KR950004448A - How to set the film thickness - Google Patents

How to set the film thickness Download PDF

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Publication number
KR950004448A
KR950004448A KR1019930012955A KR930012955A KR950004448A KR 950004448 A KR950004448 A KR 950004448A KR 1019930012955 A KR1019930012955 A KR 1019930012955A KR 930012955 A KR930012955 A KR 930012955A KR 950004448 A KR950004448 A KR 950004448A
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KR
South Korea
Prior art keywords
die
pattern
photoresist
reflectance
film thickness
Prior art date
Application number
KR1019930012955A
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Korean (ko)
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KR960011469B1 (en
Inventor
이두희
박규동
구영모
백동원
Original Assignee
김주용
현대전자산업 주식회사
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Priority to KR1019930012955A priority Critical patent/KR960011469B1/en
Publication of KR950004448A publication Critical patent/KR950004448A/en
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Publication of KR960011469B1 publication Critical patent/KR960011469B1/en

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  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

본 발명은 제3도와 같이 하나의 마스크 공정이 진행되어 웨이퍼 상에 서로 다른 단차를 가지는 패턴이 형성되어 있는 상태에서 포토레지스트를 덮고 다음 포토마스크 공정을 수행하기 위한 감광막 두께 설정 방법에 있어서, 마스크 패턴 공정이 진행되어 높은 단차를 가지고 다이(die)내에 형성되는 일정패턴 영역(6)과 마스크 패턴 공정이 진행되어 낮은 단차를 가지고 다이(die)내에 형성되는 일정패턴 영역(7,8,9)을 스크라이브 라인 상에 형성하되, 반사율을 측정할 수 있도록 스크라이브 라인이 허용하는 범위에서 다이에 형성되는 실제 패턴 크기보다 크게 형성하는 단계와 ; 상기 모니터링 패턴에 감광막을 도포하여 감광막 도포 두께에 대한 반사율을 모니터링하는 단계와 ; 상기 모니터링 결과 반사율의 차이가 가장 적은 감광막 두께를 선정하여 그 두께로 다이내에 감광막을 도포하는 단계로 이루어지는 것을 특징으로 하는 감광막 두께 설정 방법에 관한 것이다.In the method of setting a photoresist film thickness for covering a photoresist in a state in which a mask having a different step is formed on a wafer as shown in FIG. The process proceeds to form a constant pattern region 6 formed in a die with a high step and the mask pattern process proceeds to form a constant pattern region 7, 8, and 9 formed in a die with a low step. Forming on the scribe line, but larger than the actual pattern size formed on the die in a range allowed by the scribe line to measure reflectance; Monitoring a reflectance of the photoresist coating thickness by applying a photoresist to the monitoring pattern; A method for setting a photosensitive film thickness comprising the step of selecting the photosensitive film thickness having the smallest difference in reflectance as a result of the monitoring and applying the photosensitive film to the die at the thickness.

Description

감광막 두께 설정 방법How to set the film thickness

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제3도는 본 발명에 따라 모니터링 패턴을 형성하기 위한 레티클 평면도, 제4도는 본 발명의 감광막 두께 설정방법에 따른 코팅 장비의 회전수 대 반사율 그래프.3 is a plan view of a reticle for forming a monitoring pattern according to the present invention, and FIG. 4 is a graph of rotational speed vs. reflectance of coating equipment according to the method for setting the photosensitive film thickness of the present invention.

Claims (1)

하나의 마스크 공정이 진행되어 웨이퍼 상에 서로 다른 단차를 가지는 패턴이 형성되어 있는 상태에서 포토레지스트를 덮고 다음 포토마스크 공정을 수행하기 위한 감광막 두께 설정 방법에 있어서, 마스크 패턴 공정이 진행되어 높은 단차를 가지고 다이(die)내에 형성되는 일정패턴 영역(6)과 마스크 패턴 공정이 진행되어 낮은 단차를 가지고 다이(die)내에 형성되는 일정패턴 영역(7,8,9)을 스크라이브 라인 상에 형성하되, 반사율을 측정할 수 있도록 스크라이브라인이 허용하는 범위에서 다이에 형성되는 실제 패턴 크기보다 크게 형성하는 단계와; 상기 모니터링 패턴에 감광막을도포하여 감광막 도포 두께에 대한 반사율을 모니터링하는 단계와; 상기 모니터링 결과 반사율의 차이가 가장적은 감광막두께를 선정하여 그 두께로 다이내에 감광막을 도포하는 단계로 이루어지는 것을 특징으로 하는 감광막 두께 설정 방법.In a method of setting a photoresist film thickness for covering a photoresist in a state in which one mask process is performed and patterns having different steps are formed on a wafer, and performing a next photomask process, a mask pattern process is performed to produce a high step. And the pattern pattern region 6 formed in the die and the mask pattern process are performed to form the pattern region 7, 8, 9 formed in the die with low steps on the scribe line, Forming larger than the actual pattern size formed on the die in a range allowed by the scribebrain to measure the reflectance; Coating a photoresist film on the monitoring pattern to monitor the reflectance of the photoresist coating thickness; And selecting the photoresist film thickness having the smallest difference in reflectance as a result of the monitoring, and applying the photoresist film to the die at the thickness thereof. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019930012955A 1993-07-09 1993-07-09 Determining mehtod of photoresist film thickness KR960011469B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019930012955A KR960011469B1 (en) 1993-07-09 1993-07-09 Determining mehtod of photoresist film thickness

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019930012955A KR960011469B1 (en) 1993-07-09 1993-07-09 Determining mehtod of photoresist film thickness

Publications (2)

Publication Number Publication Date
KR950004448A true KR950004448A (en) 1995-02-18
KR960011469B1 KR960011469B1 (en) 1996-08-22

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Application Number Title Priority Date Filing Date
KR1019930012955A KR960011469B1 (en) 1993-07-09 1993-07-09 Determining mehtod of photoresist film thickness

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KR960011469B1 (en) 1996-08-22

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