KR970051241A - Sub-Wordline Driver of Semiconductor Memory Devices - Google Patents
Sub-Wordline Driver of Semiconductor Memory Devices Download PDFInfo
- Publication number
- KR970051241A KR970051241A KR1019950057078A KR19950057078A KR970051241A KR 970051241 A KR970051241 A KR 970051241A KR 1019950057078 A KR1019950057078 A KR 1019950057078A KR 19950057078 A KR19950057078 A KR 19950057078A KR 970051241 A KR970051241 A KR 970051241A
- Authority
- KR
- South Korea
- Prior art keywords
- word line
- transistor
- drain
- vss
- source
- Prior art date
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- Dram (AREA)
- Static Random-Access Memory (AREA)
Abstract
반도체 메모리장치의 서브 워드라인 드라이버가 포함되어 있다. 본 발명은, 다수의 로우 어드레스군에 의해 선택되는 제1신호에 게이트가 접속되고, 소수의 로우 어드레스군에 의해 선택되는 제2신호에 소오수가 접속되며, 드레인이 워드라인 신호를 출력하는 워드라인 드라이버 트랜지스터; 상기 워드라인 드라이버 트랜지스터의 드레인에 드레인이 접속되고, 접지전압(VSS)에 소오스가 접속되는 워드라인 VSS 키핑(Keeping) 트랜지스터; 상기 워드라인 VSS 키핑 트랜지스터의 게이트에 소오스가 접속되고, 공급전압에 드레인이 접속되며, 기준 전압에 게이트가 접속되는 제1모스 트랜지스터와, 성기 제1모스 트랜지스터의 소오스에 드레인이 접속되고, 상기 워드라인 VSS 키핑 트랜지스터의 드레인에 게이트가 접속되며, 접지전압(VSS)에 소오스가 접속되는 제2모스 트랜지스터로 구성되는 워드라인 VSS 키핑 제어수단을 구비하는 것을 특징으로 한다. 따라서 본 발명은 입력되는 신호들 사이의 타이밍 조절이 필요없으므로 메모리장치의 동작속도를 향상시킬 수 있으며, 스탠바이시 발생될 수 있는 마이크로 브리지를 감소시킬 수 있다. 또한 버싱라인을 줄일 수 있으므로 이로 인해 레이아웃 면적을 감소시킬 수 있으며, 펌핑 전압인 VPP가 갖는 부하를 줄일 수 있으므로 이로 인해 레이아웃 면적을 감소시킬 수 있으며, 펌핑 전압인 VPP가 갖는 부하를 줄일 수 있으므로 상기 VPP의 전압강하 손실을 막을 수 있다.The sub word line driver of the semiconductor memory device is included. In the present invention, a word line is connected to a gate of a first signal selected by a plurality of row address groups, a drain is connected to a second signal selected by a small number of row address groups, and a drain outputs a word line signal. Driver transistors; A word line VSS keeping transistor connected to a drain of the word line driver transistor and a source connected to a ground voltage VSS; A first MOS transistor having a source connected to a gate of the word line VSS keeping transistor, a drain connected to a supply voltage, a gate connected to a reference voltage, and a drain connected to a source of the first gen MOS transistor; And a word line VSS keeping control means comprising a second MOS transistor having a gate connected to the drain of the line VSS keeping transistor and a source connected to the ground voltage VSS. Therefore, since the present invention does not require timing adjustment between input signals, the operation speed of the memory device can be improved, and the microbridges that can be generated during standby can be reduced. In addition, since the busing line can be reduced, the layout area can be reduced, and the load of the pumping voltage VPP can be reduced, thereby reducing the layout area, and the load of the pumping voltage VPP can be reduced. The voltage drop loss of the VPP can be prevented.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.
제3도는 본 발명에 따른 서브 워드라인 드라이버의 구체회로도.3 is a detailed circuit diagram of a sub word line driver according to the present invention.
Claims (4)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950057078A KR970051241A (en) | 1995-12-26 | 1995-12-26 | Sub-Wordline Driver of Semiconductor Memory Devices |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950057078A KR970051241A (en) | 1995-12-26 | 1995-12-26 | Sub-Wordline Driver of Semiconductor Memory Devices |
Publications (1)
Publication Number | Publication Date |
---|---|
KR970051241A true KR970051241A (en) | 1997-07-29 |
Family
ID=66618327
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019950057078A KR970051241A (en) | 1995-12-26 | 1995-12-26 | Sub-Wordline Driver of Semiconductor Memory Devices |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR970051241A (en) |
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1995
- 1995-12-26 KR KR1019950057078A patent/KR970051241A/en not_active Application Discontinuation
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WITN | Withdrawal due to no request for examination |