KR960038621A - Optimal Data Generator for RAM Test - Google Patents
Optimal Data Generator for RAM Test Download PDFInfo
- Publication number
- KR960038621A KR960038621A KR1019950008990A KR19950008990A KR960038621A KR 960038621 A KR960038621 A KR 960038621A KR 1019950008990 A KR1019950008990 A KR 1019950008990A KR 19950008990 A KR19950008990 A KR 19950008990A KR 960038621 A KR960038621 A KR 960038621A
- Authority
- KR
- South Korea
- Prior art keywords
- ram
- data
- generator
- address
- optimal
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
- G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
- G11C29/14—Implementation of control logic, e.g. test mode decoders
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
- G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
- G11C29/18—Address generation devices; Devices for accessing memories, e.g. details of addressing circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
- G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
- G11C2029/1204—Bit line control
Landscapes
- Tests Of Electronic Circuits (AREA)
- For Increasing The Reliability Of Semiconductor Memories (AREA)
Abstract
본 발명은 램 테스트를 위한 최적 데이타 발생기에 관한 것으로, 램(15) 위치를 지정하기 위한 번지를 발생시켜 출력하는 번지 발생기(11)와, 멀티플렉서(41)와 시프트 레지스터(42)로 이루어져 있어 데이타 백그라운드를 발생시켜 출력하는 데이타 발생기(40)와; 램(15)으로부터 읽어낸 데이타를 기대하는 패턴과 비교하는 데이타 비교기(13)와; 램 비스트(10)의 전체 흐름을 제어하는 비스트 제어기(14)와; 데이타를 쓸 수도 있고 읽어낼 수도 있는 기능을 갖는 램(15)으로 구성되었으며, 램을 테스트할 때 자체에 내장된 테스트 회로가 차지하는 면적 문제(Area Overhead)와 처리 시간 문제(Time Overhead) 및 데이타 크기에 의존된 회로 구성 문제를 해결하기 위한 램 테스트를 위한 최적 데이타 발생기에 관한 것이다.The present invention relates to an optimal data generator for RAM test, comprising a address generator (11) for generating and outputting a address for designating a RAM (15) position, a multiplexer (41) and a shift register (42). A data generator 40 generating and outputting a background; A data comparator 13 for comparing the data read from the RAM 15 with the expected pattern; A bee controller 14 for controlling the entire flow of the ram bee 10; It consists of RAM (15) that has the ability to write and read data.The area problem, time overhead and data size occupied by its own test circuit when testing RAM. An optimal data generator for RAM testing to solve circuit configuration problems.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.
제5도는 본 발명의 실시예에 따른 시프트 레지스터를 이용한 데이타 발생기의 블럭도이고, 제7도는 본 발명의 실시예에 따른 멀티플렉서를 공유한 데이타 발생기의 블럭도이다.5 is a block diagram of a data generator using a shift register according to an embodiment of the present invention, and FIG. 7 is a block diagram of a data generator sharing a multiplexer according to an embodiment of the present invention.
Claims (3)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950008990A KR0143131B1 (en) | 1995-04-17 | 1995-04-17 | Ram test circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950008990A KR0143131B1 (en) | 1995-04-17 | 1995-04-17 | Ram test circuit |
Publications (2)
Publication Number | Publication Date |
---|---|
KR960038621A true KR960038621A (en) | 1996-11-21 |
KR0143131B1 KR0143131B1 (en) | 1998-08-17 |
Family
ID=19412337
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019950008990A KR0143131B1 (en) | 1995-04-17 | 1995-04-17 | Ram test circuit |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR0143131B1 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100406556B1 (en) * | 2001-06-30 | 2003-11-22 | 주식회사 하이닉스반도체 | Memory device |
-
1995
- 1995-04-17 KR KR1019950008990A patent/KR0143131B1/en not_active IP Right Cessation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100406556B1 (en) * | 2001-06-30 | 2003-11-22 | 주식회사 하이닉스반도체 | Memory device |
Also Published As
Publication number | Publication date |
---|---|
KR0143131B1 (en) | 1998-08-17 |
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