KR950701093A - 포지형 폴리이미드패턴의 형성방법(a method of forming positive polyimide patterns) - Google Patents

포지형 폴리이미드패턴의 형성방법(a method of forming positive polyimide patterns)

Info

Publication number
KR950701093A
KR950701093A KR1019940703469A KR19940703469A KR950701093A KR 950701093 A KR950701093 A KR 950701093A KR 1019940703469 A KR1019940703469 A KR 1019940703469A KR 19940703469 A KR19940703469 A KR 19940703469A KR 950701093 A KR950701093 A KR 950701093A
Authority
KR
South Korea
Prior art keywords
forming positive
positive polyimide
polyimide patterns
patterns
forming
Prior art date
Application number
KR1019940703469A
Other languages
English (en)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP06389493A external-priority patent/JP3319004B2/ja
Priority claimed from JP9013093A external-priority patent/JP3303416B2/ja
Application filed filed Critical
Publication of KR950701093A publication Critical patent/KR950701093A/ko

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/38—Treatment before imagewise removal, e.g. prebaking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0387—Polyamides or polyimides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/032—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders
    • G03F7/037—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders the binders being polyamides or polyimides
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing
    • Y10S430/107—Polyamide or polyurethane

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
KR1019940703469A 1993-02-03 1994-10-01 포지형 폴리이미드패턴의 형성방법(a method of forming positive polyimide patterns) KR950701093A (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP1630293 1993-02-03
JP06389493A JP3319004B2 (ja) 1993-02-03 1993-03-23 ポジ型ポリイミドパターンの形成方法
JP9013093A JP3303416B2 (ja) 1993-04-16 1993-04-16 感光性ポリイミド前駆体用現像液
PCT/JP1994/000104 WO1994018607A1 (en) 1993-02-03 1994-01-26 Process for forming positive polyimide pattern

Publications (1)

Publication Number Publication Date
KR950701093A true KR950701093A (ko) 1995-02-20

Family

ID=27281344

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019940703469A KR950701093A (ko) 1993-02-03 1994-10-01 포지형 폴리이미드패턴의 형성방법(a method of forming positive polyimide patterns)

Country Status (3)

Country Link
US (1) US5614354A (ko)
KR (1) KR950701093A (ko)
WO (1) WO1994018607A1 (ko)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR19990037527A (ko) 1997-10-31 1999-05-25 후지쯔 가부시끼가이샤 폴리이미드계 감광성 수지조성물용 현상액
US6887916B2 (en) 2000-12-28 2005-05-03 Kimberly-Clark Worldwide, Inc. Materials having controlled shrinkage and patterns and methods of making same
US7499125B2 (en) * 2004-01-28 2009-03-03 Kent State University Method of fabricating electro-optical devices with polymer-stabilized liquid crystal molecules
KR100764375B1 (ko) * 2005-12-15 2007-10-08 주식회사 하이닉스반도체 반도체 소자의 하드마스크용 고분자 및 이를 함유하는조성물
TWI754734B (zh) * 2017-03-29 2022-02-11 日商富士軟片股份有限公司 感光性樹脂組成物、硬化膜、積層體、硬化膜的製造方法及半導體裝置

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2092164B (en) * 1980-12-17 1984-12-05 Hitachi Ltd Loght or radiation-sensitive polymer composition
JPS57168942A (en) * 1981-04-13 1982-10-18 Hitachi Ltd Photosensitive polymer composition
EP0119719B1 (en) * 1983-03-03 1987-05-06 Toray Industries, Inc. Radiation sensitive polymer composition
JPS59160139A (ja) * 1983-03-04 1984-09-10 Hitachi Ltd 感光性重合体組成物
EP0188205B1 (de) * 1985-01-15 1988-06-22 Ciba-Geigy Ag Polyamidester-Fotoresist-Formulierungen gesteigerter Empfindlichkeit
DE3683464D1 (de) * 1985-12-05 1992-02-27 Ibm Photoresistzusammensetzungen mit vermindertem loesungsgrad in basischen entwicklern, auf basis von durch diazochinon sensibilisierter polyamidsaeure.
JPS62145239A (ja) * 1985-12-19 1987-06-29 Mitsubishi Electric Corp ポジ型感光性耐熱材料
US4830953A (en) * 1986-08-18 1989-05-16 Ciba-Geigy Corporation Radiation-sensitive coating composition with polyazide and polyimide and process of photo-crosslinking the coating
JPS6461747A (en) * 1987-09-01 1989-03-08 Mitsubishi Electric Corp Positive type photosensitive heat-resisting material
JP2625910B2 (ja) * 1988-06-23 1997-07-02 東レ株式会社 ポリイミド積層膜の製造方法
US4877718A (en) * 1988-09-26 1989-10-31 Rennsselaer Polytechnic Institute Positive-working photosensitive polyimide operated by photo induced molecular weight changes
DE3837612A1 (de) * 1988-11-05 1990-05-23 Ciba Geigy Ag Positiv-fotoresists von polyimid-typ
JPH02186350A (ja) * 1989-01-12 1990-07-20 Fujitsu Ltd 感光性樹脂およびパターン形成方法
US5238784A (en) * 1989-11-30 1993-08-24 Sumitomo Bakelite Company Limited Photosensitive resin composition with polyamic acid polymer
US5114826A (en) * 1989-12-28 1992-05-19 Ibm Corporation Photosensitive polyimide compositions
JPH0415226A (ja) * 1990-05-10 1992-01-20 Chisso Corp ヒドロキシフェニル基を有する感光性耐熱重合体
JP2828736B2 (ja) * 1990-05-29 1998-11-25 住友ベークライト株式会社 ポジ型感光性樹脂組成物
DE69128187T2 (de) * 1990-09-28 1998-03-26 Toshiba Kawasaki Kk Fotoempfindliche Harzzusammensetzung zum Herstellen eines Polyimidfilmmusters und Verfahren zum Herstellen eines Polyimidfilmmusters

Also Published As

Publication number Publication date
US5614354A (en) 1997-03-25
WO1994018607A1 (en) 1994-08-18

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Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E601 Decision to refuse application