KR930005029A - Internal power step-down circuit - Google Patents

Internal power step-down circuit Download PDF

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Publication number
KR930005029A
KR930005029A KR1019920015653A KR920015653A KR930005029A KR 930005029 A KR930005029 A KR 930005029A KR 1019920015653 A KR1019920015653 A KR 1019920015653A KR 920015653 A KR920015653 A KR 920015653A KR 930005029 A KR930005029 A KR 930005029A
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KR
South Korea
Prior art keywords
current
power supply
internal power
circuit
transistors
Prior art date
Application number
KR1019920015653A
Other languages
Korean (ko)
Other versions
KR960011956B1 (en
Inventor
도시오 고무로
Original Assignee
세기모또 다다히로
니뽄 덴끼 가부시끼 가이샤
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Application filed by 세기모또 다다히로, 니뽄 덴끼 가부시끼 가이샤 filed Critical 세기모또 다다히로
Publication of KR930005029A publication Critical patent/KR930005029A/en
Application granted granted Critical
Publication of KR960011956B1 publication Critical patent/KR960011956B1/en

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only
    • H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
    • G05F1/10—Regulating voltage or current
    • G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
    • G05F1/462—Regulating voltage or current wherein the variable actually regulated by the final control device is dc as a function of the requirements of the load, e.g. delay, temperature, specific voltage/current characteristic
    • G05F1/465—Internal voltage generators for integrated circuits, e.g. step down generators
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/26—Current mirrors
    • G05F3/262—Current mirrors using field-effect transistors only
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K5/00—Manipulating of pulses not covered by one of the other main groups of this subclass
    • H03K5/22—Circuits having more than one input and one output for comparing pulses or pulse trains with each other according to input signal characteristics, e.g. slope, integral
    • H03K5/24—Circuits having more than one input and one output for comparing pulses or pulse trains with each other according to input signal characteristics, e.g. slope, integral the characteristic being amplitude
    • H03K5/2472—Circuits having more than one input and one output for comparing pulses or pulse trains with each other according to input signal characteristics, e.g. slope, integral the characteristic being amplitude using field effect transistors
    • H03K5/249—Circuits having more than one input and one output for comparing pulses or pulse trains with each other according to input signal characteristics, e.g. slope, integral the characteristic being amplitude using field effect transistors using clock signals

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Automation & Control Theory (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
  • Static Random-Access Memory (AREA)
  • Continuous-Control Power Sources That Use Transistors (AREA)

Abstract

내용 없음.No content.

Description

내부 전원 강압 회로Internal power step-down circuit

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제1도는 본 발명의 제1실시예를 설명하기 위한 내부 전원 강압 회로도,1 is an internal power supply step-down circuit diagram for explaining a first embodiment of the present invention,

제2도는 제1도에 도시하는 내부 전원 강압 회로를 사용하는 반도체 메모리 장치를 도시하는 회로도.FIG. 2 is a circuit diagram showing a semiconductor memory device using the internal power supply step down circuit shown in FIG.

Claims (7)

전류 미러 앰프와, 상기 전류 미러 앰프의 출력을 게이트에 받고 그 드레인이 출력단에 접속되어 있는 드라이브 트랜지스터와, 상기 전류 미러 앰프와 직렬로 접속되며 제어 신호에 따라서 상기 전류 미러 앰프에 흐르는 전류량을 제어하는 전류 리미터 수단을 갖는 내부 전원 강압 회로.A current mirror amplifier, a drive transistor whose output is received at a gate thereof and whose drain is connected to an output terminal, and connected in series with the current mirror amplifier, control the amount of current flowing through the current mirror amplifier in accordance with a control signal. Internal power supply step down circuit with current limiter means. 제1항에 있어서, 상기 전류 리미터 수단은 병렬로 배치된 복수의 트랜지스터로 적도 2종류의 제어 신호중의 어느 하나가 게이트에 공급되는 내부 전원 강압 회로.The internal power supply step down circuit according to claim 1, wherein the current limiter means is a plurality of transistors arranged in parallel, and one of two control signals of the equator is supplied to the gate. 제1항에 있어서, 상기 전류 리미터 수단은 1개의 트랜지스터로 구성되며 상기 제어 신호가 적어도 3개의 레벨로 변화하는 신호인 내부 전원 강압 회로.The internal power supply down circuit as claimed in claim 1, wherein said current limiter means is a signal composed of one transistor and said control signal changes to at least three levels. 제1항에 있어서, 상기 리미터 수단은 상기 출력단에 접속되어 있는 차단의 회로의 동작 개시에서부터 소정의 시간이 경과된 후에 그 전류량이 소정의 전류량으로 감소하는 내부 전원 강압 회로.The internal power supply step down circuit according to claim 1, wherein the limiter means decreases the amount of current to a predetermined amount of current after a predetermined time has elapsed from the start of operation of the circuit of the shutoff circuit connected to the output terminal. 제4항에 있어서, 상기 차단의 회로는 센스 앰프 구동 회로인 내부 전원 강압 회로.The internal power supply step down circuit according to claim 4, wherein the circuit for blocking is a sense amplifier driving circuit. 제4항에 있어서, 상기 제어 신호는 복수의 신호이며, 상기 소정 시간 경과 후에 적어도 1개의 신호가 변화하는 내부 전원 강압 회로.The internal power supply down circuit according to claim 4, wherein the control signal is a plurality of signals, and at least one signal changes after the predetermined time elapses. 전류 미로 회로와 상기 전류 미러 회로에 흐르는 전류량을 제어하는 복수의 전류 리미터 트랜지스터로 적어도 2종류의 활성화 신호중의 어느 것이 게이트에 공급되는 병렬로 배치된 복수의 트랜지스터와, 상기 전류 미러 회로와 상기 복수의 전류 리미터 트랜지스터 사이에 설치된 차동대를 구성하는 제1및 제2의 트랜지스터와, 상기 전류 미러 회로의 출력을 게이트에 받고 전원과 출력단자 사이에 설치된 드라이브 트랜지스터(3)를 포함하고, 출력단이 상기 제1의 트랜지스터 (1)의 게이트에 접속되며 기준 전압이 상기 제2의 트랜지스터 (2)의 게이트에 공급되는 내부 전원 강압 회로.A plurality of current limiter transistors for controlling the amount of current flowing through the current maze circuit and the current mirror circuit, a plurality of transistors arranged in parallel to which any one of at least two kinds of activation signals are supplied to a gate; and the current mirror circuit and the plurality of transistors. First and second transistors constituting a differential band provided between the current limiter transistors, and a drive transistor (3) provided between a power supply and an output terminal receiving an output of the current mirror circuit at a gate, and an output terminal of the first and second transistors. An internal power supply step-down circuit connected to the gate of the transistor (1) of 1 and supplied with a reference voltage to the gate of the second transistor (2). ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019920015653A 1991-08-30 1992-08-29 Internal source voltage down circuit KR960011956B1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP91-244853 1991-08-30
JP3244853A JPH0562481A (en) 1991-08-30 1991-08-30 Semiconductor memory

Publications (2)

Publication Number Publication Date
KR930005029A true KR930005029A (en) 1993-03-23
KR960011956B1 KR960011956B1 (en) 1996-09-06

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019920015653A KR960011956B1 (en) 1991-08-30 1992-08-29 Internal source voltage down circuit

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US (1) US5451897A (en)
JP (1) JPH0562481A (en)
KR (1) KR960011956B1 (en)

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SG54603A1 (en) * 1996-12-13 1998-11-16 Texas Instruments Inc Current limiting circuit and method that may be shared among different circuitry
JPH10228770A (en) * 1997-02-14 1998-08-25 Mitsubishi Electric Corp Semiconductor integrated circuit
DE19713832C1 (en) * 1997-04-03 1998-11-12 Siemens Ag Input amplifier for input signals with steep edges
US6232824B1 (en) 1999-05-14 2001-05-15 Mitsubishi Denki Kabushiki Kaisha Semiconductor device capable of suppressing transient variation in level of internal power supply potential
JP2002157882A (en) * 2000-11-20 2002-05-31 Mitsubishi Electric Corp Semiconductor memory
CN1398031A (en) * 2001-07-16 2003-02-19 松下电器产业株式会社 Mains
JP3874247B2 (en) * 2001-12-25 2007-01-31 株式会社ルネサステクノロジ Semiconductor integrated circuit device
KR100452319B1 (en) * 2002-05-10 2004-10-12 삼성전자주식회사 internal voltage down converter and internal voltage controlling method in semiconductor memory device
US7180363B2 (en) * 2004-07-28 2007-02-20 United Memories, Inc. Powergating method and apparatus
JP2012099199A (en) * 2010-11-05 2012-05-24 Elpida Memory Inc Semiconductor device and method for controlling the same
EP2649725A4 (en) 2010-12-10 2016-11-02 Marvell World Trade Ltd Fast power up comparator
JP5727211B2 (en) 2010-12-17 2015-06-03 ピーエスフォー ルクスコ エスエイアールエルＰＳ４ Ｌｕｘｃｏ Ｓ．ａ．ｒ．ｌ． Semiconductor device
AR113306A1 (en) 2017-10-03 2020-04-08 Ag Leader Tech CONTROLLED AIR IMPULSE DOSING APPARATUS FOR AN AGRICULTURAL SEED DRILL AND RELATED SYSTEMS AND METHODS
US11523554B2 (en) 2019-01-25 2022-12-13 Ag Leader Technology Dual seed meter and related systems and methods
US11877530B2 (en) 2019-10-01 2024-01-23 Ag Leader Technology Agricultural vacuum and electrical generator devices, systems, and methods

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Publication number Publication date
JPH0562481A (en) 1993-03-12
KR960011956B1 (en) 1996-09-06
US5451897A (en) 1995-09-19

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