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Application filed by 이헌조, 주식회사 금성사filedCritical이헌조
Priority to KR1019890017491ApriorityCriticalpatent/KR910010784A/en
Publication of KR910010784ApublicationCriticalpatent/KR910010784A/en
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.
제2도는 본 발명의 BTRS레이저 제조 공정도.2 is a BTRS laser manufacturing process diagram of the present invention.
Claims (1)
P-GaAs기판(1)위에 전류의 흐름을 P-n 접합면의 일정부분으로 제한하기 위하여 n-GaAs블록킹층(2)을 성장시키고 첫번째 사진석판 공정으로 리지(3)를 형성시키며 두번째 사진 석판 공정으로 리지(3)가운데에 좁은 채널(4)을 만든후 통상의 P-클래드층(5)과 활성층(6), n-클래드층(7). n-캡층(8)을 순차적으로 형성시켜 매우 얇은 활성층을 제조함을 특징으로 하는 BTRS 레이저 제조방법.In order to limit the flow of current on the PG a A s substrate 1 to a portion of the Pn junction surface, the nG a A s blocking layer 2 is grown and the ridge 3 is formed by the first photolithography process and the second photo slab In the process, a narrow channel 4 is formed in the middle of the ridge 3, and then a conventional P-clad layer 5, an active layer 6, and an n-clad layer 7 are formed. Method for manufacturing a BTRS laser, characterized in that to form a very thin active layer by sequentially forming the n-cap layer (8).※ 참고 사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.