KR970071119A - A mask pattern of a semiconductor device - Google Patents
A mask pattern of a semiconductor device Download PDFInfo
- Publication number
- KR970071119A KR970071119A KR1019960009695A KR19960009695A KR970071119A KR 970071119 A KR970071119 A KR 970071119A KR 1019960009695 A KR1019960009695 A KR 1019960009695A KR 19960009695 A KR19960009695 A KR 19960009695A KR 970071119 A KR970071119 A KR 970071119A
- Authority
- KR
- South Korea
- Prior art keywords
- semiconductor device
- pattern
- mask pattern
- storage node
- increasing
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/03—Making the capacitor or connections thereto
- H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
- H10B12/0335—Making a connection between the transistor and the capacitor, e.g. plug
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
간단한 마스크의 구조 변경을 통하여 스토리지 노드의 유효 면적을 증가시킬 수 있는 반도체 장치의 마스트 패턴이 개시되어 있다.A mast pattern of a semiconductor device capable of increasing the effective area of a storage node through structural modification of a simple mask is disclosed.
본 발명은 반도체 장치의 스토리지 노드 패턴을 형성하기 위한 직사각형 형상의 마스크 패턴에 있어서, 상기 마스크 패턴의 일측에 스토리지 노드의 표면적 증가를 위한 더미 패턴(dummy pattern)을 삽입한 것을 특징으로 한다.A rectangular mask pattern for forming a storage node pattern of a semiconductor device is characterized in that a dummy pattern for increasing the surface area of the storage node is inserted into one side of the mask pattern.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is a trivial issue, I did not include the contents of the text.
제3도는 본 발명에 의한 마스크 패턴을 설명하기 위한 도면.FIG. 3 is a view for explaining a mask pattern according to the present invention; FIG.
Claims (1)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019960009695A KR970071119A (en) | 1996-04-01 | 1996-04-01 | A mask pattern of a semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019960009695A KR970071119A (en) | 1996-04-01 | 1996-04-01 | A mask pattern of a semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
KR970071119A true KR970071119A (en) | 1997-11-07 |
Family
ID=66222671
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019960009695A KR970071119A (en) | 1996-04-01 | 1996-04-01 | A mask pattern of a semiconductor device |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR970071119A (en) |
-
1996
- 1996-04-01 KR KR1019960009695A patent/KR970071119A/en not_active Application Discontinuation
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
WITN | Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid |