Claims (3)
LPCVD(Low Pressure Chemical Vapor Deposition)법을 이용한 산화-질화-산화막 연속형성방법에 있어서, 스토리지폴리실리콘(storage polysilicon) 공정을 거친 기판을 런(RUN)하여 튜브내로 로딩시키는 로딩공정과, 튜브내의 공기를 배출시키는 저속 및 고속펌핑고정, 상기 튜브내를 세정액으로 세정하는 세정공정, 상기 튜브내에 N2O를 주입하여 튜브내를 N2O분위기로 만드는 N2O분위기조성공정, 상기 N2O를 램핑하는 가스램핑공정, 산화막을 형성하는 고온산화공정, 상기 튜브내의 잔류가스를 배출하는 잔류가스배출공정, 상기 튜브내의 온도를 질화막형성에 적합한 온도로 낮추어 주는 열다운공정, 상기 튜브내에 NH3를 주입하여 튜브내를 NH3분위기로 만드는 NH3분위기조성공정, 질화막을 형성하는 질화막형성공정, 백필절연(Backfill Isolate)하고 상기 튜브내의 압력을 상압으로 만드는 백필절연공정 및 산화-질화-산화막이 형성된 반도체를 튜브로부터 언로딩하는 언로딩공정으로 이루어진 LPCVD법을 이용한 산화-질화-산화막 연속형성공정.In the oxidative-nitride-oxide film continuous formation method using LPCVD (Low Pressure Chemical Vapor Deposition) method, a loading process in which a substrate subjected to a storage polysilicon process is run and loaded into a tube, and air in the tube Low speed and high speed pumping fixing to discharge the gas, a cleaning process for cleaning the inside of the tube with a cleaning liquid, an N 2 O atmosphere forming process for making the inside of the tube N 2 O atmosphere by injecting N 2 O into the tube, and the N 2 O A gas ramping process for ramping, a high temperature oxidation process for forming an oxide film, a residual gas discharge process for discharging residual gas in the tube, a heat-down process for lowering the temperature in the tube to a temperature suitable for forming a nitride film, and NH 3 in the tube. nitride film forming process for injection to form a NH 3 atmosphere process, the nitride film to make the tube with NH 3 atmosphere, backfill isolated (backfill Isolate) and a pressure in the tube An oxidative-nitride-oxide film continuous formation process using the LPCVD method comprising a backfill insulation process made at atmospheric pressure and an unloading process of unloading a semiconductor on which an oxide-nitride-oxide film is formed from a tube.
제1항에 있어서, 가열고정과 고속펌핑공정, N2O분위기조성공정, 가스램핑공정, 고온산화공정 및 잔류가스배출공정은 기저산화막인 제1산화막 형성공정과 제2산화막 형성공정에서 모두 거치는 공정임을 특징으로 하는 LPCVD법을 이용한 산화-질화-산화막 연속형성방법.The method of claim 1, wherein the heating, fast pumping, N 2 O atmosphere forming process, gas ramping process, high temperature oxidation process, and residual gas discharge process are carried out in both the first oxide film forming process and the second oxide film forming process as the base oxide film. Oxide-nitride-oxide film continuous formation method using the LPCVD method characterized in that the process.
제2항에 있어서, 잔류가스배출공정은 N2O를 포스트(POST)하는 N2O포스트과정과 튜브내의 잔류가스를 고속으로 배출하는 고속펌핑과정, 튜브내를 세정액으로 세정하는 세정과정 및 고속펌핑과정을 거치는 공정임을 특징으로 LPCVD법을 이용한 산화-질화-산화막 연속형성방법.The method of claim 2, wherein the residual gas discharge process is a high speed pumping process, a cleaning process for cleaning the tube with washing liquid to discharge the residual gas in the N 2 O Post (POST) N 2 O post-process and the tube of high-speed and high-speed Oxidation-nitride-oxide film continuous formation method using the LPCVD method characterized in that the pumping process.
※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임※ Note: The disclosure is based on the initial application.