KR940001501B1 - Attaching method between semiconductor - Google Patents
Attaching method between semiconductorInfo
- Publication number
- KR940001501B1 KR940001501B1 KR9102545A KR910002545A KR940001501B1 KR 940001501 B1 KR940001501 B1 KR 940001501B1 KR 9102545 A KR9102545 A KR 9102545A KR 910002545 A KR910002545 A KR 910002545A KR 940001501 B1 KR940001501 B1 KR 940001501B1
- Authority
- KR
- South Korea
- Prior art keywords
- semiconductor
- negative
- protection layer
- positive ion
- thin film
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
The method for bonding same or different semiconductors comprises the steps of: (a) growing a protection layer on a first and a second semiconductor; (b) depositing a positive ion type metal thin film of a bonding chemical semiconductor on the protection layer of the first semiconductor, but a negative one on the protection layer of the second one; (c) placing the second semiconductor upside down over the first semiconductor; and (d) heating the laminated semiconductor at which the temperature is higher than the positive ion type metal thin film, but lower than the negative one so that the chemical semiconductor is formed by the reaction between the solid state having negative ion and the liquid state having positive ion.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR9102545A KR940001501B1 (en) | 1991-02-13 | 1991-02-13 | Attaching method between semiconductor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR9102545A KR940001501B1 (en) | 1991-02-13 | 1991-02-13 | Attaching method between semiconductor |
Publications (2)
Publication Number | Publication Date |
---|---|
KR920017286A KR920017286A (en) | 1992-09-26 |
KR940001501B1 true KR940001501B1 (en) | 1994-02-23 |
Family
ID=19311174
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR9102545A KR940001501B1 (en) | 1991-02-13 | 1991-02-13 | Attaching method between semiconductor |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR940001501B1 (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100620451B1 (en) * | 2005-01-10 | 2006-09-11 | 삼성전자주식회사 | A metal oxidation alloy layer, method of manufacturing a metal oxidation alloy layer, and method of manufacturing a gate structure and a capacitor using the same |
-
1991
- 1991-02-13 KR KR9102545A patent/KR940001501B1/en not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
KR920017286A (en) | 1992-09-26 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
G160 | Decision to publish patent application | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 19971211 Year of fee payment: 5 |
|
LAPS | Lapse due to unpaid annual fee |