KR970077390A - Semiconductor device using pads - Google Patents
Semiconductor device using pads Download PDFInfo
- Publication number
- KR970077390A KR970077390A KR1019960016255A KR19960016255A KR970077390A KR 970077390 A KR970077390 A KR 970077390A KR 1019960016255 A KR1019960016255 A KR 1019960016255A KR 19960016255 A KR19960016255 A KR 19960016255A KR 970077390 A KR970077390 A KR 970077390A
- Authority
- KR
- South Korea
- Prior art keywords
- semiconductor device
- metal
- pad
- polysilicon wiring
- pads
- Prior art date
Links
Abstract
패드를 이용한 반도체 장치가 개시되어 있다. 패드의 하부에 트랜지스터, 다이오드, 저항 및 접합 등의 단위 소자들로 구성된 반도체 회로들이 형성된다. 패드 하부의 면적을 이용하여 단위 소자들을 효과적으로 레이아웃 함으로써, 칩의 면적을 줄이거나 같은 면적에서 더욱 다양한 기능을 추가할 수 있다.A semiconductor device using a pad is disclosed. Semiconductor circuits composed of unit elements such as transistors, diodes, resistors, and junctions are formed under the pads. By effectively laying out the unit elements using the area under the pad, it is possible to reduce the area of the chip or to add more various functions in the same area.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is a trivial issue, I did not include the contents of the text.
제2도는 본 발명의 바람직한 실시예에 의한, 패드 하부에 회로를 형성한 반도체 장치의 수직 단면도.FIG. 2 is a vertical sectional view of a semiconductor device in which a circuit is formed under a pad according to a preferred embodiment of the present invention; FIG.
Claims (4)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019960016255A KR970077390A (en) | 1996-05-15 | 1996-05-15 | Semiconductor device using pads |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019960016255A KR970077390A (en) | 1996-05-15 | 1996-05-15 | Semiconductor device using pads |
Publications (1)
Publication Number | Publication Date |
---|---|
KR970077390A true KR970077390A (en) | 1997-12-12 |
Family
ID=66220065
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019960016255A KR970077390A (en) | 1996-05-15 | 1996-05-15 | Semiconductor device using pads |
Country Status (1)
Country | Link |
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KR (1) | KR970077390A (en) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100419813B1 (en) * | 2000-10-16 | 2004-02-21 | 샤프 가부시키가이샤 | Semiconductor device and manufacturing method thereof |
KR100631917B1 (en) * | 2000-08-08 | 2006-10-04 | 삼성전자주식회사 | Layout structure of pad-peripheral circuit in semiconductor device |
KR100746446B1 (en) * | 2005-07-19 | 2007-08-03 | 세이코 엡슨 가부시키가이샤 | Semiconductor device |
KR100813361B1 (en) * | 2005-07-06 | 2008-03-12 | 세이코 엡슨 가부시키가이샤 | Semiconductor device |
US7598569B2 (en) | 2005-06-23 | 2009-10-06 | Seiko Epson Corporation | Semiconductor device |
US7649260B2 (en) | 2005-07-06 | 2010-01-19 | Seiko Epson Corporation | Semiconductor device |
US8878365B2 (en) | 2005-07-13 | 2014-11-04 | Seiko Epson Corporation | Semiconductor device having a conductive layer reliably formed under an electrode pad |
-
1996
- 1996-05-15 KR KR1019960016255A patent/KR970077390A/en not_active Application Discontinuation
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100631917B1 (en) * | 2000-08-08 | 2006-10-04 | 삼성전자주식회사 | Layout structure of pad-peripheral circuit in semiconductor device |
KR100419813B1 (en) * | 2000-10-16 | 2004-02-21 | 샤프 가부시키가이샤 | Semiconductor device and manufacturing method thereof |
US7598569B2 (en) | 2005-06-23 | 2009-10-06 | Seiko Epson Corporation | Semiconductor device |
KR100813361B1 (en) * | 2005-07-06 | 2008-03-12 | 세이코 엡슨 가부시키가이샤 | Semiconductor device |
US7649260B2 (en) | 2005-07-06 | 2010-01-19 | Seiko Epson Corporation | Semiconductor device |
US7777334B2 (en) | 2005-07-06 | 2010-08-17 | Seiko Epson Corporation | Semiconductor device having active element formation region provided under a bump pad |
US8878365B2 (en) | 2005-07-13 | 2014-11-04 | Seiko Epson Corporation | Semiconductor device having a conductive layer reliably formed under an electrode pad |
KR100746446B1 (en) * | 2005-07-19 | 2007-08-03 | 세이코 엡슨 가부시키가이샤 | Semiconductor device |
US7936064B2 (en) | 2005-07-19 | 2011-05-03 | Seiko Epson Corporation | Semiconductor device |
US8441125B2 (en) | 2005-07-19 | 2013-05-14 | Seiko Epson Corporation | Semiconductor device |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
WITB | Written withdrawal of application |