KR970055001A - 조화 수동 모드 록킹의 반도체 레이저 - Google Patents
조화 수동 모드 록킹의 반도체 레이저 Download PDFInfo
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- KR970055001A KR970055001A KR1019950054541A KR19950054541A KR970055001A KR 970055001 A KR970055001 A KR 970055001A KR 1019950054541 A KR1019950054541 A KR 1019950054541A KR 19950054541 A KR19950054541 A KR 19950054541A KR 970055001 A KR970055001 A KR 970055001A
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- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
- H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
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- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
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- H01S5/00—Semiconductor lasers
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- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/185—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL]
- H01S5/187—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL] using Bragg reflection
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- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
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- H01S3/11—Mode locking; Q-switching; Other giant-pulse techniques, e.g. cavity dumping
- H01S3/1106—Mode locking
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- H01S3/1115—Passive mode locking using intracavity saturable absorbers
- H01S3/1118—Semiconductor saturable absorbers, e.g. semiconductor saturable absorber mirrors [SESAMs]; Solid-state saturable absorbers, e.g. carbon nanotube [CNT] based
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- H01S5/00—Semiconductor lasers
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- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/0615—Q-switching, i.e. in which the quality factor of the optical resonator is rapidly changed
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- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
- H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
- H01S5/06255—Controlling the frequency of the radiation
- H01S5/06256—Controlling the frequency of the radiation with DBR-structure
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- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/065—Mode locking; Mode suppression; Mode selection ; Self pulsating
- H01S5/0657—Mode locking, i.e. generation of pulses at a frequency corresponding to a roundtrip in the cavity
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- H—ELECTRICITY
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- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/065—Mode locking; Mode suppression; Mode selection ; Self pulsating
- H01S5/0658—Self-pulsating
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- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
- H01S5/1206—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers having a non constant or multiplicity of periods
- H01S5/1215—Multiplicity of periods
- H01S5/1218—Multiplicity of periods in superstructured configuration, e.g. more than one period in an alternate sequence
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- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/3408—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers characterised by specially shaped wells, e.g. triangular
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Abstract
본 발명은 수동모드록킹 방식의 반도체 레이저에 관한 것으로 특히, 수배 기가 로부터 수 테라 헤르치 급에 이르는 반복률을 갖는 펄스열을 생성하기 위하여 고안된 반도체 양자우물 구조를 포함하는 반도체 레이저에 관한 것이다.
본 발명은, 이득구간의 양자우물층이 위쪽(또는 아래쪽)으로부터 순서대로 상온에서의 자동방출 스펙트럼의 피크파장이 각각-2,+,+2,,-(단,는 발진되는 펄스 레이저의 평균 파장)이 되도록 결정된 5개의 양자우물층으로 구성되고, 상기 초격회절판(SSG) 분배브락반사경(DBR)이 5개의 샘플링 구간으로 이루어지며, 각 샘플링 구간은 (-2)/(2n), (-)/(2n),/(2n), (+)/2n, (+2
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제2도는 본 발명에 따른 이득구간의 양자우물 구조도.
Claims (3)
- 포화흡수자, 이득구간, 위상정렬구간, 및 초격회절판 구조의 분배브락반사경으로 구성된 펄스 반도체 레이저에 있어서: 상기 이득구간의 양자우물층은 위쪽으로부터 순서대로 상온에서의 자동방출 스펙트럼의 피크파장이 각각-2,+,+2,,-(단,는 발진되는 펄스 레이저의 평균 파장)이 되도록 결정된 5개의 양자우물층으로 구성되고, 상기 초격회절판(SSG) 분배브락반사경(DBR)이 5개의 샘플링 구간으로 이루어지며, 각 샘플링 구간은 (-2)/(2n), (-)/(2n),/(2n), (+)/2n, (+2)/(2n)(단, n은 상기 초격회절판 분배브락반사경의 유효위상 굴절계수)간격의 5종의 다른 회절 피치가 각각 25주기, 5주기, 25주기, 5주기, 25주기의 두께로 순서대로 배열된 것을 특징으로 하는 수동모드록킹 방식의 반도체 레이저.
- 제1항에 있어서, 상기는 12nm내의 고정된 값인 것을 특징으로 하는 수동모드록킹 방식의 반도체 레이저.
- 포화흡수자, 이득구간, 위상정렬구간, 및 초격회절판 구조의 분배브락반사경으로 구성된 펄스 반도체 레이저에 있어서: 상기 이득구간의 양자우물층은 아래로부터 순서대로 상온에서의 자동방출 스펙트럼의 피크파장이 각각-2,+,+2,,-(단,는 발진되는 펄스 레이저의 평균 파장)이 되도록 결정된 5개의 양자우물층으로 구성되고, 상기 초격회절판(SSG) 분배브락반사경(DBR)이 5개의 샘플링 구간으로 이루어지며, 각 샘플링 구간은 (-2)/(2n), (-)/(2n),/(2n), (+)/2n, (+2)/(2n)(단, n은 상기 초격회절판 분배브락반사경의 유효위상 굴절계수)간격의 5종의 다른 회절 피치가 각각 25주기, 5주기, 25주기, 5주기, 25주기의 두께로 순서대로 배열된 것을 특징으로 하는 수동모드록킹 방식의 반도체 레이저.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950054541A KR970055001A (ko) | 1995-12-22 | 1995-12-22 | 조화 수동 모드 록킹의 반도체 레이저 |
US08/708,686 US5790579A (en) | 1995-12-22 | 1996-09-05 | Semiconductor laser device for pulse laser oscillation |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950054541A KR970055001A (ko) | 1995-12-22 | 1995-12-22 | 조화 수동 모드 록킹의 반도체 레이저 |
Publications (1)
Publication Number | Publication Date |
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KR970055001A true KR970055001A (ko) | 1997-07-31 |
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Application Number | Title | Priority Date | Filing Date |
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KR1019950054541A KR970055001A (ko) | 1995-12-22 | 1995-12-22 | 조화 수동 모드 록킹의 반도체 레이저 |
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US (1) | US5790579A (ko) |
KR (1) | KR970055001A (ko) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6580734B1 (en) | 1999-07-07 | 2003-06-17 | Cyoptics Ltd. | Laser wavelength stabilization |
EP1130710A3 (en) | 2000-01-20 | 2003-09-17 | Cyoptics (Israel) Ltd. | High repetition rate optical pulse generator |
GB2369491A (en) * | 2000-11-28 | 2002-05-29 | Kamelian Ltd | Tunable semiconductor laser |
US6816518B2 (en) * | 2001-03-20 | 2004-11-09 | Cyoptics (Israel) Ltd. | Wavelength tunable high repetition rate optical pulse generator |
US6862136B2 (en) | 2002-01-31 | 2005-03-01 | Cyoptics Ltd. | Hybrid optical transmitter with electroabsorption modulator and semiconductor optical amplifier |
GB0523522D0 (en) * | 2005-11-18 | 2005-12-28 | Sosabowski Jeremy | Optical comb frequency source |
US9543731B2 (en) * | 2015-03-17 | 2017-01-10 | Technische Universität Berlin | Method and device for generating short optical pulses |
US10615574B2 (en) * | 2018-05-17 | 2020-04-07 | Wisconsin Alumni Research Foundation | Superlattice heterostructures formed with single crystalline semiconductor nanomembranes and amorphous tunneling barrier layers |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5640409A (en) * | 1993-07-02 | 1997-06-17 | Sony Corporation | Semiconductor laser |
JPH07235732A (ja) * | 1993-12-28 | 1995-09-05 | Nec Corp | 半導体レーザ |
FR2716303B1 (fr) * | 1994-02-11 | 1996-04-05 | Franck Delorme | Laser à réflecteurs de Bragg distribués, accordable en longueur d'onde, à réseaux de diffraction virtuels activés sélectivement. |
KR0138860B1 (ko) * | 1994-12-09 | 1998-06-01 | 양승택 | 초격 회절판 구조의 분배 브락 반사경을 갖는 반도체 레이저 |
JPH08255954A (ja) * | 1995-03-17 | 1996-10-01 | Mitsubishi Electric Corp | 半導体レーザの構造及びその製造方法 |
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1995
- 1995-12-22 KR KR1019950054541A patent/KR970055001A/ko not_active Application Discontinuation
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1996
- 1996-09-05 US US08/708,686 patent/US5790579A/en not_active Expired - Fee Related
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US5790579A (en) | 1998-08-04 |
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