KR960026304A - Pattern formation method of semiconductor device - Google Patents
Pattern formation method of semiconductor device Download PDFInfo
- Publication number
- KR960026304A KR960026304A KR1019940040316A KR19940040316A KR960026304A KR 960026304 A KR960026304 A KR 960026304A KR 1019940040316 A KR1019940040316 A KR 1019940040316A KR 19940040316 A KR19940040316 A KR 19940040316A KR 960026304 A KR960026304 A KR 960026304A
- Authority
- KR
- South Korea
- Prior art keywords
- layer
- thin film
- etching
- photoresist pattern
- pattern
- Prior art date
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- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
본 발명은 반도체 소자 제조 공정에서 웨이퍼 기판에 형성하는 미세패턴 형성 방법에 관한 것으로서, 식각이 이루어질 피식각층 상부에 포토 레지스트 패턴을 종래보다 얇게 형성하고, 식각장벽막인 포토 레지스트 패턴을 단지 이미지 형성기능만 부여하고, 대신에 식각장벽용 박막층을 도포하고 패턴을 리프트-오프 방법으로 전사시킴으로써 종래의 포토 레지스트의 두께를 줄일 수가 있으며, 결과적으로 패턴의 해상도 및 촛점여유도가 향상되는 장점이 있다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of forming a fine pattern formed on a wafer substrate in a semiconductor device manufacturing process, wherein the photoresist pattern is formed thinner on the etching target layer to be etched than before, and the photoresist pattern as an etch barrier film is merely an image forming function. The thickness of the conventional photoresist can be reduced by applying only the thin film layer for the etch barrier and transferring the pattern by the lift-off method, and as a result, the resolution and the focus margin of the pattern are improved.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.
제2도 내지 제5도는 본 발명에 따른 미세 패턴 형성방법의 공정을 순차적으로 나타내는 단면도.2 to 5 are cross-sectional views sequentially showing a process of the method for forming a fine pattern according to the present invention.
Claims (8)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019940040316A KR960026304A (en) | 1994-12-31 | 1994-12-31 | Pattern formation method of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019940040316A KR960026304A (en) | 1994-12-31 | 1994-12-31 | Pattern formation method of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
KR960026304A true KR960026304A (en) | 1996-07-22 |
Family
ID=66647641
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019940040316A KR960026304A (en) | 1994-12-31 | 1994-12-31 | Pattern formation method of semiconductor device |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR960026304A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100520180B1 (en) * | 1999-08-31 | 2005-10-10 | 주식회사 하이닉스반도체 | Additives for improving post exposure delay stability of photoresist |
-
1994
- 1994-12-31 KR KR1019940040316A patent/KR960026304A/en not_active Application Discontinuation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100520180B1 (en) * | 1999-08-31 | 2005-10-10 | 주식회사 하이닉스반도체 | Additives for improving post exposure delay stability of photoresist |
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Legal Events
Date | Code | Title | Description |
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A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
E601 | Decision to refuse application |