KR960025707A - Step-up circuits used in active cycles of semiconductor memory devices - Google Patents
Step-up circuits used in active cycles of semiconductor memory devices Download PDFInfo
- Publication number
- KR960025707A KR960025707A KR1019940038503A KR19940038503A KR960025707A KR 960025707 A KR960025707 A KR 960025707A KR 1019940038503 A KR1019940038503 A KR 1019940038503A KR 19940038503 A KR19940038503 A KR 19940038503A KR 960025707 A KR960025707 A KR 960025707A
- Authority
- KR
- South Korea
- Prior art keywords
- control signal
- signal
- boosted voltage
- circuit
- activated
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/4074—Power supply or voltage generation circuits, e.g. bias voltage generators, substrate voltage generators, back-up power, power control circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
- G11C5/145—Applications of charge pumps; Boosted voltage circuits; Clamp circuits therefor
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/408—Address circuits
- G11C11/4085—Word line control circuits, e.g. word line drivers, - boosters, - pull-up, - pull-down, - precharge
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
- G11C5/143—Detection of memory cassette insertion or removal; Continuity checks of supply or ground lines; Detection of supply variations, interruptions or levels ; Switching between alternative supplies
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Dram (AREA)
- Dc-Dc Converters (AREA)
Abstract
본 발명은 반도체 메모리소자의 승압회로에 관한 것으로서, 대기싸이클과 활성싸이클을 결정하는 칩마스터클럭을 입력하여 제1지연기간이 경과한 후에 활성화되며 제1펄스폭을 가진 감지제어신호와 제2지연시간이 경과한 후에 활성화되며 제2펄스폭을 가지는 래치제어신호를 발생하는 제1회로수단과, 상기 감지제어신호와 상기 래치제어신호에 응답하여 현재의 승압전압의 전위상태를 알리는 감지신호를 발생하는 제2회로수단과, 상기 칩마스터클럭에 응답하여 상기 감지신호와 동시에활성화되는 승압전압발생제어신호를 발생하는 제3회로수단과, 상기 감지신호와 상기 승압전압발생제어신호에 따라 상기 대기싸이클 및 활성싸이클에서 각각 동작하는 제1 및 제2승압전압발생회로를 구비한다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a boosting circuit of a semiconductor memory device, wherein a sensing control signal having a first pulse width and a second delay are activated after a first delay period is input by inputting a chip master clock for determining a standby cycle and an active cycle. A first circuit means which is activated after a lapse of time and generates a latch control signal having a second pulse width, and generates a detection signal informing the potential state of the current boosted voltage in response to the sensing control signal and the latch control signal; Second circuit means, a third circuit means for generating a boosted voltage generation control signal that is activated simultaneously with the sense signal in response to the chip master clock, and the standby cycle according to the sensed signal and the boosted voltage generation control signal And first and second step-up voltage generating circuits respectively operating in the active cycle.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.
제6도는 본 발명의 일실시예에 따른 승압회로의 구성을 보여주는 블럭도, 제7도는 제6도에서 사용된 감지제어회로의 회로도, 제8도는 제6도에서 사용된 승압전압감지회로의 회로도.6 is a block diagram showing a configuration of a boost circuit according to an embodiment of the present invention, FIG. 7 is a circuit diagram of a sensing control circuit used in FIG. 6, and FIG. 8 is a circuit diagram of a boost voltage sensing circuit used in FIG. .
Claims (2)
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019940038503A KR0137317B1 (en) | 1994-12-29 | 1994-12-29 | Boost circuit of semiconductor memory device |
TW084113127A TW282544B (en) | 1994-12-29 | 1995-12-09 | |
DE19547796A DE19547796C2 (en) | 1994-12-29 | 1995-12-20 | Boost voltage circuit for a semiconductor memory device |
JP7342653A JP2828942B2 (en) | 1994-12-29 | 1995-12-28 | Semiconductor memory booster circuit |
FR9515663A FR2729020B1 (en) | 1994-12-29 | 1995-12-28 | BOOST CIRCUIT USED IN AN ACTIVE STATE OF A SEMICONDUCTOR MEMORY DEVICE |
CN95120640A CN1045838C (en) | 1994-12-29 | 1995-12-29 | Boosting coltage circuit used in active cycle of a semiconductor memory device |
GB9526716A GB2296593B (en) | 1994-12-29 | 1995-12-29 | Boosting voltage circuit for semiconductor memory device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019940038503A KR0137317B1 (en) | 1994-12-29 | 1994-12-29 | Boost circuit of semiconductor memory device |
Publications (2)
Publication Number | Publication Date |
---|---|
KR960025707A true KR960025707A (en) | 1996-07-20 |
KR0137317B1 KR0137317B1 (en) | 1998-04-29 |
Family
ID=19404725
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019940038503A KR0137317B1 (en) | 1994-12-29 | 1994-12-29 | Boost circuit of semiconductor memory device |
Country Status (7)
Country | Link |
---|---|
JP (1) | JP2828942B2 (en) |
KR (1) | KR0137317B1 (en) |
CN (1) | CN1045838C (en) |
DE (1) | DE19547796C2 (en) |
FR (1) | FR2729020B1 (en) |
GB (1) | GB2296593B (en) |
TW (1) | TW282544B (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100741471B1 (en) * | 2006-09-29 | 2007-07-20 | 삼성전자주식회사 | Latch-free boosting scheme |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR0142963B1 (en) * | 1995-05-17 | 1998-08-17 | 김광호 | Semiconductor memory apparatus having the boosting circuit |
KR0172337B1 (en) * | 1995-11-13 | 1999-03-30 | 김광호 | Semiconductor memory device |
US6094395A (en) * | 1998-03-27 | 2000-07-25 | Infineon Technologies North America Corp. | Arrangement for controlling voltage generators in multi-voltage generator chips such as DRAMs |
CN1299432C (en) * | 2001-10-29 | 2007-02-07 | 旺宏电子股份有限公司 | Drive voltage generator for reducing the effect of work voltage and temperature |
KR100846484B1 (en) | 2002-03-14 | 2008-07-17 | 삼성전자주식회사 | Rotation magnetron in magnetron electrode and method of manufacturing the same and sputtering apparatus with the same |
JP5137545B2 (en) * | 2006-12-25 | 2013-02-06 | 株式会社半導体エネルギー研究所 | Semiconductor device and driving method thereof |
US9502119B2 (en) * | 2014-11-20 | 2016-11-22 | Samsung Electronics Co., Ltd. | Distributed capacitive delay tracking boost-assist circuit |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63153791A (en) * | 1986-12-17 | 1988-06-27 | Mitsubishi Electric Corp | Word line drive signal generating circuit |
US4752699A (en) * | 1986-12-19 | 1988-06-21 | International Business Machines Corp. | On chip multiple voltage generation using a charge pump and plural feedback sense circuits |
KR920010749B1 (en) * | 1989-06-10 | 1992-12-14 | 삼성전자 주식회사 | Circuit for changeing inner voltage in semiconductor memory device |
GB9007791D0 (en) * | 1990-04-06 | 1990-06-06 | Foss Richard C | High voltage boosted wordline supply charge pump and regulator for dram |
US5157278A (en) * | 1990-10-30 | 1992-10-20 | Samsung Electronics Co., Ltd. | Substrate voltage generator for semiconductor device |
US5272676A (en) * | 1990-11-20 | 1993-12-21 | Hitachi, Ltd. | Semiconductor integrated circuit device |
JPH04287418A (en) * | 1991-03-18 | 1992-10-13 | Fujitsu Ltd | Semiconductor integrated circuit |
KR950002015B1 (en) * | 1991-12-23 | 1995-03-08 | 삼성전자주식회사 | Static source voltage generating circuit operated by an oscillator |
JPH05174591A (en) * | 1991-12-25 | 1993-07-13 | Sharp Corp | Charge pumping circuit |
US5329168A (en) * | 1991-12-27 | 1994-07-12 | Nec Corporation | Semiconductor integrated circuit device equipped with substrate biasing system selectively powered from internal and external power sources |
JP3179848B2 (en) * | 1992-03-27 | 2001-06-25 | 三菱電機株式会社 | Semiconductor storage device |
KR950002726B1 (en) * | 1992-03-30 | 1995-03-24 | 삼성전자주식회사 | Charge-pump circuit of substrate voltage generator |
US5337284A (en) * | 1993-01-11 | 1994-08-09 | United Memories, Inc. | High voltage generator having a self-timed clock circuit and charge pump, and a method therefor |
-
1994
- 1994-12-29 KR KR1019940038503A patent/KR0137317B1/en not_active IP Right Cessation
-
1995
- 1995-12-09 TW TW084113127A patent/TW282544B/zh not_active IP Right Cessation
- 1995-12-20 DE DE19547796A patent/DE19547796C2/en not_active Expired - Lifetime
- 1995-12-28 JP JP7342653A patent/JP2828942B2/en not_active Expired - Fee Related
- 1995-12-28 FR FR9515663A patent/FR2729020B1/en not_active Expired - Fee Related
- 1995-12-29 CN CN95120640A patent/CN1045838C/en not_active Expired - Lifetime
- 1995-12-29 GB GB9526716A patent/GB2296593B/en not_active Expired - Lifetime
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100741471B1 (en) * | 2006-09-29 | 2007-07-20 | 삼성전자주식회사 | Latch-free boosting scheme |
Also Published As
Publication number | Publication date |
---|---|
JPH08235859A (en) | 1996-09-13 |
CN1045838C (en) | 1999-10-20 |
FR2729020B1 (en) | 1998-07-10 |
FR2729020A1 (en) | 1996-07-05 |
TW282544B (en) | 1996-08-01 |
GB9526716D0 (en) | 1996-02-28 |
JP2828942B2 (en) | 1998-11-25 |
DE19547796A1 (en) | 1996-07-11 |
DE19547796C2 (en) | 1998-04-16 |
GB2296593B (en) | 1997-07-23 |
GB2296593A (en) | 1996-07-03 |
KR0137317B1 (en) | 1998-04-29 |
CN1127919A (en) | 1996-07-31 |
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