KR940020488A - Isial Etching Equipment - Google Patents

Isial Etching Equipment Download PDF

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Publication number
KR940020488A
KR940020488A KR1019930001638A KR930001638A KR940020488A KR 940020488 A KR940020488 A KR 940020488A KR 1019930001638 A KR1019930001638 A KR 1019930001638A KR 930001638 A KR930001638 A KR 930001638A KR 940020488 A KR940020488 A KR 940020488A
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KR
South Korea
Prior art keywords
resonator
esr
plasma
etching apparatus
waveguide
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KR1019930001638A
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Korean (ko)
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KR960013139B1 (en
Inventor
강형창
성노영
이청대
김대희
Original Assignee
김주용
현대전자산업 주식회사
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Priority to KR1019930001638A priority Critical patent/KR960013139B1/en
Publication of KR940020488A publication Critical patent/KR940020488A/en
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Publication of KR960013139B1 publication Critical patent/KR960013139B1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)

Abstract

본 발명은 마이크로파를 발생시키는 마그네트론 헤드(1), 상기 마그네트론 헤드(1)에서 발생한 전자파를 공진기(6)로 안내하는 엘보형 도파관(3), 상기 도파관(3)과 공진기(6) 사이에 설치되어지는 모드 변환기(4), 상기 모드변환기(4)와 동일한 구배를 갖고 형성되어지는 공진기(6), 상기 공진기(6)의 외벽에 형성되어 자기장을 형성하여 고밀도 플라즈마를 형성하는 코일(10), 상기 모드 변환기(4)와 공진기(6) 사이에 형성되어 마이크로파를 투과시키는 석영(5), 상기 석영(5)과 공진기 사이에 인입되어 공진기(6) 내부를 밀폐하여 고진공으로 유자하는 O-링(14), 상기 마그네트론 헤드(1)와 도파관(3) 사이에 설치되어 공진기(6)내의 임피던스 변화에 따라 매칭(Matching) 시켜주는 튜너(2), 상기 공진기(6)에서 형성된 플라즈마를 이용하여 RF(Radio Frequency)가 걸리는 전극(9)에 놓여진 웨이퍼(8)를 식각하는 반응실(7)을 포함하여 이루어지는 것을 특징으로 하는 이시알(ECR)식각장비에 관한 것이다.The present invention provides a magnetron head (1) for generating microwaves, an elbow waveguide (3) for guiding electromagnetic waves generated from the magnetron head (1) to the resonator (6), and installed between the waveguide (3) and the resonator (6). The mode converter 4, the resonator 6 having the same gradient as the mode converter 4, and the coil 10 formed on the outer wall of the resonator 6 to form a magnetic field to form a high density plasma. And a quartz (5) formed between the mode converter (4) and the resonator (6) to transmit microwaves, and introduced between the quartz (5) and the resonator to seal the inside of the resonator (6) and remain in high vacuum. The tuner 2 is provided between the ring 14, the magnetron head 1, and the waveguide 3 to match the impedance change in the resonator 6, and the plasma formed by the resonator 6 is used. Electrode (9) receiving RF (Radio Frequency) Ishihara, characterized in that comprising a reaction chamber (7) to etch the wafer placed 8 Al (ECR) relates to the etching equipment.

Description

이시알 식각장비Isial Etching Equipment

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제1도는 본 발명에 따른 ECR 식각장비의 전체 구조도.1 is an overall structure diagram of an ECR etching apparatus according to the present invention.

제2도는 본 발명에 따른 체적이 큰 ECR공진기 내부의 자기장 분포도.2 is a magnetic field distribution diagram inside a large volume ECR resonator according to the present invention.

제3도는 본 발명에 따른 체적이 작은 ECR공진기 내부의 자기장 분포도.3 is a magnetic field distribution diagram inside an ECR resonator having a small volume according to the present invention.

Claims (7)

이시알(Eletron cyclotron Resonance;ECR) 식각장비에 있어서, 마이크로파를 발생시키는 마그네트론 헤드(1), 상기 마그네트론 헤드(1)에서 발생한 전자파를 공진기(6)로 안내하는 엘보형 도파관(3), 상기 도파관(3)과 공진기(6) 사이에 설치되어지는 모드 변환기(4), 상기 모드변환기(4)와 동일한 구배를 갖고 형성되어지는 공진기(6), 상기 공진기(6)의 외벽에 형성되어 자기장을 형성하여 고밀도 플라즈마를 형성하는 코일(10), 상기 모드 변환기(4)와 공진기(6) 사이에 형성되어 마이크로파를 투과시키는 석영(5), 상기 석영(5)과 공진기 사이에 인입되어 공진기(6) 내부를 밀폐하여 고진공으로 유자하는 O-링(14), 상기 마그네트론 헤드(1)와 도파관(3) 사이에 설치되어 공진기(6)내의 임피던스 변화에 따라 매칭(Matching) 시켜주는 튜너(2), 상기 공진기(6)에서 형성된 플라즈마를 이용하여 RF(Radio Frequency)가 걸리는 전극(9)에 놓여진 웨이퍼(8)를 식각하는 반응실(7)을 포함하여 이루어지는 것을 특징으로 하는 이시알(ECR)식각장비.In an Eletron cyclotron Resonance (ECR) etching apparatus, a magnetron head 1 for generating microwaves, an elbow waveguide 3 for guiding electromagnetic waves generated from the magnetron head 1 to the resonator 6, and the waveguide The mode converter 4 provided between the resonator 6 and the resonator 6, the resonator 6 having the same gradient as the mode converter 4, and the outer wall of the resonator 6 are formed to form a magnetic field. A coil 10 which forms a high density plasma to form a high density plasma, a quartz 5 formed between the mode converter 4 and the resonator 6 to transmit microwaves, and a resonator 6 that is inserted between the quartz 5 and the resonator. O-ring 14 which seals the inside and flows in high vacuum, and is installed between the magnetron head 1 and the waveguide 3 so as to match according to the impedance change in the resonator 6. , Plasma formed in the resonator (6) ESR (ECR) etching equipment, characterized in that it comprises a reaction chamber (7) for etching the wafer (8) placed on the electrode (9) subjected to RF (Radio Frequency). 제1항에 있어서, 원하는 ECR층을 얻기 위해 상기 공진기(6) 외벽에 설치되어져 최적의 전류가 인입되는 수직 적층형의 코일(10)을 형성하는 것을 특징으로 하는 이시알(ECR) 식각장비.2. The ESR etching apparatus according to claim 1, wherein a vertically stacked coil (10) is formed on an outer wall of the resonator (6) to obtain a desired ECR layer, in which an optimal current is introduced. 제1항에 있어서, 플라즈마의 밀도를 증가시켜 상기 공진기(6) 외벽에 영구자석(11)을 인입하는 것을 특징으로 하는 이시알(ECR) 식각장비.2. The ESR etching apparatus according to claim 1, wherein the permanent magnet (11) is introduced into the outer wall of the resonator (6) by increasing the density of the plasma. 제1항에 있어서, 플라즈마 발생에 의해 고온이되는 공진기(6)를 냉각시키기 위하여 공진기(6) 외벽에 냉매가 순환할 수 있도록 냉각수 홈(13)을 형성하는 것을 특징으로 하는 이시알(ECR) 식각장비.The coolant groove (ECR) according to claim 1, characterized in that a coolant groove (13) is formed on the outer wall of the resonator (6) to cool the resonator (6) which is heated to high temperature by plasma generation. Etching equipment. 제1항, 제3항 또는 제4항에 있어서, 상기 공진기(6)는 플라즈마를 형성하는 개스가 주입되는 개스 주입구(12)를 적어도 하나 이상을 가지는 것을 특징으로 하는 이시알(ECR) 식각장비.The ESR etching apparatus according to claim 1, 3 or 4, wherein the resonator 6 has at least one gas injection hole 12 into which a gas forming plasma is injected. . 제5항에 있어서, 상기 개스 주입구(12)는 90도 간격을 갖고 공진기(6)의 4군데에 형성되어지는 것을 특징으로 하는 이시알(ECR) 식각장비.6. The ESR etching apparatus according to claim 5, wherein the gas inlet 12 is formed at four positions of the resonator 6 at intervals of 90 degrees. 제5항에 있어서, 상기 개스 주입구(12)의 구입구는 직경 2㎜홀로 이루어지는 것을 특징으로 하는 이시알(ECR) 식각장비.6. The ESR etching apparatus according to claim 5, wherein the gas inlet 12 is made of a hole having a diameter of 2 mm. ※참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: It is to be disclosed based on the initial application.
KR1019930001638A 1993-02-06 1993-02-06 Ecr etcher KR960013139B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019930001638A KR960013139B1 (en) 1993-02-06 1993-02-06 Ecr etcher

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Application Number Priority Date Filing Date Title
KR1019930001638A KR960013139B1 (en) 1993-02-06 1993-02-06 Ecr etcher

Publications (2)

Publication Number Publication Date
KR940020488A true KR940020488A (en) 1994-09-16
KR960013139B1 KR960013139B1 (en) 1996-09-30

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