KR950002138A - Manufacturing method of high power laser diode - Google Patents

Manufacturing method of high power laser diode Download PDF

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Publication number
KR950002138A
KR950002138A KR1019930011791A KR930011791A KR950002138A KR 950002138 A KR950002138 A KR 950002138A KR 1019930011791 A KR1019930011791 A KR 1019930011791A KR 930011791 A KR930011791 A KR 930011791A KR 950002138 A KR950002138 A KR 950002138A
Authority
KR
South Korea
Prior art keywords
forming
mesa
island
manufacturing
laser diode
Prior art date
Application number
KR1019930011791A
Other languages
Korean (ko)
Other versions
KR100273337B1 (en
Inventor
임시종
Original Assignee
이헌조
주식회사 금성사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 이헌조, 주식회사 금성사 filed Critical 이헌조
Priority to KR1019930011791A priority Critical patent/KR100273337B1/en
Publication of KR950002138A publication Critical patent/KR950002138A/en
Application granted granted Critical
Publication of KR100273337B1 publication Critical patent/KR100273337B1/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2202—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure by making a groove in the upper laser structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers

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  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

본 발명은 고출력 레이저 다이오드의 제조방법에 관한 것으로, 반도체 기판위에 벽개면과의 간격이 총공진기장의 20% 이하인 섬형메사를 형성하는 공정, 상기 섬형메사 형성 후 결과를 전면에 전류 제한층을 형성하는 공정을 포함하는 것을 특징으로 하며, COD를 방지하고 저전류에서도 고출력이 가능한 효과가 있다.The present invention relates to a method for manufacturing a high power laser diode, comprising: forming an island-shaped mesa having a gap between cleaved surfaces of 20% or less of a total resonance field on a semiconductor substrate, and forming a current limiting layer on the entire surface after forming the island-like mesa Characterized in that it includes, there is an effect that can prevent COD and high output even at low current.

Description

고출력 레이저 다이오드의 제조방법Manufacturing method of high power laser diode

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제3도는 본 발명에 의한 레이저 다이오드의 제1실시예의 단면도. 제4도는 본 발명에 의한 레이저 다이오드를 제조하기 위한 공정순서도.3 is a sectional view of a first embodiment of a laser diode according to the present invention; 4 is a process flowchart for manufacturing a laser diode according to the present invention.

Claims (4)

기판상부에 벽개면과 소정의 간격을 갖는 제1차 섬형메사를 형성하는 공정과, 상기 결과물 전면에 전류제한층을 형성하는 공정과, 상기 전류제한층을 상기 제1차 섬형메사가 드러날때까지 식각하여 그루브를 형성하는 공정 및 상기 그루브 형성후 결과물 전면에 다층 구조의 더블헤테로층을 형성하는 공정을 구비하여 이루어지는 것을 특징으로 하는 고출력 레이저 다이오드의 제조방법.Forming a first island-like mesa having a predetermined distance from the cleaved surface on the substrate, forming a current limiting layer on the entire surface of the resultant, and etching the current limiting layer until the first island-like mesa is exposed. And a step of forming a groove and a step of forming a double hetero layer having a multi-layer structure on the entire surface of the resultant after the groove is formed. 제1항에 있어서, 상기 벽개면과 제1차 섬형메사와의 간격을 총공진기장의 20% 이하인 것을 특징으로 하는 고출력 레이저 다이오드의 제조방법.The method of manufacturing a high power laser diode according to claim 1, wherein a distance between the cleaved surface and the first island-shaped mesa is 20% or less of a total resonance field. 제1항에 있어서, 상기 그루브 형성 후 제2차 메사를 형성하는 공정을 더 포함하는 것을 특징으로 고출력 레이저 다이오드의 제조방법.The method of claim 1, further comprising forming a second mesa after the groove is formed. 제1항에 있어서, 상기 제2차 메사는 벽개면 부근에서의 폭이 다른 부분보다 좁게 형성되는 것을 특징으로 하는 고출력 레이저 다이오드의 제조방법.The method of claim 1, wherein the second mesa is formed to have a smaller width than the other portion near the cleaved surface. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019930011791A 1993-06-26 1993-06-26 Method for producing high power laser diodes KR100273337B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019930011791A KR100273337B1 (en) 1993-06-26 1993-06-26 Method for producing high power laser diodes

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019930011791A KR100273337B1 (en) 1993-06-26 1993-06-26 Method for producing high power laser diodes

Publications (2)

Publication Number Publication Date
KR950002138A true KR950002138A (en) 1995-01-04
KR100273337B1 KR100273337B1 (en) 2001-01-15

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ID=40749345

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019930011791A KR100273337B1 (en) 1993-06-26 1993-06-26 Method for producing high power laser diodes

Country Status (1)

Country Link
KR (1) KR100273337B1 (en)

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Publication number Publication date
KR100273337B1 (en) 2001-01-15

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