KR940001152A - Semiconductor memory device - Google Patents
Semiconductor memory device Download PDFInfo
- Publication number
- KR940001152A KR940001152A KR1019930009958A KR930009958A KR940001152A KR 940001152 A KR940001152 A KR 940001152A KR 1019930009958 A KR1019930009958 A KR 1019930009958A KR 930009958 A KR930009958 A KR 930009958A KR 940001152 A KR940001152 A KR 940001152A
- Authority
- KR
- South Korea
- Prior art keywords
- data
- memory cell
- cell arrays
- address
- pair
- Prior art date
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Classifications
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/409—Read-write [R-W] circuits
- G11C11/4096—Input/output [I/O] data management or control circuits, e.g. reading or writing circuits, I/O drivers or bit-line switches
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/408—Address circuits
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/409—Read-write [R-W] circuits
- G11C11/4091—Sense or sense/refresh amplifiers, or associated sense circuitry, e.g. for coupled bit-line precharging, equalising or isolating
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
- G11C7/1051—Data output circuits, e.g. read-out amplifiers, data output buffers, data output registers, data output level conversion circuits
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
- G11C7/1078—Data input circuits, e.g. write amplifiers, data input buffers, data input registers, data input level conversion circuits
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C8/00—Arrangements for selecting an address in a digital store
- G11C8/10—Decoders
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Databases & Information Systems (AREA)
- Dram (AREA)
Abstract
동적 랜덤 억세스 메모리 소자는 다수의 메로리 셀 어레이(21a/21b) 사이에서 고유된 데이타 라인쌍(D7)을 가지며, 열 어드레스 디코더 유니트 (22d)는 열 선택기중의 하나가 한 관련 비트 라인쌍을 공유된 데이타 라인쌍과 결합하게 함으로써, 데이타 라인쌍은 메모리 용량과 함께 증가되지 않는다.The dynamic random access memory element has a unique data line pair D7 among a plurality of memory cell arrays 21a / 21b, and the column address decoder unit 22d shares one associated bit line pair with one of the column selectors. By combining with a pair of data line pairs, the data line pairs do not increase with memory capacity.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.
제4도는 본 발명에 따른 동적 랜덤 억세스 메모리 소자의 배치를 도시한 블럭도.4 is a block diagram showing an arrangement of a dynamic random access memory device according to the present invention.
제5도는 본 발명에 따른 동적 랜덤 억세스 메모리 소자내에 포함된 열 어드레스 디코더 유니트의 배치를 도시한 논리도.5 is a logic diagram showing the arrangement of a column address decoder unit included in a dynamic random access memory element according to the present invention.
Claims (1)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4142806A JPH05331412A (en) | 1992-06-03 | 1992-06-03 | Coating composition |
JP92-142806 | 1992-06-03 | ||
JP4143879A JPH05342855A (en) | 1992-06-04 | 1992-06-04 | Semiconductor memory circuit |
JP92-143879 | 1992-06-04 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR940001152A true KR940001152A (en) | 1994-01-10 |
KR0133273B1 KR0133273B1 (en) | 1998-04-16 |
Family
ID=26474687
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019930009958A KR0133273B1 (en) | 1992-06-03 | 1993-06-03 | Semiconductor memory device |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR0133273B1 (en) |
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1993
- 1993-06-03 KR KR1019930009958A patent/KR0133273B1/en not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
KR0133273B1 (en) | 1998-04-16 |
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