KR950007003A - VMD structure and manufacturing method thereof - Google Patents

VMD structure and manufacturing method thereof Download PDF

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Publication number
KR950007003A
KR950007003A KR1019930016936A KR930016936A KR950007003A KR 950007003 A KR950007003 A KR 950007003A KR 1019930016936 A KR1019930016936 A KR 1019930016936A KR 930016936 A KR930016936 A KR 930016936A KR 950007003 A KR950007003 A KR 950007003A
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KR
South Korea
Prior art keywords
tip
layer
forming
vmd
photoresist
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KR1019930016936A
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Korean (ko)
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KR960014805B1 (en
Inventor
성강현
허창우
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이헌조
주식회사 금성사
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Priority to KR1019930016936A priority Critical patent/KR960014805B1/en
Publication of KR950007003A publication Critical patent/KR950007003A/en
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Publication of KR960014805B1 publication Critical patent/KR960014805B1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J31/00—Cathode ray tubes; Electron beam tubes
    • H01J31/08—Cathode ray tubes; Electron beam tubes having a screen on or from which an image or pattern is formed, picked up, converted, or stored
    • H01J31/10—Image or pattern display tubes, i.e. having electrical input and optical output; Flying-spot tubes for scanning purposes
    • H01J31/12—Image or pattern display tubes, i.e. having electrical input and optical output; Flying-spot tubes for scanning purposes with luminescent screen

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  • Cold Cathode And The Manufacture (AREA)
  • Cathode-Ray Tubes And Fluorescent Screens For Display (AREA)

Abstract

본 발명은 브이엠디(VMD) 구조 및 그 제조방법에 관한 것으로, 종래 브이엠디(VMD)는 제조공정이 매우 복잡하며 75˚각도에서 증발시켜 팁을 형성하는 과정에서 높은 난이도의 기술을 요하므로, 생산수율이 매우 낮고, 특히 공정수가 많아 단가도 높은 문제점이 있었다. 본 발명은 이러한 문제점을 해결하기 위하여 팁형성을 반응성 이온 에칭공정에 의해 테이퍼 에칭으로 형성함으로써, 제조공정이 간단하여 생산수율을 높일 수 있고, 제조공정을 단순화할 수 있어 단가가 높아지게 되는 것이다.The present invention relates to a VMD (VMD) structure and a method of manufacturing the same, and the conventional VMD (VMD) is a very complicated manufacturing process and requires a high difficulty technology in the process of forming a tip by evaporating at an angle of 75 °, Production yield is very low, especially the number of processes has a high unit cost. In order to solve the problem, the present invention forms the tip by taper etching by a reactive ion etching process, thereby simplifying the manufacturing process, increasing the production yield, and simplifying the manufacturing process, thereby increasing the unit cost.

Description

브이엠디(VMD) 구조 및 그 제조방법VMD structure and manufacturing method thereof

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제1도는 종래 브이엠디(VMD) 구조도.1 is a conventional VMD structure diagram.

제2도의 (가) 내지 (바)는 종래 브이엠디(VMD) 제조 공정도.(A) to (B) of Figure 2 is a conventional manufacturing process diagram of VMD (VMD).

제3도는 본 발명 브이엠디(VMD) 구조도.3 is a structural diagram of the present invention MBD (VMD).

제4도의 (가) 내지 (마)는 본 발명 브이엠디(VMD) 제조 공정도.Figure 4 (a) to (e) is a manufacturing process diagram of the present invention MBD (VMD).

제5도의 (가) 내지 (라)는 본 발명 브이엠디(VMD)의 다른 제조 공정도.(A) to (d) of FIG. 5 is another manufacturing process diagram of VMD of the present invention.

Claims (5)

유리기판(1)상에 투명전극(15)이 형성되고, 그 투명전극(15) 중앙에는 형광층(16)이 형성됨과 아울러 양쪽에는 절연층(13)과 게이트 전극(14)이 차례로 형성되고, 다른 유리기판(10)상에 도전성 캐소드층(11)과 팁(12)이 연속 형성되어 상기 두 유리기판(10)(10′)이 진공상태로 합착되어 구성되는 것을 특징으로 하는 브이엠디(vmd)구조.The transparent electrode 15 is formed on the glass substrate 1, the fluorescent layer 16 is formed in the center of the transparent electrode 15, and the insulating layer 13 and the gate electrode 14 are sequentially formed on both sides. The conductive cathode layer 11 and the tip 12 are continuously formed on the other glass substrate 10 so that the two glass substrates 10 and 10 'are bonded to each other in a vacuum state. vmd) structure. 기판위에 투명전극, 절연층, 게이트전극을 차례로 증착한 후, 감광막(PR)을 이용하여 상기 게이트 전극과, 절연층을 식각하는 공정과, 기판 전면에 형광층을 증착하는 공정과, 게이트 전극 위에 남아있는 감광막(PR)을 제거하는 공정과 다른 기판 위에 도전성 캐소드층과 팁을 차례로 형성하는 공정과, 상기 두 기판을 어라인하는 공정으로 이루어지는 것을 특징으로 하는 브이엠디(VMD) 제조방법.Depositing a transparent electrode, an insulating layer, and a gate electrode on a substrate in order, etching the gate electrode and the insulating layer using a photoresist film (PR), depositing a fluorescent layer on the entire surface of the substrate, and And removing the remaining photoresist film (PR), forming a conductive cathode layer and a tip on another substrate in turn, and arranging the two substrates. 제2항에 있어서, 팁형성 공정은 상기 도전성 캐소드층 위에 팁층을 형성한 후, 팁층 위에 감광막(PR) 패턴을 형성하는 공정과, 상기 감광막(PR)을 열처리(Baking)하는 공정과 열처리된 감광막(PR)과 팁층을 반응성 이온 에칭(RIE)으로 식각하는 공정을 포함하는 것을 특징으로 하는 브이엠디(VMD) 제조방법.The method of claim 2, wherein the forming of the tip comprises forming a tip layer on the conductive cathode layer, forming a photoresist pattern on the tip layer, baking the photoresist PR, and baking the photoresist. (PR) and the tip layer by etching reactive ion etching (RIE) comprising a method of manufacturing a VMD (VMD). 기판 위에 도전성 캐소드층을 형성한 후, 그 위에 팁을 형성공정과 상기 팁 위에 절연층과 게이트 전극을 연속 증착한 후 상기 게이트 전극과 절연층을 식각하는 공정과, 다른 기판위에 투명전극과 형광층을 차례로 형성하는 공정과, 상기 두 기판을 어라인하는 공정으로 이루어지는 것을 특징으로 하는 브이엠디(VMD) 제조방법.After forming a conductive cathode layer on a substrate, forming a tip thereon, and subsequently depositing an insulating layer and a gate electrode on the tip, and then etching the gate electrode and the insulating layer, and a transparent electrode and a fluorescent layer on another substrate And forming the two substrates in turn, and arranging the two substrates. 제4항에 있어서, 팁형성 공정은 상기 도전성 캐소드층 위에 팁층을 형성한 후, 팁층 위에 감광막(PR) 패턴을 형성하는 공정과, 상기 감광막(PR)을 열처리(Baking)하는 공정과 열처리된 감광막(PR)과 팁층을 반응성 이온 에칭(RIE)으로 식각하는 공정을 포함하는 것을 특징으로 하는 브이엠디(VMD) 제조방법.The method of claim 4, wherein the forming of the tip comprises forming a tip layer on the conductive cathode layer, forming a photoresist pattern on the tip layer, baking the photoresist film, and baking the photoresist. (PR) and the tip layer by etching reactive ion etching (RIE) comprising a method of manufacturing a VMD (VMD). ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019930016936A 1993-08-28 1993-08-28 Vmd structure and manufacturing method KR960014805B1 (en)

Priority Applications (1)

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KR1019930016936A KR960014805B1 (en) 1993-08-28 1993-08-28 Vmd structure and manufacturing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019930016936A KR960014805B1 (en) 1993-08-28 1993-08-28 Vmd structure and manufacturing method

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KR950007003A true KR950007003A (en) 1995-03-21
KR960014805B1 KR960014805B1 (en) 1996-10-19

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CN108414226B (en) * 2017-12-25 2019-07-19 哈尔滨理工大学 Fault Diagnosis of Roller Bearings under variable working condition based on feature transfer learning

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