KR970007344A - Manufacturing Method of Thin Film Gas Sensor Array - Google Patents

Manufacturing Method of Thin Film Gas Sensor Array Download PDF

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Publication number
KR970007344A
KR970007344A KR1019950021549A KR19950021549A KR970007344A KR 970007344 A KR970007344 A KR 970007344A KR 1019950021549 A KR1019950021549 A KR 1019950021549A KR 19950021549 A KR19950021549 A KR 19950021549A KR 970007344 A KR970007344 A KR 970007344A
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South Korea
Prior art keywords
heater
forming
gas sensor
film
manufacturing
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KR1019950021549A
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Korean (ko)
Inventor
이규정
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구자홍
Lg 전자 주식회사
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Priority to KR1019950021549A priority Critical patent/KR970007344A/en
Publication of KR970007344A publication Critical patent/KR970007344A/en

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Abstract

본 발명은 박막가스센서 어레이의 제조방법은, 기판에 지지막을 형성하는 공정과, 상기 지지막 위에 지지막과의 접착 및 완충 능력을 향상시키기 위한 접착완충물질 및 Pt를 순차적층시킨 후 패터닝하여 히터를 형성하는 공정과, 후속공정시 상기 히터와 전극이 단락되지 않도록 절연막을 형성하는 공정과, 상기 히터 상부의 절연막을 선택적으로 식각하여 콘택홀을 형성하는 공정과, 상기 콘택홀을 통해 히터와 접촉하도록 Pt를 소정의 두께로 증착시킨 후 패터닝하여 히터패드를 형성하는 공정과, 상기 절연막 위에 히터 및 히터패드와 절연되도록 다수개의 전극 및 온도센서를 형성하는 공정과, 상기 각각의 전극 위에 서로 다른 감지막을 형성하는 공정과, 상기 기판의 뒷면을 식각하는 공정을 포함하여 이루어지며, 가스센서 어레이의 지지막과 히터의 최적조건 제조로 가스센서를 이용할때 생기는 전력소모를 최소화하였고, 특히 센서 한개를 동작시킬때의 소비전력이 아니고 4개의 센서를 동작시킬때의 전력소모이므로 상기 전력소모의 감소를 극소화할 수 있으며, 단순히 소비전력만을 낮춘것이 아니라 센서의 성능인 감도, 응답속도, 신뢰도 등도 고려하여 감지막의 조건을 최적화시킴으로써 상기한 가스센서의 일반적인 구비조건을 충분히 만족시키며, 단일가스센서로는 식별이 어려워 센서 어레이와 패턴인식기술을 접목시켜 학습에 의해 가스 또는 냄새나 이를 발생시키는 모든 물질에 대해 인식이 가능한 전자코 시스템의 기본가스센서소자로 사용할 수 있을 뿐만 아니라 휴대용 센서나 센서시스템 등 저전력이 요구되어 밧데리로 동작시켜야 하는 곳에 용이하게 이용할 수 있는 효과가 있다.According to the present invention, a method of manufacturing a thin film gas sensor array includes a process of forming a support film on a substrate, and subsequently layering an adhesive buffer material and Pt for improving adhesion and buffering ability with the support film on the support film and then patterning the heater. Forming an insulating film so that the heater and the electrode are not short-circuited in a subsequent process, selectively etching the insulating film on the heater to form a contact hole, and contacting the heater through the contact hole. Forming a heater pad by depositing and patterning Pt to a predetermined thickness so as to form a heater pad, forming a plurality of electrodes and a temperature sensor to be insulated from the heater and the heater pad on the insulating film, and different sensing on the respective electrodes And forming a film, and etching a back surface of the substrate, wherein the support film and the heater of the gas sensor array are formed. It is possible to minimize the reduction in power consumption because the power consumption when using gas sensor is minimized by manufacturing the optimum condition, especially the power consumption when operating four sensors, not power consumption when operating one sensor. Not only lowering power consumption but also considering the sensor's performance, sensitivity, response speed, reliability, etc., by optimizing the conditions of the sensing film, it satisfies the general requirements of the gas sensor, and it is difficult to identify with a single gas sensor. By combining pattern recognition technology, it can be used as a basic gas sensor element of electronic nose system that can recognize gas or odor or any substance that generates it by learning, and also operates as battery because it requires low power such as portable sensor or sensor system. There is an effect that can be easily used where it should be .

Description

박막가스센서 어레이의 제조방법Manufacturing Method of Thin Film Gas Sensor Array

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제4도는 본 발명에 이한 박막가스센서 어레이의 제조공정도, 제5도는 본 발명에 의한 박막가스센서 어레이의 단면도, 제6도는 본 발명에 의한 박막가스센서 어레이의 평면도, 제7도는 본 발명에 의한 박막가스센서 어레이의 패키지 구성도, 제8도는 본 발명에 의한 박막가스센서 어레이의 특성을 측정하기 위한 가스측정장치의 구성도.4 is a manufacturing process diagram of a thin film gas sensor array according to the present invention, FIG. 5 is a sectional view of a thin film gas sensor array according to the present invention, FIG. 6 is a plan view of a thin film gas sensor array according to the present invention, and FIG. Fig. 8 is a configuration diagram of a gas measuring apparatus for measuring the characteristics of the thin film gas sensor array according to the present invention.

Claims (4)

기판에 지지막을 형성하는 공정과, 상기 지지막 위에 지지막과의 접착 및 완충 능력을 향상시키기 위한 접착완충물질 및 Pt를 순차적층시킨 후 패터닝하여 히터를 형성하는 공정과, 후속공정시 상기 히터와 전극이 단락되지 않도록 절연막을 형성하는 공정과, 상기 히터 상부의 절연막을 선택적으로 식각하여 콘택홀을 형성하는 공정과, 상기 콘택홀을 통해 히터와 접촉하도록 Pt를 소정의 두께로 증착시킨 후 패터닝하여 히터패드를 형성하는 공정과, 상기 절연막 위에 히터 및 히터패드와 절연되도록 다수개의 전극 및 온도센서를 형성하는 공정과, 상기 각각의 전극 위에 서로 다른 감지막을 형성하는 공정과, 상기 기판의 뒷면을 식각하는 공정을 포함하여 이루어진 것을 특징으로 하는 박막가스센서 어레이의 제조방법.Forming a heater by sequentially forming a support film on the substrate, and sequentially patterning an adhesive buffer material and Pt to improve adhesion and buffering ability with the support film on the support film, and forming a heater; Forming an insulating film so that an electrode is not short-circuited, forming a contact hole by selectively etching the insulating film on the heater, and depositing and patterning Pt to a predetermined thickness so as to contact the heater through the contact hole. Forming a heater pad, forming a plurality of electrodes and a temperature sensor on the insulating film so as to be insulated from the heater and the heater pad, forming a different sensing film on each of the electrodes, and etching the back surface of the substrate Method of manufacturing a thin film gas sensor array, characterized in that comprising a step to. 제1항에 있어서, 상기 지지막은 기판 양면에 800℃ 정도의 온도에서 저압화학기상증착법으로 Si3N4를 2000Å 정도의 두께로 증착시키는 공정과, 상기 기판 앞면 Si3N4위에만 450℃ 정도의 온도에서 SiH4, PH3, O3가스를 사용하여 대기압 화학증착법으로 PSG를 1.4㎛ 정도의 두께로 증착시키는 과정을 포함하여 이루어진 것을 특징으로 하는 박막가스센서 어레이의 제조방법.Claim wherein the support film step, the substrate front Si 3 N 4 man about 450 ℃ over which the Si 3 N 4 to a low-pressure chemical vapor deposition deposited to a thickness of about 2000Å at a temperature of about 800 ℃ to the substrate on both sides to the first Method of manufacturing a thin film gas sensor array comprising the step of depositing the PSG to a thickness of about 1.4㎛ by atmospheric chemical vapor deposition using a SiH 4 , PH 3 , O 3 gas at a temperature of. 제1항에 있어서, 상기 접착완충물질은 Ti이며, 상기 PSG 위에 7.5m torr의 압력에서 DC 스퍼터링법으로 500Å 정도 증착시켜 이루어진 것을 특징으로 하는 박막가스센서 어레이의 제조방법.The method of claim 1, wherein the adhesion buffer material is Ti, and the deposition buffer material is deposited on the PSG at a pressure of 7.5 m torr by DC sputtering at about 500 kPa. 제1항에 있어서, 상기 히터는 상기 접착완충물질 위에 접착완충물질 증착시와 동일한 스퍼터링 조건하에서 Pt를 2500Å 정도 증착시키고, 리프트 오프공정으로 패터닝한 후 550℃의 N2분위기에서 30분동안 열처리하여 이루어진 것을 특징으로 하는 박막가스센서 어레이의 제조방법.The method of claim 1, wherein the heater is deposited on the adhesive buffer material under the same sputtering conditions as the deposition of the adhesive buffer material, about 2500Å Pt, and patterned by a lift-off process heat treatment for 30 minutes in an N 2 atmosphere of 550 ℃ Method of manufacturing a thin film gas sensor array, characterized in that made. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019950021549A 1995-07-21 1995-07-21 Manufacturing Method of Thin Film Gas Sensor Array KR970007344A (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100942439B1 (en) * 2007-12-28 2010-02-17 전자부품연구원 Fabricating method for micro gas sensor and the same
KR20240054429A (en) 2022-10-18 2024-04-26 (주)에스엔디글로벌 Sensor array and gas sensing device including the same

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100942439B1 (en) * 2007-12-28 2010-02-17 전자부품연구원 Fabricating method for micro gas sensor and the same
KR20240054429A (en) 2022-10-18 2024-04-26 (주)에스엔디글로벌 Sensor array and gas sensing device including the same

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