KR920017462A - 고체영상장치 - Google Patents
고체영상장치 Download PDFInfo
- Publication number
- KR920017462A KR920017462A KR1019920001750A KR920001750A KR920017462A KR 920017462 A KR920017462 A KR 920017462A KR 1019920001750 A KR1019920001750 A KR 1019920001750A KR 920001750 A KR920001750 A KR 920001750A KR 920017462 A KR920017462 A KR 920017462A
- Authority
- KR
- South Korea
- Prior art keywords
- charge
- signal charge
- transfer means
- sensor
- signal
- Prior art date
Links
- 239000007787 solid Substances 0.000 title claims description 6
- 238000003384 imaging method Methods 0.000 title claims description 5
- 230000008878 coupling Effects 0.000 claims 4
- 238000010168 coupling process Methods 0.000 claims 4
- 238000005859 coupling reaction Methods 0.000 claims 4
- 238000006243 chemical reaction Methods 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14831—Area CCD imagers
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
내용 없음
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명에 의한 고체영상장치에서 CCD구성분기단위를 표시하는 블록도,
제2도는 서로 병렬로 배열되고 그리고 감도, 동적영역등을 가지는 3개 신호전하 감지기를 포함하는 종래의 고체영상장치를 표시하는 약도,
제3도는 부동확산 증폭기가 신호전하 감지에 사용되는 고체영상장치의 그의 인접회로도, 신호전하감지기의 구성을 표시하는 도면,
제4도는 본 발명에 따른 고체영상장치의 다른 CCD구성분기 단위를 표시.
Claims (2)
- 광선을 받고 그리고 상기 광선을 신호전하로 변환하는 광전변환수단과, 상기 신호전하를 받고 그리고 상기 신호전하를 상기 전하전송수단의 단부에 상기 신호전하를 전송하는 전하전송수단과, 다른 특성을 가지는 복수의 신호전하감지기와, 상기 신호전하감지기의 상기 전하전송수단의 상기 단부에 전송되는 상기 신호전하를 감지하고, 그리고 상기 복수의 신호전하 감지기에서 사용조건이 맞는 특성을 가지는 한 신호전하감지기를 선택하고 그리고 전하전송수단의 상기 단부에서 상기 선택된 신호전하감지기에 인도하는 신호전하전송로를 형성하는 CCD구성분기단위를 포함하는 고체영상장치.
- 제1항에 있어서, 상기 전하전송수단은 행으로 배열되는 수직전하 결합장치와 상기 수직전하 결합장치에 접속되는 수평전하 결합장치를 포함하고, 그리고 상기 전하전송수단의 상기 단부는 상기 수평전하 결합장치의 단부인 고체영상장치.※ 참고사항 : 최초출원 내용에 의하여 공개되는 것임.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3017493A JPH04256292A (ja) | 1991-02-08 | 1991-02-08 | 固体撮像装置 |
JP91-17493 | 1991-02-08 | ||
JP91-017493 | 1991-02-08 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR920017462A true KR920017462A (ko) | 1992-09-26 |
KR950008709B1 KR950008709B1 (ko) | 1995-08-04 |
Family
ID=11945530
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019920001750A KR950008709B1 (ko) | 1991-02-08 | 1992-02-07 | 고체영상장치 |
Country Status (5)
Country | Link |
---|---|
US (1) | US5225695A (ko) |
EP (1) | EP0498664B1 (ko) |
JP (1) | JPH04256292A (ko) |
KR (1) | KR950008709B1 (ko) |
DE (1) | DE69231261T2 (ko) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2949861B2 (ja) * | 1991-01-18 | 1999-09-20 | 日本電気株式会社 | Ccdリニアイメージセンサ |
JPH05167936A (ja) * | 1991-12-13 | 1993-07-02 | Sony Corp | 固体撮像装置 |
JP3482689B2 (ja) * | 1994-05-27 | 2003-12-22 | ソニー株式会社 | 固体撮像装置及びこれを用いたバーコード読取り装置 |
JPH08298626A (ja) * | 1995-04-26 | 1996-11-12 | Nec Corp | 固体撮像素子 |
US5600696A (en) * | 1995-10-11 | 1997-02-04 | David Sarnoff Research Center, Inc. | Dual-gain floating diffusion output amplifier |
CA2334908A1 (en) | 1998-06-12 | 1999-12-16 | Avery Dennison Corporation | Multilayered thermoplastic film and sign cutting method using the same |
JP4090389B2 (ja) * | 2003-06-10 | 2008-05-28 | 株式会社日立製作所 | 核磁気共鳴装置 |
US7075049B2 (en) | 2003-06-11 | 2006-07-11 | Micron Technology, Inc. | Dual conversion gain imagers |
JP4988075B1 (ja) * | 2010-12-16 | 2012-08-01 | パナソニック株式会社 | 撮像装置及び画像処理装置 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4567524A (en) * | 1982-08-13 | 1986-01-28 | Rca Corporation | Smear reduction in CCD imagers using empty well clocking |
NL8204727A (nl) * | 1982-12-07 | 1984-07-02 | Philips Nv | Ladingsoverdrachtinrichting. |
JPS6249653A (ja) * | 1985-08-29 | 1987-03-04 | Toshiba Corp | 電荷転送装置 |
GB2203916B (en) * | 1987-03-10 | 1991-02-06 | Rank Cintel Ltd | Improved ccd sensor |
JPH01106676A (ja) * | 1987-10-20 | 1989-04-24 | Mitsubishi Electric Corp | 固体イメージセンサ |
-
1991
- 1991-02-08 JP JP3017493A patent/JPH04256292A/ja active Pending
-
1992
- 1992-02-07 EP EP92301043A patent/EP0498664B1/en not_active Expired - Lifetime
- 1992-02-07 KR KR1019920001750A patent/KR950008709B1/ko not_active IP Right Cessation
- 1992-02-07 US US07/831,209 patent/US5225695A/en not_active Expired - Lifetime
- 1992-02-07 DE DE69231261T patent/DE69231261T2/de not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
EP0498664A1 (en) | 1992-08-12 |
KR950008709B1 (ko) | 1995-08-04 |
JPH04256292A (ja) | 1992-09-10 |
DE69231261D1 (de) | 2000-08-24 |
US5225695A (en) | 1993-07-06 |
EP0498664B1 (en) | 2000-07-19 |
DE69231261T2 (de) | 2000-12-21 |
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Payment date: 20060725 Year of fee payment: 12 |
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LAPS | Lapse due to unpaid annual fee |