KR960026125A - Diamond-like thin film production apparatus and its manufacturing method - Google Patents

Diamond-like thin film production apparatus and its manufacturing method Download PDF

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KR960026125A
KR960026125A KR1019940040617A KR19940040617A KR960026125A KR 960026125 A KR960026125 A KR 960026125A KR 1019940040617 A KR1019940040617 A KR 1019940040617A KR 19940040617 A KR19940040617 A KR 19940040617A KR 960026125 A KR960026125 A KR 960026125A
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diamond
thin film
substrate
vacuum chamber
target
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최정옥
김한
정효수
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김준성
사단법인 고등기술연구원 연구조합
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    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24Vacuum evaporation
    • C23C14/28Vacuum evaporation by wave energy or particle radiation
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0605Carbon
    • C23C14/0611Diamond

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  • Engineering & Computer Science (AREA)
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Abstract

펄스 레이저 및 이온건을 이용한 다이아몬드상 박막 제조 장치 및 방법이 기술되어 있다. 본 발명의 다이아몬드상 박막 제조 장치는 진공조(12) 내의 일측부에 설치된 회전 가능한 타겟홀더(4)와; 상기 타겟홀더에 부착된 타겟(3)과; 고에너지의 레이저 빔을 타겟(3)에 전달하여 플룸(5)을 형성시키기 위해 상기 진공조(12) 외부에 설치된 펄스 레이저(1)와; 상기 레이저 빔을 통과시켜 타겟(3) 표면 상에 포커싱하기 위한 광학계(2)와; 상기 진공조(12)의 일측부에 설치된 기판홀더(10)와; 상기 기판홀더(10)에 부착된 기판(9)과; 상기 진공조(12) 내에 설치되고 이온을 발생시키기 위한 이온건(6)과; 상기 이온건(6)에 이온화 가스를 공급하기 위해 상기 이온건에 연결되어 있는 이온빔 형성용 가스 주입부(8) 구성되어 있다.An apparatus and method for producing a diamond-like thin film using a pulse laser and an ion gun are described. Diamond-like thin film manufacturing apparatus of the present invention comprises a rotatable target holder (4) installed on one side in the vacuum chamber (12); A target (3) attached to the target holder; A pulsed laser (1) provided outside the vacuum chamber (12) for delivering a high energy laser beam to the target (3) to form a plume (5); An optical system (2) for passing the laser beam and focusing on a target (3) surface; A substrate holder 10 installed at one side of the vacuum chamber 12; A substrate 9 attached to the substrate holder 10; An ion gun (6) installed in the vacuum chamber (12) for generating ions; An ion beam forming gas injection unit 8 connected to the ion gun for supplying ionization gas to the ion gun 6 is configured.

본 발명의 다이아몬드상 박막 장치에 따르면, 상온에서 다이아몬드 결합상의 함량이 다결정 다이아몬드 박막에 접근하는 다이아몬드상 박막의 제조가 가능하다. 또한, 본 발명의 장치에 따라 제조되는 다이아몬드상의 박막은 그 전자 방출 특성 및 기계적 특성이 현저히 개선된다. 아울러, 본 발명에 의해 제조된 다이아몬드상 박막은 저가의 전계방출형 표시소자용 에미터를 제조하는 데에도 응용이 가능하다.According to the diamond-like thin film device of the present invention, it is possible to produce a diamond-like thin film in which the content of the diamond bonding phase approaches the polycrystalline diamond thin film at room temperature. In addition, the diamond-like thin film produced according to the device of the present invention has significantly improved its electron emission characteristics and mechanical properties. In addition, the diamond-like thin film produced by the present invention can be applied to the production of emitters for low-cost field emission display devices.

Description

다이아몬드상 박막 제조 장치 및 그 제조방법Diamond-like thin film production apparatus and its manufacturing method

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제1도는 본 발명의 이온건과 펄스레이저를 이용한 다이아몬드상 박막을 제조하기 위한 중착장치.1 is a deposition apparatus for producing a diamond-like thin film using the ion gun and the pulse laser of the present invention.

Claims (8)

진공조(12) 내의 일측부에 설치된 회전 가능한 타겟홀더(4)와; 상기 타겟홀더에 부착된 타겟(3)과; 고에너지의 레이저 빔을 타겟(3)에 전달하여 플룸(5)을 형성시키기 위해 상기 진공조(12) 외부에 설치된 펄스 레이저(1)와; 상기 레이저 빔을 통과시켜 타겟(3) 표면 상에 포커싱하기 위한 광학계(2)와; 상기 진공조(12)의 일측부에 설치된 기판홀더(10)와; 상기 기판홀더(10)에 부착된 기판(9)과; 상기 진공조(12) 내에 설치되고 이온을 발생시키기 위한 이온건(6)과; 상기 이온건(6)에 이온화 가스를 공급하기 우해 상기 이온건에 연결되어 있는 이온빔 형성용 가스 주입부(8)를 포함하고, 상기 형성된 플룸(5)의 일부는 상기 기판쪽으로 향하여 기판 표면에 충돌한 후 응고되어 다이아몬드상 박막을 형성하고, 상기 이온빔 형성용 가스 주입부에 이온화 가스를 주입하고, 상기 이온건은 이온 빔을 형성하여 기판쪽으로 가속시키고, 상기 가속된 이온 빔을 상기 다이아몬드상 박막에 충돌하여, 상기 기판(8)에 형성된 다이아몬드상 박막의 다이아몬드상 함량이 다결정 다이아몬드 박막에 접근하는 것을 특징으로 하는 다이아몬드상 박막 제조 장치.A rotatable target holder 4 provided at one side in the vacuum chamber 12; A target (3) attached to the target holder; A pulsed laser (1) provided outside the vacuum chamber (12) for delivering a high energy laser beam to the target (3) to form a plume (5); An optical system (2) for passing the laser beam and focusing on a target (3) surface; A substrate holder 10 installed at one side of the vacuum chamber 12; A substrate 9 attached to the substrate holder 10; An ion gun (6) installed in the vacuum chamber (12) for generating ions; An ion beam forming gas injection unit (8) connected to the ion gun for supplying ionization gas to the ion gun (6), wherein a part of the formed plume (5) is directed toward the substrate and impinges on the substrate surface And then solidify to form a diamond-like thin film, inject an ionizing gas into the ion beam forming gas injector, and the ion gun forms an ion beam to accelerate toward the substrate, and accelerates the accelerated ion beam to the diamond-like thin film. And the diamond phase content of the diamond thin film formed on the substrate 8 approaches the polycrystalline diamond thin film. 제1항에 있어서, 상기 이온빔 형성용 이온화 가스는 불활성 가스인 것을 특징으로 하는 다이아몬드상 박막 제조 장치.The diamond-like thin film production apparatus according to claim 1, wherein the ionizing gas for ion beam formation is an inert gas. 제2항에 있어서, 상기 이온빔 형성용 가스 주입부는 상기 불활성 가스와 불순물을 함께 주입시켜 상기 이온건에서 불순물이 혼합된 혼합 가스 이온 빔이 출력되는 것을 특징으로 하는 다이아몬드상 박막 제조 장치.The diamond-like thin film manufacturing apparatus of claim 2, wherein the ion beam forming gas injection unit injects the inert gas and impurities together to output a mixed gas ion beam mixed with impurities from the ion gun. 제3항에 있어서, 상기 혼합 가스는 수소가 함유된 혼합 가스인 것을 특징으로 하는 다이아몬드상 박막 제조 장치.The diamond-like thin film production apparatus according to claim 3, wherein the mixed gas is a mixed gas containing hydrogen. 제3항에 있어서, 상기 혼합 가스는 질소가 함유된 혼합 가스인 것을 특징으로 하는 다이아몬드상 박막 제조 장치.The diamond-like thin film production apparatus according to claim 3, wherein the mixed gas is a mixed gas containing nitrogen. 제1항 내지 제5항의 다이아몬드상 박막 제조 장치에 의하여 제조된 다이아몬드상 박막.Diamond-like thin film manufactured by the diamond-like thin film manufacturing apparatus of claim 1. 제1항 내지 제5항의 다이아몬드상 박막 제조 장치에 의하여 제조된 다이아몬드상 박막을 이용하여 제조된 필드 에미터.A field emitter manufactured by using a diamond-like thin film manufactured by the diamond-like thin film manufacturing apparatus of claim 1. 진공조(12) 내의 일측부에 회전 가능한 타겟홀더(4)를 설치하고 상기 카겟홀더에 타겟(3)을 부착하는 단계와; 상기 진공조(12) 일측부 외부에 펄스 레이스(1)를 설치하는 단계와; 상기 펄스 레이저에서 발생된 고에너지 빔을 통과시켜 타겟(3) 표면 상에 포커싱하기 위한 광학계(2)를 설치하는 단계와; 상기 진공조(12)의 일측부에 기판홀더(10)를 설치하는 단계와; 상기 기판홀더(10)에 기판(9)을 설치하는 단계와; 상기 진공조(12) 내에 이온 빔을 발생시키기 위한 이온건(6)을 설치하는 단계와; 상기 이온건(6)에 이온화 가스를 주입하기 위해 상기 진공조(12)의 일측부에 상기 이온건에 연결되는 이온빔 형성용 가스 주입부(8)를 설치하는 단계와; 상기 고에너지의 레이저 빔이 타겟(3)에 에너지를 전달하여 플룸(5)을 형성시키는 단계와; 상기 형성된 플룸(5)의 일부가 상기 기판쪽으로 향하여 기판 표면에 충돌한 후 응고되어 다이아몬드상 박막을 형성하는 단계와; 상기 이온빔 형성용 가스 주입부에 이온빔 형성용 가스를 송급하고, 상기 이온건은 이온빔을 형성하여 기판쪽으로 가속되어, 상기 기판 상의 박막에 충돌하여 상기 기판(8)에 형성된 다이아몬드상 바막의 다이아몬드상 함량이 다결정 다이아몬드 박막에 접근하는 것을 특징으로 하는 다이아몬드상 박막 제조 방법.Installing a rotatable target holder (4) at one side in the vacuum chamber (12) and attaching the target (3) to the carcass holder; Installing a pulse race (1) outside one side of the vacuum chamber (12); Installing an optical system (2) for focusing on the target (3) surface by passing the high energy beam generated by the pulsed laser; Installing a substrate holder (10) on one side of the vacuum chamber (12); Installing a substrate (9) in the substrate holder (10); Installing an ion gun (6) for generating an ion beam in the vacuum chamber (12); Installing an ion beam forming gas injection unit (8) connected to the ion gun at one side of the vacuum chamber (12) for injecting ionization gas into the ion gun (6); The high energy laser beam transferring energy to a target (3) to form a plume (5); A part of the formed plume (5) collides with the substrate surface toward the substrate and then solidifies to form a diamond-like thin film; The ion beam forming gas is supplied to the ion beam forming gas injecting unit, and the ion gun forms an ion beam, accelerates toward the substrate, collides with a thin film on the substrate, and the diamond phase content of the diamond bar film formed on the substrate 8. A method for producing a diamond-like thin film, comprising approaching this polycrystalline diamond thin film. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019940040617A 1994-12-31 1994-12-31 Apparatus and method for fabricating diamond thin film KR0153567B1 (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100324501B1 (en) * 2000-02-25 2002-02-16 김종일 Carbon nitride thin film, bulk formation equipment and method
KR100545719B1 (en) * 1998-09-25 2006-03-31 학교법인연세대학교 Protective coating layer material for AC plasma display panel device

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105789001B (en) * 2016-03-18 2018-05-01 南京瑞派宁信息科技有限公司 The method and apparatus that a kind of ion beam produces
KR102382779B1 (en) * 2020-05-22 2022-04-06 (주)아이네쓰 Thin film depostion apparatus and DLC thin film coating methos using the appartus

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100545719B1 (en) * 1998-09-25 2006-03-31 학교법인연세대학교 Protective coating layer material for AC plasma display panel device
KR100324501B1 (en) * 2000-02-25 2002-02-16 김종일 Carbon nitride thin film, bulk formation equipment and method

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