KR910017665A - Semiconductor device manufacturing method - Google Patents

Semiconductor device manufacturing method Download PDF

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Publication number
KR910017665A
KR910017665A KR1019900003000A KR900003000A KR910017665A KR 910017665 A KR910017665 A KR 910017665A KR 1019900003000 A KR1019900003000 A KR 1019900003000A KR 900003000 A KR900003000 A KR 900003000A KR 910017665 A KR910017665 A KR 910017665A
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KR
South Korea
Prior art keywords
ion implantation
semiconductor device
device manufacturing
etched
silicon
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Application number
KR1019900003000A
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Korean (ko)
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KR930004722B1 (en
Inventor
안형근
Original Assignee
문정환
금성일렉트론 주식회사
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Priority to KR1019900003000A priority Critical patent/KR930004722B1/en
Publication of KR910017665A publication Critical patent/KR910017665A/en
Application granted granted Critical
Publication of KR930004722B1 publication Critical patent/KR930004722B1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)

Abstract

내용 없음No content

Description

반도체 소자 제조방법Semiconductor device manufacturing method

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제 1도는 본 발명의 공정순서도.1 is a process flow chart of the present invention.

Claims (2)

기판(1)에 n+매몰층(2)을 형성하고 하부 격리층(3)을 형성한 후 에피층(4)을 성장시키며 건식 혹은 습식 식각 방법에 의해 실리콘을 식각하고 p격리층(5)영역을 형성한 후 n+이온주입으로 디프콜렉터(6)를 형성하며 이어서 B이온 주입으로 베이스(7)를 형성하고 CVD옥사이드를 디포지션 및 어닐링하고 As이온주입으로 에미터(8)를 형성함을 특징으로 하는 반도체 소자 제조방법.After the n + buried layer 2 is formed on the substrate 1 and the lower isolation layer 3 is formed, the epi layer 4 is grown, silicon is etched by a dry or wet etching method, and the p isolation layer 5 is formed. After forming the region, the diff collector 6 is formed by n + ion implantation, followed by the formation of the base 7 by B ion implantation, and the deposition and annealing of CVD oxide and the emitter 8 by As ion implantation. A semiconductor device manufacturing method characterized in that. 제1항에 있어서, 실리콘이 식각되는 깊이는 접합용량의 설정치에 따라 가변할 수 있음을 특증으로 하는 반도체 소자 제조방법.The method of claim 1, wherein the depth at which silicon is etched may vary depending on a set value of a junction capacitance. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019900003000A 1990-03-07 1990-03-07 Manufacturing method of semiconductor element KR930004722B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019900003000A KR930004722B1 (en) 1990-03-07 1990-03-07 Manufacturing method of semiconductor element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019900003000A KR930004722B1 (en) 1990-03-07 1990-03-07 Manufacturing method of semiconductor element

Publications (2)

Publication Number Publication Date
KR910017665A true KR910017665A (en) 1991-11-05
KR930004722B1 KR930004722B1 (en) 1993-06-03

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ID=19296743

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019900003000A KR930004722B1 (en) 1990-03-07 1990-03-07 Manufacturing method of semiconductor element

Country Status (1)

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KR (1) KR930004722B1 (en)

Also Published As

Publication number Publication date
KR930004722B1 (en) 1993-06-03

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