KR970003595Y1 - Plasma cvd apparatus having anti-reverse flow structure - Google Patents
Plasma cvd apparatus having anti-reverse flow structure Download PDFInfo
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- KR970003595Y1 KR970003595Y1 KR2019940005735U KR19940005735U KR970003595Y1 KR 970003595 Y1 KR970003595 Y1 KR 970003595Y1 KR 2019940005735 U KR2019940005735 U KR 2019940005735U KR 19940005735 U KR19940005735 U KR 19940005735U KR 970003595 Y1 KR970003595 Y1 KR 970003595Y1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45587—Mechanical means for changing the gas flow
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Abstract
내용없음.None.
Description
제1도는 종래에 의한 플라즈마 화학기상증착 장비의 구성을 나타낸 개략도.1 is a schematic view showing the configuration of a conventional plasma chemical vapor deposition equipment.
제2도는 종래에 의한 로드-록 챔버의 프로세스 시스템에 따른 구성을 나타낸 개략도.2 is a schematic view showing a configuration according to a process system of a conventional load-lock chamber.
제3도는 본 고안에 의한 역류방지장치가 구비된 플라즈마 화학기상증착장비의 일실시예 구성도.3 is a diagram illustrating an embodiment of a plasma chemical vapor deposition apparatus equipped with a backflow preventing device according to the present invention.
* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings
1 : 로드록챔버 2 : 프로세스챔버1: Load lock chamber 2: Process chamber
3 : 슬리트도어 4 : 배큠라인3: Slit Door 4: Baekin Line
5 : 아이솔레이션밸브 6 : 로드록펌프5: isolation valve 6: load lock pump
7 : 배기라인 8 : 질소퍼지라인7: exhaust line 8: nitrogen purge line
9 : 질소조절밸브 10 : 니들밸브9: nitrogen control valve 10: needle valve
본 고안은 반도체 제조공정중 패시베이션(Passivation) 공정을 진행하는 플라즈마 화학기상증착(PECVD) 장비에 관한 것으로, 특히 프로세스 챔버와 로드록 챔버 사이를 차단시키는 슬리트 도어(slit door)의 개방시 공기가 상기 로드록 챔버(load lock chamber)측으로 역류되는 것을 방지하는 역류방지장치가 구비된 플라즈마 화학기상증착장비에 관한 것이다.The present invention relates to a plasma chemical vapor deposition (PECVD) device that performs a passivation process in a semiconductor manufacturing process, and in particular, when air is opened during opening of a slit door that blocks a process chamber and a load lock chamber. The present invention relates to a plasma chemical vapor deposition apparatus having a backflow prevention device for preventing backflow to the load lock chamber side.
종래의 플라즈마 화학기상증착장비는 제1도에 도시한 바와 같이, 웨이퍼(도시면 도시하지 않음)를 로딩시켜 잔재하는 불순물이 제거되도록 진공시킨 후, 웨이퍼를 다음 공정의 수행을 위해 운반하는 로드록 챔버(1)와, 상기 로드록 챔버(1)의 일측에 설치되어 패시베이션(Passivation)공정을 수행하는 다수의 프로세스 챔버(2)가 구비된다.Conventional plasma chemical vapor deposition equipment, as shown in FIG. 1, loads a wafer (not shown) and vacuums them to remove residual impurities, and then loads the wafer for carrying out the next process. The chamber 1 and a plurality of process chambers 2 installed on one side of the load lock chamber 1 to perform a passivation process are provided.
또한, 상기 프로세스 챔버(2)와 로드록 챔버(1) 사이에 양 챔버를 차단시키는 슬리트 도어(3)가 구비되어 웨이퍼상에 플라즈마를 이용하여 저온에서 양질의 산화물 및 질화물 필름을 장착시키도록 공정을 수행한다.In addition, a slit door 3 is provided between the process chamber 2 and the load lock chamber 1 to block both chambers so as to mount a high quality oxide and nitride film on the wafer at a low temperature using plasma. Perform the process.
상기와 같이 구성된 종래의 플라즈마 화학기상증착장비는 상기 로드록챔버(1)에 대기압 상태에서 웨이퍼를 로딩시키고, 외부에 설치된 진공펌프가 펌핑을 하여 상기 로드록 챔버(1)에 연결된 배큠라인(4)을 통하여 기초압력(약 350m TORR)까지 진공시키면, 상기 배큠라인(4)의 소정위치에 설치된 아이솔레이션 밸브(Isolation valve)(5)가 차폐되고, 상기 슬리트 도어(3)가 개방되어 상기 웨이퍼를 프로세스 챔버(2)에 로딩시킨다.The conventional plasma chemical vapor deposition apparatus configured as described above loads a wafer at atmospheric pressure in the load lock chamber 1, and a vacuum line installed at the outside pumps the vacuum line 4 connected to the load lock chamber 1. Is vacuumed to a basic pressure (about 350 m TORR), the isolation valve (5) installed at a predetermined position of the vacuum line (4) is shielded, and the slit door (3) is opened to open the wafer. Is loaded into the process chamber 2.
상기 프로세스 챔버(2)내로 로딩 후 슬리트 도어(3) 차폐되면 아이솔레이션 밸브(5)가 개방되어 상기 로드록 챔버(1)내부는 압력이 70m TORR까지 진공된다.When the slit door 3 is shielded after loading into the process chamber 2, the isolation valve 5 is opened so that the pressure inside the load lock chamber 1 is vacuumed up to 70 m TORR.
또한, 상기 프로세스 챔버(2)내로 로딩된 웨이퍼는 패시베이션 공정 진행 후 언로딩 하게 되는데, 이대 로드록 챔버(1)의 압력이 70m TORR까지 내려간 상태에서 아이솔레이션 밸브(5)가 닫혀지고, 슬리트 도어(3)가 개방됨과 동시에 로봇 아암(도면에 도시하지 않음)이 프로세스 챔버(2)에서 로드록 챔버(1)로 웨이퍼를 운반시킨다.In addition, the wafer loaded into the process chamber 2 is unloaded after the passivation process is performed, and the isolation valve 5 is closed while the pressure of the load lock chamber 1 is lowered to 70 m TORR, and the slit door At the same time as 3 is opened, a robot arm (not shown) carries the wafer from the process chamber 2 to the load lock chamber 1.
상기 과정에서 상기 슬리트 도어의 개방시 프로세스 챔버와 로드록 챔버내의 압력이 비슷하여 상기 프로세스 챔버의 배큠라인에서 프로세스 챔버내로 공기의 역류 현상이 발생하여 상기 로드록 챔버내부가 오염되고, 상기 웨이퍼에 불순물이 다량 발생되는 문제점을 내포하고 있다.In the process, the pressure in the process chamber and the load lock chamber is similar when the slit door is opened, so that a backflow of air occurs in the process chamber in the process line and contaminates the inside of the load lock chamber. There is a problem that a large amount of impurities are generated.
따라서, 본 고안은 상기의 제반 문제점을 해결하기 위하여 안출된 것으로써, 로드록 챔버의 압력을 프로세스 챔버의 압력보다 높여 슬리트 도어의 개방시 프로세스 챔버에서 역류방지장치를 제공함에 그 목적이 있다.Accordingly, an object of the present invention is to provide a backflow prevention device in a process chamber when opening a slit door by increasing the pressure of the load lock chamber higher than the pressure of the process chamber.
상기 목적을 달성하기 위하여 본 발명은, 그 일측 하단에는 소정의 로드록펌프가 구비되고, 그 타측 상단에는 배기라인이 구비된 로드록 챔버와, 상기 로드록 챔버의 일측에 위치되며, 소정의 배큠라인을 구비하여 그 내부를 진공시키는 적어도 하나 이상의 프로세스 챔버와, 상기 로드록 챔버와 프로세스 챔버 사이에 구비되어 상기 양챔버를 차단시키는 적어도 하나 이상의 슬리트 도어가 구비된 플라즈마 화학기상증착장비에 있어서, 상기 로드록 챔버의 배기라인 소정위치에 연결되어 상기 슬리트도어의 개방시 프로세스 챔버의 배큠라인에서 역류되는 공기가 로드록 챔버내부로 인입되는 것을 방지하도록 질소를 상기 로드록 챔버내로 인입시켜 압력을 높게 한 역류방지수단을 제공한다.In order to achieve the above object, the present invention is provided with a predetermined load lock pump at a lower end of one side thereof, a load lock chamber having an exhaust line at an upper end of the other side thereof, and positioned at one side of the load lock chamber. A plasma chemical vapor deposition apparatus having at least one process chamber having a line and vacuuming the interior thereof, and at least one slit door provided between the load lock chamber and the process chamber to block both chambers, Connected to an exhaust line of the load lock chamber to introduce nitrogen into the load lock chamber to prevent air flowing back from the process line in the process chamber into the load lock chamber when the slitting door is opened. It provides a high backflow prevention means.
이하, 첨부된 제3도의 도면을 참조하여 본 고안의 실시예를 상세히 설명하면 다음과 같다.Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings of FIG. 3.
제3도는 본 고안에 의한 역류방지장치가 구비된 플라즈마 화학기상증착장비의 일실시예 구성도로서, 도면에서 1은 로드록 챔버, 2는 프로세스밸브, 3은 슬리트 도어, 4는 배큠라인, 5는 아이솔레이션밸브, 6은 로드록 펌프, 7은 배기라인, 8는 질소퍼지라인, 9는질소조절밸브, 10은 니들밸브를 각각 나타낸 것이다.3 is a configuration of one embodiment of a plasma chemical vapor deposition apparatus equipped with a backflow prevention device according to the present invention, 1 is a load lock chamber, 2 is a process valve, 3 is a slit door, 4 is a vacuum line, 5 is the isolation valve, 6 is the load lock pump, 7 is the exhaust line, 8 is the nitrogen purge line, 9 is the nitrogen control valve and 10 is the needle valve.
도면에 도시한 바와 같이, 본 고안에 의한 역류방지장치가 구비된 플라즈마 화학기상증착장비는 상기에서 기술된 바와 같이, 상기 웨이퍼를 대기압상태에서 로딩시키고, 기초압력까지 펌핑하여 진공시키는 로드록 펌프(6)와, 질소를 배출시키는 배기라인(7)이 구비된 로드록 챔버(1)와, 그 일측에 펌핑라인을 구비시켜 진공상태에서 상기 웨이퍼에 패시베이션 공정을 수행하기 위한 적어도 하나 이상의 프로세스 챔버(2)와, 상기 로드록 챔버(1) 및 프로세스 챔버(2)를 차단시키는 슬리트 도어(3)로 구성되어 패시베이션공정을 수행하는데, 상기 패시베이션 공정완료 후 로드록 챔버(1)측으로 상기 웨이퍼를 운반시, 프로세스 챔버(2)의 배큠라인에서 역류되는 공기를 막기 위하여 로드록 챔버(1)의 배기라인(7) 소정위치에는 질소 퍼지라인(8)을 구비시켜 상기 로드록 챔버(6)내의 압력이 프로세스 챔버(2)내의 압력보다 높도록 질소를 불어 넣어준다.As shown in the drawings, a plasma chemical vapor deposition apparatus equipped with a backflow prevention device according to the present invention is a load lock pump for loading the wafer at atmospheric pressure, pumping to a basic pressure and vacuuming as described above ( 6), a load lock chamber 1 having an exhaust line 7 for discharging nitrogen, and at least one process chamber for providing a pumping line on one side to passivate the wafer under vacuum. 2) and a slit door 3 which blocks the load lock chamber 1 and the process chamber 2 to perform a passivation process. After completion of the passivation process, the wafer is moved to the load lock chamber 1 side. During transport, a nitrogen purge line 8 is provided at a predetermined position of the exhaust line 7 of the load lock chamber 1 to prevent the air flowing back from the backing line of the process chamber 2. Deurok pressure in the chamber 6 gives blown with nitrogen so as to be higher than the pressure in the process chamber (2).
여기서, 상기 질소퍼지라인(8) 소정위치에는 질소의 인입을 조절하는 조절밸브(9)와 유동저항을 제어하는 니들밸브(10)가 각각 구비되어 로드록 챔버(1)내의 압력을 적절히 조정하게 된다.Here, the nitrogen purge line 8 is provided with a control valve 9 for regulating the introduction of nitrogen and a needle valve 10 for controlling the flow resistance at a predetermined position to adjust the pressure in the load lock chamber 1 appropriately. do.
상기와 같이 구성되는 본 고안은 상기 웨이퍼의 패시베이션 공정 완료 후의 로드록 챔버와 프로세스 챔버의 압력차를 크게 유지시키므로서 공기의 역류에 의한 챔버내의 오염 및 불순물 발생을 최소화하는 효과가 있다.The present invention configured as described above has an effect of minimizing contamination and impurities in the chamber due to backflow of air while maintaining a large pressure difference between the load lock chamber and the process chamber after the passivation process of the wafer is completed.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR2019940005735U KR970003595Y1 (en) | 1994-03-21 | 1994-03-21 | Plasma cvd apparatus having anti-reverse flow structure |
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| Application Number | Priority Date | Filing Date | Title |
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| KR2019940005735U KR970003595Y1 (en) | 1994-03-21 | 1994-03-21 | Plasma cvd apparatus having anti-reverse flow structure |
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| KR950028659U KR950028659U (en) | 1995-10-20 |
| KR970003595Y1 true KR970003595Y1 (en) | 1997-04-18 |
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| KR100795662B1 (en) * | 2006-12-28 | 2008-01-21 | 동부일렉트로닉스 주식회사 | Apparatus for etching wafer improved exhaust structure |
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