KR970071119A - A mask pattern of a semiconductor device - Google Patents

A mask pattern of a semiconductor device Download PDF

Info

Publication number
KR970071119A
KR970071119A KR1019960009695A KR19960009695A KR970071119A KR 970071119 A KR970071119 A KR 970071119A KR 1019960009695 A KR1019960009695 A KR 1019960009695A KR 19960009695 A KR19960009695 A KR 19960009695A KR 970071119 A KR970071119 A KR 970071119A
Authority
KR
South Korea
Prior art keywords
semiconductor device
pattern
mask pattern
storage node
increasing
Prior art date
Application number
KR1019960009695A
Other languages
Korean (ko)
Inventor
유영훈
이동선
Original Assignee
김광호
삼성전자 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김광호, 삼성전자 주식회사 filed Critical 김광호
Priority to KR1019960009695A priority Critical patent/KR970071119A/en
Publication of KR970071119A publication Critical patent/KR970071119A/en

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/50Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10BELECTRONIC MEMORY DEVICES
    • H10B12/00Dynamic random access memory [DRAM] devices
    • H10B12/01Manufacture or treatment
    • H10B12/02Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03Making the capacitor or connections thereto
    • H10B12/033Making the capacitor or connections thereto the capacitor extending over the transistor
    • H10B12/0335Making a connection between the transistor and the capacitor, e.g. plug

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

간단한 마스크의 구조 변경을 통하여 스토리지 노드의 유효 면적을 증가시킬 수 있는 반도체 장치의 마스트 패턴이 개시되어 있다.A mast pattern of a semiconductor device capable of increasing the effective area of a storage node through structural modification of a simple mask is disclosed.

본 발명은 반도체 장치의 스토리지 노드 패턴을 형성하기 위한 직사각형 형상의 마스크 패턴에 있어서, 상기 마스크 패턴의 일측에 스토리지 노드의 표면적 증가를 위한 더미 패턴(dummy pattern)을 삽입한 것을 특징으로 한다.A rectangular mask pattern for forming a storage node pattern of a semiconductor device is characterized in that a dummy pattern for increasing the surface area of the storage node is inserted into one side of the mask pattern.

Description

반도체 장치의 마스크 패턴A mask pattern of a semiconductor device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is a trivial issue, I did not include the contents of the text.

제3도는 본 발명에 의한 마스크 패턴을 설명하기 위한 도면.FIG. 3 is a view for explaining a mask pattern according to the present invention; FIG.

Claims (1)

반도체 장치의 스토리지 노드 패턴을 형성하기 위한 직사각형 형상의 마스크 패턴에 있어서, 상기 마스크패턴의 일측에 스토리지 노드의 표면적 증가를 위한 더미 패턴(dummy pattern)을 삽입한 것을 특징으로 하는반도체 장치의 마스크 패턴.A mask pattern of a rectangular shape for forming a storage node pattern of a semiconductor device, wherein a dummy pattern for increasing the surface area of the storage node is inserted into one side of the mask pattern. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: It is disclosed by the contents of the first application.
KR1019960009695A 1996-04-01 1996-04-01 A mask pattern of a semiconductor device KR970071119A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019960009695A KR970071119A (en) 1996-04-01 1996-04-01 A mask pattern of a semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019960009695A KR970071119A (en) 1996-04-01 1996-04-01 A mask pattern of a semiconductor device

Publications (1)

Publication Number Publication Date
KR970071119A true KR970071119A (en) 1997-11-07

Family

ID=66222671

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019960009695A KR970071119A (en) 1996-04-01 1996-04-01 A mask pattern of a semiconductor device

Country Status (1)

Country Link
KR (1) KR970071119A (en)

Similar Documents

Publication Publication Date Title
DE69332857D1 (en) SEMICONDUCTOR DEVICE.
DE69120116D1 (en) Heterostructure semiconductor device
NO910964L (en) LINEAR VISCOOLASTIC, Aqueous, Liquid Detergent Mixtures.
FI955574A0 (en) Device for drying the web
DE69009448D1 (en) Semiconductor laser device.
IT1076042B (en) INTEGRALLY FOCUSED ILLUMINATOR, LOW OZONE DEVELOPMENT
DE69009626D1 (en) Masterslice semiconductor device.
DE69021151D1 (en) Semiconductor laser device.
ATE121147T1 (en) DYNAMIC PRESSURE WASHER.
KR970071119A (en) A mask pattern of a semiconductor device
NO900161D0 (en) ACCELERATING DEVICE.
DE69102092D1 (en) Semiconductor laser.
DE69024031D1 (en) High performance semiconductor device.
DE69022536D1 (en) Dry etching device.
DE69107704D1 (en) Dynamic semiconductor device.
FI905001A0 (en) KALANDER I PAPPERS- ELLER CARTON MASK.
KR970063691A (en) A new type of semiconductor package
KR970053325A (en) Wafer transfer device
KR970062805A (en) The active mask pattern of the semiconductor device
KR970071120A (en) Exposure Mask
DE68915151D1 (en) Semiconductor microscope.
NO910425D0 (en) SURFACE ACTIVE MIXTURES.
FI904699A0 (en) PAPER MASK, DAER PAPPERBANAN STOEDS MELLAN PRESS- OCK TORKSEKTIONERNA.
KR980003797A (en) Method for pattern formation of mask or reticle of semiconductor device
KR960026269A (en) Reticle pattern

Legal Events

Date Code Title Description
WITN Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid