KR970077285A - 동시방전화장치 - Google Patents

동시방전화장치 Download PDF

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Publication number
KR970077285A
KR970077285A KR1019970017684A KR19970017684A KR970077285A KR 970077285 A KR970077285 A KR 970077285A KR 1019970017684 A KR1019970017684 A KR 1019970017684A KR 19970017684 A KR19970017684 A KR 19970017684A KR 970077285 A KR970077285 A KR 970077285A
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KR
South Korea
Prior art keywords
power supply
side conductor
telephone apparatus
chambers
simultaneous telephone
Prior art date
Application number
KR1019970017684A
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English (en)
Other versions
KR100294028B1 (ko
Inventor
가즈토 오부치
Original Assignee
나카네 히사시
도쿄 오카 코교 가부시키가이샤
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Publication date
Application filed by 나카네 히사시, 도쿄 오카 코교 가부시키가이샤 filed Critical 나카네 히사시
Publication of KR970077285A publication Critical patent/KR970077285A/ko
Application granted granted Critical
Publication of KR100294028B1 publication Critical patent/KR100294028B1/ko

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)
  • Telephone Set Structure (AREA)

Abstract

1개의 고주파 전원(P)으로 2개의 체임버(4, 14)를 동시에 방전시키는 동시방전화장치에 있어서, 2개의 체임버(4, 14)에 전력분할수단(20)을 통하여 고주파 전원(P)을 접속하고, 전력분할수단(20)은, 2개의 체임버(4, 14)의 대응하는 전극 끼리를 접속하는 전극측 도체판(21)과, 고주파 전원(P)의 Rf 케이블(22)의 단부에 접속하는 전원측 도체판(23)과, 전극측 도체판(21)과 전원측 도체판(23)을 임의의 위치에서 전기적으로 접속하는 도체 바아(bar)(24)로 구성된다.

Description

동시방전화장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명에 따른 동시방전화장치의 단면도.

Claims (5)

1개의 고주파전원으로 2개의 체임버내를 동시에 방전시키는 동시방전화장치에 있어서, 상기 2개의 체임버에 전력분할수단을 통하여 상기 고주파 전원을 접속한 것을 특징으로 하는 동시방전화장치.
제1항에 있어서, 상기 전력분할수단은, 상기 2개의 체임버의 대응하는 전극끼리를 접속하는 전극측 도체판과, 상기 고주파 전원의 출력 케이블의 단부에 접속하는 전원측 도체판과, 상기 전극측 도체판과 전원측 도체판을 임의의 위치에서 접속하는 도체 바아로 구성되는 것을 특징으로 하는 동시방전화장치.
제2항에 있어서, 상기 도체 바아의 양쪽 끝에는, 동일 방향으로 돌출한 볼록부를 형성하고, 상기 전극측도체판과 전원측 도체판에는, 상기 도체 바아의 볼록부를 끼워 접속하는 접속구멍을 형성하고 있는 것을 특징으로 하는 동시방전화장치.
제3항에 있어서, 상기 접속구멍은, 둥근 구멍인 것을 특징으로 하는 동시방전화장치.
제3항에 있어서, 상기 접속구멍은, 전극측 구리판과 전원측 구리판의 길이방향으로 형성한 긴 구멍인 것을 특징으로 하는 동시방전화장치.
※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019970017684A 1996-05-14 1997-05-08 동시방전화장치 KR100294028B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP8-118681 1996-05-14
JP11868196A JP3279919B2 (ja) 1996-05-14 1996-05-14 同時放電化装置

Publications (2)

Publication Number Publication Date
KR970077285A true KR970077285A (ko) 1997-12-12
KR100294028B1 KR100294028B1 (ko) 2001-10-24

Family

ID=14742574

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019970017684A KR100294028B1 (ko) 1996-05-14 1997-05-08 동시방전화장치

Country Status (4)

Country Link
US (1) US5922134A (ko)
JP (1) JP3279919B2 (ko)
KR (1) KR100294028B1 (ko)
TW (1) TW464969B (ko)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002030447A (ja) * 2000-07-11 2002-01-31 Canon Inc プラズマ処理方法及びプラズマ処理装置
JP3868217B2 (ja) * 2001-02-09 2007-01-17 東京応化工業株式会社 プラズマ処理装置
JP2004014904A (ja) * 2002-06-10 2004-01-15 Tokyo Ohka Kogyo Co Ltd 同時放電化装置
JPWO2006118161A1 (ja) * 2005-04-28 2008-12-18 株式会社日立国際電気 基板処理装置および電極部材
JP2007220594A (ja) * 2006-02-20 2007-08-30 Nissin Electric Co Ltd プラズマ生成方法及びプラズマ生成装置並びにプラズマ処理装置
JP5257917B2 (ja) * 2006-04-24 2013-08-07 株式会社ニューパワープラズマ 多重マグネチックコアが結合された誘導結合プラズマ反応器
JP5191159B2 (ja) * 2007-04-04 2013-04-24 ルネサスエレクトロニクス株式会社 半導体製造装置及び半導体装置の製造方法
US7699935B2 (en) 2008-06-19 2010-04-20 Applied Materials, Inc. Method and system for supplying a cleaning gas into a process chamber

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2635021B2 (ja) * 1985-09-26 1997-07-30 宣夫 御子柴 堆積膜形成法及びこれに用いる装置
JPH0638405B2 (ja) * 1986-11-19 1994-05-18 東京応化工業株式会社 プラズマ反応処理装置
WO2004083486A1 (ja) * 1993-03-23 2004-09-30 Atsushi Yamagami 超短波を用いたプラズマcvd法及び該プラズマcvd装置
JP3236111B2 (ja) * 1993-03-31 2001-12-10 キヤノン株式会社 プラズマ処理装置及び処理方法
DE4413655A1 (de) * 1994-04-20 1995-10-26 Leybold Ag Beschichtungsanlage
DE4441206C2 (de) * 1994-11-19 1996-09-26 Leybold Ag Einrichtung für die Unterdrückung von Überschlägen in Kathoden-Zerstäubungseinrichtungen
DE69509046T2 (de) * 1994-11-30 1999-10-21 Applied Materials Inc Plasmareaktoren zur Behandlung von Halbleiterscheiben

Also Published As

Publication number Publication date
JP3279919B2 (ja) 2002-04-30
KR100294028B1 (ko) 2001-10-24
JPH09306694A (ja) 1997-11-28
US5922134A (en) 1999-07-13
TW464969B (en) 2001-11-21

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