KR960002617A - 반도체 제조동안 실리콘 웨이퍼의 금속 불순물의 감소방법 - Google Patents
반도체 제조동안 실리콘 웨이퍼의 금속 불순물의 감소방법 Download PDFInfo
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- KR960002617A KR960002617A KR1019950017406A KR19950017406A KR960002617A KR 960002617 A KR960002617 A KR 960002617A KR 1019950017406 A KR1019950017406 A KR 1019950017406A KR 19950017406 A KR19950017406 A KR 19950017406A KR 960002617 A KR960002617 A KR 960002617A
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- South Korea
- Prior art keywords
- concentration
- modified
- solution
- dequest
- formulation
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 5
- 239000004065 semiconductor Substances 0.000 title claims abstract description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract 9
- 229910052710 silicon Inorganic materials 0.000 title claims abstract 9
- 239000010703 silicon Substances 0.000 title claims abstract 9
- 239000002184 metal Substances 0.000 title claims abstract 5
- 239000012535 impurity Substances 0.000 title claims abstract 3
- 235000012431 wafers Nutrition 0.000 title 1
- 238000004140 cleaning Methods 0.000 claims abstract description 10
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 claims abstract 8
- 239000003795 chemical substances by application Substances 0.000 claims abstract 2
- 239000000203 mixture Substances 0.000 claims 10
- 238000009472 formulation Methods 0.000 claims 9
- 238000000034 method Methods 0.000 claims 9
- 238000005406 washing Methods 0.000 claims 6
- 150000004696 coordination complex Chemical class 0.000 claims 2
- RPNUMPOLZDHAAY-UHFFFAOYSA-N Diethylenetriamine Chemical compound NCCNCCN RPNUMPOLZDHAAY-UHFFFAOYSA-N 0.000 claims 1
- 239000008139 complexing agent Substances 0.000 claims 1
- 238000011109 contamination Methods 0.000 claims 1
- 230000014759 maintenance of location Effects 0.000 claims 1
- 239000000126 substance Substances 0.000 claims 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Detergent Compositions (AREA)
Abstract
본 발명은 반도체의 제조에 관한 것이다. 세척 단계 후에 실리콘 웨이퍼의 표면에 잔류하는 금속 불순물을 감소시키기 위해 "PIRANHA-RCA" 세척 순서의 "SC 1"단계에 예정된 농도의 EDTA와 같은 착물 형성제가 첨가된다.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 일반적으로 "RCA-세척"으로 공지된 반도체 제조 세척 순서에 대한 흐름도이다,
제2도는 제1도의 "RCA-세척"을 개선시킨, 본 발명의 한 구체예의 반도체 제조 세척 순서에 대한 흐름도이다.
Claims (18)
- 반도체 장치를 제조하는 데에 있어서, 실리콘 웨이퍼상에서 수행된 "RCA-세척" 세척 순서동안 실리콘 웨이퍼의 표면상의 금속 불순물을 감소시키기 위한 방법으로서, 용액 중에 결합된 금속 착물을 유지시키기 위한 변형된 "SC 1" 세척용액을 제공하여 상기 실리콘 웨이퍼의 표면상에 금속이 보유되는 것을 방지하기 위해, 상기 "RCA-세척"의 "SC 1" 세척 단계에서 사용하기 위해 제공된 (NH4OH+H2O2+H2O)의 화학 물질 용액에 예정된 양의 착물 형성제를 첨가하는 단계; 상기 변형된 "SC 1" 세척 용액을 탱크 공구에 보유시키는 단계; 및 상기 개선된 "RCA-세척"의 "SC 1" 단계 동안 예정된 시간 동안 상기 변형된 "SC 1" 세척 용액중에 상기 실리콘 웨이퍼를 침지시키는 단계로 이루어지는 개선된 방법.
- 제1항에 있어서, 상기 착물 형성제가 EDTA 및 DEQUEST를 포함하는 착물 형성제의 군 중 하나로부터 선택됨을 더 포함함을 특징으로 하는 방법.
- 제2항에 있어서, NH4OH 및 H2O2의 농도에 의존하여, 0.05mg/1 내지 0.10mg/1의 EDTA의 농도를 선택하는 단계를 더 포함함을 특징으로 하는 방법.
- 제3항에 있어서, 상기 선택 단계에서, 4중량%의 NH2OH 및 5중량%의 H2O2의 원래의 "SC 1" 제형에 첨가하기 위해 EDTA의 농도가 0.10mg/1임을 특징으로 하는 방법.
- 제3항에 있어서, 상기 선택 단계에서, 0.004중량%의 NH2OH 및 0.003중량%의 H2O2의 희석된 "SC 1" 제형에 첨가하기 위해 EDTA의 농도가 0.05mg/1임을 특징으로 하는 방법.
- 제2항에 있어서, "SC 1" 세척 용액에서, NH4OH 및 H2O2의 농도에 의존하여, 0.10mg/1 내지 0.30mg/1의 DEQUEST의 농도를 선택하는 단계를 더 포함함을 특징으로 하는 방법.
- 제3항에 있어서, 상기 선택 단계에서, 4중량%의 NH2OH 및 5중량%의 H2O2의 원래의 "SC 1" 제형에 첨가하기 위해 DEQUEST의 농도가 0.30mg/1임을 특징으로 하는 방법.
- 제3항에 있어서, 상기 선택 단계에서, 0.004중량%의 NH2OH 및 0.003중량%의 H2O2의 희석된 "SC 1" 제형에 첨가하기 위해 DEQUEST의 농도가 0.10mg/1임을 특징으로 하는 방법.
- 실리콘 웨이퍼의 "SC 1" 세척 동안 용액 중에 결합된 금속 착물을 유지시켜서 상기 실리콘 웨이퍼의 표면의 금속 오염을 감소시키기 위해 "SC 1" 단계를 위해(NH4OH+H2O2+H2O) 제형에 예정된 농도의 착물 형성제를 첨가하는 단계로 이루어지는, 실리콘 웨이퍼에 대한 "RCA-세척" 순서의 "SC 1" 세척 단계 개선시키기 위한 변형된 "SC 1" 세척 용액.
- 제9항에 있어서, 상기 착물 형성제가 EDTA 및 DEQUEST를 포함하는 착물 형성제의 군 중 하나로부터 선택됨을 특징으로 하는 변형된 "SC 1" 세척 용액.
- 상기 착물 형성제가, NH4OH 및 H2O2의 농도에 의존하여, 0.05mg/1 내지 0.10mg/1의 EDTA의 농도로 이루어짐을 특징으로 하는 변형된 "SC 1" 세척 용액.
- 제11항에 있어서, 4중량%의 NH2OH 및 5중량%의 H2O2의 원래의 "SC 1" 제형에 대해, EDTA의 농도가 0.10mg/1임을 특징으로 하는 변형된 "SC 1" 세척 용액.
- 제11항에 있어서, 0.004중량%의 NH2OH 및 0.003중량%의 H2O2의 희석된 "SC 1" 제형에 대해, ETA의 농도가 0.05mg/1임을 특징으로 하는 변형된 "SC 1" 세척 용액.
- 제9항에 있어서, 상기 착물 형성제가, NH4OH 및 H2O2의 농도에 의존하여, 0.10mg/1 내지 0.30mg/1의 농도의 DEQUEST로 이루어짐을 특징으로 하는 변형된 "SC 1" 세척 용액.
- 제14항에 있어서, 4중량%의 NH2OH 및 5중량%의 H2O2의 원래의 "SC 1" 제형에 대해 DEQUEST의 농도가 0.30mg/1임을 특징으로 하는 "SC 1" 세척 용액.
- 제14항에 있어서, 0.004중량%의 NH2OH 및 0.003중량%의 H2O2의 희석된 "SC 1" 제형에 대해, DEQUEST의 농도가 0.10mg/1임을 특징으로 하는 변형된 "SC 1" 세척 용액.
- 제9항에 있어서, 상기 착물 형성제가 각각 0.004중량% 내지 4중량%의 NH4OH 및 각각 0.003중량% 내지 5중량%의 H2O2의 농도에 대해, 0.05mg/1 내지 0.10mg/1의 농도를 갖는 DETA로 이루어짐을 특징으로 하는 변형된 "SC 1" 세척 용액.
- 제9항에 있어서, 상기 착물 형성제가 각각 0.004중량% 내지 4중량%의 NH4OH 및 각각 0.003중량% 내지 5중량%의 H2O2의 농도에 대해, 0.1mg/1 내지 0.3mg/1의 농도를 갖는 DEQUEST로 이루어짐을 특징으로 하는 변형된 "SC 1" 세척 용액.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/266,279 US5637151A (en) | 1994-06-27 | 1994-06-27 | Method for reducing metal contamination of silicon wafers during semiconductor manufacturing |
US08/266,279 | 1994-06-27 |
Publications (1)
Publication Number | Publication Date |
---|---|
KR960002617A true KR960002617A (ko) | 1996-01-26 |
Family
ID=23013918
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019950017406A KR960002617A (ko) | 1994-06-27 | 1995-06-26 | 반도체 제조동안 실리콘 웨이퍼의 금속 불순물의 감소방법 |
Country Status (5)
Country | Link |
---|---|
US (1) | US5637151A (ko) |
EP (1) | EP0690482A3 (ko) |
JP (1) | JPH0831784A (ko) |
KR (1) | KR960002617A (ko) |
TW (1) | TW269050B (ko) |
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-
1994
- 1994-06-27 US US08/266,279 patent/US5637151A/en not_active Expired - Fee Related
-
1995
- 1995-05-23 EP EP95107945A patent/EP0690482A3/en not_active Withdrawn
- 1995-05-24 TW TW084105218A patent/TW269050B/zh active
- 1995-06-26 JP JP7159663A patent/JPH0831784A/ja not_active Withdrawn
- 1995-06-26 KR KR1019950017406A patent/KR960002617A/ko not_active Application Discontinuation
Also Published As
Publication number | Publication date |
---|---|
EP0690482A2 (en) | 1996-01-03 |
TW269050B (ko) | 1996-01-21 |
JPH0831784A (ja) | 1996-02-02 |
EP0690482A3 (en) | 1996-04-17 |
US5637151A (en) | 1997-06-10 |
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