KR920005718Y1 - Ultra-violet exposing apparatus for photo-chemical deposition apparatus - Google Patents

Ultra-violet exposing apparatus for photo-chemical deposition apparatus Download PDF

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KR920005718Y1
KR920005718Y1 KR2019880022172U KR880022172U KR920005718Y1 KR 920005718 Y1 KR920005718 Y1 KR 920005718Y1 KR 2019880022172 U KR2019880022172 U KR 2019880022172U KR 880022172 U KR880022172 U KR 880022172U KR 920005718 Y1 KR920005718 Y1 KR 920005718Y1
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lamp
ultraviolet
gas
transmission window
exposure apparatus
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KR2019880022172U
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KR900013453U (en
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김호영
김윤태
이영수
김보우
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한국전기통신공사
이해욱
재단법인 한국전자통신 연구소
경상현
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70016—Production of exposure light, i.e. light sources by discharge lamps
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70883—Environment aspects, e.g. pressure of beam-path gas, temperature of optical system
    • G03F7/70891—Temperature

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  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Atmospheric Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

내용 없음.No content.

Description

광화학 증착장치용 자외선 노광장치UV exposure device for photochemical vapor deposition

제1도는 본 고안이 이용되는 광화학 반응장치의 예시도.1 is an exemplary view of a photochemical reaction apparatus using the present invention.

제2도는 본 고안의 주요부분품을 분해한 사시도.2 is an exploded perspective view of the main parts of the present invention.

제3도는 본 고안의 자외선 노광장치의 조립 단면도.3 is an assembled cross-sectional view of the ultraviolet exposure apparatus of the present invention.

제4도는 자외선램프의 광세기에 대한 자외선광의 파장을 나타낸 그래프.4 is a graph showing the wavelength of ultraviolet light against the light intensity of the ultraviolet lamp.

제5도는 웨이퍼면의 자외광분포도.5 is an ultraviolet light distribution diagram of a wafer surface.

* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings

110 : 아르곤가스노즐 120 : 자외선매쉬110: argon gas nozzle 120: ultraviolet mesh

130 : 자외선투과창 150 : 램프하우징130: UV transmission window 150: lamp housing

160 : 진공플랜지 180 : 냉각가스입구160: vacuum flange 180: cooling gas inlet

본 고안은 반도체 고집적회로의 제조공정중 산화규소(SiO2)와 질화규소(Si3N4)박막을 비롯한 모든 반도체관련 박막을 증착시키는 광화학증착장치(Photo-CVD)에 있어서 특히 반도체 기판상에 반응가스를 광에너지가 높은 자외선으로 분해시킬수 있는 자외선 노광장치에 관한 것이다.The present invention particularly reacts on semiconductor substrates in the photo-CVD apparatus for depositing all semiconductor-related thin films including silicon oxide (SiO 2 ) and silicon nitride (Si 3 N 4 ) thin films during the manufacturing process of semiconductor integrated circuits. The present invention relates to an ultraviolet exposure apparatus capable of decomposing gas into ultraviolet rays having high light energy.

반도체용 박막을 기판(웨이퍼)위에 증착시키는 공정으로는 열화학증착과 광화학증착의 두 종류가 있으나 전자의 실리콘(Si)이나 갈륨비소(GaAs)기판상에 이산화규소(SiO2), 질화규소(Si3N4)등의 절연박막이나 텅스텐등의 도전성박막을 수백℃에서의 열화학반응에 의해 원료가스를 분해하여 증작시키는 열화학증착의 단점인 고온공정을 개선하기 위해 주로 광화학 증착공정을 사용하고 있으며 이 광학증착은 광에너지가 큰 자외선광을 이용하는 공정이기 때문에 자외선 노광장치의 설계 및 제작이 가장 중요하다.There are two kinds of processes for depositing a thin film for semiconductors on a substrate (wafer), but thermal chemical vapor deposition and photochemical vapor deposition, but silicon dioxide (SiO 2 ) and silicon nitride (Si 3 ) on an electron silicon (Si) or gallium arsenide (GaAs) substrate. The photochemical deposition process is mainly used to improve the high temperature process, which is a disadvantage of thermochemical deposition in which an insulating thin film such as N 4 ) or a conductive thin film such as tungsten is decomposed and expanded by a thermochemical reaction at several hundred degrees Celsius. Since deposition is a process using ultraviolet light having a large light energy, the design and manufacture of an ultraviolet exposure apparatus is the most important.

따라서 본 고안의 목적은 동일 출원인이 선출원한(특허출원 제88-11867호) 광화학반응로에 적합하도록 저압수은램프 진공자외선에 의한 자외선 노광장치를 제공하는데 있다.Accordingly, an object of the present invention is to provide an ultraviolet exposure apparatus using a low pressure mercury lamp vacuum ultraviolet ray to be suitable for a photochemical reactor previously filed by the same applicant (Patent Application No. 88-11867).

이하 본 고안의 실시예를 첨부도면에 의거 상세히 설명한다.Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.

제1도는 본 고안에 이용되는 광화학반응로의 전체를 도시한 것으로 본 고안의 자외선노광장치는 하나의 모듈로 반응로(A)상단에 고정볼트(100)에 의해 장착되어 착탈가능하게 되어있다.1 is a view showing the entire photochemical reactor used in the present invention, the UV exposure apparatus of the present invention is detachably mounted by a fixing bolt 100 at the top of the reactor A as a module.

제2도 및 제3도는 본 고안에 의한 자외선노광장치의 조립 단면도와 주요부분품의 분해 사시도이다.2 and 3 are exploded perspective views of the assembled cross-sectional view and the main parts of the ultraviolet exposure apparatus according to the present invention.

자외선노광장치는 반도체 공정중 반응실의 공정가스가 위로 확산되지 않도록 아르곤가스노즐(110)로 부터 아르곤가스를 불어넣어 균일하게 분사하도록 한 자외선메쉬(120)상측으로 자외선의 효율적인 투과를 위하여 185mm이하의 단파장을 투과 시킬 수 있는 특수석영재질의 자외선투과창(130)을 설치하고 이 자외선투과창의 도어 플레이트(140)상에 램프하우징(150)을 플랜지 결합하여 반응로(A)와 자외선노광장치를 분리시킨다.The ultraviolet exposure apparatus is 185 mm or less for efficient transmission of ultraviolet rays to the upper side of the ultraviolet mesh 120 which blows argon gas uniformly from the argon gas nozzle 110 so that the process gas of the reaction chamber does not diffuse upward during the semiconductor process. Install the UV transmission window 130 of the special quartz material that can transmit the short wavelength of the lamp and flange the lamp housing 150 on the door plate 140 of the UV transmission window to connect the reactor A and the UV exposure device. Isolate.

또한 185nm의 진공자외선은 산소가스에 흡수가 많이되기 때문에 저압수은램프(210)를 진공상자인 상기 램프하우징(150)내에 설치하고 독립적인 배기구로서 하우징 측면에 진공플랜지(160)를 부착하여 반응로의 가동중에 항상 진공을 유지하도록 되어 있다.In addition, since 185 nm vacuum ultraviolet rays are absorbed by oxygen gas, a low pressure mercury lamp 210 is installed in the lamp housing 150 which is a vacuum box, and a vacuum flange 160 is attached to the side of the housing as an independent exhaust port. The vacuum is always maintained during operation.

상기한 저압수은탬프(210)는 광화학반응에 접합하도록 저압수은의 공명복사를 이용한 185nm의 진공자외선광이 발광하도륵 설계 제작하여 제4도와 같은 발광특성을 갖도록 한다.The low pressure mercury stamp 210 is designed to produce a 185nm vacuum ultraviolet light using a low pressure mercury resonance radiation to be bonded to the photochemical reaction to have a light emission characteristic as shown in FIG.

또 램프하우징에 세팅시킨 램프톱카바(170)에는 냉각가스입구(180)가 부설되어 이것을 통하여 자외선 반응로의 냉각을 위한 가스가 주입되며 저압수은램프(210)에 전력을 공급하는 엘렉트리칼 피드 드루우(electrical feedthrough) (181)가 있다.In addition, a cooling gas inlet 180 is installed in the lamp top cover 170 set in the lamp housing, through which gas for cooling the ultraviolet reactor is injected, and an electric feed supplying power to the low pressure mercury lamp 210. There is an electrical feedthrough 181.

아울러 랩프톱카바(170)이면에 상기한 자외선램프(210)의 복사광을 효율적으로 이용할 수 있게 자외선반사경(190)이 설치된다.In addition, the ultraviolet reflector 190 is installed on the bottom of the wrap top cover 170 so as to efficiently use the radiant light of the ultraviolet lamp 210.

상기 자외선반사경(190)의 재질은 185nm에서 반사율이 좋은 알루미늄거울을 사용하고 그 표면에는 냉각가스의 분출이 가능한 가스구멍(191)이 무수히 천공되어 있으며 이들의 입구(192) 및 출구(193)는 램프하우징(150)의 톱카바에 있는 냉각가스입구(180)를 통해 요입면(170a)과 상기 가스구멍(191)을 거쳐 분사되어 램프를 냉각시킨다.The material of the ultraviolet reflector 190 is an aluminum mirror having a good reflectance at 185 nm, and the gas holes 191 capable of ejecting cooling gas are perforated innumerably on the surface thereof, and the inlet 192 and the outlet 193 are It is injected through the inlet surface 170a and the gas hole 191 through the cooling gas inlet 180 in the top cover of the lamp housing 150 to cool the lamp.

그리고 또 냉각수가 순환되도록 가스구멍 사이사이에 냉각수관(194)이 내부에 관통되어 있다.The cooling water pipe 194 penetrates between the gas holes so as to circulate the cooling water.

또한 램프톱카바(170)에는 발광특성뿐만 아니라 기판(웨이퍼)위에서 제5도와 같은 균일한 조도분포를 갖도륵 램프 마운트(200)에 규칙적인 분할핀(201)을 설치하여 저압수은램프(210)의 위치를 변화시킴으로써 기판상의 광화학반응균일도의 개선이 가능한 것이다.In addition, the lamp top cover 170 has regular light emission characteristics as well as a uniform illuminance distribution on the substrate (wafer). By changing the position, it is possible to improve the photochemical reaction uniformity on the substrate.

즉, 상기 저압수은램프(210)의 양단부위가 직사각형태이어서 램프마운트(200)의 규칙적으로 배열된 분할핀(201)에 삽입하여 장착하는 것으로, 반응균일도의 향상을 위한 저압수은램프(210)의 재배열과 교환시에 상기분할핀(201)에서 재장착 및 교환이 가능한 것이다.That is, since both ends of the low pressure mercury lamp 210 are rectangular in shape, the low pressure mercury lamp 210 is inserted into the split pins 201 regularly arranged in the lamp mount 200 to reduce reaction uniformity of the low pressure mercury lamp 210. It is possible to remount and exchange in the split pin 201 at rearrangement and exchange.

이때, 저압수은램프(200)의 위치 및 간격은 상기 분할핀(201)의 갯수에 의해 임의로 조절가능하다.At this time, the position and spacing of the low pressure mercury lamp 200 is arbitrarily adjustable by the number of the split pin 201.

이상의 실시예에 의하면 본 고안의 저압수은램프를 사용한 자외선노광장치는 고정볼트에 의해 반응로와의 조립과 분해가 용이하고 램프마운트에 가설된 자외선램프의 교환이 쉽다.According to the above embodiment, the UV exposure apparatus using the low pressure mercury lamp of the present invention is easy to assemble and disassemble with the reactor by the fixing bolt and to replace the UV lamp installed on the lamp mount.

또한 알루미늄거울의 자외선반사경을 이용하여 기판상에서의 반응가스의 분해효율을 증대시킬 수 있고 자외선반사경표면으로 부터의 냉각가스분출과 냉각수 순환에 의해 노광장치뿐만 아니라 광화학 반응로 자체를 냉각시키는 효과를 얻을 수 있으며 발광파장이 185nm이하이기 때문에 반도체용 박막증착의 원료가스인 NH3, N2O, O2, CO2, Si2H6, PH3, B2H6, Al(CH3)3, W(CO)6, Mo(CO)6, HCl등이 분해가능하며 각종 절연박막 및 금속박막등을 증착시킬 수 있는 특징이 있는 것이다.In addition, it is possible to increase the decomposition efficiency of the reaction gas on the substrate by using the ultraviolet reflector of the aluminum mirror and to cool not only the exposure apparatus but also the photochemical reactor itself by circulating coolant gas and cooling water from the surface of the ultraviolet reflector. Since the emission wavelength is less than 185nm, the raw material gas for thin film deposition for semiconductors is NH 3 , N 2 O, O 2 , CO 2 , Si 2 H 6 , PH 3 , B 2 H 6 , Al (CH 3 ) 3 , W (CO) 6 , Mo (CO) 6 , HCl, etc. are degradable and have the characteristics of depositing various insulating thin films and metal thin films.

Claims (2)

185nm에서 투과율이 우수한 특수석영으로 제작하여 반응로와 자외선노광장치를 분리시키며 도어플레이트(140)상에 위치하는 자외선투과창(130)과, 상기 자외선투과창에 박막의 증착을 방지하도록 가스를 반응로도 분출하기 위해 상기 자외선투과창의 하부 일측편의 구비된 아르곤가스노즐(110)및 자외선매쉬(120)와, 상기자외선투과창(130)의 도어플레이트(140)와 플랜지에 결합되는 진공상자형의 램프하우징(150)과, 상기한 램프하우징의 램프톱카바(170)의 상면에 부설한 냉각가스입구(180)와, 상기 램프톱카바의 저부에 분할핀(201)이 형성되어 램프의 위치를 변화시킬 수 있도록 부착되는 복수의 분할핀(201)이 형성된 램프마운트(200)와, 상기램프마운트의 분할핀(201)사이에 채결되어 진공 자외선광이 방출되는 저압수은램프(210)와, 상기 자외선램프의 복사광을 이용하기 위해 상기 램프마운트(200)의 안쪽에 고정되는 자외선반사경(190)를 포함하는 것을 특징으로 하는 광화학 증착장치용 자외선노광장치.It is made of special quartz having excellent transmittance at 185nm to separate the reactor and the UV exposure device, and the UV transmission window 130 positioned on the door plate 140 and the gas react to prevent the deposition of a thin film on the UV transmission window. Argon gas nozzle 110 and the UV mesh 120 of the lower one side of the UV transmission window and a vacuum box-type coupled to the door plate 140 and the flange of the UV transmission window 130 to eject the furnace The lamp housing 150, the cooling gas inlet 180 provided on the upper surface of the lamp top cover 170 of the lamp housing, and the split pin 201 are formed at the bottom of the lamp top cover to change the position of the lamp. A low pressure mercury lamp 210 is formed between a lamp mount 200 having a plurality of split pins 201 attached to each other, a split pin 201 of the lamp mount to emit vacuum ultraviolet light, and a Radiant light Ultraviolet exposure apparatus for a photochemical deposition apparatus, characterized in that it comprises an ultraviolet reflector (190) fixed to the inside of the lamp mount for use. 제1항에 있어서, 상기 자외선반사경(190)은 표면에 냉각가스의 분출이 가능한 가스구멍(191)과 상기 가스구멍(179)의 입구(192)와 출구(193)가 구비되고, 측면에 냉각수의 순환을 위해 안쪽으로 관통된 냉각수관(194)이 구성된 것을 특징으로 하는 광화학 증착장치용 자외선 노광장치.According to claim 1, The ultraviolet reflector 190 is provided with a gas hole 191 capable of ejecting the cooling gas on the surface and the inlet 192 and the outlet 193 of the gas hole 179, the cooling water on the side Ultraviolet light exposure apparatus for a photochemical deposition apparatus, characterized in that the cooling water pipe 194 penetrated inward for the circulation of the.
KR2019880022172U 1988-12-30 1988-12-30 Ultra-violet exposing apparatus for photo-chemical deposition apparatus KR920005718Y1 (en)

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KR920005718Y1 true KR920005718Y1 (en) 1992-08-20

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101233059B1 (en) * 2005-06-22 2013-02-13 액셀리스 테크놀로지스, 인크. Apparatus and process for treating dielectric materials

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101233059B1 (en) * 2005-06-22 2013-02-13 액셀리스 테크놀로지스, 인크. Apparatus and process for treating dielectric materials

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