KR960034488A - 고온 저항을 개선시키기 위한 티타늄 질화물 층의 처리방법 - Google Patents
고온 저항을 개선시키기 위한 티타늄 질화물 층의 처리방법 Download PDFInfo
- Publication number
- KR960034488A KR960034488A KR1019960006596A KR19960006596A KR960034488A KR 960034488 A KR960034488 A KR 960034488A KR 1019960006596 A KR1019960006596 A KR 1019960006596A KR 19960006596 A KR19960006596 A KR 19960006596A KR 960034488 A KR960034488 A KR 960034488A
- Authority
- KR
- South Korea
- Prior art keywords
- titanium nitride
- aluminum
- layer
- temperature
- nitride layer
- Prior art date
Links
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 title claims abstract 14
- 238000000034 method Methods 0.000 title claims abstract 12
- 229910052782 aluminium Inorganic materials 0.000 claims abstract 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract 7
- 238000010438 heat treatment Methods 0.000 claims abstract 2
- 239000012299 nitrogen atmosphere Substances 0.000 claims abstract 2
- 239000000126 substance Substances 0.000 claims abstract 2
- 238000000137 annealing Methods 0.000 claims 6
- 229910000838 Al alloy Inorganic materials 0.000 claims 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 3
- 238000000151 deposition Methods 0.000 claims 3
- 229910052710 silicon Inorganic materials 0.000 claims 3
- 239000010703 silicon Substances 0.000 claims 3
- 239000011248 coating agent Substances 0.000 claims 2
- 238000000576 coating method Methods 0.000 claims 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 1
- 229910052751 metal Inorganic materials 0.000 claims 1
- 239000002184 metal Substances 0.000 claims 1
- 239000000203 mixture Substances 0.000 claims 1
- 125000002524 organometallic group Chemical group 0.000 claims 1
- 239000000758 substrate Substances 0.000 claims 1
- 239000010936 titanium Substances 0.000 claims 1
- 229910052719 titanium Inorganic materials 0.000 claims 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract 1
- 230000004888 barrier function Effects 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 239000001301 oxygen Substances 0.000 abstract 1
- 229910052760 oxygen Inorganic materials 0.000 abstract 1
- 230000000087 stabilizing effect Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76853—Barrier, adhesion or liner layers characterized by particular after-treatment steps
- H01L21/76855—After-treatment introducing at least one additional element into the layer
- H01L21/76856—After-treatment introducing at least one additional element into the layer by treatment in plasmas or gaseous environments, e.g. nitriding a refractory metal liner
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Physical Vapour Deposition (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
본 발명은 체적비로 약 3%내지 15%의 산소를 함유하고 있는 질소 분위기내에서 티타늄 질화물 피막을 가열 시키는 것을 포함하는 알루미늄 고온 후중착에 견딜 수 있도록 화학 진공중착된 티타늄 질화물 층을 안정시키는 방법에 관한 것이다. 알루미늄 처리된 티타늄 질화물 피막상으로 중착될 때, 상기 티타늄 질화물의 방벽재료들은 적어도 약 575℃의 온도에 이르기까지 견딜 수 있다.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
Claims (10)
- 약 400℃이상의 온도에 대하여 안정화될 수 있는 화학 진공증착된 티타늄 질화물 층을 처리하는 방법으로서, 유기-금속 티타늄 혼합물로부터 티타늄 질화물 피막을 증착하는 단계와, 그리고 체적비로 약 3% 내지 15%의 산소를 함유하고 있는 질소 분위기내에서 상기 티타늄 질화물 피막을 어니일링시키는 단계를 포함하고 있는 방법.
- 제1항에 있어서, 상기 어니일링 단계가 금속어니일링 챔버내에서 실행되어지는 방법.
- 제1항에 있어서, 상기 어니일링 단계가 약 450℃ 내지 800℃의 온도에서 실행되는 방법.
- 제1항에 있어서, 상기 어니일링 단계중에 압력이 적어도 1.33322*102pa(1 Torr) 이상인 방법.
- 제1항에 있어서, 상기 어니일링 단계 후에 알루미늄 층이나 알루미늄 합금층이 상기 어니일링 티타늄 질화물층 상으로 증착되는 단계를 더 포함하는 방법.
- 제1항에 있어서, 상기 화학 진공증착된 티타늄 질화물이 실리콘 회로기판 상으로 증착되는 방법.
- 제7항에 있어서, 상기 화학 진공증착된 티타늄 질화물 층이 실리콘 회로기판 상으로 증착되는 방법.
- 제7항에 있어서, 상기 실리콘 회로기판, 상기 화학 진공증착된 티타늄 질화물, 및 상기 알루미늄 층이나 알루미늄 합금층을 알루미늄 유동온도 이상으로 가열시키는 단계를 더 포함하고 있는 방법.
- 제8항에 있어서, 상기 알루미늄 층이나 알루미늄 합금층이 550℃이상의 온도로 가열되는 방법.
- 제9항에 있어서, 상기 알루미늄 층이나 알루미늄 합금층이 575℃이상의 온도로 가열되는 방법.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US40308595A | 1995-03-13 | 1995-03-13 | |
US08/403,085 | 1995-03-13 |
Publications (1)
Publication Number | Publication Date |
---|---|
KR960034488A true KR960034488A (ko) | 1996-10-22 |
Family
ID=23594422
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019960006596A KR960034488A (ko) | 1995-03-13 | 1996-03-13 | 고온 저항을 개선시키기 위한 티타늄 질화물 층의 처리방법 |
Country Status (4)
Country | Link |
---|---|
US (1) | US5943600A (ko) |
EP (1) | EP0732731A3 (ko) |
JP (1) | JPH08330256A (ko) |
KR (1) | KR960034488A (ko) |
Families Citing this family (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5877087A (en) | 1995-11-21 | 1999-03-02 | Applied Materials, Inc. | Low temperature integrated metallization process and apparatus |
GB2319533B (en) * | 1996-11-22 | 2001-06-06 | Trikon Equip Ltd | Methods of forming a barrier layer |
US5789028A (en) * | 1997-03-04 | 1998-08-04 | Lsi Logic Corporation | Method for eliminating peeling at end of semiconductor substrate in metal organic chemical vapor deposition of titanium nitride |
KR100275728B1 (ko) * | 1998-02-24 | 2001-01-15 | 윤종용 | 반도체장치의 장벽 금속막의 제조방법 및 이를 이용한 반도체장치의 금속배선막의 제조방법 |
TW504941B (en) * | 1999-07-23 | 2002-10-01 | Semiconductor Energy Lab | Method of fabricating an EL display device, and apparatus for forming a thin film |
US6303480B1 (en) | 1999-09-13 | 2001-10-16 | Applied Materials, Inc. | Silicon layer to improve plug filling by CVD |
JP4547744B2 (ja) * | 1999-11-17 | 2010-09-22 | 東京エレクトロン株式会社 | プリコート膜の形成方法、成膜装置のアイドリング方法、載置台構造及び成膜装置 |
KR100709801B1 (ko) * | 1999-11-17 | 2007-04-23 | 동경 엘렉트론 주식회사 | 프리코트막의 형성방법, 성막장치의 아이들링 방법,재치대 구조, 성막장치 및 성막방법 |
TW490714B (en) | 1999-12-27 | 2002-06-11 | Semiconductor Energy Lab | Film formation apparatus and method for forming a film |
US6730598B1 (en) * | 1999-12-30 | 2004-05-04 | Intel Corporation | Integration of annealing capability into metal deposition or CMP tool |
US7037830B1 (en) * | 2000-02-16 | 2006-05-02 | Novellus Systems, Inc. | PVD deposition process for enhanced properties of metal films |
US20020011205A1 (en) * | 2000-05-02 | 2002-01-31 | Shunpei Yamazaki | Film-forming apparatus, method of cleaning the same, and method of manufacturing a light-emitting device |
US7517551B2 (en) * | 2000-05-12 | 2009-04-14 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing a light-emitting device |
US6423201B1 (en) | 2000-08-23 | 2002-07-23 | Applied Materials, Inc. | Method of improving the adhesion of copper |
SG113448A1 (en) * | 2002-02-25 | 2005-08-29 | Semiconductor Energy Lab | Fabrication system and a fabrication method of a light emitting device |
US7309269B2 (en) | 2002-04-15 | 2007-12-18 | Semiconductor Energy Laboratory Co., Ltd. | Method of fabricating light-emitting device and apparatus for manufacturing light-emitting device |
US20030221620A1 (en) * | 2002-06-03 | 2003-12-04 | Semiconductor Energy Laboratory Co., Ltd. | Vapor deposition device |
AU2003263609A1 (en) | 2002-09-20 | 2004-04-08 | Semiconductor Energy Laboratory Co., Ltd. | Fabrication system and manufacturing method of light emitting device |
JP2007165788A (ja) * | 2005-12-16 | 2007-06-28 | Tokyo Electron Ltd | 金属系膜の脱炭素処理方法、成膜方法および半導体装置の製造方法 |
US8652890B2 (en) * | 2012-02-29 | 2014-02-18 | GlobalFoundries, Inc. | Methods for fabricating integrated circuits with narrow, metal filled openings |
Family Cites Families (16)
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EP0209654B1 (en) * | 1985-05-13 | 1994-12-14 | Kabushiki Kaisha Toshiba | Semiconductor device having wiring electrodes |
US4951601A (en) * | 1986-12-19 | 1990-08-28 | Applied Materials, Inc. | Multi-chamber integrated process system |
US4784973A (en) * | 1987-08-24 | 1988-11-15 | Inmos Corporation | Semiconductor contact silicide/nitride process with control for silicide thickness |
JPH04280425A (ja) * | 1991-03-07 | 1992-10-06 | Sony Corp | 配線形成方法 |
JPH056865A (ja) * | 1991-06-27 | 1993-01-14 | Sanyo Electric Co Ltd | 半導体装置の製造方法 |
US5278100A (en) * | 1991-11-08 | 1994-01-11 | Micron Technology, Inc. | Chemical vapor deposition technique for depositing titanium silicide on semiconductor wafers |
EP0545602A1 (en) * | 1991-11-26 | 1993-06-09 | STMicroelectronics, Inc. | Method for forming barrier metal layers |
US5312774A (en) * | 1991-12-05 | 1994-05-17 | Sharp Kabushiki Kaisha | Method for manufacturing a semiconductor device comprising titanium |
US5275715A (en) * | 1992-01-23 | 1994-01-04 | Micron Technology Inc. | Electroplating process for enhancing the conformality of titanium and titanium nitride films in the manufacture of integrated circuits and structures produced thereby |
US5252518A (en) * | 1992-03-03 | 1993-10-12 | Micron Technology, Inc. | Method for forming a mixed phase TiN/TiSi film for semiconductor manufacture using metal organometallic precursors and organic silane |
US5723382A (en) * | 1992-06-12 | 1998-03-03 | Sandhu; Gurtej S. | Method of making a low-resistance contact to silicon having a titanium silicide interface, an amorphous titanium nitride barrier layer and a conductive plug |
US5371042A (en) * | 1992-06-16 | 1994-12-06 | Applied Materials, Inc. | Method of filling contacts in semiconductor devices |
KR960010056B1 (ko) * | 1992-12-10 | 1996-07-25 | 삼성전자 주식회사 | 반도체장치 및 그 제조 방법 |
US5378660A (en) * | 1993-02-12 | 1995-01-03 | Applied Materials, Inc. | Barrier layers and aluminum contacts |
US5246881A (en) * | 1993-04-14 | 1993-09-21 | Micron Semiconductor, Inc. | Low-pressure chemical vapor deposition process for depositing high-density, highly-conformal, titanium nitride films of low bulk resistivity |
US5612558A (en) * | 1995-11-15 | 1997-03-18 | Micron Technology, Inc. | Hemispherical grained silicon on refractory metal nitride |
-
1996
- 1996-03-06 EP EP96103468A patent/EP0732731A3/en not_active Withdrawn
- 1996-03-13 KR KR1019960006596A patent/KR960034488A/ko not_active Application Discontinuation
- 1996-03-13 JP JP8084597A patent/JPH08330256A/ja not_active Withdrawn
-
1997
- 1997-03-31 US US08/840,439 patent/US5943600A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
EP0732731A2 (en) | 1996-09-18 |
US5943600A (en) | 1999-08-24 |
JPH08330256A (ja) | 1996-12-13 |
EP0732731A3 (en) | 1997-10-08 |
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