KR920022496A - Device Separation Method of Semiconductor Device - Google Patents
Device Separation Method of Semiconductor Device Download PDFInfo
- Publication number
- KR920022496A KR920022496A KR1019910009059A KR910009059A KR920022496A KR 920022496 A KR920022496 A KR 920022496A KR 1019910009059 A KR1019910009059 A KR 1019910009059A KR 910009059 A KR910009059 A KR 910009059A KR 920022496 A KR920022496 A KR 920022496A
- Authority
- KR
- South Korea
- Prior art keywords
- oxide film
- semiconductor substrate
- nitride film
- device isolation
- region
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims 6
- 238000000926 separation method Methods 0.000 title 1
- 238000002955 isolation Methods 0.000 claims description 5
- 238000000034 method Methods 0.000 claims description 3
- 150000004767 nitrides Chemical class 0.000 claims 6
- 239000000758 substrate Substances 0.000 claims 5
- 150000002500 ions Chemical class 0.000 claims 4
- 230000000903 blocking effect Effects 0.000 claims 3
- 238000010790 dilution Methods 0.000 claims 3
- 239000012895 dilution Substances 0.000 claims 3
- 230000003647 oxidation Effects 0.000 claims 2
- 238000007254 oxidation reaction Methods 0.000 claims 2
- 230000003213 activating effect Effects 0.000 claims 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Element Separation (AREA)
Abstract
내용 없음.No content.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.
제2(A)∼(D)도는 이 발명에 따른 소자분리를 나타내는 공정도이다.2 (A) to (D) are process drawings showing device isolation according to the present invention.
Claims (3)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019910009059A KR930010110B1 (en) | 1991-05-31 | 1991-05-31 | Isolating method of semiconductor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019910009059A KR930010110B1 (en) | 1991-05-31 | 1991-05-31 | Isolating method of semiconductor |
Publications (2)
Publication Number | Publication Date |
---|---|
KR920022496A true KR920022496A (en) | 1992-12-19 |
KR930010110B1 KR930010110B1 (en) | 1993-10-14 |
Family
ID=19315295
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019910009059A KR930010110B1 (en) | 1991-05-31 | 1991-05-31 | Isolating method of semiconductor |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR930010110B1 (en) |
-
1991
- 1991-05-31 KR KR1019910009059A patent/KR930010110B1/en not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
KR930010110B1 (en) | 1993-10-14 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR920015603A (en) | Method of forming isolation film for semiconductor device | |
KR920022496A (en) | Device Separation Method of Semiconductor Device | |
KR970072295A (en) | Method for forming a separation film of a semiconductor element | |
KR920010752A (en) | Method of forming isolation film for semiconductor device | |
KR920020636A (en) | Manufacturing process of semiconductor device | |
KR960026558A (en) | Device Separating Method of Semiconductor Device | |
KR930005159A (en) | Device Separation Method of Semiconductor Memory Device | |
KR920015612A (en) | Device isolation method of semiconductor device | |
KR930003366A (en) | Device Separation Method of Semiconductor Device | |
KR970054268A (en) | Manufacturing Method of Semiconductor SOH Element | |
KR980005881A (en) | Method of manufacturing semiconductor device | |
KR920008923A (en) | Device isolation region formation method of semiconductor integrated circuit | |
KR970003520A (en) | Contact hole formation method of a fine semiconductor device | |
KR920015592A (en) | LDD structure transistor manufacturing method | |
KR920013600A (en) | Method of forming planar isolation region of semiconductor device | |
KR920013673A (en) | Device isolation method of semiconductor device | |
KR980006105A (en) | Semiconductor memory device and manufacturing method thereof | |
KR920010947A (en) | Morse Device Isolation Method | |
KR920015602A (en) | Isolation Method of Moss Device | |
KR980005619A (en) | Method of forming a contact hole in a semiconductor device | |
KR920010827A (en) | Device isolation method of semiconductor device | |
KR970052319A (en) | Self-aligned contact formation method of semiconductor device | |
KR950021352A (en) | Semiconductor Device Separation Method | |
KR950021396A (en) | Field oxide film manufacturing method | |
KR910016099A (en) | Dual gate transistor manufacturing method |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
G160 | Decision to publish patent application | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20010906 Year of fee payment: 9 |
|
LAPS | Lapse due to unpaid annual fee |