KR970052257A - Metal contact way - Google Patents

Metal contact way Download PDF

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Publication number
KR970052257A
KR970052257A KR1019950050886A KR19950050886A KR970052257A KR 970052257 A KR970052257 A KR 970052257A KR 1019950050886 A KR1019950050886 A KR 1019950050886A KR 19950050886 A KR19950050886 A KR 19950050886A KR 970052257 A KR970052257 A KR 970052257A
Authority
KR
South Korea
Prior art keywords
forming
metal
film
tungsten nitride
metal contact
Prior art date
Application number
KR1019950050886A
Other languages
Korean (ko)
Inventor
전영호
Original Assignee
김주용
현대전자산업 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김주용, 현대전자산업 주식회사 filed Critical 김주용
Priority to KR1019950050886A priority Critical patent/KR970052257A/en
Publication of KR970052257A publication Critical patent/KR970052257A/en

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Abstract

본 발명은 반도체 소자의 금속 콘택 형성 방법에 있어서; 층간절연막의 소정부위를 식각하여 하부전도층의 콘택부위를 노출시키는 콘택 홀을 형성하는 단계; 전체구조 상부에 장벽금속 역할을 하는 텅스텐질화막(WNx)을 형성하는 단계; 배선용 금속막을 형성하는 단계를 포함하는 것을 특징으로 하는 금속 콘택 형성 방법에 관한 것으로서, 장벽 특성이 우수한 텅스텐질화막을 장벽금속으로 사용함으로써, 보다 적은 두께로 형성 가능하며, 그 상부에 형성되는 알루미늄막의 층 덮힘을 개선하므로써 금속배선의 신뢰성을 향상시키는 효과를 가져 온다.The present invention provides a metal contact forming method of a semiconductor device; Etching a predetermined portion of the interlayer insulating film to form a contact hole exposing a contact portion of the lower conductive layer; Forming a tungsten nitride film (WNx) serving as a barrier metal on the entire structure; A metal contact forming method comprising the step of forming a metal film for wiring, wherein a tungsten nitride film having excellent barrier properties is used as a barrier metal, so that a thickness can be formed to a smaller thickness, and an aluminum film layer formed thereon By improving the covering, the reliability of the metal wiring is improved.

Description

금속 콘택 방법Metal contact way

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제2도는 본 발명의 일실시예에 따른 금속 콘택 단면도.2 is a cross-sectional view of the metal contact according to an embodiment of the present invention.

Claims (4)

반도체 소자의 금속 콘택 형성 방법에 있어서; 층간절연막의 소정부위를 식각하여 하부전도층의 콘택부위를 노출시키는 콘택 홀을 형성하는 단계; 전체구조 상부에 장벽금속 역할을 하는 텅스텐질화막(WNx)을 형성하는 단계; 배선용 금속막을 형성하는 단계를 포함하는 것을 특징으로 하는 금속 콘택 형성 방법.A method for forming a metal contact of a semiconductor device; Etching a predetermined portion of the interlayer insulating film to form a contact hole exposing a contact portion of the lower conductive layer; Forming a tungsten nitride film (WNx) serving as a barrier metal on the entire structure; Forming a metal film for wiring, characterized in that it comprises a metal contact forming method. 제1항에 있어서; 상기 하부전도층과 상기 텅스텐질화막 사이에 티타늄막을 형성하는 단계를 더 포함하는 것을 특징으로 하는 금속 콘택 형성 방법.The method of claim 1; Forming a titanium film between the lower conductive layer and the tungsten nitride film further comprising the step of forming a metal contact. 제1항 또는 제2항에 있어서; 상기 텅스텐질화막을 반응성 스피터링 방식으로 형성하는 것을 특징으로 하는 금속 콘택 형성 방법.The method of claim 1 or 2; And forming the tungsten nitride film in a reactive sputtering manner. 제1항 또는 제2항에 있어서; 상기 텅스텐질화막을 300Å 내지 500Å의 두께로 형성하는 것을 특징으로 하는 금속 콘택 형성 방법.The method of claim 1 or 2; The tungsten nitride film is formed to a thickness of 300 kPa to 500 kPa metal contact forming method. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019950050886A 1995-12-16 1995-12-16 Metal contact way KR970052257A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950050886A KR970052257A (en) 1995-12-16 1995-12-16 Metal contact way

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950050886A KR970052257A (en) 1995-12-16 1995-12-16 Metal contact way

Publications (1)

Publication Number Publication Date
KR970052257A true KR970052257A (en) 1997-07-29

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ID=66594207

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950050886A KR970052257A (en) 1995-12-16 1995-12-16 Metal contact way

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KR (1) KR970052257A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100301057B1 (en) * 1999-07-07 2001-11-01 윤종용 Semiconductor device having copper interconnection layer and manufacturing method thereof

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100301057B1 (en) * 1999-07-07 2001-11-01 윤종용 Semiconductor device having copper interconnection layer and manufacturing method thereof

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