KR970052832A - Operation method of semiconductor device manufacturing equipment related to film formation - Google Patents
Operation method of semiconductor device manufacturing equipment related to film formation Download PDFInfo
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- KR970052832A KR970052832A KR1019950055719A KR19950055719A KR970052832A KR 970052832 A KR970052832 A KR 970052832A KR 1019950055719 A KR1019950055719 A KR 1019950055719A KR 19950055719 A KR19950055719 A KR 19950055719A KR 970052832 A KR970052832 A KR 970052832A
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- semiconductor device
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Abstract
막 형성과 관련된 반도체소자 제조설비의 운영방법이 개시되어 있다.A method of operating a semiconductor device manufacturing facility related to film formation is disclosed.
본 발명은 공정의 제어대상인 막두께에 대한 목표치를 설정하는 단계, 목표치를 이루기에 적합한 설비의 공정 변수들을 특정값으로 설정하는 단계, 상기 공정 변수값에 따라 공정을 진행하는 단계, 상기 공정에 따라 형성된 막 두께를 계측하는 단계 및 상기 목표치와 게측값을 비교하여 상기 목표치와 상기 계측값이 같다면 상기 설비의 공정 변수들의 조정이 없이 계속 공정을 진행하고, 목표치와 계측값이 서로 다른 경우,그 차이를 추출하여 설비에 새로운 공정 변수값을 설정하고, 변화된 공정 변수값에 의해 공정을 다시 진행하는 단계를 구비하여 이루어지는 막 형성 관련 반도체소자 제조설비 운영방법에 있어서, 상기 목표치와 상기 계측값의 비교 및 상기 새로운 공정 변수값의 설정이 자동두께조절장치에 의해 이루어지는 것을 특징으로 한다.The present invention comprises the steps of setting a target value for the film thickness to be controlled of the process, setting the process parameters of the equipment suitable for achieving the target value to a specific value, proceeding the process according to the process variable value, according to the process Measuring the formed film thickness and comparing the target value with the measured value, and if the target value and the measured value are the same, the process is continued without adjusting the process variables of the facility, and if the target value and the measured value are different from each other, A method for operating a film forming semiconductor device manufacturing facility comprising extracting a difference, setting a new process variable value in a facility, and then proceeding the process again with the changed process variable value, wherein the target value is compared with the measured value. And setting the new process variable value by means of an automatic thickness control device.
따라서, 일정한 조절기준에 따라 공정을 진행하는 설비의 공정 변수값을 자동적으로 조정하므로 인력을 절감하고 웨이퍼상에 일정한 두께의 막을 형성하는 효과를 가진다.Therefore, it automatically adjusts the process variable value of the equipment that proceeds the process according to a certain control criteria has the effect of reducing the manpower and forming a film of a constant thickness on the wafer.
선택도 : 제2도Selectivity: Second degree
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.
제2도는 본 발명의 일 실시예에 따른 막 형성 관련 반도체소자 제조설비의 운영방법을 나타낸 흐름도이다.2 is a flowchart illustrating a method of operating a film forming related semiconductor device manufacturing apparatus according to an exemplary embodiment of the present invention.
Claims (2)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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KR1019950055719A KR970052832A (en) | 1995-12-23 | 1995-12-23 | Operation method of semiconductor device manufacturing equipment related to film formation |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950055719A KR970052832A (en) | 1995-12-23 | 1995-12-23 | Operation method of semiconductor device manufacturing equipment related to film formation |
Publications (1)
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KR970052832A true KR970052832A (en) | 1997-07-29 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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KR1019950055719A KR970052832A (en) | 1995-12-23 | 1995-12-23 | Operation method of semiconductor device manufacturing equipment related to film formation |
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KR (1) | KR970052832A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100474226B1 (en) * | 2001-03-30 | 2005-03-08 | 가부시끼가이샤 도시바 | Method and apparatus for manufacturing semiconductor device, control method and control apparatus therefor, and simulation method and simulation apparatus of manufacturing process of semiconductor device |
CN115697027A (en) * | 2022-10-20 | 2023-02-03 | 合肥本源量子计算科技有限责任公司 | Preparation method of Josephson junction, quantum circuit and quantum chip |
-
1995
- 1995-12-23 KR KR1019950055719A patent/KR970052832A/en not_active Application Discontinuation
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100474226B1 (en) * | 2001-03-30 | 2005-03-08 | 가부시끼가이샤 도시바 | Method and apparatus for manufacturing semiconductor device, control method and control apparatus therefor, and simulation method and simulation apparatus of manufacturing process of semiconductor device |
CN115697027A (en) * | 2022-10-20 | 2023-02-03 | 合肥本源量子计算科技有限责任公司 | Preparation method of Josephson junction, quantum circuit and quantum chip |
CN115697027B (en) * | 2022-10-20 | 2024-05-07 | 本源量子计算科技(合肥)股份有限公司 | Preparation method of Josephson junction, quantum circuit and quantum chip |
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