KR920010835A - Contact hole formation method of MOS device - Google Patents

Contact hole formation method of MOS device Download PDF

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Publication number
KR920010835A
KR920010835A KR1019900018358A KR900018358A KR920010835A KR 920010835 A KR920010835 A KR 920010835A KR 1019900018358 A KR1019900018358 A KR 1019900018358A KR 900018358 A KR900018358 A KR 900018358A KR 920010835 A KR920010835 A KR 920010835A
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KR
South Korea
Prior art keywords
photoresist
contact hole
forming
film
mos device
Prior art date
Application number
KR1019900018358A
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Korean (ko)
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KR930006133B1 (en
Inventor
이준석
Original Assignee
문정환
금성일렉트론 주식회사
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Priority to KR1019900018358A priority Critical patent/KR930006133B1/en
Publication of KR920010835A publication Critical patent/KR920010835A/en
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Publication of KR930006133B1 publication Critical patent/KR930006133B1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268

Abstract

내용 없음No content

Description

모스소자의 콘택트홀 형성방법Contact hole formation method of MOS device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제2도는 본 발명의 공정 단면도.2 is a cross-sectional view of the process of the present invention.

Claims (4)

기판위에 통상의 방법으로 필드산화막 및 게이트를 형성하는 단계, 전체적으로 BPSG막을 형성하고 이 위에 하층감광제로서 평탄화용 폴리머막과 상층감광제로서 음성감광제막을 차례로 형성하는 단계, 상층감광제인 음성 감광제막에만 포토/에치 공정을 실시하여 콘택트 마스크를 형성하는 단계, 상기 콘택트 마스크에 알루미늄막을 원하는 소정의 각도로 선택증착하는 단계, 이 알루미늄막을 마스크로 알루미늄이 증착되지 않은 부분의 하부막만을 건식에치하여 콘택트홀을 형성하는 단계가 차례로 포함됨을 특징으로 하는 모스소자의 콘택트홀 형성방법.Forming a field oxide film and a gate on a substrate in a conventional manner, forming a BPSG film as a whole, and then forming a polymer film for planarization as a lower layer photoresist and a negative photoresist layer as an upper photoresist; Performing an etch process to form a contact mask; selectively depositing an aluminum film on the contact mask at a desired angle; dry etching only the lower layer of the portion where aluminum is not deposited using the aluminum film as a mask to form a contact hole Forming a contact hole of the MOS device, characterized in that it comprises a step in turn. 제1항에 있어서, 상층감광제인 음성감광제와 하층감광제인 평탄화용 폴리머 두께는 각각 약 0.5㎛이상으로 함을 특징으로 하는 모스소자의 콘택트홀 형성방법.The method of claim 1, wherein the thickness of the negative photoresist, the upper photoresist, and the planarization polymer, the lower photoresist, are each about 0.5 µm or more. 제1항에 있어서, 알루미늄막 증착시 증착각도는 약 10∼170°범위의 것으로 하고 증착두께는 약 0.01∼0.3㎛범위의 것으로 함을 특징으로 하는 모스소자의 콘택트홀 형성방법.The method of claim 1, wherein the deposition angle is in the range of about 10 to 170 ° and the deposition thickness is in the range of about 0.01 to 0.3 μm. 제1항에 있어서, 상층감광제인 음성감광제의 각 패턴간의 최단거리는 약 2㎛로 함을 특징으로 하는 모스소자의 콘택트홀 형성방법.The method according to claim 1, wherein the shortest distance between the patterns of the negative photoresist, which is the upper photoresist, is about 2 m. ※ 참고사항 : 최초출원 내용에 의하여 공개되는 것임.※ Note: This is to be disclosed by the original application.
KR1019900018358A 1990-11-13 1990-11-13 M.o.s. contact hole forming method KR930006133B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019900018358A KR930006133B1 (en) 1990-11-13 1990-11-13 M.o.s. contact hole forming method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019900018358A KR930006133B1 (en) 1990-11-13 1990-11-13 M.o.s. contact hole forming method

Publications (2)

Publication Number Publication Date
KR920010835A true KR920010835A (en) 1992-06-27
KR930006133B1 KR930006133B1 (en) 1993-07-07

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019900018358A KR930006133B1 (en) 1990-11-13 1990-11-13 M.o.s. contact hole forming method

Country Status (1)

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KR (1) KR930006133B1 (en)

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Publication number Publication date
KR930006133B1 (en) 1993-07-07

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