KR910020816A - Gas injector and exhaust port for photochemical deposition and rapid heat treatment device - Google Patents

Gas injector and exhaust port for photochemical deposition and rapid heat treatment device Download PDF

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Publication number
KR910020816A
KR910020816A KR1019900007232A KR900007232A KR910020816A KR 910020816 A KR910020816 A KR 910020816A KR 1019900007232 A KR1019900007232 A KR 1019900007232A KR 900007232 A KR900007232 A KR 900007232A KR 910020816 A KR910020816 A KR 910020816A
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South Korea
Prior art keywords
gas
exhaust
gas injector
heat treatment
rapid heat
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KR1019900007232A
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Korean (ko)
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KR930001897B1 (en
Inventor
이영수
김윤태
전치훈
김보우
안성호
Original Assignee
경상현
재단법인 한국전자통신연구소
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Priority to KR1019900007232A priority Critical patent/KR930001897B1/en
Publication of KR910020816A publication Critical patent/KR910020816A/en
Application granted granted Critical
Publication of KR930001897B1 publication Critical patent/KR930001897B1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)

Abstract

내용 없음No content

Description

광화학 증착 및 급속열처리 장치용 가스분사기 및 배기구Gas injector and exhaust port for photochemical deposition and rapid heat treatment device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제1도는 본 발명의 I형 가스분사기가 설치된 반응로를 나타낸 평면도, 제2도는 본 발명의 T형 가스분가기가 설치된 반응로를 나타낸 평면도, 제3도는 본 발명의 L형 가스분사기가 설치된 반응로를 나타낸 평면도, 제4도는 본 발명의 가스분사기 배기구가 설치된 반응로의 단면도, 제5도는 본 발명의 가스분사기가 설치된 광화학 증착장치의 요부 단면도,1 is a plan view showing a reactor equipped with a type I gas injector of the present invention, FIG. 2 is a plan view showing a reactor equipped with a T-type gas injector according to the present invention, and FIG. 4 is a cross-sectional view of the reactor in which the gas injector exhaust port of the present invention is installed, FIG.

Claims (6)

급속열처리 장치에 있어서, 외부의 반응가스 주입구(22)와 연결되고 반응로 몸체(10)의 뒷벽 요홈부(12)에 설치된 가스분사기(20)에는 상향으로 경사각을 이룬 원형의 가스분사 구멍(21)을 다수개 형성하며, 반응로 몸체(10)의 앞쪽에는 배기판(30)의 배기구멍(31)과 공간(34)을 통하여 배기다기관(32) 및 배기라인(33)을 연결하여서 구성됨을 특징으로 하는 광화학 및 급속열처리 장치용 가스분사기 및 배기구.In the rapid heat treatment apparatus, a circular gas injection hole (21) connected to an external reaction gas inlet (22) and having an inclined angle upward in a gas injector (20) installed in the rear wall recess (12) of the reactor body (10). And a plurality of), and the exhaust manifold 32 and the exhaust line 33 are connected to the front of the reactor body 10 through the exhaust hole 31 and the space 34 of the exhaust plate 30. Gas injectors and exhaust ports for photochemical and rapid heat treatment devices. 제1항에 있어서, 석영관으로 제작하는 가스분사기(20)에는 일정각도 상향 경사진 다수의 가스분사 구멍(21)이 정확히 반지름 방향으로 유지되도록 형성한 광화학 증착장치 및 급속열처리 장치용 가스분사기 및 배기구.The gas injector 20 of claim 1, wherein the gas injector 20 made of a quartz tube has a plurality of gas injecting holes 21 inclined upwardly at a predetermined angle so as to be maintained exactly in a radial direction. Air vent. 제1항에 있어서, 가스분사기(20)가 반응로 몸체(10)의 요홈부(12)에 완전히 내설되도록 하여 광에너지에 의한 파열을 방지하도록 한 광화학 증착장치 및 급속열처리 장치용 가스분사기 및 배기구.The gas injector and exhaust port of claim 1, wherein the gas injector 20 is completely installed in the recess 12 of the reactor body 10 to prevent rupture due to light energy. . 제1항에 있어서, 가스분사기(20)는 플랜지(23)와 플랜지 고정구(24) 및 어뎁터(25)에 의해 반응로 몸체(10)에 고정하여 분리착탈이 용이하도록 한 광화학 증착장치 및 급속열처리 장치용 가스분사기 및 배기구.The photochemical vapor deposition apparatus and rapid heat treatment of claim 1, wherein the gas injector 20 is fixed to the reactor body 10 by the flange 23, the flange fixing member 24, and the adapter 25 to facilitate separation and detachment. Gas injectors and exhaust vents for equipment. 제1항에 있어서, 배기구에는 배기판(30)에 폭이 좁은 슬롯홈의 배기구멍(31)을 뚫고 그 아래 공간(34)을 형성하여 공정가스의 속도벡터가 일정하도록 한 광화학 증착장치 및 급속열처리 장치용 가스분사기 및 배기구.The photochemical vapor deposition apparatus and rapid thermal treatment of claim 1, wherein the exhaust port has a narrow slot groove formed in the exhaust plate 30, and a space 34 is formed therein so that the velocity vector of the process gas is constant. Gas injectors and exhaust vents for equipment. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019900007232A 1990-05-21 1990-05-21 Gas sprayer and exhausting module KR930001897B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019900007232A KR930001897B1 (en) 1990-05-21 1990-05-21 Gas sprayer and exhausting module

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019900007232A KR930001897B1 (en) 1990-05-21 1990-05-21 Gas sprayer and exhausting module

Publications (2)

Publication Number Publication Date
KR910020816A true KR910020816A (en) 1991-12-20
KR930001897B1 KR930001897B1 (en) 1993-03-19

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20220122824A1 (en) * 2020-10-20 2022-04-21 Ap Systems Inc. Thin film manufacturing apparatus

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101513504B1 (en) * 2013-08-01 2015-04-23 주식회사 유진테크 Substrate processing apparatus

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20220122824A1 (en) * 2020-10-20 2022-04-21 Ap Systems Inc. Thin film manufacturing apparatus
KR20220052119A (en) * 2020-10-20 2022-04-27 에이피시스템 주식회사 Thin film processing apparatus
US11967492B2 (en) 2020-10-20 2024-04-23 Ap Systems Inc. Thin film manufacturing apparatus

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