KR940017855U - Excess process liquid discharge device of low pressure chemical vapor deposition reactor - Google Patents

Excess process liquid discharge device of low pressure chemical vapor deposition reactor

Info

Publication number
KR940017855U
KR940017855U KR2019920025776U KR920025776U KR940017855U KR 940017855 U KR940017855 U KR 940017855U KR 2019920025776 U KR2019920025776 U KR 2019920025776U KR 920025776 U KR920025776 U KR 920025776U KR 940017855 U KR940017855 U KR 940017855U
Authority
KR
South Korea
Prior art keywords
vapor deposition
low pressure
chemical vapor
discharge device
liquid discharge
Prior art date
Application number
KR2019920025776U
Other languages
Korean (ko)
Other versions
KR200152530Y1 (en
Inventor
허광수
Original Assignee
엘지반도체주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 엘지반도체주식회사 filed Critical 엘지반도체주식회사
Priority to KR2019920025776U priority Critical patent/KR200152530Y1/en
Publication of KR940017855U publication Critical patent/KR940017855U/en
Application granted granted Critical
Publication of KR200152530Y1 publication Critical patent/KR200152530Y1/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
KR2019920025776U 1992-12-17 1992-12-17 Surplus processing liquid drawing apparatus for lpcvd KR200152530Y1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR2019920025776U KR200152530Y1 (en) 1992-12-17 1992-12-17 Surplus processing liquid drawing apparatus for lpcvd

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR2019920025776U KR200152530Y1 (en) 1992-12-17 1992-12-17 Surplus processing liquid drawing apparatus for lpcvd

Publications (2)

Publication Number Publication Date
KR940017855U true KR940017855U (en) 1994-07-28
KR200152530Y1 KR200152530Y1 (en) 1999-07-15

Family

ID=19346892

Family Applications (1)

Application Number Title Priority Date Filing Date
KR2019920025776U KR200152530Y1 (en) 1992-12-17 1992-12-17 Surplus processing liquid drawing apparatus for lpcvd

Country Status (1)

Country Link
KR (1) KR200152530Y1 (en)

Also Published As

Publication number Publication date
KR200152530Y1 (en) 1999-07-15

Similar Documents

Publication Publication Date Title
DE69208480D1 (en) NUCLEATION MAGNIFICATION FOR CHEMICAL VAPOR DEPOSITION OF DIAMONDS
FR2707671B1 (en) Method and device for introducing precursors into a chemical vapor deposition chamber.
DE69312436T2 (en) Evaporation of liquid reactants for CVD
DE3379059D1 (en) Organometallic chemical vapour deposition of films
KR940017855U (en) Excess process liquid discharge device of low pressure chemical vapor deposition reactor
PT74429A (en) Device for the application of a liquid for the treatment or the destruction of plants
IT1283697B1 (en) PROCESS OF TREATMENT OF OBJECTS BY MEANS OF A FLAMMABLE VOLATILE LIQUID
GB8506478D0 (en) Plasma chemical vapour deposition apparatus
DE3664793D1 (en) Chemical vapor deposition method for the thin film of semiconductor
FI943184A0 (en) Plasma reactor for coating or etching process
KR970025781U (en) Liquid source thermostat of atmospheric pressure chemical vapor deposition equipment
KR970046657U (en) Reaction gas injection device of chemical vapor deposition equipment
KR940019721U (en) Vertical Low Pressure Chemical Vapor Deposition Reactor
KR940008658U (en) TWO-HOT-ZONE low pressure chemical vapor deposition system
KR940022678U (en) Reactor internal pressure regulator of atmospheric chemical vapor deposition equipment
KR940017860U (en) Plasma charge-up removal device of plasma chemical vapor deposition system
KR940027591U (en) Low pressure chemical vapor deposition system byproduct removal device
KR930022407U (en) Vacuum control device of low pressure chemical vapor deposition system
KR970046658U (en) Reaction gas injection device of chemical vapor deposition equipment
KR980005323U (en) Flange for process chamber of semiconductor low pressure chemical vapor deposition equipment
KR950025872U (en) Vertical plasma low pressure chemical vapor deposition system
KR960027782U (en) Low pressure chemical vapor deposition device
KR940023562U (en) Exhaust system of low pressure chemical vapor deposition equipment
KR890010267A (en) Gas supply system of low pressure chemical vapor deposition device for refractory metal
KR940001977U (en) Process monitoring device of plasma etching chamber

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E701 Decision to grant or registration of patent right
REGI Registration of establishment
FPAY Annual fee payment

Payment date: 20050318

Year of fee payment: 7

LAPS Lapse due to unpaid annual fee