KR960037742A - 재료 표면의 개질방법 및 이에 의해 표면개질된 재료 - Google Patents

재료 표면의 개질방법 및 이에 의해 표면개질된 재료 Download PDF

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KR960037742A
KR960037742A KR1019960011994A KR19960011994A KR960037742A KR 960037742 A KR960037742 A KR 960037742A KR 1019960011994 A KR1019960011994 A KR 1019960011994A KR 19960011994 A KR19960011994 A KR 19960011994A KR 960037742 A KR960037742 A KR 960037742A
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energy
reactive gas
polymer
particles
ionic particles
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정형진
고석근
최원국
한경섭
감직상
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박원훈
한국과학기술연구원
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Abstract

본 발명은 진공 상태하에, 반응성 가스를 고분자, 세라믹, ITO 또는 유리 표면에 직접 불어 넣어주면서, 에너지를 가진 이온 입자를 고분자, 세라믹, ITO 또는 유리 표면에 조사하여 그 표면의 접촉각을 감소시켜 고분자, 세라믹, ITO 또는 유리 표면을 개질하는 방법에 관한 것이다. 본 발명에 따른 표면 개질 방법은 재료 표면의 접촉각을 크게 감소시킴으로서 수성 물감의 번집 증가, 다른 물질과의 접착력 증가 및 빛의 산란 방지 등을 가져올 수 있어 고분자, 세라믹, ITO 또는 유리의 응용 분야에서 널리 이용될 수 있다.

Description

재료 표면의 개질방법 및 이에 의해 표면개질된 재료
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명에 따른 고분자 표면의 개질방법에 이용하는 표면처리 장치의 개략도, 제2도는 시편 1-1 및 1-2의 실시예 1-1)에 따른 접촉각 측정결과를 도시한 그래프, 제3도는 시편 1-3 내지 1-10의 실시예 1-1)에 따른 접촉각 측정결과를 도시한 그래프, 제4도는 시편 1-5(이온 조사량=1016ions/㎠)에 대한 실시예 1-2)의 접촉각 감소 검증 시험 결과를 도시한 그래프, 제5도는 조사하지 않는 대조예와 비교하여 시편 1-5(이온 조사량=1016ions/㎠)의 ESCA 표면 분석 결과를 도시한 그래프(A 조사하지 않은 시편의 C1 분석 결과, B 시편 1-5의 C1 분석결과).

Claims (21)

  1. 진공 상태하에, 반응성 가스를 고분자 표면에 직접 불어 넣어주면서, 에너지를 가진 이온 입자를 고분자 표면에 조사하여 고분자 표면의 접촉각을 감소시키거나 접착력을 증대시키는 것으로 이루어지는 고분자 표면의 개질방법.
  2. 제1항에 있어서, 반응성 가스가 산소, 질소, 수소, 암모니아, 일산화탄소, 및 이들의 혼합 가스 중에서 선택되는 개질방법.
  3. 제1항에 있어서, 반응성 가스의 주입량이 1∼8㎖/min인 개질방법.
  4. 제1항에 있어서, 상기 고분자가 폴리카보네이트, 폴리메틸메타아크릴레이트, 폴리이미드, 테프론, 폴리비닐리덴플루오라이드, 폴리에틸렌테레프탈레이트, 폴리에틸렌, 및 실리콘 러버 중에서 선택되는 개질방법.
  5. 제1항에 있어서, 에너지를 가진 이온 입자가 아르곤, 산소, 공기, 크립톤 및 이들의 혼합물 중에서 선택되는 개질방법.
  6. 제1항에 있어서, 에너지를 가진 이온 입자의 에너지가 0.5∼2.5KeV인 개질방법.
  7. 제1항에 있어서, 에너지를 가진 이온 입자의 조사량이 1014∼5×1017ions/㎠인 개질방법.
  8. 제1항에 있어서, 에너지를 가진 이온 입자를 고분자 표면에 조사할 때, 진공도에 따라 그 조사 거리가 5×10-3∼1×10-6torr의 고질공에서는 25∼55㎝이고, 10-6torr이상의 초고진공에서는 55㎝ 이상이며, 5 ×10-3torr 이하의 저진공에서는 25㎝ 이하인 개질방법.
  9. 진공상태하에, 반응성 가스를 고분자 표면에 직접 불어 넣어주면서, 에너지를 가진 이온 입자를 고분자 표면에 조사하여 고분자 표면의 접촉각이 감소되거나 접착력이 중대된 고분자 재료.
  10. 진공상태하에, 반응성 가스를 세라믹 표면에 직접 불어 넣어주면서, 에너지를 가진 이온 입자를 상기 세라믹 표면에 조사하는 것을 이루어지는 세라믹 표면의 개질방법.
  11. 제10항에 있어서, 반응성 가스가 산소, 질소, 수소, 암모니아, 일산화탄소, 및 이들의 혼합 가스 중에서 선택되며, 모재인 세라믹과 다른 세라믹 표면을 형성시킬 수 있도록 선택되는 개질방법,
  12. 제10항에 있어서, 반응성 가스의 주입량이 1∼8㎖/min인 개질방법.
  13. 제10항에 있어서, 에너지를 가진 이온 입자가 아르곤, 산소, 공기, 크립톤 및 이들의 혼합물 중에서 선택되는 개질방법,
  14. 제10항에 있어서, 에너지를 가진 이온 입자의 에너지가 0.5∼2.5KeV인 개질방법.
  15. 제10항에 있어서, 에너지를 가진 이온 입자의 조사량이 1014∼5 ×1017ions/㎠인 개질방법.
  16. 진공상태하에, 반응성 가스를 ITO 또는 유리 표면에 직접 불어 넣어주면서, 에너지를 가진 이온 입자를 상기 ITO 또는 유리 표면에 조사하는 것으로 이루어지는 ITO 또는 유리 표면의 개질방법.
  17. 제16항에 있어서, 반응성 가스가 산소, 질소, 수소, 암모니아, 일산화탄소, 및 이들의 혼합 가스 중에서 선택되는 개질방법.
  18. 제16항에 있어서, 반응성 가스의 주입량이 1∼8㎖/min인 개질방법,.
  19. 제16항에 있어서, 에너지를 가진 이온 입자가 아르곤, 산소, 공기, 크립톤 및 이들의 혼합물 중에서 선택되는 개질방법.
  20. 제16항에 있어서, 에너지를 가진 이온 입자의 에너지가 0.5∼2.5KeV인 개질방법.
  21. 제16항에 있어서, 에너지를 가진 이온 입자의 조사량이 1014∼5 ×1017ions/㎠인 개질방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개되는 것임.
KR1019960011994A 1995-04-19 1996-04-19 재료표면의개질방법및이에의해표면개질된재료 KR100316586B1 (ko)

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US08/835,645 US5965629A (en) 1996-04-19 1997-04-11 Process for modifying surfaces of materials, and materials having surfaces modified thereby
US09/149,442 US6300641B1 (en) 1996-04-19 1998-09-09 Process for modifying surfaces of materials, and materials having surfaces modified thereby

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Application Number Priority Date Filing Date Title
KR19950009194 1995-04-19
KR9194/1995 1995-04-19
KR1019950009194 1995-04-19
KR17514/1995 1995-06-26
KR1019950017514 1995-06-26
KR19950017514 1995-06-26
KR1019960002456 1996-02-01
KR2456/1996 1996-02-01
KR19960002456 1996-02-01

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KR1019960011994A KR100316586B1 (ko) 1995-04-19 1996-04-19 재료표면의개질방법및이에의해표면개질된재료
KR1019960011995A KR100324619B1 (ko) 1995-04-19 1996-04-19 금속 표면의 개질방법 및 이에 의해 표면개질된금속

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KR100371398B1 (ko) * 1998-12-08 2003-05-12 주식회사 엘지화학 폴리올레핀블렌드로제조된통기성필름과그의제조방법및2차전지의격리막
KR100418379B1 (ko) * 2001-06-05 2004-02-11 학교법인고려중앙학원 인듐주석산화막 표면개질을 이용한 박막 광전지 및 그 제조방법

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CN1181787A (zh) 1998-05-13
BR9608228A (pt) 1998-12-29
KR960039134A (ko) 1996-11-21
EP0822995A1 (en) 1998-02-11
KR100288500B1 (ko) 2001-05-02
KR100316586B1 (ko) 2002-02-28
EP0822995B1 (en) 2001-11-21
CN1107124C (zh) 2003-04-30
DE69617221D1 (de) 2002-01-03
US5783641A (en) 1998-07-21
ES2164873T3 (es) 2002-03-01
KR960039135A (ko) 1996-11-21
WO1996033293A1 (en) 1996-10-24
AU4956996A (en) 1996-11-07
KR100324619B1 (ko) 2002-10-12
JPH11501696A (ja) 1999-02-09
JP3213005B2 (ja) 2001-09-25

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