KR970071094A - Structure of liquid crystal display element and method of manufacturing liquid crystal display element - Google Patents

Structure of liquid crystal display element and method of manufacturing liquid crystal display element Download PDF

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KR970071094A
KR970071094A KR1019960011585A KR19960011585A KR970071094A KR 970071094 A KR970071094 A KR 970071094A KR 1019960011585 A KR1019960011585 A KR 1019960011585A KR 19960011585 A KR19960011585 A KR 19960011585A KR 970071094 A KR970071094 A KR 970071094A
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South Korea
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electrode
pixel electrode
substrate
liquid crystal
forming
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KR1019960011585A
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Korean (ko)
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KR100223155B1 (en
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신우섭
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구자홍
Lg 전자주식회사
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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/133371—Cells with varying thickness of the liquid crystal layer
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
    • G02F2201/12—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode
    • G02F2201/123—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode pixel

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)

Abstract

본 발명의 액정표시소자의 화소전극은 각각의 한 화소 영역의 게이트 절연막 또는 보호막의 일부를 제거하여 화소전극을 구성하거나 게이트 절연막 위에 제1화소전극을 구성한 후 제1화소전극 위에 보호막을 중착하고 상기 보호막 위에 제1화소전극보다 작게 제2화소전극을 형성하여 공통전극과의 거리가 일부분이 다르게 구성되어 있기 때문에 한 화소내에서 액정의 문턱전압이 다른 부분이 있게 된다.The pixel electrode of the liquid crystal display of the present invention may be formed by forming a pixel electrode by removing a part of a gate insulating film or a protective film of each pixel region or by forming a first pixel electrode on a gate insulating film and then attaching a protective film on the first pixel electrode, Since the second pixel electrode is formed on the protective film smaller than the first pixel electrode so that a part of the second pixel electrode is different in distance from the common electrode, there is a portion where the threshold voltage of the liquid crystal differs in one pixel.

따라서 입력신호 값을 제어하면 한 화소내에서 액정이 반전하는 영역이 변화하여 액정의 다계조를 구현할 수 있고 한 화소 영역 내에서는 액정이 완전히 반전하거나 또는 완전히 발전하지 않거나 둘 중의 하나이기 때문에 입력전압을 용이하게 제어할 수 있고 액정의 상태가 안정적이어서 다계조의 재현성이 좋은 효과가 있다.Therefore, if the input signal value is controlled, the region in which the liquid crystal is inverted in one pixel can be changed to realize the multi-gradation of the liquid crystal. In the pixel region, the liquid crystal is completely inverted or not fully developed. The liquid crystal can be easily controlled and the state of the liquid crystal is stable, so that the reproducibility of multi-gradation is good.

Description

액정표시소자의 구조 및 액정표시소자의 제조방법Structure of liquid crystal display element and method of manufacturing liquid crystal display element

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is a trivial issue, I did not include the contents of the text.

제3도는 본 발명의 액정표시소자의 화소를 나타낸 평면도.FIG. 3 is a plan view showing a pixel of the liquid crystal display element of the present invention. FIG.

Claims (7)

기판에 게이트전극을 형성하는 공정과; 상기 게이트전극이 형성된 기판에 게이트 절연막을 중착하는 공정과; 상기 게이트전극부의 게이트 절연막에 반도체층과 오믹 접촉층과 소스·드레인전극층을 중착하고 패터닝 하여 TFT를 형성하는 공정과; 상기 TFT가 형성된 기판에 보호막을 중착하는 과정과; 화소전극이 형성되는 영역의 상기 보호막의 일부 및 상기 게이트 절연막의 일부를 제거하고 상기 보호막에 콘택홀을 형성하는 공정과; 상기 콘택홀이 형성된 절연막에 투명도전막을 중착하고 패터닝하여 화소전극을 단차지게 형성하는 공정을 포함하는 액정표시소자의 제조방법.Forming a gate electrode on a substrate; Depositing a gate insulating film on the substrate on which the gate electrode is formed; Forming a TFT on the gate insulating film of the gate electrode portion by patterning the semiconductor layer, the ohmic contact layer, and the source / drain electrode layer; A step of placing a protective film on a substrate on which the TFT is formed; Removing a part of the protective film and a part of the gate insulating film in a region where the pixel electrode is formed and forming a contact hole in the protective film; Forming a transparent conductive film on the insulating film on which the contact hole is formed, and patterning the transparent conductive film to form the pixel electrode so as to be stepped. 기판에 게이트전극을 형성하는 공정과; 상기 게이트전극이 형성된 기판에 게이트 절연막을 중착하는 공정과; 상기 게이트전극부의 게이트 절연막에 반도체층과 오믹 접촉층을 중착하고 패터닝하여 형성하는 공정과, 상기 게이트 절연막 위에 제1화소전극을 형성하는 공정과; 상기 제1화소전극이 형성된 기판에 소스·드레인전극을 형성하여 상기 제1화소전극이 상기 드레인전극에 접촉되도록 하는 공정과; 상기 소스·드레인전극이 형성된 기판에 보호막을 중착하고 상기 드레인전극부의 보호막에 콘택홀을 형성하는 공정과; 상기 보호막 위헤 상기 드레인전극과 상기 콘택홀을 통하여 연결되는 제2화소전극을 형성하는 공정을 포함하는 액정표시소자의제조방법.Forming a gate electrode on a substrate; Depositing a gate insulating film on the substrate on which the gate electrode is formed; A step of forming a semiconductor layer and an ohmic contact layer on the gate insulating film of the gate electrode part by patterning and attaching them, a step of forming a first pixel electrode on the gate insulating film, Forming a source / drain electrode on the substrate on which the first pixel electrode is formed so that the first pixel electrode is in contact with the drain electrode; Forming a protective film on the substrate on which the source and drain electrodes are formed and forming a contact hole in the protective film of the drain electrode; And forming a second pixel electrode connected to the drain electrode and the contact hole through the protective film. 제2항에 있어서, 상기 제2화소전극의 면적은 제1화소전극의 면적보다 작게 형성되는 액정표시소자의 제조방법.The method of claim 2, wherein the area of the second pixel electrode is smaller than the area of the first pixel electrode. 기판 위에 형성된 게이트전극과; 상기 게이트전극이 형성된 기판 위에 화소전극이 형성되는 영역의 일부 절연막이 제거되어 형성된 게이트절연막과; 상기 게이트전극부의 게이트절연막 위에 반도체층과 오믹접촉층과 소스·드레인전극으로 된 TFT와; 상기 TFT가 형성된 기판 위에 중착된 보호막과; 상기 드레인전극부의 보호막에 형성된 콘택홀과; 상기 보호막 위에 단차지게 형성된 화소전극을 포함하는 액정표시소자.A gate electrode formed on the substrate; A gate insulating layer formed on the substrate on which the gate electrode is formed, in which a part of the insulating film of the region where the pixel electrode is formed is removed; A TFT having a semiconductor layer, an ohmic contact layer, and a source / drain electrode on a gate insulating film of the gate electrode; A protective film deposited on the substrate on which the TFT is formed; A contact hole formed in a protective film of the drain electrode; And a pixel electrode stepped on the protective film. 제4항에 있어서, 상기 화소전극이 형성되는 영역은 상기 보호막의 일부분이 제거된 액정표시소자.The liquid crystal display of claim 4, wherein a portion of the passivation layer is removed in a region where the pixel electrode is formed. 기판 위에 형성된 게이트전극과; 상기 게이트전극이 형성된 기판에 중착된 게이트 절연막과; 상기 게이트전극부의 게이트 절연막 위에 반도체층과 오믹 접촉층과 소스·드레인전극으로 된 TFT와; 상기 TFT의 드레인 전극과 접촉되고 상기 게이트 절연막 위에 형성된 제1화소전극과; 상기 TFT와 제1화소전극이 형성된 기판위에 중착된 보호막과; 상기 드레인전극부의 보호막에 형성된 콘택홀과; 상기 드레인전극과 콘택홀을 통하여 접촉되며 상기 보호막 위에 형성된 제2화소전극을 포함하는 액정표시소자.A gate electrode formed on the substrate; A gate insulating layer deposited on the substrate on which the gate electrode is formed; A TFT having a semiconductor layer, an ohmic contact layer, and a source / drain electrode on a gate insulating film of the gate electrode; A first pixel electrode which is in contact with a drain electrode of the TFT and is formed on the gate insulating film; A protective film deposited on the substrate on which the TFT and the first pixel electrode are formed; A contact hole formed in a protective film of the drain electrode; And a second pixel electrode which is in contact with the drain electrode through the contact hole and is formed on the passivation layer. 제6항에 있어서, 상기 제2화소전극의 면적은 제1화소전극의 면적보다 작게 형성된 액정표시소자.The liquid crystal display of claim 6, wherein the area of the second pixel electrode is smaller than the area of the first pixel electrode. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: It is disclosed by the contents of the first application.
KR1019960011585A 1996-04-17 1996-04-17 Structure and manufacturing method of liquid crystal display elements KR100223155B1 (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100543033B1 (en) * 1998-07-06 2006-05-12 삼성전자주식회사 Manufacturing method of liquid crystal display device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100543033B1 (en) * 1998-07-06 2006-05-12 삼성전자주식회사 Manufacturing method of liquid crystal display device

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