KR970028757A - Thin-film transistor substrate for liquid crystal display device with repair line - Google Patents

Thin-film transistor substrate for liquid crystal display device with repair line Download PDF

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Publication number
KR970028757A
KR970028757A KR1019950044313A KR19950044313A KR970028757A KR 970028757 A KR970028757 A KR 970028757A KR 1019950044313 A KR1019950044313 A KR 1019950044313A KR 19950044313 A KR19950044313 A KR 19950044313A KR 970028757 A KR970028757 A KR 970028757A
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South Korea
Prior art keywords
gate line
electrode
gate
line
pixel electrode
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KR1019950044313A
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Korean (ko)
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KR0182247B1 (en
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배병성
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김광호
삼성전자 주식회사
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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136259—Repairing; Defects
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136259—Repairing; Defects
    • G02F1/136272—Auxiliary lines
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G02F1/136295—Materials; Compositions; Manufacture processes

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)

Abstract

기판 위에 화소 전극이 행렬의 형태로 형성되어 있으며, 화소 전극의 하부에는 절연막이 형성되어 있으며, 이 절연막에는 컨택홀이 형성되어 있어 이 컨택홀을 통하여 화소에 구동신호를 전달하는 게이트선이 접속되어 있으며, 게이트 화소 전극의 상측과 하측의 끝부분과 일부분 겹치도록 평행하게 형성되어 있으며, 화소 전극의 둘레에는 보조 게이트선이 형성되어 있으며, 화소 전극에 데이터 신호를 보내주는 데이터선은 화소 전극과 겹치기 않게 보조 게이트선 위에 형성되어 있는 액정 표시 장치용 박막 트랜지스터 기판에 있어서, 데이터선의 일부분이 단선되었을 때 단선된 데이터선의 주변인 제1단락 부분과 제2단락 부분을 레이저로 단락시킨 후 보조 게이트선의 제1단선 부분을 단선시킨 후 데이터선과 겹치지 않은 보조 게이트선의 일부분인 제2단선 부분을 단선시킴으로써 용이하게 리페어할 수 있게 하는 액정 표시 장치용 박막 트랜지스터 기판에 관한 것이다.A pixel electrode is formed in a matrix form on a substrate, and an insulating film is formed below the pixel electrode, and a contact hole is formed in the insulating film so that a gate line for transmitting a driving signal to the pixel is connected through the contact hole. And parallel to the upper and lower ends of the gate pixel electrode, the auxiliary gate line is formed around the pixel electrode, and the data line for transmitting the data signal to the pixel electrode overlaps the pixel electrode. In the thin film transistor substrate for a liquid crystal display device formed on the auxiliary gate line, the first short portion and the second short portion, which are the periphery of the disconnected data line when a portion of the data line is disconnected, are short-circuited with a laser and then the first of the auxiliary gate line. After disconnecting the disconnection part, the part of the auxiliary gate line that does not overlap with the data line A thin film transistor substrate for a liquid crystal display device that can be easily repaired by disconnecting the second disconnected portion.

Description

리페어선을 가지고 있는 액정 표시 장치용 박막 트랜지스터 기판Thin-film transistor substrate for liquid crystal display device with repair line

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제3도는 본 발명의 제1실시예에 따른 액정 표시 장치용 박막 트랜지스터 기판을 나타낸 평면도이고,3 is a plan view illustrating a thin film transistor substrate for a liquid crystal display according to a first exemplary embodiment of the present invention.

제4도는 본 발명의 제1실시예에 따른 액정 표시 장치용 박막 트랜지스터 기판의 리페어 방법을 나타낸 평면도이다.4 is a plan view illustrating a method for repairing a thin film transistor substrate for a liquid crystal display according to a first exemplary embodiment of the present invention.

Claims (4)

기판 위에 형성되어 있는 게이트 전극 및 게이트선, 상기 게이트 전극 및 게이트선 위에 형성되어 있는 절연막, 상기 절연막 위에 상기 게이트 전극에 대응하는 위치에 형성되어 있는 반도체막, 상기 반도체막과 연결되어 있는 소스 전극 및 드레인 전극 ,상기소스 전극에 연결되어 있으며 상기 게이트선과 교차되게 형성되어 있는 데이터선, 상기 드레인 전극 위에 형성되어 있는 화소 전극을 포함하는 액정 표시 장치용 박막 트랜지스터 기판에 있어서, 상기 게이트선은 이중 게이트선으로 상기 화소 전극 상부와 하부에 각각 형성되어 있으며, 상기 이중 게이트선을 서로 연결하며 상기 데이트선과 겹치도록 형성되어 있는 보조 게이트선을 더 포함하는 액정 표시 장치용 박막 트랜지스터 기판.A gate electrode and a gate line formed on the substrate, an insulating film formed on the gate electrode and the gate line, a semiconductor film formed at a position corresponding to the gate electrode on the insulating film, a source electrode connected to the semiconductor film; A thin film transistor substrate for a liquid crystal display device comprising a drain electrode, a data line connected to the source electrode and intersecting the gate line, and a pixel electrode formed on the drain electrode, wherein the gate line is a double gate line. And an auxiliary gate line formed on an upper portion and a lower portion of the pixel electrode, the auxiliary gate line connecting the double gate line to each other and overlapping the data line. 제1항에 있어서, 상기 보조 게이트 선은 이중으로 되어 있는 액정 표시 장치용 박막 트랜지스터 기판.The thin film transistor substrate of claim 1, wherein the auxiliary gate line is doubled. 기판 위에 형성되어 있는 게이트 전극 및 게이트선, 상기 게이트 전극 및 게이트선 위에 형성되어 있는 절연막, 상기 절연막 위에 상기 게이트 전극에 대응하는 위치에 형성되어 있는 반도체막, 상기 반도체막과 연결되어 있는 소스 전극 및 드레인 전극, 상기 소스 전극에 연결되어 있으며 상기 게이트선과 교차되게 형성되어 있는 데이터선, 상기 드레인 전극 위에 형성되어 있는 화소 전극을 포함하는 액정 표시 장치용 박막 트랜지스터 기판에 있어서, 상기 게이트선은 이중 게이트선으로서 상기 화소 전극 상부와 하부에 각각 형성되어 있으며, 상기 이중 게이트선을 서로 연결하며 상기 데이터선의 좌우에 각각 형성되어 있는 제1보조 게이트선, 상기 데이터선 좌우의 제1보조 게이트선을 서로 연결하는 다수의 제2보조 게이트선을 더 포함하는 액정 표시 장치용 박막 트랜지스터 기판.A gate electrode and a gate line formed on the substrate, an insulating film formed on the gate electrode and the gate line, a semiconductor film formed at a position corresponding to the gate electrode on the insulating film, a source electrode connected to the semiconductor film; A thin film transistor substrate for a liquid crystal display device comprising a drain electrode, a data line connected to the source electrode and formed to cross the gate line, and a pixel electrode formed on the drain electrode, wherein the gate line is a double gate line. A first auxiliary gate line formed on an upper side and a lower side of the pixel electrode, and connecting the double gate lines to each other, and the first auxiliary gate lines formed on the left and right sides of the data line, respectively; Liquid crystal further comprising a plurality of second auxiliary gate lines When the thin film transistor substrate for the device. 기판 위에 형성되어 있는 게이트 전극 및 게이트선, 상기 게이트 전극 및 게이트선 위에 형성되어 있는 절연막, 상기 절연막 위에 상기 게이트 전극에 대응하는 위치에 형성되어 있는 반도체막, 상기 반도체막과 연결되어 있는 소스 전극 및 드레인 전극, 상기 소스 전극에 연결되어 있으며 상기 게이트선과 교차되게 형성되어 있는 데이터선, 상기 드레인 전극 위에 형성되어 있는 화소 전극을 포함하는 액정 표시 장치용 박막 트랜지스터 기판에 있어서, 상기 게이트선을 이중 게이트선으로서 상기 화소 전극 상부와 하부에 각각 형성되어 있으며, 상기 이중 게이트선을 서로 연결하며 상기 데이트선의 좌우에 각각 형성되어 있는 제1보조 게이트선, 상기 제1보조 게이트선의 분지로서 상기 데이터선과 겹치는 다수의 제2보조 게이트선을 더 포함하는 액정 표시 장치용 박막 트랜지스터 기판.A gate electrode and a gate line formed on the substrate, an insulating film formed on the gate electrode and the gate line, a semiconductor film formed at a position corresponding to the gate electrode on the insulating film, a source electrode connected to the semiconductor film; A thin film transistor substrate for a liquid crystal display device comprising a drain electrode, a data line connected to the source electrode and intersecting the gate line, and a pixel electrode formed on the drain electrode, wherein the gate line is a double gate line. And a plurality of first auxiliary gate lines formed on upper and lower portions of the pixel electrode and connected to each other, respectively, and overlapping the data lines as branches of the first auxiliary gate line and the first auxiliary gate line respectively formed on the left and right sides of the data line. Liquid crystal further comprising a second auxiliary gate line Thin film transistor substrate for display device. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019950044313A 1995-11-28 1995-11-28 Thin film transistor substrate for liquid crystal display device having repair line KR0182247B1 (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100489872B1 (en) * 1997-11-21 2005-08-29 엘지.필립스 엘시디 주식회사 Thin film transistor matrix substrate and method for fabricating the same

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100686224B1 (en) * 2000-01-07 2007-02-22 삼성전자주식회사 a thin film transistor array panel for a liquid crystal display, a manufacturing method thereof and a repairing method thereof
KR100488338B1 (en) * 2000-05-09 2005-05-10 엘지.필립스 엘시디 주식회사 Array substrate for TFT type liquid crystal display device and method of manufacturing the same
KR100679515B1 (en) * 2000-05-10 2007-02-07 엘지.필립스 엘시디 주식회사 TFT array panel
KR100482165B1 (en) * 2002-10-21 2005-04-14 엘지.필립스 엘시디 주식회사 The substrate for LCD with repair patterns and method for fabricating the same
KR101090251B1 (en) * 2004-09-24 2011-12-06 삼성전자주식회사 Thin film transistor array panel and display apparatus including the same
TWI382264B (en) 2004-07-27 2013-01-11 Samsung Display Co Ltd Thin film transistor array panel and display device including the same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100489872B1 (en) * 1997-11-21 2005-08-29 엘지.필립스 엘시디 주식회사 Thin film transistor matrix substrate and method for fabricating the same

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