KR970060379A - Exhaust system for film forming equipment - Google Patents

Exhaust system for film forming equipment Download PDF

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KR970060379A
KR970060379A KR1019970001902A KR19970001902A KR970060379A KR 970060379 A KR970060379 A KR 970060379A KR 1019970001902 A KR1019970001902 A KR 1019970001902A KR 19970001902 A KR19970001902 A KR 19970001902A KR 970060379 A KR970060379 A KR 970060379A
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exhaust
gas
organometallic compound
film forming
exhaust gas
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KR100352379B1 (en
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다카시 호리우치
센쇼 고바야시
마사히데 이토오
히사시 고미
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히가시 데츠로
도쿄 에레쿠토론 가부시끼가이샤
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D50/00—Combinations of methods or devices for separating particles from gases or vapours
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/905—Cleaning of reaction chamber
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/909—Controlled atmosphere

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  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Sampling And Sample Adjustment (AREA)

Abstract

본 발명의 배기 시스템은 유기금속 화합물의 기화가스를 이용하여 대상물에 성막(成膜)을 실시하는 성막처리 장치의 배기구에 접속된 배기관로와; 배기관로에 설치되어, 성막처리장치내의 가스를 배기 가스로써 배기관로를 통하여 압송하는 압송장치와; 압송장치에 설치되어, 유기금속 화합물의 열분해 온도보다 더 낮은 온도로 압송장치를 냉각함으로써 압송장치로 도입되는 배기가스중에 함유된 유기금속 화합물의 석출을 억제하는 냉각기구와; 압송장치보다 하류측의 배기관로의 부위에 설치되어, 배기관로를 통하여 도입되는 배기가스중에 함유된 유기금속 화합물을 제해(除害)하는 제해장치를 구비하고 있다.The exhaust system of the present invention comprises: an exhaust pipe path connected to an exhaust port of a film forming apparatus for forming a film on an object using vaporized gas of an organometallic compound; A pressure feeding device which is provided in the exhaust pipe passage and pumps gas in the film forming apparatus through the exhaust pipe passage as exhaust gas; A cooling mechanism provided in the pressure feeding device to suppress precipitation of the organometallic compound contained in the exhaust gas introduced into the pressure feeding device by cooling the pressure feeding device to a temperature lower than the thermal decomposition temperature of the organometallic compound; It is provided in the site | part of the exhaust pipe path of a downstream side rather than a pressure feeding apparatus, and the decontamination apparatus which removes the organometallic compound contained in the exhaust gas introduced through the exhaust pipe path is provided.

Description

성막처리장치용 배기 시스템Exhaust system for film forming equipment

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제1도는 본 발명의 일 실시예에 따른 배기 시스템이 설치된 성막처리장치를 개략적으로 도시하는 구성도.1 is a block diagram schematically showing a film forming apparatus equipped with an exhaust system according to an embodiment of the present invention.

Claims (18)

유기금속 하합물의 기화가스를 이용하여 대상물에 성막을 실시하는 성막처리 장치의 배기구에 접속된 배기관로와; 상기 배기관로에 설치되어, 성막처리장치내의 가스를 배기가스로써 배기관로를 통하여 압송하는 압송수단과; 상기 압송수단에 설치되어, 유기금속 화합물의 열분해 온도보다 낮은 온도로 압송수단을 냉각함으로써, 압송수단으로 도입되는 배기가스중에 함유되는 유기금속 화합물의 석출을 억제하는 냉각수단과; 상기 압송수단보다 하류측의 배기관로의 부위에 설치되어, 배기관로를 통하여 도입되는 배기가스중에 포함되는 유기금속 화합물을 제해하는 제해수단을 구비하는 것을 특징으로 하는 성막처리장치용 배기 시스템.An exhaust pipe path connected to an exhaust port of the film forming apparatus for forming a film on the object by using the vaporized gas of the organic metal compound; Pressure feeding means installed in the exhaust pipe passage and for feeding gas in the film forming apparatus through the exhaust pipe passage as exhaust gas; Cooling means provided in the feeding means and cooling the feeding means at a temperature lower than the thermal decomposition temperature of the organometallic compound, thereby suppressing precipitation of the organometallic compound contained in the exhaust gas introduced into the feeding means; And a decontamination means provided at a portion of the exhaust pipe passage downstream from the pressure feeding means to remove the organometallic compound contained in the exhaust gas introduced through the exhaust pipe passage. 제1항에 있어서, 상기 제해수단은 배기가스중의 유기금속 화합물을 연소시켜서 제해하는 것을 특징으로 하는 성막처리장치용 배기 시스템.The exhaust system for a film forming apparatus according to claim 1, wherein said removing means burns and removes organometallic compounds in exhaust gas. 제2항에 있어서, 상기 제해수단은, 배기관로를 통하여 배기가스가 도입되는 하우징과, 하우징 내로 건조 공기를 공급하는 건조공기 공급수단과, 하우징내에 설치된 세라믹 히터판으로 이루어지고, 세라믹 히터판으로부터의 방사열과 건조공기에 의해 하우징내로 도입된 배기가스중의 유기금속 화합물을 연소시켜서 제해하는 것을 특징으로 하는 성막처리장치용 배기 시스템.The method according to claim 2, wherein the removing means comprises a housing into which exhaust gas is introduced through the exhaust pipe passage, dry air supply means for supplying dry air into the housing, and a ceramic heater plate provided in the housing. And exhausting and removing organometallic compounds in the exhaust gas introduced into the housing by radiant heat and dry air. 제1항에 있어서, 상기 제해수단은, 배기가스중의 유기금속 화합물을 화학적으로 반응시켜서 제해하는 것을 특징으로 하는 성막처리장치용 배기 시스템.The exhaust system according to claim 1, wherein the removing means chemically reacts and removes the organometallic compound in the exhaust gas. 제1항에 있어서, 상기 압송수단은, 한쌍의 회전자가 서로 접촉하여 회전하는 것에 의하여 배기가스를 압송하는 루츠식의 진공펌프인 것을 특징으로 하는 성막처리장치용 배기 시스템.The exhaust system for a film forming apparatus according to claim 1, wherein the pressure feeding means is a Roots-type vacuum pump that pumps the exhaust gas by rotating a pair of rotors in contact with each other. 제5항에 있어서, 상기 냉각수단은 상기 압송수단의 상류측으로부터 하류측으로 연장된 냉각관로로 이루어지고, 배기가스의 압축률이 높은 상기 압송수단의 하류측으로부터 냉각관로내로 냉매가 흐르는 것을 특징으로 하는 성막처리장치용 배기 시스템.6. The cooling means according to claim 5, wherein the cooling means comprises a cooling conduit extending from an upstream side to a downstream side of the conveying means, and a coolant flows into the cooling conduit from a downstream side of the conveying means having a high compression ratio of exhaust gas. Exhaust system for film forming equipment. 제1항에 있어서, 상기 제해수단보다 하류측의 배기관로의 부위에 설치되어, 배기가스에 수분을 접촉시키는 것에 의하여 배기가스중의 함유물을 제거하는 물 스크러버를 구비하는 것을 특징으로 하는 성막처리장치용 배기 시스템.2. The film forming process according to claim 1, further comprising: a water scrubber provided at a portion of the exhaust pipe downstream from the removing means and removing moisture in the exhaust gas by contacting the exhaust gas with moisture. Exhaust system for the device. 제1항에 있어서, 상기 유기금속 화합물은, DMAH(디메틸알루미늄하이드라이드), TIBA(트리이소부틸알루미늄), DMEAA(디메틸에틸아미노알란), TMEAA(트리메틸아미노알란), TMA(트리메틸알루미늄), TMG(트리메틸갈륨), 트리알킬포스핀으로 구성된 그룹중 어느 하나인 것을 특징으로 하는 성막처리장치용 배기 시스템.The organometallic compound according to claim 1, wherein the organometallic compound is DMAH (dimethylaluminum hydride), TIBA (triisobutylaluminum), DMEAA (dimethylethylaminoalan), TMEAA (trimethylaminoalan), TMA (trimethylaluminum), or TMG. (Trimethylgallium), and an exhaust system for a film forming apparatus, characterized in that any one of a group consisting of trialkylphosphine. 유기금속 화합물의 기화가스를 이용하여 대상물에 성막을 실시하는 성막처리장치의 배기구에 접속된 배기관로와; 상기 배기관로에 설치되어, 성막처리장치내의 가스를 흡인하여 배기관로를 통하여 압송하는 제1의 압송수단과; 상기 제1의 압송수단보다 하류측의 배기관로의 부위에 설치되어, 제1의 압송수단으로부터 배기된 배기가스를 배기관로를 통하여 압송하는 제2의 압송수단과; 상기 제1의 압송수단에 불활성가스를 공급하여, 이 불활성가스의 공급압력에 의해, 유기금속 화합물의 열분해 온도 이상인 제1의 압송수단의 부위에 성막처리장치로부터의 흡인가스가 침입하는 것을 규제하는 불활성가스 공급수단과; 상기 제2의 압송수단에 설치되어, 유기금속 화합물의 열분해 온도보다 낮은 온도로 제2의 압송수단을 냉각함으로써, 압송수단으로 도입되는 배기가스중에 함유되는 유기금속 화합물의 석출을 억제하는 냉각수단과; 상기 제2의 압송수단보다 하류측의 배기관로의 부위에 설치되어, 배기관로를 통하여 도입되는 배기가스중에 포함되는 유기금속 화합물을 제해하는 제해수단을 구비하는 것을 특징으로 하는 성막처리장치용 배기 시스템.An exhaust pipe path connected to an exhaust port of a film forming apparatus for forming a film on an object by using gaseous gas of an organometallic compound; First pressure feeding means installed in the exhaust pipe passage and sucking gas in the film forming apparatus and feeding the gas through the exhaust pipe passage; Second pressure feeding means provided at a portion of the exhaust pipe path downstream from the first pumping means, for pumping the exhaust gas exhausted from the first pumping means through the exhaust pipe path; Inert gas is supplied to the said 1st conveying means, and the inlet gas supply pressure restrict | limits the inhalation gas from the film-forming apparatus into the site | part of the 1st conveying means which is more than the thermal decomposition temperature of an organometallic compound. Inert gas supply means; Cooling means provided in said second conveying means and cooling the second conveying means at a temperature lower than the thermal decomposition temperature of the organometallic compound, thereby suppressing precipitation of the organometallic compound contained in the exhaust gas introduced into the conveying means; And a decontamination means provided at a portion of the exhaust pipe passage downstream from the second pressure feeding means to remove the organometallic compound contained in the exhaust gas introduced through the exhaust pipe passage. . 제9항에 있어서, 상기 제해수단은 배기가스중의 유기금속 화합물을 연소시켜서 제해하는 것을 특징으로 하는 성막처리장치용 배기 시스템.10. The exhaust system according to claim 9, wherein the removing means burns and removes the organometallic compound in the exhaust gas. 제10항에 있어서, 상기 제해수단은, 배기관로를 통하여 배기가스가 도입되는 하우징과, 하우징내로 건조 공기를 공급하는 건조공기 공급수단과, 하우징내에 설치된 세라믹 히터판으로 이루어지고, 세라믹 히터판으로부터의 방사열과 건조공기에 의해 하우징내로 도입된 배기가스중의 유기금속 화합물을 연소시켜서 제해하는 것을 특징으로 하는 성막처리장치용 배기 시스템.The method according to claim 10, wherein the removing means comprises a housing into which exhaust gas is introduced through the exhaust pipe passage, dry air supply means for supplying dry air into the housing, and a ceramic heater plate provided in the housing. And exhausting and removing organometallic compounds in the exhaust gas introduced into the housing by radiant heat and dry air. 제9항에 있어서, 상기 제해수단은, 배기가스중의 유기금속 화합물을 화학적으로 반응시켜서 제해하는 것을 특징으로 하는 성막처리장치용 배기 시스템.10. The exhaust system according to claim 9, wherein the removing means chemically reacts and removes the organometallic compound in the exhaust gas. 제9항에 있어서, 상기 제2의 압송수단은, 한쌍의 회전자가 서로 접촉하여 회전하는 것에 의하여 배기가스를 압송하는 루츠식의 진공펌프인 것을 특징으로 하는 성막처리장치용 배기 시스템.10. The exhaust system for a film forming apparatus according to claim 9, wherein said second conveying means is a Roots-type vacuum pump that feeds exhaust gas by rotating a pair of rotors in contact with each other. 제13항에 있어서, 상기 냉각수단은 상기 제2의 압송수단의 상류측으로부터 하류측으로 연장된 냉각관로로 이루어지고, 배기가스의 압축률이 높은 상기 제2의 압송수단의 하류측으로부터 냉각관로내로 냉매가 흐르는 것을 특징으로 하는 성막처리장치용 배기 시스템.The cooling means according to claim 13, wherein the cooling means comprises a cooling conduit extending from an upstream side to a downstream side of the second conveying means, and the refrigerant flows into the cooling conduit from a downstream side of the second conveying means having a high compression ratio of exhaust gas. An exhaust system for a film forming apparatus, characterized in that flowing. 제9항에 있어서, 상기 제해수단보다 하류측의 배기관로의 부위에 설치되어, 배기가스에 수분을 접촉시키는 것에 의하여 배기가스중의 함유물을 제거하는 물 스크러버를 구비하는 것을 특징으로 하는 성막처리장치용 배기 시스템.10. The film forming process according to claim 9, further comprising: a water scrubber provided at a portion of the exhaust pipe downstream from the removing means and removing moisture in the exhaust gas by contacting the exhaust gas with moisture. Exhaust system for the device. 제9항에 있어서, 상기 유기금속 화합물은, DMAH(디메틸알루미늄하이드라이드), TIBA(트리이소부틸알루미늄), DMEAA(디메틸에틸아미노알란), TMEAA(트리메틸아미노알란), TMA(트리메틸알루미늄), TMG(트리메틸갈륨), 트리알킬포스핀으로 구성된 그룹중 어느 하나인 것을 특징으로 하는 성막처리장치용 배기 시스템.The organometallic compound according to claim 9, wherein the organometallic compound is DMAH (dimethyl aluminum hydride), TIBA (triisobutylaluminum), DMEAA (dimethylethylaminoalan), TMEAA (trimethylaminoalan), TMA (trimethylaluminum), or TMG. (Trimethylgallium), and an exhaust system for a film forming apparatus, characterized in that any one of a group consisting of trialkylphosphine. 제9항에 있어서, 상기 제1의 압송수단은, 그의 부위에 다수의 회전날개를 갖는 터보분자 펌프이고, 상기 불활성가스 공급수단은 상기 회전날개를 회전시키는 회전축용 축받이 부에 불활성가스를 공급하는 것을 특징으로 하는 성막처리장치용 배기 시스템.10. The method according to claim 9, wherein the first conveying means is a turbomolecular pump having a plurality of rotary blades in its portion, and the inert gas supply means supplies an inert gas to the bearing portion for the rotating shaft for rotating the rotary blades. An exhaust system for a film forming apparatus, characterized in that. 성막처리장치로부터 유기금속 화합물을 포함하는 가스를 배기관로내로 흡인하고; 가스중의 유기금속 화합물을 석출시키는 일이 없이 가스를 배출관로를 통하여 제해수단으로 흘려보내고; 상기 제해수단에서 가스중에 포함되는 유기금속 화합물을 제해하는 것을 특징으로 하는 성막처리장치내의 가스를 배기하는 방법.Drawing a gas containing an organometallic compound from the film forming apparatus into the exhaust pipe passage; Flowing gas through the discharge pipe to the decontamination means without depositing the organometallic compound in the gas; And exhausting the gas in the film forming apparatus, wherein the decontamination means removes the organometallic compound contained in the gas. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019970001902A 1996-01-24 1997-01-23 Exhaust system for a film forming apparatus KR100352379B1 (en)

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