KR970052725A - Method of removing nitride film of semiconductor device - Google Patents

Method of removing nitride film of semiconductor device Download PDF

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Publication number
KR970052725A
KR970052725A KR1019950047315A KR19950047315A KR970052725A KR 970052725 A KR970052725 A KR 970052725A KR 1019950047315 A KR1019950047315 A KR 1019950047315A KR 19950047315 A KR19950047315 A KR 19950047315A KR 970052725 A KR970052725 A KR 970052725A
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KR
South Korea
Prior art keywords
nitride film
semiconductor device
oxide film
solution
silicon substrate
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Application number
KR1019950047315A
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Korean (ko)
Inventor
최승봉
Original Assignee
김주용
현대전자산업 주식회사
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Application filed by 김주용, 현대전자산업 주식회사 filed Critical 김주용
Priority to KR1019950047315A priority Critical patent/KR970052725A/en
Publication of KR970052725A publication Critical patent/KR970052725A/en

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Abstract

본 발명은 반도체 제조공정중 필드산화막이 형성된 실리콘기판상의 질화막을 제거하는 방법을 제공하는 것으로, 인산용액에 불산 및 질산의 혼합용액을 첨가하는 습식식각방법으로 필드산화막이 형성된 실리콘기판상의 질화막 및 실리콘층을 제거하므로서 소자의 수율을 향상시킬 수 있는 효과가 있다.The present invention provides a method for removing a nitride film on a silicon substrate on which a field oxide film is formed during a semiconductor manufacturing process. There is an effect that can improve the yield of the device by removing the layer.

Description

반도체 소자의 질화막 제거방법Method of removing nitride film of semiconductor device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제1A도 내지 제1D도는 본 발명에 따른 반도체 소자의 질화막 제거방법을 설명하기 위한 소자의 단면도.1A to 1D are cross-sectional views of a device for explaining a method of removing a nitride film of a semiconductor device according to the present invention.

Claims (3)

반도체 소자의 질화막 제거방법에 있어서, 실리콘 기판상에 패드산화막, 실리콘층 및 질화막을 순차적으로 형성하는 단계와, 상기 단계로부터 소자분리 마스크를 이용하여 리소그라피 공정 및 식각공정으로 상기 질화막, 실리콘층 및 패드산화막을 순차적으로 식각하여 필드영역을 개방하는 단계와, 상기 단계로부터 상기 개방된 실리콘기판의 표면에 필드산화막을 형성한 후 상기 질화막 및 실리콘층을 습식식각용액으로 제거하는 단계로 이루어지는 것을 특징으로 하는 반도체 소자의 질화막 제거방법.A method of removing a nitride film of a semiconductor device, the method comprising: sequentially forming a pad oxide film, a silicon layer, and a nitride film on a silicon substrate; Etching the oxide film sequentially to open the field region, and forming a field oxide film on the surface of the open silicon substrate from the step, and then removing the nitride film and the silicon layer with a wet etching solution. Method of removing nitride film of semiconductor device. 제1항에 있어서, 상기 습식식각용액은 인산용액이 수용된 식각조에 불산 및 질산의 혼합액을 공급하므로써 질화막과 필드산화막이 9:1내지 12:1의 식각비를 갖도록 하는 것을 특징으로 하는 반도체 소자의 질화막 제거방법.The semiconductor device of claim 1, wherein the wet etching solution has a etch ratio of 9: 1 to 12: 1 by supplying a mixture of hydrofluoric acid and nitric acid to an etching bath containing phosphoric acid solution. Nitride removal method. 제2항에 있어서, 상기 혼합용액은 4.3내지 4.7mmoies/liter의 불산 및 17.0 내지 17.9mmoles/liter의 질산용액인 것을 특징으로 하는 반도체 소자의 질화막 제거방법.The method of claim 2, wherein the mixed solution is a hydrofluoric acid of 4.3 to 4.7 mmoles / liter and a nitric acid solution of 17.0 to 17.9 mmoles / liter. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019950047315A 1995-12-07 1995-12-07 Method of removing nitride film of semiconductor device KR970052725A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950047315A KR970052725A (en) 1995-12-07 1995-12-07 Method of removing nitride film of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950047315A KR970052725A (en) 1995-12-07 1995-12-07 Method of removing nitride film of semiconductor device

Publications (1)

Publication Number Publication Date
KR970052725A true KR970052725A (en) 1997-07-29

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KR1019950047315A KR970052725A (en) 1995-12-07 1995-12-07 Method of removing nitride film of semiconductor device

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KR (1) KR970052725A (en)

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