KR930002661B1 - Oxide nitride film silicon manufacturing apparatus using vertical lpcvd method and method thereof - Google Patents
Oxide nitride film silicon manufacturing apparatus using vertical lpcvd method and method thereof Download PDFInfo
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- 238000000034 method Methods 0.000 title claims description 15
- 238000004519 manufacturing process Methods 0.000 title claims description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims description 3
- 229910052710 silicon Inorganic materials 0.000 title claims description 3
- 239000010703 silicon Substances 0.000 title claims description 3
- 150000004767 nitrides Chemical class 0.000 title description 2
- 239000007789 gas Substances 0.000 claims abstract description 22
- 230000008021 deposition Effects 0.000 claims abstract description 14
- 239000012535 impurity Substances 0.000 claims abstract description 3
- 239000002245 particle Substances 0.000 claims abstract description 3
- 239000004065 semiconductor Substances 0.000 claims abstract description 3
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 28
- 238000000151 deposition Methods 0.000 claims description 19
- 229910020286 SiOxNy Inorganic materials 0.000 claims description 18
- 229910052760 oxygen Inorganic materials 0.000 claims description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 5
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- -1 Si 3 N 4 Inorganic materials 0.000 claims description 2
- 238000001914 filtration Methods 0.000 claims description 2
- 239000012495 reaction gas Substances 0.000 claims description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 claims 2
- 230000003068 static effect Effects 0.000 claims 1
- 238000005137 deposition process Methods 0.000 abstract 1
- 239000010408 film Substances 0.000 description 19
- 239000010410 layer Substances 0.000 description 11
- 238000006243 chemical reaction Methods 0.000 description 8
- 238000005001 rutherford backscattering spectroscopy Methods 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 241000293849 Cordylanthus Species 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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Abstract
Description
첨부된 도면은 본 발명의 구성도이다.The accompanying drawings are schematic diagrams of the present invention.
* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings
1 : 유입량조절기 2 : 표시메터1: Inflow regulator 2: Indicator
3 : 수직 리액터 4 : 여과기3: vertical reactor 4: filter
5 : 압력조절기 6 : 볼밸브5: pressure regulator 6: ball valve
7 : 니들밸브 8 : 노멀 오픈밸브7: Needle Valve 8: Normal Open Valve
9 : 노멀 클로우즈밸브 10 : 역방향 방지밸브9: Normal close valve 10: Reverse check valve
11 : 표시계기 12 : 압력스위치11: indicator 12: pressure switch
13, 14 : 펌프13, 14: pump
본 발명은 수직 LPCVD(Low Presure ChemicaI Vapor Deposition)법을 이용한 질산화막 실리콘 제조장치 및 방법에 관한 것으로, 특히 CVD-SiO2, Si3N4, SiOxNy 필름층을 한 리액터(Reactor) 내에서 증착할 수 있게 함은 물론 SiO2/Si3N4및 SiO2/Si3N4/SiO2의 멀티층(Multilayer) 증착도 가능하도록 되어 있다.The present invention relates to an apparatus and a method for manufacturing silicon nitride film by using a vertical low-precision chemica I vapor deposition (LPCVD) method. In particular, a CVD-SiO 2 , Si 3 N 4 , SiOxNy film layer is deposited in a reactor. In addition to this, it is also possible to deposit multilayers of SiO 2 / Si 3 N 4 and SiO 2 / Si 3 N 4 / SiO 2 .
일반적으로 수직 LPCVD 장비로 SiOxNy층을 증착시킬 수 있는 장치는 존재하지 않으며 단지 고온산화막(SiO2)을 증착시킬 수 있는 장치와 실리콘 질화막(Si3N4)을 증착시킬 수 있는 장치가 각각 사용되고 있다.In general, there is no device capable of depositing SiOxNy layer by vertical LPCVD equipment, and only a device capable of depositing high temperature oxide film (SiO 2 ) and a device capable of depositing silicon nitride film (Si 3 N 4 ) are used, respectively. .
즉, 고온 산화막을 증착시키는 장치의 경우 화학반응식은That is, in the case of a device for depositing a high temperature oxide film, the chemical reaction formula is
SiH2Cl2+2N2O→SiO2+2N2+2HC1SiH 2 Cl 2 + 2N 2 O → SiO 2 + 2N 2 + 2HC1
로 이루어지며 이때의 온도조건은 840-860℃이고, 압력(P)은 1.2토르이었다.At this time, the temperature condition is 840-860 ℃, pressure (P) was 1.2 Torr.
또 실리콘 질화막을 증착시키는 장치의 경우 화학반응식은In the case of a device for depositing a silicon nitride film,
3SiH2C12+4NG3→Si3N4+6H2+6HC13SiH 2 C1 2 + 4NG 3 → Si 3 N 4 + 6H 2 + 6HC1
로 이루어지며 이때의 온도조절은 700-800℃이고 압력(P)은 0.3토르이었다.At this time, the temperature control was 700-800 ℃ and the pressure (P) was 0.3 torr.
상기와 같이 LPCVD-SiO2및 LPCVD-Si3N4장치는 각각 사용되고 있는 실정이고 실리콘 산화질화막 및 SiO2/Si3N4, SiO2/Si3N4/SiO2의 멀티층 증착을 할 수 있는 장치는 아직 개발되지 않고 있는 실정이다.As described above, the LPCVD-SiO 2 and LPCVD-Si 3 N 4 devices are in use, respectively, and are capable of multilayer deposition of silicon oxynitride and SiO 2 / Si 3 N 4 , SiO 2 / Si 3 N 4 / SiO 2 . There is a device that is not yet developed.
결국 종래에는 SiO2와 Si3N4의 중간성질을 갖는 SiOxNy공정을 이용하지 못했으며 멀티층 증착을 필요로 하는 경우 SiO2와 Si3N4의 두 공정을 진행하기가 어려웠다.As a result, the conventional SiOxNy process having an intermediate property of SiO 2 and Si 3 N 4 has not been used, and it is difficult to proceed with two processes of SiO 2 and Si 3 N 4 when multi-layer deposition is required.
본 발명은 상기와 같은 점에 착안하여 수직 LPCVD법을 이용한 SiOxNy 제조장치 및 방법을 제공하기위한 것으로 이하에서 본 발명의 실시예를 첨부된 도면을 참고로 하여 상세히 설명하면 다음과 같다.The present invention is to provide a SiOxNy manufacturing apparatus and method using a vertical LPCVD method in the light of the above point will be described in detail below with reference to the accompanying drawings an embodiment of the present invention.
먼저 첨부된 도면은 본 발명을 구형하기 위한 장치의 구성도로 N2SiH2Cl2, N2O, NH3가스의 유입량을 조절하기 위한 유입량 조절기(1), 유입량을 표시하기 위한 유입량 표시 베터(2), 반도체 웨이퍼가 넣어진 상태에서 상기 가스가 주입되어 반응하는 수직리액터(3)와, 파티클 및 불순물을 여과시키기 위한 여과기(4), 수직리액터(3)내의 압력을 조절하기 위한 압력조절기(5), 볼밸브(6), 니들밸브(7), 전원 온시 밸브가오픈상태가 되는 노멀 오픈밸브(8), 전원 온시 밸브가 클로우즈 상태가 되는 노멀 클로우즈 밸브(9), 역방향으로 가스가 흐르는 것을 방지하기 위한 역방향 방지밸브(10), 수직리액터(3)내의 압력을 표시하는 계기(11), 일정한 압력이상이 될 때 자동적으로 클로우즈 되는 압력스위치(12), 정압유지용 펌프(13), 압력을낮추기 위한 펌프(14)로 구성되어 있다.Drawing first the accompanying flow rate regulator (1), flow rate display Better (2) for displaying a flow rate to control the flow rate of the configuration of an apparatus for sentence of the invention road N 2, SiH 2 Cl 2, N2O, NH 3 gas And a vertical reactor (3) in which the gas is injected and reacted with a semiconductor wafer inserted therein, a filter (4) for filtering particles and impurities, and a pressure regulator (5) for adjusting pressure in the vertical reactor (3). Ball valve (6), needle valve (7), normal open valve (8) in which valve is opened when power is on, normal close valve (9) in which valve is closed when power is on, and gas flow in the reverse direction Reverse pressure valve (10), a gauge (11) indicating the pressure in the vertical reactor (3), a pressure switch (12) which is automatically closed when the pressure is above a certain pressure, the pressure maintaining pump (13), Consists of a
이와 같은 장치에 의해 구현되는 본 발명의 반응식은 화학반응과 물리적으로 SiO2와 Si3N4가 결합된 형태에 따른 물리적 반응으로 분리하여 나타낼 수 있으며 화학반응은 다음과 같이 나타낼 수 있다.The reaction scheme of the present invention implemented by such a device can be separated into a chemical reaction and a physical reaction according to the physical form of SiO 2 and Si 3 N 4 are physically separated, and the chemical reaction can be expressed as follows.
ASiH2C12+ BN2O +CNH3→D(SiOxNy) + BN2+-H2+2AHC1ASiH 2 C1 2 + BN 2 O + CNH 3 → D (SiOxNy) + BN 2 + -H 2 + 2AHC1
(여기서 A, B, D, X, Y는 자연수, C는 2의 배수인 자연수)Where A, B, D, X, and Y are natural numbers, and C is a natural number that is a multiple of 2.
예로는For example
3SiH2C12+N2O+2NH3→Si3OlN2+N2+3H2+6HCl3SiH 2 C1 2 + N 2 O + 2NH 3 → Si 3 O l N 2 + N 2 + 3H 2 + 6HCl
4SiH2Cl2+2N2O + 2NH3→Si4O2N2+2N2+3H2+8HCl4SiH 2 Cl 2 + 2N 2 O + 2NH 3 → Si 4 O 2 N 2 + 2N 2 + 3H 2 + 8HCl
5SiH2C12+3N2O+2NH3→Si5O3N2+3N2+3N2+10HCl5SiH 2 C1 2 + 3N 2 O + 2NH 3 → Si 5 O 3 N 2 + 3N 2 + 3N 2 + 10HCl
물리적 반응으로는Physical reaction
에서 형성된 SiO2와SiO 2 formed from
에서 형성된 SIⓠ N4가 물리적으로 결합된 형태로 구성되어 있을 수도 있다.SIⓠ N 4 formed at may be formed in a physically bonded form.
즉, 800℃ 정도에서는 ②식에 의한 반응이 활발하여 라더포드 백스 케터링(Rutherford Back Scattering : RBS) 장비로 측정하여 보면 O/N값이 상당히 작음을 측정할 수 있었다.That is, at about 800 ° C., the reaction according to the equation (2) was active, and the O / N value was found to be considerably small when measured with a Rutherford Back Scattering (RBS) device.
또한 840℃ 정도에서는 ①식과 ②식의 반응이 거의 이동하여 O/N값이 1에 가까운 값을 보였으며, 820℃에서 라더포드 백 스케터링 장비로 측정한 O/N값은 N2O/NH3의 가스비에 비례하는데 그 값은 O/N=0.05×(N2O/NH3)+0.l5 식을 따르면서 리니어(Linear)하게 변함을 알 수 있다.Also, at about 840 ℃, the reactions of equations (1) and (2) almost moved, showing an O / N value close to 1, and the O / N value measured by the Rutherford Back Scattering Equipment at 820 ° C was N 2 O / NH. It is proportional to the gas ratio of 3 , and the value changes linearly by following the equation O / N = 0.05 × (N 2 O / NH 3 ) +0.15.
이하, 본 장치를 사용하여 SiO2와 Si3N4의 중간 성질을 갖는 SiOxNy를 제조하기 위한 실시예를 설명하면 다음과 같다.Hereinafter, an embodiment for manufacturing SiOxNy having an intermediate property of SiO 2 and Si 3 N 4 using the present apparatus will be described.
먼저, 증착하고자 하는 웨이퍼를 보우트(BOAT)에 채워 수직 리액터(3) 내의 튜브에 넣는다. 그리고 천천히 튜브안의 공기를 빼내어 듀브 내부를 진공상태로 만든 상태에서 펌핑하던 문을 닫고 리크(LEAK)가 있는지 확인한다. 다시 펌핑을 하여 리크 체크 스텝 중 미량 흘러 들어온 공기를 뺀다.First, the wafer to be deposited is filled in a BOAT and placed in a tube in the
또한, 증착시 유입량 조절기(1-1c)와 압력조절기(5)를 사용하여 가스량과 압력조건을 맞추는데 이때 반응가스로는 SiH2C12, N2O, NH3를 사용하고 증착 온도는 750℃-850℃, 증착압력은 0.1-0.5토르를 사용하며, N2O/NH3의 압력 가스비에 따라 SiOxNy의 산소와 질소량을 조절할 수 있다.In addition, the gas flow rate and pressure conditions are adjusted by using the inflow regulator (1-1c) and the pressure regulator (5) during deposition. In this case, SiH 2 C1 2 , N 2 O, NH 3 is used as the reaction gas, and the deposition temperature is 750 ° C.- 850 ℃, the deposition pressure is used 0.1-0.5 torr, the amount of oxygen and nitrogen of SiOxNy can be adjusted according to the pressure gas ratio of N 2 O / NH 3 .
즉, SiOxNy의 x,y값을 변화시킴에 따라 SiO2성질, Si3N4성질 SiO2와 Si3N4의 중간 성질값을 갖게 할 수 있다.That is, by changing the x, y values of SiO x N y, it is possible to have an intermediate property value of SiO 2 property, Si 3 N 4 property SiO 2 and Si 3 N 4 .
이와같이 증착 가스량과 압력조건이 맞추어지면 튜브안을 안정화시키고 증착전에 붙필요한 N2가스를 뺀다. 그리고 SiH2C12와 NH3는 소량, N2O는 원하는 양까지 펌프(RAMP)하면서 흐르도록 밸브를 조절한다.In this way, when the deposition gas volume and pressure conditions are matched, the tube is stabilized and the N 2 gas required before deposition is removed. Then, the valve is controlled so that SiH 2 C1 2 and NH 3 flow in small amounts and N 2 O flows to the desired amount.
다음에 SiH2C12는 원하는 양까지 램프하면서 흐르고 N2O는 원하는 양이 흐르며 NH3는 소량 흐르도록 밸브를 조절한다. 다음에 SiH2C12와 N2O는 원하는 양이 흐르고 NH3는 원하는 양까지 램프하면서 튜브내로 흐르도록 밸브를 조절한다. 다음에 SiH2C12, N2O, NH3가 원하는 양으로 흐르도록 밸브를 조절한다.SiH 2 C1 2 then ramps to the desired amount, N 2 O flows the desired amount and NH 3 adjusts the valve so that a small amount flows. The valves are then adjusted so that SiH 2 C1 2 and N 2 O flow in the desired amount and NH 3 flows into the tube while ramping to the desired amount. The valve is then adjusted to allow SiH 2 C1 2 , N 2 O, NH 3 to flow in the desired amount.
그리고 튜브와 가스 라인 내부의 잔존 가스를 빼고 N2가스를 램프시키면서 튜브내로 넣고 튜브내부를 씻는다. 다음에 튜브내의 N2가스를 빼고 다시 N2가스를 천천히 튜브내로 유입시켜 튜브내의 압력을 1기압에 이르도록 하고 튜브내가 1기압으로 안정되도록 시간을 가진 후 웨이퍼가 채워진 보우트를 튜브아래로내려 보우트에서 웨이퍼를 빼낸다.Then, the remaining gas inside the tube and the gas line is removed, and the N 2 gas is lamped into the tube and the inside of the tube is washed. Next, the N 2 gas in the tube is removed and the N 2 gas is slowly introduced into the tube so that the pressure in the tube reaches 1 atm and the tube is stabilized at 1 atm. Pull the wafer out of
한편, 본 발명에 의하면 SiOxNy/Si3N4, SiOxNy/SiO2, SiO2/SiOxNy SiO2/SiOxNy/SiO2등의 멀티층증착시 이를 인터페이스의 오염없이 한 리액터 내에서 동시에 실시할 수 있다. 이와같은 멀티층 증착 방법은 상기 SiOxNy의 제조방법과 거의 같으나 예를들어 SiOxNy/Si3N4멀티층의 경우 SiH2C12, N2O, NH3를 원하는 양으로 흘린 상태에서 SiH2C12는 원하는 양을 튜브내로 흘리고, N2O는 가스 흐름을 멈추고,NH3는 원하는 양을 튜브내로 흘리되 원하는 두께에 따라 시간을 변경하는 일련의 공정을 추가로 실시하는것이 다르다.Meanwhile, according to the present invention, when multi-layer deposition of SiOxNy / Si 3 N 4 , SiOxNy / SiO 2 , SiO 2 / SiOxNy SiO 2 / SiOxNy / SiO 2, and the like, it can be simultaneously performed in one reactor without contamination of the interface. This multi-layer deposition method is almost the same as the method for producing SiOxNy, but for example, in the case of SiOxNy / Si 3 N 4 multi-layer SiH 2 C1 2 , N 2 O, NH 3 in a state in which the desired amount of SiH 2 C1 2 Is a further series of processes that flow the desired amount into the tube, N 2 O stops the gas flow, NH 3 flows the desired amount into the tube, but changes the time according to the desired thickness.
상기와 같은 본 발명에 따르면 고온 산화막을 단일층으로 증착시킬 때 LTO(Low Temperature Oxide), TEOS-산화막 보다 막특성이 우수하며 열산화막과 유사한 성질을 갖어 절연층이나 캡핑(Capping) 산화막, 측벽 산화막 제조시 응용이 가능하다.According to the present invention as described above, when the high-temperature oxide film is deposited as a single layer, it has better film characteristics than the low temperature oxide (LTO) and the TEOS-oxide film and has properties similar to those of the thermal oxide film, so that the insulating layer, the capping oxide film, and the sidewall oxide film are Application in manufacturing is possible.
또한 Si3N4을 단일층으로 증착시킬 때 선택된 산화막을 형성하기 위한 마스크층이나 박막 커패시터층 혹은 Ga에 대한 확산 마스크로 응용이 가능하다. 한편, SiOxNy의 경우 N2O/NH3의 입력가스비에 따라 막내에 산소, 질소 양의 조절이 가능하여 층간 증착이나 멀티층 증착에 응용할 수 있다.In addition, when Si 3 N 4 is deposited as a single layer, it can be applied as a mask layer, a thin film capacitor layer, or a diffusion mask for Ga to form a selected oxide film. On the other hand, in the case of SiOxNy it is possible to control the amount of oxygen and nitrogen in the film according to the input gas ratio of N 2 O / NH 3 It can be applied to interlayer deposition or multi-layer deposition.
다시 말해서 본 발명의 장치를 사용할 경우 한 공간(Chamber)내에서 동시에 박막 커패시터층의 증착이 가능하고 베이스 산화막/실리콘 질화막 공정에서 베이스 산화막 대신에 SiO2/'SiOxNyr 사용이 가능함과 아울러 Si3N4대신 SiOxNy/Si3N4의 사용이 가능하여 새부리형상(Bird's Beak) 효과를 줄일 수 있으며, 게이트 산화막으로 사용시 SiO2대신에 SiO2/SiOxNy를 사용하므로써 게이트 산화막의 특성을 개선시킬 수있고 질화막 형성공정과 산화막 형성공정을 한 공정으로 실시 가능한 장점이 있다.In other words, when the device of the present invention is used, it is possible to simultaneously deposit a thin film capacitor layer in one chamber, and use SiO 2 / 'SiOxNyr instead of the base oxide in the base oxide / silicon nitride film process and Si 3 N 4. instead, it allows the use of SiOxNy / Si 3 N 4 saeburi shape (Bird's Beak) may reduce the effectiveness, by using using the SiO 2 / SiOxNy, instead of SiO 2 as a gate oxide film can improve the properties of the gate oxide film and nitride film formation There is an advantage that the process and the oxide film forming process can be carried out in one process.
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| WO2000017412A1 (en) * | 1998-09-21 | 2000-03-30 | Commissariat A L'energie Atomique | Method for treating, by nitriding, a silicon substrate for forming a thin insulating layer |
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