KR950014969A - How to hydrophilize polysilicon surfaces - Google Patents

How to hydrophilize polysilicon surfaces Download PDF

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Publication number
KR950014969A
KR950014969A KR1019930023067A KR930023067A KR950014969A KR 950014969 A KR950014969 A KR 950014969A KR 1019930023067 A KR1019930023067 A KR 1019930023067A KR 930023067 A KR930023067 A KR 930023067A KR 950014969 A KR950014969 A KR 950014969A
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KR
South Korea
Prior art keywords
polysilicon
hydrophilize
solution
silicon
mixed
Prior art date
Application number
KR1019930023067A
Other languages
Korean (ko)
Other versions
KR0121772B1 (en
Inventor
이동덕
이석현
Original Assignee
김주용
현대전자산업 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김주용, 현대전자산업 주식회사 filed Critical 김주용
Priority to KR1019930023067A priority Critical patent/KR0121772B1/en
Publication of KR950014969A publication Critical patent/KR950014969A/en
Application granted granted Critical
Publication of KR0121772B1 publication Critical patent/KR0121772B1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31144—Etching the insulating layers by chemical or physical means using masks

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Weting (AREA)

Abstract

본 발명은 반도체 소자 제조 공정에서 산화막을 습식 식각하는 경우에 실리콘이나 폴리실리콘 표면에 생기기 쉬운 잔류 물질의 생성을 억제하기 위하여 실리콘이나 폴리실리콘의 표면을 친수성화시키는 방법에 관한 기술이다.The present invention relates to a method of hydrophilizing the surface of silicon or polysilicon in order to suppress the generation of residual substances which are likely to occur on the surface of silicon or polysilicon when the oxide film is wet etched in the semiconductor device manufacturing process.

Description

폴리실리콘 표면을 친수성화시키는 방법How to hydrophilize polysilicon surfaces

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

Claims (2)

반도체 소자의 전 제조 공정에서, 불화수소를 사용한 습식 산화막 식각 공정을 거친 후에 실리콘이나 폴리실리콘 표면에 생성되는 잔류 물질(residue)을 제거할 수 있도록 물에 H2O2와 NH4OH를 섞은 용액에 담금 처리를 실시하는 방법.In the entire manufacturing process of semiconductor devices, a solution of H 2 O 2 and NH 4 OH mixed in water to remove residual materials formed on the surface of silicon or polysilicon after a wet oxide film etching process using hydrogen fluoride How to carry out immersion treatment. 제1항에 있어서, 상기 담금 처리시에 사용되는 용액은 물에 0.1% 이상의 H2O2이상의 H2O2와 0.1% dlgkdml NH4OH를 섞은 용액인 것을 특징으로 하는 방법.The method of claim 1, wherein the solution used during the immersion treatment is a solution in which at least 0.1% of H 2 O 2 or more of H 2 O 2 and 0.1% dlgkdml NH 4 OH are mixed. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019930023067A 1993-11-02 1993-11-02 Method for hydrophilization of polysilicon surface KR0121772B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019930023067A KR0121772B1 (en) 1993-11-02 1993-11-02 Method for hydrophilization of polysilicon surface

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019930023067A KR0121772B1 (en) 1993-11-02 1993-11-02 Method for hydrophilization of polysilicon surface

Publications (2)

Publication Number Publication Date
KR950014969A true KR950014969A (en) 1995-06-16
KR0121772B1 KR0121772B1 (en) 1997-11-13

Family

ID=19367163

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019930023067A KR0121772B1 (en) 1993-11-02 1993-11-02 Method for hydrophilization of polysilicon surface

Country Status (1)

Country Link
KR (1) KR0121772B1 (en)

Also Published As

Publication number Publication date
KR0121772B1 (en) 1997-11-13

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