KR910700196A - Method and apparatus for producing boron carbide crystals - Google Patents

Method and apparatus for producing boron carbide crystals

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Publication number
KR910700196A
KR910700196A KR1019900701997A KR900701997A KR910700196A KR 910700196 A KR910700196 A KR 910700196A KR 1019900701997 A KR1019900701997 A KR 1019900701997A KR 900701997 A KR900701997 A KR 900701997A KR 910700196 A KR910700196 A KR 910700196A
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KR
South Korea
Prior art keywords
furnace
boron carbide
nitrogen
carbide crystals
zone
Prior art date
Application number
KR1019900701997A
Other languages
Korean (ko)
Inventor
무어 윌리엄 지
Original Assignee
리챠드 고든 워터맨
더 다우 케미칼 캄파니
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Application filed by 리챠드 고든 워터맨, 더 다우 케미칼 캄파니 filed Critical 리챠드 고든 워터맨
Publication of KR910700196A publication Critical patent/KR910700196A/en

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    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B3/00Hydrogen; Gaseous mixtures containing hydrogen; Separation of hydrogen from mixtures containing it; Purification of hydrogen
    • C01B3/02Production of hydrogen or of gaseous mixtures containing a substantial proportion of hydrogen
    • C01B3/32Production of hydrogen or of gaseous mixtures containing a substantial proportion of hydrogen by reaction of gaseous or liquid organic compounds with gasifying agents, e.g. water, carbon dioxide, air
    • C01B3/34Production of hydrogen or of gaseous mixtures containing a substantial proportion of hydrogen by reaction of gaseous or liquid organic compounds with gasifying agents, e.g. water, carbon dioxide, air by reaction of hydrocarbons with gasifying agents
    • C01B3/36Production of hydrogen or of gaseous mixtures containing a substantial proportion of hydrogen by reaction of gaseous or liquid organic compounds with gasifying agents, e.g. water, carbon dioxide, air by reaction of hydrocarbons with gasifying agents using oxygen or mixtures containing oxygen as gasifying agents
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00Carbon; Compounds thereof
    • C01B32/90Carbides
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00Carbon; Compounds thereof
    • C01B32/90Carbides
    • C01B32/914Carbides of single elements
    • C01B32/991Boron carbide
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01PINDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00Particle morphology
    • C01P2004/60Particles characterised by their size
    • C01P2004/62Submicrometer sized, i.e. from 0.1-1 micrometer

Abstract

내용 없음.No content.

Description

탄화붕소 결정 생산 방법 및 장치Method and apparatus for producing boron carbide crystals

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제1도는 발명에 따라 탄화붕소를 생산하는데 사용된 고온로의 개략 정면도이다, 제2도는 탄화붕소를 위한 시작 재료를 로내로 이송하는데에 사용되는 제1도의 로의 부품의 상세도이다.1 is a schematic front view of a high temperature furnace used to produce boron carbide in accordance with the invention, and FIG. 2 is a detailed view of the parts of the furnace of FIG. 1 used to transport starting material for boron carbide into the furnace.

Claims (10)

결정의 대부분이 크기가 1마이크로미터보다 낮고 작은 질소 함량을 갖는 탄화붕소 결정 생산 방법에 있어서, 다량의 질소를 함유하는 미립자 이송 혼합물을 형성하기위해 붕산 산화물과 탄소 화합물을 혼합하는 단계와, 질소가 제거되고 불활성 개스로 대치되도록 포함된 질소 제거하기 위하여 미립자 이송 혼합물을 탈기하는 단계와, 고온로의 구역내로 연장되는 방출 단부를 갖는 수직 이송 튜브를 통해 질소가 없는 미립자 이송 혼합물을 낙하시키는 단계와, 질소가 없는 미립자 이송 혼합물이 로의 고온 구역을 통해 떨어질때 붕산 산화물이 탄화붕소 결정을 형성하기 위해 탄소 화합물과 반응하도록 고운 구역의 온도를 섭씨 1570도 위로 유지시키면서, 질소가 없는 미립자 이송 혼합물이 로의 고온 구역을 통해 수직 튜브의 방출 단부로 부터 떨어지도록 허용하는 단계를 포함하는 것을 특징으로 하는 탄화붕소 결정 생산 방법.A method for producing boron carbide crystals, the majority of the crystals being less than 1 micrometer in size and having a small nitrogen content, comprising the steps of mixing boric oxide with a carbon compound to form a particulate transport mixture containing a large amount of nitrogen; Degassing the particulate conveying mixture to remove nitrogen contained therein and replaced with an inert gas, dropping the nitrogen-free particulate conveying mixture through a vertical conveying tube having a discharge end extending into the zone of the furnace; The nitrogen-free particulate transport mixture is maintained at a high temperature of 1570 degrees C while the boric oxide reacts with the carbon compound to form boron carbide crystals when the nitrogen-free particulate transport mixture falls through the high temperature zone of the furnace. Away from the discharge end of the vertical tube through the zone Acceptable method rock crystal boron carbide comprising the steps of production. 제1항에 있어서, 수직 이송 튜브의 방출 단부 아래를 통과하는 통로를 따라 일 군의 보우트 부재를 로의 고온 구역을 통해 이동시키는 단계와, 보우트가 이송 튜브의 방출 단부 아래를 통과할 때 각각의 보우트 부재를 탄화붕소 결정으로 충전시기는 단계와, 각각의 보우트 부재내의 탄화붕소 결정을 로의 고온 구역 외부의 수집 지점으로 운반하는 단계를 추가로 포함하는 것을 특징으로 하는 탄화붕소 결정 생산 방법.2. The method of claim 1, further comprising: moving a group of bolt members through the hot zone of the furnace along a passage passing below the discharge end of the vertical transfer tube and each boat as it passes under the discharge end of the transfer tube. And filling the member with boron carbide crystals, and conveying the boron carbide crystals in each bolt member to a collection point outside the hot zone of the furnace. 제1항에 있어서, 로의 고온 구역이 섭씨 1600도 내지 섭씨 2100도로 유지되는 것을 특징으로 하는 탄화붕소 결정 생산 방법.The method of claim 1 wherein the hot zone of the furnace is maintained at 1600 degrees Celsius to 2100 degrees Celsius. 제1항에 있어서, 질소가 없는 미립자 이송 혼합물은 수직 이송 튜브냉로 0.05 0.13㎏/min(0.1 내지 0.31bs/min)의 속도로 떨어지는 것을 특징으로 하는 탄화붕소 결정 생산 방법.The method of claim 1, wherein the nitrogen-free particulate conveying mixture falls at a rate of 0.05 0.13 kg / min (0.1 to 0.31 bs / min) in a vertical conveying tube chiller. 제1항에 있어서, 보우트 부재는 로의 고온 구역을 통화여 2.5 내지 7.6㎝/min(1내지 3인치/min)의 속도로 이동하는 것을 특징으로 하는 탄화붕소 결정 생산 방법.The method of claim 1 wherein the bolt member moves the high temperature zone of the furnace at a rate of 2.5 to 7.6 cm / min (1 to 3 inches / min). 제1항에 있어서, 붕산 산화물은 붕산 무수물이고, 탄화 화합물은 아세틸렌 카본 블랙인 것을 특징으로 하는 탄화붕소 결정 생산 방법.The method for producing boron carbide crystals according to claim 1, wherein the boric oxide is boric anhydride and the carbide compound is acetylene carbon black. 제1항에 있어서, 탄화붕소 결정의 중량비로 적어도 50 퍼센트는 크기가 1마이크로마터보다 작은 것을 특징으로 하는 탄화붕소 결정 생산 방법.The method of claim 1 wherein at least 50 percent by weight of the boron carbide crystals are less than 1 micrometer in size. 제7항에 있어서, 탄화붕소 결정은 질소를 중량비로 0.5 퍼센트보다 적게 포함하는 것을 특징으로 하는 탄화붕소 결정 생산 방법.8. The method of claim 7, wherein the boron carbide crystals contain less than 0.5 percent by weight nitrogen. 제1항에 있어서, 탄화붕소 결정의 크기의 0.1마이크로미터 내지 0.3마이크로미터인 것을 특징으로 하는 탄화붕소 결정 생산 방법.The method of claim 1, wherein the boron carbide crystals are 0.1 micrometer to 0.3 micrometers in size. 결정의 대부분이 크기가 1마이크로미터보다 작고 낮은 질소 함량을 갖는 탄화붕소 결정 생산용 고온로 유니트에 있어서, 플로어 부재(14)와 루프 부재(11)사이의 공간은 고온 구역(17)을 한정하는데, 플로어 부재(14) 및 플로어 부재로부터 이격된 루프 부재(11)와, 로내에서 루프 부재(11)에 인접 위치되고, 로의 고온 구역(17)에 열을 공급하는 가열기(18)와, 로의 고온 구역(17)위에 위치되고, 붕산 산화물과 탄소화합물의 질소없는 미립자 혼합물(35)을 고온 구역(17)으로 이송하도곡 설계되며, 붕산 산화물 이송 화합물을 용융점 아래에 유지시키기 위해 냉각 유체에 의해 냉각되는 수직 이송 튜브(26)와, 혼합물이 고온 구역을 통해 이동할 때 미립자 혼합물이 탄화붕소 결정을 형성하기 하는 온도에 있는 로의 고온 구역(17)과, 각각의 보우트(40)는 수직이송 튜브(26)의 바로 아래를 통과하는 통로내에서 로의 고온 구역(17)의 플로어(14)를 따라 이동되기에 적합하고, 또한 각각의 보우트(40)는 탄화붕소 결정을 고온 구역 외부의 수집 지점으로 운반하기에 적합한 일 군의 보우트(40)를 포함하는 것을 특징으로 하는 로 유니트.In a high temperature furnace unit for producing boron carbide crystals, the majority of the crystals being less than 1 micrometer in size and having a low nitrogen content, the space between the floor member 14 and the loop member 11 defines the hot zone 17. , The roof member 11 spaced apart from the floor member 14 and the floor member, a heater 18 positioned adjacent to the loop member 11 in the furnace and supplying heat to the high temperature zone 17 of the furnace, and the high temperature of the furnace. Located above zone 17 and designed to transfer a nitrogen-free particulate mixture 35 of boric oxide and carbon compounds to high temperature zone 17, cooled by a cooling fluid to keep the boric oxide transport compound below the melting point. The vertical conveying tube 26, the hot zone 17 of the furnace at which the particulate mixture forms boron carbide crystals as the mixture moves through the hot zone, and each boat 40 is a vertical conveying tube 26. It is suitable to be moved along the floor 14 of the hot zone 17 of the furnace in a passage passing just below), and each boat 40 also carries boron carbide crystals to a collection point outside the hot zone. A furnace unit, characterized in that it comprises a group of bolts (40) suitable for. ※참고사항:최초출원 내용에 의하여 공개하는 것임.※ Note: This is to be disclosed based on the first application.
KR1019900701997A 1989-01-11 1989-12-27 Method and apparatus for producing boron carbide crystals KR910700196A (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US295682 1981-08-24
US29568289A 1989-01-11 1989-01-11
PCT/US1989/005871 WO1990008102A1 (en) 1989-01-11 1989-12-27 Method and apparatus for producing boron carbide crystals

Publications (1)

Publication Number Publication Date
KR910700196A true KR910700196A (en) 1991-03-14

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KR1019900701997A KR910700196A (en) 1989-01-11 1989-12-27 Method and apparatus for producing boron carbide crystals

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EP (1) EP0429557A4 (en)
JP (1) JPH03503158A (en)
KR (1) KR910700196A (en)
AU (1) AU621989B2 (en)
CA (1) CA2007460A1 (en)
FI (1) FI904446A0 (en)
IL (1) IL93018A0 (en)
WO (1) WO1990008102A1 (en)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NO20010929D0 (en) * 2001-02-23 2001-02-23 Norsk Hydro As A method for conducting thermal reactions between reactants and an oven for the same
CN106810261A (en) * 2017-04-12 2017-06-09 郑州嵩山硼业科技有限公司 A kind of method that use intermediate frequency furnace smelts boron carbide
CN110357106B (en) * 2019-08-26 2022-07-29 燕山大学 Method for preparing nano twin crystal boron carbide powder
CN113880093A (en) * 2021-11-24 2022-01-04 郑州嵩山硼业科技有限公司 Boron carbide production process
CN114506846B (en) * 2022-02-15 2023-06-06 厦门金鹭特种合金有限公司 Production method and production device of superfine carbide

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US1897214A (en) * 1930-05-14 1933-02-14 Norton Co Boron carbide and method of making the same
US2155682A (en) * 1935-11-21 1939-04-25 Norton Co Method of making abrasive metal carbides
US3377141A (en) * 1964-08-26 1968-04-09 Cabot Corp Process for producing metal carbides utilizing a solution treatment prior to reaction
US3379647A (en) * 1966-05-04 1968-04-23 Carborundum Co Metal carbide and boride production
US3535080A (en) * 1969-02-18 1970-10-20 Norton Co Apparatus and method for the continuous furnacing of borides,carbides and silicides
US4017587A (en) * 1969-10-03 1977-04-12 The United States Of America As Represented By The Secretary Of The Navy Boron carbide
US4137295A (en) * 1977-04-20 1979-01-30 Tamers Murry A Carbide production using molten metals as heat source
JPS55113609A (en) * 1979-02-21 1980-09-02 Ibiden Co Ltd Manufacturing apparatus for beta crystallbase silicon carbide
JPS5825044B2 (en) * 1979-05-23 1983-05-25 安藤 義則 Method and device for producing ultrafine carbide powder
US4529575A (en) * 1982-08-27 1985-07-16 Ibiden Kabushiki Kaisha Process for producing ultrafine silicon carbide powder
US4804525A (en) * 1986-04-14 1989-02-14 The Dow Chemical Company Producing boron carbide
JPS63166709A (en) * 1986-12-26 1988-07-09 Ibiden Co Ltd Production of carbide

Also Published As

Publication number Publication date
FI904446A0 (en) 1990-09-10
IL93018A0 (en) 1990-11-05
EP0429557A1 (en) 1991-06-05
EP0429557A4 (en) 1992-04-22
CA2007460A1 (en) 1990-07-11
AU5036490A (en) 1990-08-13
AU621989B2 (en) 1992-03-26
WO1990008102A1 (en) 1990-07-26
JPH03503158A (en) 1991-07-18

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