KR970001564U - 자동차용 후부차체의 보강구조 - Google Patents

자동차용 후부차체의 보강구조

Info

Publication number
KR970001564U
KR970001564U KR2019950014131U KR19950014131U KR970001564U KR 970001564 U KR970001564 U KR 970001564U KR 2019950014131 U KR2019950014131 U KR 2019950014131U KR 19950014131 U KR19950014131 U KR 19950014131U KR 970001564 U KR970001564 U KR 970001564U
Authority
KR
South Korea
Prior art keywords
reinforcement structure
rear body
automobile rear
automobile
reinforcement
Prior art date
Application number
KR2019950014131U
Other languages
English (en)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to KR2019950014131U priority Critical patent/KR970001564U/ko
Priority to US08/705,556 priority patent/US5748543A/en
Publication of KR970001564U publication Critical patent/KR970001564U/ko

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B62—LAND VEHICLES FOR TRAVELLING OTHERWISE THAN ON RAILS
    • B62D—MOTOR VEHICLES; TRAILERS
    • B62D25/00—Superstructure or monocoque structure sub-units; Parts or details thereof not otherwise provided for
    • B62D25/20—Floors or bottom sub-units
    • B62D25/2009—Floors or bottom sub-units in connection with other superstructure subunits
    • B62D25/2027—Floors or bottom sub-units in connection with other superstructure subunits the subunits being rear structures
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/72—Masking faults in memories by using spares or by reconfiguring with optimized replacement algorithms
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B62—LAND VEHICLES FOR TRAVELLING OTHERWISE THAN ON RAILS
    • B62D—MOTOR VEHICLES; TRAILERS
    • B62D21/00—Understructures, i.e. chassis frame on which a vehicle body may be mounted
    • B62D21/02—Understructures, i.e. chassis frame on which a vehicle body may be mounted comprising longitudinally or transversely arranged frame members
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B62—LAND VEHICLES FOR TRAVELLING OTHERWISE THAN ON RAILS
    • B62D—MOTOR VEHICLES; TRAILERS
    • B62D43/00—Spare wheel stowing, holding, or mounting arrangements
    • B62D43/06—Spare wheel stowing, holding, or mounting arrangements within the vehicle body
    • B62D43/10—Spare wheel stowing, holding, or mounting arrangements within the vehicle body and arranged substantially horizontally
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
    • G11C29/785—Masking faults in memories by using spares or by reconfiguring using programmable devices with redundancy programming schemes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B60—VEHICLES IN GENERAL
    • B60Y—INDEXING SCHEME RELATING TO ASPECTS CROSS-CUTTING VEHICLE TECHNOLOGY
    • B60Y2306/00—Other features of vehicle sub-units
    • B60Y2306/01—Reducing damages in case of crash, e.g. by improving battery protection

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Combustion & Propulsion (AREA)
  • Transportation (AREA)
  • Mechanical Engineering (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
KR2019950014131U 1995-06-21 1995-06-21 자동차용 후부차체의 보강구조 KR970001564U (ko)

Priority Applications (2)

Application Number Priority Date Filing Date Title
KR2019950014131U KR970001564U (ko) 1995-06-21 1995-06-21 자동차용 후부차체의 보강구조
US08/705,556 US5748543A (en) 1995-06-21 1996-08-29 Self repairing integrated circuit memory devices and methods

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR2019950014131U KR970001564U (ko) 1995-06-21 1995-06-21 자동차용 후부차체의 보강구조

Publications (1)

Publication Number Publication Date
KR970001564U true KR970001564U (ko) 1997-01-21

Family

ID=60870603

Family Applications (1)

Application Number Title Priority Date Filing Date
KR2019950014131U KR970001564U (ko) 1995-06-21 1995-06-21 자동차용 후부차체의 보강구조

Country Status (2)

Country Link
US (1) US5748543A (ko)
KR (1) KR970001564U (ko)

Families Citing this family (42)

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TW374951B (en) * 1997-04-30 1999-11-21 Toshiba Corp Semiconductor memory
KR100256819B1 (ko) * 1997-06-30 2000-05-15 김영환 리던던트 동작을 안정시킨 싱크로노스 디램
US6011734A (en) * 1998-03-12 2000-01-04 Motorola, Inc. Fuseless memory repair system and method of operation
US6324666B1 (en) * 1998-04-20 2001-11-27 Mitsubishi Denki Kabushiki Kaisha Memory test device and method capable of achieving fast memory test without increasing chip pin number
US6175936B1 (en) * 1998-07-17 2001-01-16 Lucent Technologies Inc. Apparatus for detecting faults in multiple computer memories
US6067262A (en) * 1998-12-11 2000-05-23 Lsi Logic Corporation Redundancy analysis for embedded memories with built-in self test and built-in self repair
US6407944B1 (en) 1998-12-29 2002-06-18 Samsung Electronics Co., Ltd. Method for protecting an over-erasure of redundant memory cells during test for high-density nonvolatile memory semiconductor devices
KR100304700B1 (ko) * 1999-01-13 2001-09-26 윤종용 버퍼부를 내장하여 부하를 일정하게 하는 리던던시 회로
US6651202B1 (en) 1999-01-26 2003-11-18 Lsi Logic Corporation Built-in self repair circuitry utilizing permanent record of defects
JP2000268596A (ja) * 1999-03-12 2000-09-29 Mitsubishi Electric Corp 半導体記憶装置
US6453398B1 (en) 1999-04-07 2002-09-17 Mitsubishi Electric Research Laboratories, Inc. Multiple access self-testing memory
US6505308B1 (en) * 1999-10-28 2003-01-07 Lsi Logic Corporation Fast built-in self-repair circuit
US8164362B2 (en) * 2000-02-02 2012-04-24 Broadcom Corporation Single-ended sense amplifier with sample-and-hold reference
US7173867B2 (en) * 2001-02-02 2007-02-06 Broadcom Corporation Memory redundancy circuit techniques
DE10014388A1 (de) 2000-03-23 2001-10-04 Infineon Technologies Ag Verfahren zur Durchführung eines Burn-in-Prozesses eines Speichers
KR100338776B1 (ko) * 2000-07-11 2002-05-31 윤종용 멀티 로우 어드레스 테스트 가능한 반도체 메모리 장치 및그 테스트 방법
US6671834B1 (en) * 2000-07-18 2003-12-30 Micron Technology, Inc. Memory redundancy with programmable non-volatile control
JP2002056693A (ja) * 2000-08-10 2002-02-22 Mitsubishi Electric Corp 半導体記憶装置
US6426911B1 (en) * 2000-10-19 2002-07-30 Infineon Technologies Ag Area efficient method for programming electrical fuses
KR100390146B1 (ko) * 2001-01-31 2003-07-04 삼성전자주식회사 번-인 테스트 기능을 구비한 반도체 메모리 장치
US20020133769A1 (en) * 2001-03-15 2002-09-19 Cowles Timothy B. Circuit and method for test and repair
US6904552B2 (en) * 2001-03-15 2005-06-07 Micron Technolgy, Inc. Circuit and method for test and repair
DE10120670B4 (de) * 2001-04-27 2008-08-21 Qimonda Ag Verfahren zur Reparatur von Hardwarefehlern in Speicherbausteinen
US6744681B2 (en) * 2001-07-24 2004-06-01 Hewlett-Packard Development Company, L.P. Fault-tolerant solid state memory
US7085971B2 (en) * 2001-10-25 2006-08-01 International Business Machines Corporation ECC based system and method for repairing failed memory elements
US6879530B2 (en) * 2002-07-18 2005-04-12 Micron Technology, Inc. Apparatus for dynamically repairing a semiconductor memory
US6711076B2 (en) * 2002-07-26 2004-03-23 International Business Machines Corporation Active restore weak write test mode
US6819160B2 (en) * 2002-11-13 2004-11-16 International Business Machines Corporation Self-timed and self-tested fuse blow
US7734966B1 (en) * 2002-12-26 2010-06-08 Marvell International Ltd. Method and system for memory testing and test data reporting during memory testing
US7509543B2 (en) * 2003-06-17 2009-03-24 Micron Technology, Inc. Circuit and method for error test, recordation, and repair
JP2006128635A (ja) * 2004-09-30 2006-05-18 Matsushita Electric Ind Co Ltd 半導体集積回路
US7196952B1 (en) * 2005-12-07 2007-03-27 Atmel Corporation Column/sector redundancy CAM fast programming scheme using regular memory core array in multi-plane flash memory device
US7949985B2 (en) * 2007-06-01 2011-05-24 Synopsys, Inc. Method for compensation of process-induced performance variation in a MOSFET integrated circuit
US8214172B2 (en) * 2008-11-11 2012-07-03 Nec Laboratories America, Inc. Systems and methods for locating defective components of a circuit
JP5642567B2 (ja) * 2011-01-18 2014-12-17 ピーエスフォー ルクスコ エスエイアールエルＰＳ４ Ｌｕｘｃｏ Ｓ．ａ．ｒ．ｌ． 半導体装置及びその製造方法
KR101890301B1 (ko) * 2012-06-14 2018-08-21 삼성전자주식회사 메모리 장치와 이의 동작 방법
US8788891B2 (en) 2012-06-14 2014-07-22 International Business Machines Corporation Bitline deletion
US8595570B1 (en) * 2012-06-14 2013-11-26 International Business Machines Corporation Bitline deletion
US9875810B2 (en) * 2013-07-24 2018-01-23 Microsoft Technology Licensing, Llc Self-identifying memory errors
KR102117633B1 (ko) * 2013-09-12 2020-06-02 에스케이하이닉스 주식회사 셀프 리페어 장치
KR20160031631A (ko) * 2014-09-12 2016-03-23 삼성전자주식회사 반도체 메모리 장치의 리던던시 영역 테스트 방법
JP2020057257A (ja) * 2018-10-03 2020-04-09 富士通株式会社 情報処理装置及び修復管理プログラム

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US4473895A (en) * 1979-06-15 1984-09-25 Fujitsu Limited Semiconductor memory device
KR890003691B1 (ko) * 1986-08-22 1989-09-30 삼성전자 주식회사 블럭 열 리던던씨 회로
KR960008788B1 (en) * 1992-12-30 1996-07-03 Hyundai Electronics Ind Row redundancy circuit
JPH07226100A (ja) * 1994-02-15 1995-08-22 Nec Corp 半導体メモリ装置
KR960016807B1 (ko) * 1994-06-30 1996-12-21 삼성전자 주식회사 반도체 메모리 장치의 리던던시 회로
US5502676A (en) * 1995-04-24 1996-03-26 Motorola, Inc. Integrated circuit memory with column redundancy having shared read global data lines
US5566107A (en) * 1995-05-05 1996-10-15 Micron Technology, Inc. Programmable circuit for enabling an associated circuit

Also Published As

Publication number Publication date
US5748543A (en) 1998-05-05

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A201 Request for examination
E902 Notification of reason for refusal
E601 Decision to refuse application