위 소자들을 효과적으로 레이아웃 함으로써, 칩의 면적을 줄이거나 같은 면적에서 더욱 다양한 기능을 추가할 수 있다.A semiconductor device using a pad is disclosed. Semiconductor circuits composed of unit elements such as transistors, diodes, resistors, and junctions are formed under the pads. By effectively laying out the unit elements using the area under the pad, it is possible to reduce the area of the chip or to add more various functions in the same area.

Description

패드를 이용한 반도체 장치Semiconductor device using pads

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is a trivial issue, I did not include the contents of the text.

제2도는 본 발명의 바람직한 실시예에 의한, 패드 하부에 회로를 형성한 반도체 장치의 수직 단면도.FIG. 2 is a vertical sectional view of a semiconductor device in which a circuit is formed under a pad according to a preferred embodiment of the present invention; FIG.

Claims (4)

패드의 하부에 적어도 하나의 반도체 회로가 형성되어 있는 것을 특징으로 하는 반도체 장치.Wherein at least one semiconductor circuit is formed under the pad. 제1항에 있어서, 상기 적어도 하나의 반도체 회로는 전원공급을 위한 금속 또는 폴리실리콘 배선, 신호공급을 위한 금속 또는 폴리실리콘 배선, 접합(junction), 다이오드, 트랜지스터 또는 저항으로 이루어진 것을 특징으로 하는 반도체 장치.The semiconductor device of claim 1, wherein the at least one semiconductor circuit comprises a metal or polysilicon wiring for power supply, a metal or polysilicon wiring for signal supply, a junction, a diode, a transistor or a resistor. Device. 소자분리막에 의해 활성영역이 정의된 반도체기판의 상기 활성영역 상에 형성된 적어도 하나의 단위 소자; 상기 적어도 하나의 단위 소자 상에 형성된 절연층; 및 상기 절연층 상에 형성된 패드를 구비하는 것을 특징으로 하는 반도체 장치.At least one unit element formed on the active region of the semiconductor substrate in which the active region is defined by the element isolation film; An insulating layer formed on the at least one unit element; And a pad formed on the insulating layer. 제3항에 있어서, 상기 적어도 하나의 단위 소자는 전원공급을 위한 금속 또는 폴리실리콘 배선, 신호공급을 위한 금속 또는 폴리실리콘 배선, 접합(junction), 다이오드, 트랜지스터 또는 저항으로 이루어진 것을 특징으로 하는 반도체 장치.4. The semiconductor device according to claim 3, wherein the at least one unit element comprises a metal or polysilicon wiring for power supply, a metal or polysilicon wiring for signal supply, a junction, a diode, a transistor or a resistor. Device. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: It is disclosed by the contents of the first application.
KR1019960016255A 1996-05-15 1996-05-15 Semiconductor device using pads KR970077390A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019960016255A KR970077390A (en) 1996-05-15 1996-05-15 Semiconductor device using pads

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019960016255A KR970077390A (en) 1996-05-15 1996-05-15 Semiconductor device using pads

Publications (1)

Publication Number Publication Date
KR970077390A true KR970077390A (en) 1997-12-12

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019960016255A KR970077390A (en) 1996-05-15 1996-05-15 Semiconductor device using pads

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KR (1) KR970077390A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100419813B1 (en) * 2000-10-16 2004-02-21 샤프 가부시키가이샤 Semiconductor device and manufacturing method thereof
KR100631917B1 (en) * 2000-08-08 2006-10-04 삼성전자주식회사 Layout structure of pad-peripheral circuit in semiconductor device
KR100746446B1 (en) * 2005-07-19 2007-08-03 세이코 엡슨 가부시키가이샤 Semiconductor device
KR100813361B1 (en) * 2005-07-06 2008-03-12 세이코 엡슨 가부시키가이샤 Semiconductor device
US7598569B2 (en) 2005-06-23 2009-10-06 Seiko Epson Corporation Semiconductor device
US7649260B2 (en) 2005-07-06 2010-01-19 Seiko Epson Corporation Semiconductor device
US8878365B2 (en) 2005-07-13 2014-11-04 Seiko Epson Corporation Semiconductor device having a conductive layer reliably formed under an electrode pad

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100631917B1 (en) * 2000-08-08 2006-10-04 삼성전자주식회사 Layout structure of pad-peripheral circuit in semiconductor device
KR100419813B1 (en) * 2000-10-16 2004-02-21 샤프 가부시키가이샤 Semiconductor device and manufacturing method thereof
US7598569B2 (en) 2005-06-23 2009-10-06 Seiko Epson Corporation Semiconductor device
KR100813361B1 (en) * 2005-07-06 2008-03-12 세이코 엡슨 가부시키가이샤 Semiconductor device
US7649260B2 (en) 2005-07-06 2010-01-19 Seiko Epson Corporation Semiconductor device
US7777334B2 (en) 2005-07-06 2010-08-17 Seiko Epson Corporation Semiconductor device having active element formation region provided under a bump pad
US8878365B2 (en) 2005-07-13 2014-11-04 Seiko Epson Corporation Semiconductor device having a conductive layer reliably formed under an electrode pad
KR100746446B1 (en) * 2005-07-19 2007-08-03 세이코 엡슨 가부시키가이샤 Semiconductor device
US7936064B2 (en) 2005-07-19 2011-05-03 Seiko Epson Corporation Semiconductor device
US8441125B2 (en) 2005-07-19 2013-05-14 Seiko Epson Corporation Semiconductor device

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