KR920004211B1 - Sintered aluminum nitride body having high thermal conductivity and its production - Google Patents

Sintered aluminum nitride body having high thermal conductivity and its production Download PDF

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Publication number
KR920004211B1
KR920004211B1 KR1019890001363A KR890001363A KR920004211B1 KR 920004211 B1 KR920004211 B1 KR 920004211B1 KR 1019890001363 A KR1019890001363 A KR 1019890001363A KR 890001363 A KR890001363 A KR 890001363A KR 920004211 B1 KR920004211 B1 KR 920004211B1
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South Korea
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thermal conductivity
aluminum nitride
ain
sintered body
high thermal
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KR1019890001363A
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Korean (ko)
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KR890013759A (en
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아끼라 야마가와
마사야 미야께
히도유끼 사까노우에
히사오 다께우찌
고오이찌 소가베
아끼라 사사메
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스미도모덴기고오교오 가부시기가이샤
나까하라 쯔네오
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Abstract

내용 없음.No content.

Description

고열전도성 질화 알루미늄 소결체 및 그 제조법High thermal conductivity aluminum nitride sintered body and its manufacturing method

제 1 도는 본 발명의 A1N 소결체가 고열전도율을 나타내는 것을 표시한 실시예 2의 설명도.BRIEF DESCRIPTION OF THE DRAWINGS Explanatory drawing of Example 2 which showed that the A1N sintered compact of this invention shows high thermal conductivity.

제 2 도는 본 발명에 의한 A1N 소결체의 전형적인 결정조직을 표시한 소결체파단면의 현미경사진.2 is a micrograph of a sintered fractured section showing a typical crystal structure of an A1N sintered body according to the present invention.

제 3 도는 본 발명의 제조법으로 균일혼합할 수 있는 것에 대한 설명개념도.3 is an explanatory conceptual view of what can be uniformly mixed by the production method of the present invention.

* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings

1 : Y2O30.6wt%, 0.7wt%의 경우의 입도(粒度)와 열전도율의 변화를 표시한 선도1: Graph showing the change of particle size and thermal conductivity at 0.6 wt% and 0.7 wt% Y 2 O 3

2 : Y2O30.3wt, C 0.7wt%의 경우의 입도와 열선도율의 변화를 표시한 선도2: A graph showing the change in particle size and thermal conductivity in the case of Y 2 O 3 0.3wt, C 0.7wt%

3 : 본 발명의 범위 4 : A1N 입자3: Scope of the Invention 4: A1N Particles

5 : 소결조제입자5: sintering aid particle

본 발명은 질화 알루미늄 소결체 및 그 제조방법에 관한 것으로서, 보다 상세하게는 치밀질이고 열전도성, 절연성, 유전율등의 제특성에 뛰어난 A1N 소결체에 관한 것이다.The present invention relates to an aluminum nitride sintered body and a manufacturing method thereof, and more particularly, to an A1N sintered body which is dense and excellent in various properties such as thermal conductivity, insulation, and dielectric constant.

최근의 LSI의 진보는 눈부시고, 집적도의 향상이 현저하다. 이것에는, IC 칩사이즈의 향상도 기여하고 있으며, IC 칩사이즈의 향상에 수반하여 패키지당의 발열량이 증대하고 있다. 이 때문에 기판재료의 방열성이 중요시되게 되었다. 또, 종래 IC 기판으로서 사용되고 있는 알루미나 소결체의 열전도율로서는 방열성이 불충분하고, IC 칩의 발열량의 증대에 대응할 수 없게 되어가고 있다. 이 때문에 알루미나 기판을 대신하은 것으로서, 고열전도성의 벨리리아 기판이 검토되고 있으나, 벨리리아는 독성이 강하고 취급이 어렵다고 하는 결점이 있다.Recent advances in LSI are remarkable, and the improvement in density is remarkable. This also contributes to the improvement of the IC chip size, and the amount of heat generated per package is increasing with the improvement of the IC chip size. For this reason, the heat dissipation of the board | substrate material became important. Moreover, heat conductivity is inadequate as the thermal conductivity of the alumina sintered compact currently used as an IC board | substrate, and it is becoming unable to cope with the increase of the heat generation amount of an IC chip. For this reason, as a replacement for an alumina substrate, a high thermal conductivity Velia substrate has been studied. However, the Velia has a disadvantage of being toxic and difficult to handle.

질화 알루미눔(AIN)은, 본래, 재질적으로 고열전도성, 고절연성을 가지고, 독성도 없기 때문에, 반도체 공업에 있어서 절연재료 혹은 패키지재료로서 주목을 모으고 있다.Aluminum nitride (AIN) has attracted attention as an insulating material or a package material in the semiconductor industry because it has high thermal conductivity, high insulating property, and no toxicity.

상술한 바와 같이 질화 알루미늄은 이론적으로는 단결정으로서는 고열전도성, 고절연성을 가진 재료이다. 그러나, 질화 알루미늄 분말로부터 소결체를 제조하는 경우, 질화 알루미늄 분말자체의 소결성이 좋지 않기 때문에, 분말성형후, 소결해서 얻게되는 질화 알루미늄 소결체의 상대밀도(질화 알루미늄의 이론밀도 3.26g/㎠을 기준으로 함)는, 소결조건에도 따르지만, 고작 70∼80%밖에 나타내지 않고, 다량의 기공(氣孔)을 포함한다.As described above, aluminum nitride is theoretically a material having high thermal conductivity and high insulation as a single crystal. However, when the sintered compact is manufactured from aluminum nitride powder, since the sinterability of the aluminum nitride powder itself is not good, the relative density of the aluminum nitride sintered compact obtained by sintering after powder molding (based on the theoretical density of aluminum nitride 3.26 g / cm 2) Although also according to the sintering conditions, it represents only 70 to 80% and contains a large amount of pores.

한편, 질화알루미늄 소결체와 같은 절연성 세라믹의 열전도기구는, 포는 전도를 주체로 하기 때문에 기공, 불순물등의 결합은 포는 산란을 일으켜, 열전도성은 저레벨의 것밖에 얻을수 없다. 이들 상황에 대해서, 고열전도성 AIN 소결체를 얻기 위하여 여러가지의 제안이 이루어지고 있다.On the other hand, in a thermally conductive device of an insulating ceramic such as an aluminum nitride sintered body, since the fabric mainly contains conduction, bonding of pores, impurities, etc. causes scattering of the fabric, and thermal conductivity can only be obtained at a low level. For these situations, various proposals have been made to obtain a high thermally conductive AIN sintered body.

① AIN 분말에 소결조제 및 탈산제로서의 Y2O3를 첨가 소결하는 방법(예를들면 일본국 특개소 60-96578호).① Method of adding and sintering Y 2 O 3 as a sintering aid and deoxidizer to AIN powder (for example, Japanese Patent Application Laid-Open No. 60-96578).

② AIN 분말에 탄소를 첨가하고, 소결하므로서 탈산하여, 저산소의 소결체를 얻는 방법(예를들면 일본국 특개소 60-71576호, 동 61-155263호).(2) A method in which carbon is added to AIN powder and deoxidized by sintering to obtain a low oxygen sintered body (for example, Japanese Patent Application Laid-Open No. 60-71576, 61-155263).

③ 고순도 저산소의 AIN 분말을 사용하는 방법(예를들면 일본국 특개소 60-71575호, 동 60-127267호).③ Method of using high purity low oxygen AIN powder (eg Japanese Patent Application Laid-Open No. 60-71575, East 60-127267).

④ 소결체에 잔류하는 소결조제를 장시간의 환원분위기하에 노출시켜 제거한다(요업협회 1987년 년회예고집 P.969).(4) Remove the sintering aids remaining in the sintered body by exposing them under a reducing atmosphere for a long time (Annual Society of 1987, p. 969).

⑤ 소결체에 잔류하는 소결조제를 장시간의 환원분위기하에 노출시켜 제거한다(요업협회 1987년 년회예고집 P.969).(5) Remove the sintering aid remaining in the sintered body by exposing it to a reducing atmosphere for a long time (Preparation of the Society of Korea, p. 969, p. 969).

①의 방법의 경우, Y2O3를 첨가하고, 보올밀혼합을 행하지만, 고열전도의 치밀질소결체를 얻기 위해서는 Y2O3를 1중량% 이상의 첨가가 필요하다. 얻게 되는 소결체의 열전도율은 고작 200W이고, 소결체의 흐트러짐이 크고, 또한 다량의 Y2O3는 AIN 입자의 주위에 두꺼운 입계층(粒界層)을 형성하고, 내산화성이 낮고, 유전율이 높다는등 문제가 있다.In the method of (1), Y 2 O 3 is added and bowl milling is mixed. However, in order to obtain a high thermal conductivity dense sintered body, it is necessary to add 1% by weight or more of Y 2 O 3 . The thermal conductivity of the obtained sintered body is only 200W, the sintered body is largely disturbed, and a large amount of Y 2 O 3 forms a thick grain boundary layer around the AIN particles, has low oxidation resistance, high dielectric constant, etc. there is a problem.

②는 탄소의 탈산작용을 이용해서, AIN의 함유 산소량을 저감시키는 것을 목적으로 하고 있으나, 소결조제를 첨가시키지 않을 경우(일본국 특개소 60-71576호)에는, 소결체밀도가 낮고, 치밀화가 곤란하고, 열전도율도 80W/mK 정도로 낮다. 또 소결조제로서 Y2O3를 첨가(예를들면 일본국 특개소 61-155263호)해도 1% 이상 첨가하지 않으면 치밀화 하지 않는다.(2) aims to reduce the amount of oxygen contained in AIN by utilizing the deoxidation of carbon, but when the sintering aid is not added (Japanese Patent Laid-Open No. 60-71576), the sintered body density is low and densification is difficult. The thermal conductivity is as low as 80 W / mK. Further addition of Y 2 O 3 as a sintering aid (e.g. Japanese Patent No. 61-155263 portion) even if no densification is not added more than 1%.

③의 원료로서 고순도의 AIN 분말을 사용해도, 소결체의 산소량은 0.5% 이상이고 열전도율은 40W/mK 전도로 낮은(일본국 특개소 60-71575호)것 밖에 얻지 못한다. 3% 이상의 Y2O3를 첨가해도 70W/mK 정도이다(일본국 특개소 60-127267호). 즉, 소량의 소결조제의 첨가에 의한 AIN 소결체는, 낮은 열전도율 밖에 얻지 못하는 것이다.Even if high purity AIN powder is used as the raw material for ③, the oxygen content of the sintered body is 0.5% or more and the thermal conductivity is only low as 40W / mK conduction (Japanese Patent Laid-Open No. 60-71575). Even if 3% or more of Y 2 O 3 is added, it is about 70 W / mK (Japanese Patent Laid-Open No. 60-127267). That is, the AIN sintered compact by adding a small amount of sintering aid obtains only a low thermal conductivity.

한편, 다량의 소결조제를 첨가하여, 소결한 후 소결조제를 제거하는 방법 ④⑤에서는, 200W/mK를 초과하는 높은 열전도율이 달성되고, 유전율등도 개선되는 것으로 되어 있다. 그런데, 불화물을 첨가하고 소결조제를 제거하는 방법(일본국 특개소 62-41766호)에서는 소결로내 오염을 피할 수 없고, 또 소결체의 흐트러짐도 로트내 뿐 아니라, 동일 소결체에서도 큰 것이 된다, 또 소결체의 소결표면도 소결조제의 증발휘산에 수반하여 요철(凹凸)이 발생하고 가공없이는 사용할 수 없을 정도로 표면이 거칠게 된다. 환원분위기속에서 장시간 소결하는 방법으로서는, 소결코스트가 매우 높아질 뿐 아니라 소결체의 소결체의 소결표면에 소결조제가 편석(偏析)해서 소결표면 그대로 사용할 수 없는, 소결체내에서의 흐트러짐이 크다고 하는 문제가 있다.On the other hand, in the method (4) ⑤ in which a large amount of sintering aid is added and then sintered to remove the sintering aid, a high thermal conductivity exceeding 200 W / mK is achieved, and the dielectric constant and the like are also improved. By the way, in the method of adding fluoride and removing the sintering aid (Japanese Patent Laid-Open No. 62-41766), contamination in the sintering furnace cannot be avoided, and the sintered body is not only in the lot but also in the same sintered body. The sintered surface of the sintered body also has irregularities caused by the evaporation volatilization of the sintering aid, and the surface becomes rough so that it cannot be used without processing. As a method of sintering for a long time in a reducing atmosphere, there is a problem that not only the sintering cost is very high but also that the sintering aid is segregated on the sintered surface of the sintered body of the sintered body, and that the sintered surface in the sintered body cannot be used as it is. .

본 발명은 이제까지의 여러가지 기술문제를 해결한 고순도, 고밀도 그리고 고열전도성의 AIN소결체에 과한 것이다. 즉, 본 발명은 AIN 입계에 조제가 흔적정도밖에 존재하지 않고, 고밀도이고, 180W/mK 이상의 열전도율을 가진 AIN 세라믹을 여러가지 검토한 결과 얻게된 것이며, 특히 AIN 입계층이 균일하게 분포되면, AIN 표면자유 에너지를 감소시킬만큼의 물질에 의해, AIN 의 재결정이 진행되고, 고밀도, 고열전화하고, 소결체속의 불순물산소량도 0.5W/mK 이하로 할 수 있는 것을 발견한 것이다.The present invention is directed to AIN sintered bodies of high purity, high density and high thermal conductivity which solve various technical problems so far. In other words, the present invention is obtained by a variety of studies on the AIN ceramic having only a trace amount of the preparation in the AIN grain boundary, high density, thermal conductivity of 180W / mK or more, in particular, if the AIN grain boundary layer is uniformly distributed, It has been found that recrystallization of AIN advances, high density, high temperature conversion, and the amount of impurity oxygen in the sintered body can be 0.5 W / mK or less with a substance sufficient to reduce free energy.

본 발명의 소결체는 질화 알루미늄을 주성분으로 하고, 주기율표 Ⅲa족 원소가 0.01∼1.0중량%, 산소0.001∼0.5중량%로 이루어지고, 열전도율이 180W/mK 이상이다.The sintered compact of this invention consists of aluminum nitride as a main component, and it consists of 0.01-1.0 weight% of element IIIa of a periodic table, 0.001-0.5 weight% of oxygen, and thermal conductivity is 180 W / mK or more.

희토류원소가 0.01% 이하에서는 소결체의 치밀화가 곤란하고, 또 산소함유량이 크고, 고열전도의 소결체를 얻을 수 없다. 1.0중량% 이상에서는 소결체의 열전도는 200W/mK정도이지만, 유전율이 높고, 내산화성이 낮다고 하는 문제가 있다.If the rare earth element is 0.01% or less, the densification of the sintered compact is difficult, the oxygen content is large, and the sintered compact of high thermal conductivity cannot be obtained. At 1.0 wt% or more, the thermal conductivity of the sintered compact is about 200 W / mK, but there is a problem that the dielectric constant is high and the oxidation resistance is low.

종래 회토유원소가 1% 이상에서 치밀한 소결체라고 되어온 것은 Ⅲa족 원소가 통상 산화물, 수산화물등으로 첨가혼합되고, AIN 분말과 충분한 혼합이 달성되어 있지 않았기 때문이라고 생각된다. 본 발명에서는 스테아르산등 화합물의 형식으로 치밀입자를 첨가혼합함으로서, 1% 이하의 첨가소결조제에 의해 높은 열전도율을 가진 고밀도소결을 얻은 것이라고 생각된다.It is considered that the conventional clay soil element is a compact sintered compact at 1% or more because the group IIIa element is usually added and mixed with oxides, hydroxides, etc., and sufficient mixing with the AIN powder has not been achieved. In the present invention, it is thought that high density sintering having high thermal conductivity is obtained by addition-mixing dense particles in the form of a compound such as stearic acid with an additive sintering aid of 1% or less.

제 3 도는 이 미세혼합의 상태를 모식적으로 그린 도면이며, (a)는 종래의 혼합상태, (b)는 본 발명의 혼합상태를 표시한다. 산소량은 열전도율에 미치는 영향이 매우 크고, 0.5중량% 이하로 한다. 0.5중량% 이상에서는 180W/mK이상의 열전도율을 얻기 어려운 것이다. 산소량이 0.001% 이하에서는 소결체의 밀도가 불안정하게 되고, 또 매우 코스트가 높은 방법을 채용할 필요가 있다.3 is a diagram schematically showing the state of the micromixing, (a) shows a conventional mixed state, and (b) shows a mixed state of the present invention. The amount of oxygen has a great influence on the thermal conductivity and is set at 0.5% by weight or less. If it is 0.5 weight% or more, it is difficult to obtain thermal conductivity of 180 W / mK or more. When the amount of oxygen is 0.001% or less, the density of the sintered compact becomes unstable and it is necessary to adopt a very high cost method.

본 발명의 AIN은 바람직하게는, 평균입경이 5μ 이상일 것을 특징으로 한다. 이것은 AIN의 입자성장에 수반해서 AIN 속의 결함(빈구멍, 산소등)이 입계로부터 배출되기 때문이라고 생각된다. 그 때문에 입자성장이 불출분한 소결체는 낮은 열전도율밖에 얻지 못한다.AIN of the present invention is preferably characterized in that the average particle diameter is 5μ or more. This is considered to be because defects in the AIN (empty pores, oxygen, etc.) are discharged from the grain boundary with AIN grain growth. Therefore, the sintered compact in which particle growth is indistinct can obtain only low thermal conductivity.

본 발명의 AIN은 매우 소량의 입계층으로 이루어지며, 그것은 X선 회절법에 의해서는 검출이 곤란한 양이며, 1μ이하의 두께이다. 입계층은 열의 불량도체이고, AIN은 열전도율을 저하시킨다고 생각된다. 그 때문에 소결성을 저하시키지 않는 양으로서, 극력 적은 것이 바람직하다. 대략 1μ이하의 두께의 입계층이, 입계에서 점재(点在)하고 있으면, 높은 전도율을 얻을 수 있다.The AIN of the present invention is composed of a very small amount of grain boundary layers, which is an amount difficult to detect by the X-ray diffraction method and has a thickness of 1 μm or less. The grain boundary layer is a poor conductor of heat, and AIN is considered to lower the thermal conductivity. Therefore, as the amount which does not reduce sinterability, it is preferable that it is very low. If the grain boundary layer having a thickness of approximately 1 mu or less is interspersed at the grain boundary, high conductivity can be obtained.

입계 제 2 층은 희토류원소, 알루미늄, 산소, 질소로 이루어지고, 소결체속의 0.9체적% 이하이다. 입계층은 소결조제로서 첨가한 희토류원소가 AIN 표면 및 내부에 존재하는 A1, O와 반응해서 생긴 고온 용액이 질소를 고용(固溶)한 조성으로 이루어진다. 이것은 소결조제로서 첨가한 희토류원소가 AIN 의 탈산작용을 가지게 된다. 소결체속의 존재량으로서는, 다량으로 존재하면 소결체의 열전도율을 저하시키기 때문에, 0.9체적%로 한다. 존재량은 Ⅲa족 원소의 첨가 및 원료 AIN 분말의 불순물 산소량, 소결조건등에 의해 변동하지만, 0.9체적% 이하에서 대략 고열전도등의 소결체를 얻는다. 또한, 소결체속에 함유되는 Ⅲa족 원소는 혼합분말에 첨가한 양과 거의 동등한 양이고, 소결체속에 감소하는 양은 근소하다.The grain boundary second layer is composed of rare earth elements, aluminum, oxygen, and nitrogen, and is 0.9 vol% or less of the sintered compact. The grain boundary layer is composed of a composition in which a high-temperature solution formed by reacting rare earth elements added as a sintering aid with A1 and O present on the surface and inside of AIN is dissolved in nitrogen. This causes the rare earth element added as a sintering aid to have a deoxidation effect of AIN. As abundant amount in a sintered compact, when present in large quantities, since it will reduce the thermal conductivity of a sintered compact, it is 0.9 volume%. The amount of abundance varies depending on the addition of the group IIIa element, the amount of impurity oxygen of the raw material AIN powder, the sintering conditions, etc., but a sintered body of approximately high thermal conductivity is obtained at 0.9 vol% or less. Incidentally, the Group IIIa element contained in the sintered compact is almost the same as the amount added to the mixed powder, and the amount of reduction in the sintered compact is small.

AIN 소결체는 고열전도로 얻은 것은, AIN 입계부분에 탄소가 함유된다. 즉, 0.1중량% 이하 0.001%이상의 탄소를 함유하고, 희토류원소와의 비가 1/100∼10의 사이에 있다. 탄소가 0.1 이상에서는, 소결체의 밀도가 낮아지고, 오히려 열전도율도 낮아져서, 절연내압도 대폭으로 저하해 버린다.The AIN sintered body obtained with high thermal conductivity contains carbon in the AIN grain boundary. That is, 0.1 weight% or less contains 0.001% or more of carbon, and the ratio with rare earth elements is between 1 / 100-10. When carbon is 0.1 or more, the density of a sintered compact will become low, rather, thermal conductivity will also fall, and insulation breakdown voltage will also fall significantly.

희토류와의 존재비에서는, Ⅲa원소의 1/100~10의 사이에서 대략 양호한 결과를 얻는다. 탄소의 존재효과의 기구는 분명하지 않지만, 미량의 탄소가 AIN의 환원에 작용해서, 함유산소량을 감소시키는 일을 생각할 수 있다.In the abundance ratio with rare earths, an approximately good result is obtained between 1/100 and 10 of the IIIa element. Although the mechanism of the presence effect of carbon is not clear, it is conceivable that a small amount of carbon acts on the reduction of AIN to reduce the amount of oxygen contained.

본 발명의 소결체는 소결체속에서의 희토류원소의 분포가 크게 변화하는 일이 없다. 즉, 종래기술인 다량의 소결조제를 첨가하고, 친밀하게한 후 소결체속으로 제거하는 방법에서는, 소결체표면에 조제가 편석하고, 또한 그 대부분이 질화물로 변화하고 있기 때문에, 소결체의 소결표면 그대로로 사용하는 것이 불가능하다. 이에 대해서, 본 발명에서는 소결체속에서의 희토류원소가 크게 편석하는 일이 없이 소결표면 그대로 사용하는 것이 가능하다.In the sintered compact of the present invention, the distribution of rare earth elements in the sintered compact does not change significantly. In other words, in the method of adding a large amount of sintering aid in the prior art, making it intimate, and removing it into the sintered body, since the preparation is segregated on the surface of the sintered body and most of it is changed to nitride, the sintered surface of the sintered body is used as it is. It is impossible to do. In contrast, in the present invention, the rare earth element in the sintered compact can be used as it is without sintering largely.

본 발명의 소결체가 소량의 소결조제의 첨가에 의해서 고밀도 고열전도의 특성을 가지고 있기 때문에, 소결중에 조제를 제거하는 일이 불필요하게 되므로서 비로소 가능하게 된 것이다.Since the sintered compact of this invention has the characteristic of high density and high thermal conductivity by addition of a small amount of sintering aid, it becomes possible at last, since it becomes unnecessary to remove a preparation during sintering.

동시에 본 발명에 의한 소결체의 소결표면의 면거칠기는 Rmax로 5μ이하이고, 종래기술로서는 Rmax 10μ이상의 면거칠기가 되는 것을 피할 수 없었던 것이다. 회로기판으로서 사용하기 위해서는, 면거칠기는 5μ정도가 필요하고, 본 방법 발명의 소결체는 고열전도이고 또한 소결표면 그대로 사용할 수 있는 것이다.At the same time, the surface roughness of the sintered surface of the sintered body according to the present invention is 5 µm or less in Rmax, and the surface roughness of Rmax 10 µm or more cannot be avoided by the prior art. In order to use it as a circuit board, surface roughness needs about 5 micrometers, and the sintered compact of this invention is high thermal conductivity, and can be used as it is.

본 발명의 AIN 세라믹의 C축 격자상수(格子常數)는 4.9800Å 이상이다. AIN에 산소가 고용되면 격자상수는 작아진다고 생각되기 때문에, 격자상수가 4.9800Å 이하에서는 AIN의 순도가 낮아지고, 고열전도를 얻을 수 없는 것으로 생각된다.The C-axis lattice constant of the AIN ceramics of the present invention is 4.9800 Pa or more. When oxygen is dissolved in AIN, the lattice constant is considered to be small. Therefore, when the lattice constant is 4.9800 Pa or less, the purity of AIN is lowered and high thermal conductivity is not obtained.

본 발명의 AIN 세라믹은 전자선, 양이온선등의 비임조사(照射)에 대한 내성이 높고, 이들 비임에 의한 스패터내성이 크다. 그 때문에, 전자선, 플라스마등에 노출되는 조건으로 사용될 경우에 뛰어난 성능을 발휘한다. 이것은 AIN의 열전도율이 높고, 이들 비임조사에 의한 극부의 온도상승이 작고, 압계층이 얇기 때문에 비임조사에 대하여 열성(劣性)인 입계층의 선택적인 손상이 작은 것등에 의한 것이라고 생각된다.The AIN ceramics of the present invention have high resistance to beam irradiation such as electron beams and cationic rays, and have high spatter resistance by these beams. Therefore, when used under conditions exposed to an electron beam, a plasma, etc., it demonstrates the outstanding performance. This is thought to be due to the high thermal conductivity of AIN, the small temperature rise at the pole due to the beam irradiation, and the small pressure gauge layer, resulting in a small amount of selective damage of the grain boundary layer that is thermally resistant to the beam irradiation.

유전율에 대해서는 10GHZ의 고주파에 있어서 7.6 이하이다. 저유전인 것은 특히 고주파, 고속도의 소자용기판에는 중요한 성능이다. 본 발명원의 소결체는, 유전율이 높은 입계층을 흔적 정도밖에 함유하지 않기 때문에 낮은 유전율을 가진다.The dielectric constant is 7.6 or less at a high frequency of 10 GHZ. Low dielectric is an important performance, especially for device substrates of high frequency and high speed. The sintered compact of the present invention has a low dielectric constant because it contains only traces of grain boundaries having a high dielectric constant.

본 발명의 소결체는 희토류원소를 함유한 화합물을 적어도 1개를 희토류원소로서 0.01∼1.0중량%가 되도록 AIN 분말과 혼합한다.The sintered compact of this invention mixes at least 1 compound containing a rare earth element with AIN powder so that it may become 0.01 to 1.0 weight% as a rare earth element.

혼합은 상법으로 유기용매속에서 행한다. 물속에서의 혼합은 AIN 분말의 산화가 일어나고 바람직하지 않다. 성형조제로서는 파라핀, PVB, PEG등이 사용된다. 또 페놀수지등, 분해해서 탄소를 잔류시키는것, 탄소분말, 흑연분말등을 첨가하고, 소결체속의 잔류탄소를 재어하는 것도 효과가 크다. 희토류화합물로서는 스테아르산, 파르메틴산, 알콕시드질산염, 탄산염, 수산화물등이 사용된다. 바랍직하게는 스테아르산등 고분자의 화합물을 사용한다. 이것들은 희토류의 함유량을 작게하고, AIN 분말과의 혼합을 양호하게 하는 것이 가능해진다고 생각된다.Mixing is carried out in an organic solvent in a conventional manner. Mixing in water causes oxidation of the AIN powder and is undesirable. As the molding aid, paraffin, PVB, PEG and the like are used. In addition, it is also effective to decompose phenol resins to leave carbon, to add carbon powder, graphite powder, etc. and to measure the residual carbon in the sintered body. As rare earth compounds, stearic acid, parmetic acid, alkoxide nitrates, carbonates, hydroxides and the like are used. Preferably, a compound of a polymer such as stearic acid is used. These are considered to make it possible to reduce the rare earth content and to improve the mixing with the AIN powder.

특히 스테아르산은 성형조제로서의 작용외에 AIN 분말과의 혼합성, 잔류하는 탄소량등으로부터 가장 바람직한 결과를 얻었다.In particular, stearic acid, in addition to acting as a molding aid, the most preferable results were obtained from the mixed with the AIN powder, the amount of carbon remaining.

질화 알루미늄 분말을 미세균일 입자일 필요가 있다. 평균입경 1μ이하인 것이 바람직하고, 또 산소함유량으로서는 2.0중량% 이하가 바람직하다. 이와 같은 AIN분말은 직접 질화법(금속 A1의 질화에 의한 방법)으로서는 얻기 어렵고, 환원질화법(산화알루미늄의 환원질화에 의한 방법)에 의해서 얻게 된다. 직접 질화법으로 얻을 경우에는 반응의 제어, 입경의 분급등에 충분한 배려가 필요하다. 소결은 질소함유의 비산화분위기에서 행한다. 높은 열전도율을 얻기 위해서는, 1000∼2100℃에서 5시간 이상 소결하고 평균입경을 5μ이상으로 하는 것이 바랍직한 소결조건이다. 소결후의 냉각은 신속하게 행하고, 서냉하였을 경우에는, 소결조제가 석출하고, 소결표면의 열화가 현저해진다. 바람직하게는 200℃/시간 이상의 속도에서 1500℃까지 냉각한다.The aluminum nitride powder needs to be microuniform particles. It is preferable that it is 1 micrometer or less in average particle diameter, and 2.0 weight% or less is preferable as oxygen content. Such AIN powder is difficult to obtain by the direct nitriding method (method by nitriding metal A1), and is obtained by reduction nitriding method (method by reduction nitriding of aluminum oxide). In the case of obtaining by direct nitriding, sufficient consideration should be given to controlling the reaction and classifying the particle size. Sintering is performed in a non-oxidizing atmosphere containing nitrogen. In order to obtain high thermal conductivity, it is preferable to sinter at 1000 to 2100 ° C for 5 hours or more and to have an average particle diameter of 5 µm or more. Cooling after sintering is rapid, and when slow cooling, a sintering aid precipitates, and the deterioration of a sintered surface becomes remarkable. Preferably it cools to 1500 degreeC at the speed of 200 degreeC / hour or more.

본 발명의 소결체는 금속페이스트를 사용해서 도체회로를 형성하므로서 회로기판으로서 사용되며, 또 반도체소자, 리이드프레임과의 조합시킨 패키지로서도 사용된다.The sintered body of the present invention is used as a circuit board by forming a conductor circuit using a metal paste, and is also used as a package combined with a semiconductor element and a lead frame.

금속 페이스트는 공지의 W, Mo계 고융점 금속 Cu, Au, Ag등 도체금속 RuO2등 저항체에 유리성분등을 첨가한 것을 사용하는 것이 가능하다. 본 발명의 소결체는 균일성 및 순도에 뛰어나기 때문에, 높은 접착강도 및 신뢰성을 얻을 수 있다는 것이다.The metal paste can be used by adding a glass component or the like to a resistor such as a conductive metal RuO 2 such as a well-known W or Mo-based high melting point metal such as Cu, Au, or Ag. Since the sintered compact of this invention is excellent in uniformity and purity, it can obtain high adhesive strength and reliability.

또 이온 플레이팅, 스패터등에 의한 Ti, Au, Ni, TaN등 박막의 금속층을 형성하고, 회로화 하는 것도 유용하다.It is also useful to form and circuit a metal layer of a thin film such as Ti, Au, Ni, TaN by ion plating, spatter, or the like.

본 발명의 소결체는 회로형성후의 도금처리 혹은 페이스트 소성시의 대기속 가열등에 대한 안정성이 높고, 이점에서도 종래의 AIN 회로기판에 대해서 뛰어난 특성을 가진다.The sintered body of the present invention has high stability against plating treatment after circuit formation or atmospheric heating during paste firing, and also has superior characteristics with respect to conventional AIN circuit boards.

세라믹 패키지에는, 리이드프레임과의 응력완충을 목적으로, Cu 판을 개재층으로 하는 것이 리이드프레임 강도를 확보하는데 효과가 있고, 또 Cu-W 금속을 방열판으로서 접합하는 것도 유용하다.In the ceramic package, for the purpose of stress relaxation with the lead frame, it is effective to use the Cu plate as an interlayer to secure the lead frame strength, and it is also useful to join the Cu-W metal as a heat sink.

이하 실시예를 들어서 설명한다.An example is given below.

[실시예 1]Example 1

AIN 분말(평균입경 0.4μ, 산소량 1.4중량%)에 표 1에 표시한 량의 스테아르산이트륨을 성형조제로서 PVB를 10중량% 첨가하고, 에탄올속에서 충분히 혼합한 후 건조해서 얻은 분말을 기계프레스에 의해 35×35×3mm의 박판으로 성형하였다. 얻게된 성형체는 표 1에 표시한 조건으로 질소기류속에서 소결하였든바, 표 1에 표시한 소결체를 얻었다. Y가 0.01∼1.0중량%, 산소량아 0.5중량% 이하이면 고열전도에서 또한 저유전율의 AIN 소결체를 얻게됨을 알 수 있다. 제 2 도은 표 1의 N0.4의 소결체 파면(破面)이고 AIN 입자의 결정이 갖추어져 있음을 알 수 있다. 또한, 산소량의 분석은 소결체를 200μ정도의 입자로 분쇄한후, 가스분석을 행하였다.10% by weight of PVB was added to the AIN powder (average particle diameter 0.4μ, oxygen content 1.4% by weight) of yttrium stearate as a molding aid, and the mixture was sufficiently mixed in ethanol and dried to obtain a mechanical press. Was molded into a thin plate of 35 × 35 × 3 mm. The obtained molded body was sintered in a nitrogen stream under the conditions shown in Table 1, whereby a sintered body shown in Table 1 was obtained. It can be seen that when Y is 0.01 to 1.0% by weight and the amount of oxygen is 0.5% by weight or less, an AIN sintered body having high dielectric constant and low dielectric constant is obtained. 2 shows the sintered wavefront of N0.4 in Table 1, and it can be seen that crystals of AIN particles are provided. In the analysis of the amount of oxygen, the sintered compact was pulverized into particles having a size of about 200 mu, followed by gas analysis.

[표 1]TABLE 1

Figure kpo00001
Figure kpo00001

[실시예 2]Example 2

표 1에 표시한 실시예 NO.4를 여러가지 소결시간으로 바꾸어 실험하였든 바, 제 1 도의 결과를 얻었다. 소결시간에 의해 AIN 입도가 변화하고, AIN 평균입경이 5μ이상이 되어 비로소 180W/mK 이상의 열전도율을 얻게 되고, AIN을 충분히 재결정화시키는 것이 중요하다는 것을 알 수 있다.Example NO.4 shown in Table 1 was changed to various sintering times, and the result of FIG. 1 was obtained. It is understood that the grain size of AIN changes with the sintering time, the average grain diameter of AIN is 5 µm or more, and thus the thermal conductivity of 180 W / mK or more is obtained, and it is important to sufficiently recrystallize AIN.

[실시예 3]Example 3

AIN 분말(평균입경 0.4μ, 산소량 1.4중량%)에 표 2에 표시한 양의 스테아르산이트륨과 성형조제로서 파라핀을 10중량% 첨가하고, 에탄올속에서 충분히 혼합한 후 건조해서 얻은 분말을 기계프레스에 의해 35×35×3mm의 판형상으로 성형하였다. 성형체는 표 2에 표시한 조건에서 질소기류속에서 소결하였다. 소결체의 산소량, 탄소량, Y량을 분석하고, 또 열전도율을 측정하였다. 그 결과 소결체속의 잔류탄소가 0.1% 이하에서 탄소량과 희토류원소량의 비교가 1/100∼10이면 특히 고열전도인 것을 알았다.10 wt% of yttrium stearate and paraffin as a molding aid were added to the AIN powder (average particle diameter 0.4 μg, oxygen amount 1.4 wt%), and the powder obtained by mixing thoroughly in ethanol and drying was machine press. Was molded into a plate shape of 35 × 35 × 3 mm. The molded body was sintered in a nitrogen stream under the conditions shown in Table 2. The amount of oxygen, carbon, and Y in the sintered compact were analyzed and the thermal conductivity was measured. As a result, when the residual carbon in the sintered compact was 0.1% or less, the comparison between the carbon amount and the rare earth element amount was 1/100 to 10, indicating a particularly high thermal conductivity.

[표 2]TABLE 2

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Figure kpo00002

[비교예][Comparative Example]

표 1에 표시한 재료번호 7을 1950℃ C 케이스속에서 72시간 소결하였든바, 상대밀도 100%, 열전도율 240W/mK, 유전율 8, 산소량 0.1, Y량 0.6의 뛰어난 특성을 얻었다. 그러나 소결 표면에 YN의 편석이 인정되고, 소결 표면 그대로서는 기판재료로서 사용될 수 없음을 알았다.The material No. 7 shown in Table 1 was sintered for 72 hours in a 1950 ° C. case, so that excellent characteristics of 100% relative density, 240W thermal conductivity, dielectric constant 8, oxygen content 0.1 and Y content 0.6 were obtained. However, it was found that segregation of YN was recognized on the sintered surface, and that it could not be used as a substrate material as it is.

이에 대해서, 본 발명의 소결체는 YN 그 외 제 2 상(相)의 편석은 없고, AIN의 균일한 입자가 갖추어져 있다(제 2 도).On the other hand, the sintered compact of this invention does not have segregation of YN and other 2nd phase, and is equipped with the uniform particle | grains of AIN (FIG. 2).

[실시예 5]Example 5

AIN 분말(평균입경 0.4μ, 산소량 1.4중량%)에 CaO 분말 1.5중량% 첨가한 분말을 프레스 성형하고 35×35×1.0mm 각(角)의 성형체를 얻었다. 성형체를 2000℃의 공기 기류속에서 10시간 소결하였든 바, 상대밀도 100%, 열 전도율 210W/mK, 유전율 8, 산소량0.2, Ca량 0.1의 뛰어난 특성을 얻었다. 소결표면은 요철이 크고 표면거칠기 Rmax 10μ로 소결 표면 그대로는 기판으로서 사용이 불가능하였다.The powder in which 1.5 weight% of CaO powders were added to AIN powder (average particle diameter 0.4 micrometer, 1.4 weight% of oxygen) was press-molded, and the molded object of 35 * 35 * 1.0mm square was obtained. When the molded product was sintered in an air stream at 2000 ° C. for 10 hours, excellent characteristics of 100% relative density, 210W / mK thermal conductivity, 8 dielectric constant, 0.2 oxygen content and 0.1 Ca content were obtained. The sintered surface had a large unevenness and had a surface roughness Rmax of 10 mu.

그러나, 이에 대해서 CaO 대신에 스테아르산이트륨을 같은량 첨가해서, 본 발명의 방법으로 작성한 소결체의 소결표면은, Rmax 4μ로 그대로 사용이 가능하였다.However, on the other hand, the same amount of yttrium stearate was added instead of CaO, and the sintered surface of the sintered body prepared by the method of the present invention could be used as it is at Rmax 4 mu.

[실시예 6]Example 6

실시예 1에 표시한 번호 10 및 11의 재료를 Ar-이온비임(이온발생전압 8KV, 이온발생전류 0.5mA, 입사각 30°, 스페터시간 150min)조사하였든 바, NO.10은 2μ 깊이밖에 스패터되지 않았지만, NO.11은 11μ깊이에 걸쳐서 스패터되었다.The materials 10 and 11 indicated in Example 1 were irradiated with Ar - ion beam (ion generating voltage 8KV, ion generating current 0.5mA, incident angle 30 °, sputtering time 150min). Although unbroken, NO.11 was spattered over 11 microns deep.

본 발명의 AIN의 내스패터성에 뛰어난 것을 알 수 있다.It turns out that it is excellent in the spatter resistance of the AIN of this invention.

[실시예 7]Example 7

질화 알루미눔 분말(평균직경 0.5μ, 산소량 1.0중량%)에 표 3에 표시한 소결조제를 첨가하고, 성형조제로서 아크릴수지를 5중량% 첨가하고, 충분히 혼합한 후 35×35×3.0의 치수로 성형해서, 질소기류속 1950℃에서 5시간 소결하였다. 얻게된 소결체의 특성을 표 3에 표시한다. 본 발명의 소결체가 높은 열전도율을 표시하는 것을 알 수 있다.After adding the sintering aid shown in Table 3 to the aluminum nitride powder (average diameter 0.5μ, oxygen content 1.0% by weight), adding 5% by weight of acrylic resin as a molding aid, and thoroughly mixed, the dimensions of 35 × 35 × 3.0 It was molded in a furnace and sintered at 1950 ° C. for 5 hours in a nitrogen stream. The characteristics of the obtained sintered compact are shown in Table 3. It can be seen that the sintered compact of the present invention exhibits high thermal conductivity.

[표 3]TABLE 3

Figure kpo00003
Figure kpo00003

[실시예 8]Example 8

실시예 1의 NO.4에서 얻은 AIN 소결체의 표면에, 시판중인 Ag 페이스트, Au 페이스트, Ag-Pd 페이스트등을 스크리인 인쇄해서, 850∼950℃ 대기속에서 소성하였든 바, 어느 도체나 접촉강도는 1Kg/㎟이상을 표시하고, 본 발명의 AIN 기판이 회로기판으로서 사용가능한 것을 알았다.Commercially available Ag pastes, Au pastes, Ag-Pd pastes, etc. were screen-printed on the surface of the AIN sintered body obtained in NO.4 of Example 1 and fired in an atmosphere of 850 to 950 ° C. The strength indicated 1 Kg / mm 2 or more, and it was found that the AIN substrate of the present invention can be used as a circuit board.

[실시예 9]Example 9

실시예 8과 마찬가지로 W, MO를 주금속 성분으로 한 페이스트를 스크리인 인쇄하고, 1500℃ 질소기류속에서 소성한 후, Ni 도금을 실시하고, 코발판과 납붙임 하였든바, 모든 고융점 메탈라이즈층도 고강도의 접착을 달성하고, 5㎏/㎟의 접착강도를 얻었다.As in Example 8, screen-printed pastes containing W and MO as main metals were baked, fired in a nitrogen gas stream at 1500 ° C, Ni-plated, and cobalt plated and soldered. The rise layer also achieved high strength adhesion, and obtained an adhesive strength of 5 kg / mm 2.

[실시예 10]Example 10

실시예 8과 마찬가지로 NO.10과 마찬가지의 제조법으로, 15㎜ 각에서 0.9㎜ 두께의 AIN 세라믹기판 캐비티가 있는 것을 얻었다. 캐비티내에 Au 메탈라이즈해서 Si 반도체소자를 다이본드 하였다. 조성 B 소포듀민 함유의 PbO, B2O3시일유리를 AIN 기판 주변에 실시해서 42 아로이제의 리이드프레임과, 또 상기와 동일한 AIN로 이루어진 캡을 고착하였다.In the same manner as in Example 10, there was obtained a AIN ceramic substrate cavity having a thickness of 0.9 mm at a 15 mm angle. Au metallization was carried out in the cavity to die-bond Si semiconductor devices. PbO and B 2 O 3 sealing glass containing composition B sorbodimin were applied around the AIN substrate, and a lead frame made of 42 aloy and a cap made of the same AIN as described above were fixed.

얻게된 패키지는 열저항이 20℃/W로, 특별한 방열기구 없이 반도체 소자의 온도상승을 억제하였다.The resulting package had a thermal resistance of 20 ° C./W, which suppressed the temperature rise of the semiconductor device without any heat dissipation mechanism.

본 발명의 가장 바람직한 실시태양을 아래에 종합한다.The most preferred embodiments of the invention are summarized below.

① AIN의 평균결정 입경이 5μ이상인 것을 특징으로 하는 특허청구의 범위 제 1 항 기재의 AIN 세라믹스.① AIN ceramics according to claim 1, wherein the average crystal grain size of AIN is 5 µm or more.

② 입계 제 2 상의 희토류원소, 알루미늄, 산소, 질소로 이루어지고, 소결체속의 0.9체적% 이하인 것을 특징으로 하는 특허청구의 범위 제 1 항 기재의 AIN 세라믹스.(2) The AIN ceramics according to claim 1, which is composed of rare earth elements of the grain boundary second phase, aluminum, oxygen, and nitrogen, and is not more than 0.9% by volume of the sintered body.

③ AIN 입체 본분에 0.1중량% 이하의 탄소가 함유되고, 탄소함유량과 희토류원소의 비가 1/100∼10인것을 특징으로 하는 특허청구의 범위 제 1∼2 항 기재의 AIN 세라믹스.(3) AIN ceramics according to Claims 1 to 2, wherein the carbon content of 0.1 wt% or less is contained in the AIN solid main powder and the ratio of carbon content to rare earth element is 1/100 to 10.

④ 소결체 표면에 고농도의 희토류원소의 편석, 또는 희토류질화물이 존재하지 않는 것을 특징으로 하는 특허청구의 범위 제 1∼2 항 기재의 AIN 세라믹스.(4) AIN ceramics according to claims 1 to 2, wherein segregation of rare earth elements or rare earth nitrides do not exist on the surface of the sintered body.

⑤ 소결체 표면의 소결표면이 면거칠기 5μ이하인 것을 특징으로 하는 특허청구의 범위 제 1∼2 항 기재의 AIN 세라믹스.(5) AIN ceramics according to claims 1 to 2, wherein the sintered surface of the sintered body has a surface roughness of 5 mu or less.

⑥ AIN의 C축 격자상수가 4, 9800A 이상인 것을 특징으로 하는 특허청구의 범위 제 1∼2 항 기재의 AIN 세라믹스.(6) AIN ceramics according to claims 1 to 2, wherein the C-axis lattice constant of AIN is 4, 9800 A or more.

⑦ 전자선, 양이온 조사에 대한 내성이 높은 것을 특징으로 하는 특허청구의 범위 제 1∼2 항 기재의 AIN 세라믹스.(7) AIN ceramics according to claims 1 to 2, characterized by high resistance to electron beam and cation irradiation.

⑧ 유전율이 10GHz에 있어서, 7.6 이하인 것을 특징으로 하는 특허청구의 범위 제 1∼2 항 기재의 AIN 세라믹스.(8) AIN ceramics according to claims 1 to 2, characterized in that the dielectric constant is 7.6 or less at 10 GHz.

⑨ 질화 알루미늄 분말이 산소함유량 2.0중량% 이하 평군입경 1.0μ이하인 것을 특징으로 하는 특허청구의 범위 제 3 항 기재의 AIN의 제조법.(9) The method for producing AIN according to claim 3, wherein the aluminum nitride powder has an oxygen content of 2.0 wt% or less and a flat group particle size of 1.0 mu or less.

⑩ 질화 알루미늄 분말이 AI2O3분말의 환원질화법에 의해 얻은 분말을 사용하는 것을 특징으로 하는 특허청구의 범위 제 3 항 기재의 AIN의 제조법.(B) A method for producing AIN according to claim 3, wherein the aluminum nitride powder uses a powder obtained by reduction nitriding of AI 2 O 3 powder.

⑪ AIN 성형체를 1800℃∼2100℃에서 5시간 이상 소결하고, 평군입경을 5μ이상 입자성장시키는 것을 특징으로 하는 특허청구의 범위 제 3 항 기재의 AIN 제조법.(B) AIN molded body is sintered at 1800 ° C to 2100 ° C for at least 5 hours, and grain growth is carried out by 5 µm or more of the common group particle size.

⑫ 도전페이스트가 Ag, Au, Pd, U를 금속성분으로 하는 것을 특징으로 하는 특허청구의 범위 제 4 항 기재의 AIN 회로기판.(A) AIN circuit board according to claim 4, wherein the conductive paste contains Ag, Au, Pd, or U as a metal component.

⑬ 도전페이스트가 W, Mo를 금속성분으로 하는것을 특징으로 하는 특허청구의 범위 제 4 항 기재의 AIN 회로기판.(A) AIN circuit board according to claim 4, wherein the conductive paste comprises W and Mo as metal components.

⑭ Cu-W 합금을 방열판으로 접합하고, 사용하는 것을 특징으로 하는 특허청구의 범위 제 5 항 기재의 세라믹 패키지.세라믹 The ceramic package according to claim 5, wherein a Cu-W alloy is bonded to a heat sink and used.

⑮ AIN와 리이드프레임과의 사이에 Cu판을 완충재로서 사용하는 것을 특징으로 하는 제 ⑤의 세라믹 패키지.(5) The ceramic package according to item ⑤, wherein a Cu plate is used as the buffer material between the AIN and the lead frame.

Claims (5)

질화 알루미늄을 주성분으로 하고, 주기율표 Ⅲa족 원소가 0.01∼1.0중량%, 산소를 0.001∼0.5중량% 함유하고, 열전도율이 180W/mK 이상인 것을 특징으로 하는 고열전도성 질화 알루미늄 소결체.A high thermal conductivity aluminum nitride sintered body comprising aluminum nitride as a main component, containing 0.01 to 1.0% by weight of group IIIa elements of the periodic table, 0.001 to 0.5% by weight of oxygen, and having a thermal conductivity of 180 W / mK or more. 제 1 항에 있어서, 소결체가 질화 알루미늄 입자사이에 1μ이하의 두께로 제 2 상이 점재하는 것을 특징으로 하는 고열전도성 질화 알루미늄 소결체.The high thermal conductivity aluminum nitride sintered compact according to claim 1, wherein the sintered compact is interspersed with aluminum nitride particles with a thickness of 1 µm or less. 질화 알루미늄 분말에 주기율표 Ⅲa족 원소를 함유한 스테아르산 화합물의 적어도 1개를 원소환산으로 0.01∼1.0중량%가 되도록 첨가해서 균일하게 혼합하고, 성형후 비산화성함 질소분위기 속에서 1500∼2200℃에서 소결하는 것을 특징으로 하는, Ⅲa족 원소를 0.01∼1.0중량%와 산소 0.001∼0.5중량%를 함유한 고열전도성 질화 알루미늄 소결체의 제조법.At least one stearic acid compound containing a group IIIa element of the periodic table is added to the aluminum nitride powder so as to be 0.01 to 1.0% by weight in elemental form and mixed uniformly, at a temperature of 1500 to 2200 ° C. in a non-oxidizing nitrogen atmosphere after molding. A method for producing a high thermal conductivity aluminum nitride sintered body containing 0.01 to 1.0% by weight of a Group IIIa element and 0.001 to 0.5% by weight of oxygen, characterized by sintering. 제 1 항에 있어서, 질화 알루미늄 소결체의 표면에 도전성 페이스트를 형성시킨 것을 특징으로 하는 질화 알루미늄 회로기판인 고열전도성 질화 알루미늄 소결체.The high thermal conductivity aluminum nitride sintered body according to claim 1, wherein a conductive paste is formed on the surface of the aluminum nitride sintered body. 제 1 항에 있어서, 질화 알루미늄 기판과 반도체소자와 리이드프레임으로 이루어진 고열전도성 세라믹 패키지인 고열전도성 질화 알루미늄 소결체.The high thermal conductivity aluminum nitride sintered body according to claim 1, which is a high thermal conductive ceramic package comprising an aluminum nitride substrate, a semiconductor element, and a lead frame.
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