KR910010622A - 바이폴라트랜지스터의 제조방법 - Google Patents

바이폴라트랜지스터의 제조방법

Info

Publication number
KR910010622A
KR910010622A KR1019900018866A KR900018866A KR910010622A KR 910010622 A KR910010622 A KR 910010622A KR 1019900018866 A KR1019900018866 A KR 1019900018866A KR 900018866 A KR900018866 A KR 900018866A KR 910010622 A KR910010622 A KR 910010622A
Authority
KR
South Korea
Prior art keywords
manufacturing
bipolar transistor
bipolar
transistor
Prior art date
Application number
KR1019900018866A
Other languages
English (en)
Other versions
KR940000386B1 (ko
Inventor
야스노부 고다이라
Original Assignee
가부시키가이샤 도시바
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시키가이샤 도시바 filed Critical 가부시키가이샤 도시바
Publication of KR910010622A publication Critical patent/KR910010622A/ko
Application granted granted Critical
Publication of KR940000386B1 publication Critical patent/KR940000386B1/ko

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/2658—Bombardment with radiation with high-energy radiation producing ion implantation of a molecular ion, e.g. decaborane
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66234—Bipolar junction transistors [BJT]
    • H01L29/66242—Heterojunction transistors [HBT]

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • High Energy & Nuclear Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Ceramic Engineering (AREA)
  • Bipolar Transistors (AREA)
KR1019900018866A 1989-11-21 1990-11-21 바이폴라트랜지스터의 제조방법 KR940000386B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP01-302660 1989-11-21
JP1302660A JPH0797590B2 (ja) 1989-11-21 1989-11-21 バイポーラトランジスタの製造方法

Publications (2)

Publication Number Publication Date
KR910010622A true KR910010622A (ko) 1991-06-29
KR940000386B1 KR940000386B1 (ko) 1994-01-19

Family

ID=17911656

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019900018866A KR940000386B1 (ko) 1989-11-21 1990-11-21 바이폴라트랜지스터의 제조방법

Country Status (3)

Country Link
US (1) US5126278A (ko)
JP (1) JPH0797590B2 (ko)
KR (1) KR940000386B1 (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100839272B1 (ko) * 2005-12-27 2008-06-17 산요덴키가부시키가이샤 반도체 장치 및 그 제조 방법

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0521448A (ja) * 1991-07-10 1993-01-29 Sharp Corp 半導体装置の製造方法
US5426069A (en) * 1992-04-09 1995-06-20 Dalsa Inc. Method for making silicon-germanium devices using germanium implantation
DE69433828T2 (de) * 1993-03-16 2005-03-17 Canon K.K. Halbleiteranordnung mit einem lateralen Bipolartransistor, welcher SiGe enthält, und Verfahren zu deren Herstellung
US5388327A (en) * 1993-09-15 1995-02-14 Lsi Logic Corporation Fabrication of a dissolvable film carrier containing conductive bump contacts for placement on a semiconductor device package
US5633177A (en) * 1993-11-08 1997-05-27 Advanced Micro Devices, Inc. Method for producing a semiconductor gate conductor having an impurity migration barrier
TW288200B (en) * 1995-06-28 1996-10-11 Mitsubishi Electric Corp Semiconductor device and process thereof
US5863831A (en) * 1995-08-14 1999-01-26 Advanced Materials Engineering Research, Inc. Process for fabricating semiconductor device with shallow p-type regions using dopant compounds containing elements of high solid solubility
US5773356A (en) * 1996-02-20 1998-06-30 Micron Technology, Inc. Gettering regions and methods of forming gettering regions within a semiconductor wafer
KR100239402B1 (ko) * 1997-04-02 2000-02-01 김영환 반도체 소자의 웰과 그 형성방법
EP0881669B1 (en) 1997-05-30 2005-12-14 STMicroelectronics S.r.l. Manufacturing process of a germanium implanted heterojunction bipolar transistor
US6124546A (en) * 1997-12-03 2000-09-26 Advanced Micro Devices, Inc. Integrated circuit chip package and method of making the same
US6511893B1 (en) 1998-05-05 2003-01-28 Aeroflex Utmc Microelectronics, Inc. Radiation hardened semiconductor device
SE517434C3 (sv) * 1999-10-08 2002-08-07 Ericsson Telefon Ab L M Bipolär högfrekvenskiseltransistor och förfarande för att förbättra karakeristiken för en sådan transistor genom tillägg av indium i transistors bas
US6452338B1 (en) 1999-12-13 2002-09-17 Semequip, Inc. Electron beam ion source with integral low-temperature vaporizer
US20030162360A1 (en) * 2002-02-25 2003-08-28 Beasom James D. Reduced mask count buried layer process
US6830982B1 (en) * 2002-11-07 2004-12-14 Newport Fab, Llc Method for reducing extrinsic base resistance and improving manufacturability in an NPN transistor
US11456374B2 (en) * 2013-03-15 2022-09-27 Matthew H. Kim Germanium-silicon-tin (GeSiSn) heterojunction bipolar transistor devices
US10319836B1 (en) * 2017-12-20 2019-06-11 International Business Machines Corporation Effective junction formation in vertical transistor structures by engineered bottom source/drain epitaxy

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5933860A (ja) * 1982-08-19 1984-02-23 Toshiba Corp 半導体装置およびその製造方法
CA1216962A (en) * 1985-06-28 1987-01-20 Hussein M. Naguib Mos device processing
US4746964A (en) * 1986-08-28 1988-05-24 Fairchild Semiconductor Corporation Modification of properties of p-type dopants with other p-type dopants

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100839272B1 (ko) * 2005-12-27 2008-06-17 산요덴키가부시키가이샤 반도체 장치 및 그 제조 방법

Also Published As

Publication number Publication date
US5126278A (en) 1992-06-30
KR940000386B1 (ko) 1994-01-19
JPH03161936A (ja) 1991-07-11
JPH0797590B2 (ja) 1995-10-18

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