KR910009953A - 진공처리장치의 압반어셈블리 - Google Patents

진공처리장치의 압반어셈블리 Download PDF

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KR910009953A
KR910009953A KR1019890016006A KR890016006A KR910009953A KR 910009953 A KR910009953 A KR 910009953A KR 1019890016006 A KR1019890016006 A KR 1019890016006A KR 890016006 A KR890016006 A KR 890016006A KR 910009953 A KR910009953 A KR 910009953A
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ring
wafer
annular
disk
attached
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KR1019890016006A
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제이 알 로버트 빌링스 브렘 홀
모리스 클로우티어 리처드
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프링크 엠 사죠백
이턴 코오포레이숀
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Publication of KR910009953A publication Critical patent/KR910009953A/ko

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68721—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge clamping, e.g. clamping ring
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
    • C23C14/566—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases using a load-lock chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/568—Transferring the substrates through a series of coating stations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68707—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a robot blade, or gripped by a gripper for conveyance

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Robotics (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Physical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)

Abstract

내용 없음

Description

제목 진공처리장치의 압반어셈블리
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 스퍼터링(sputtering)장치로 잘 보이게 하기 위하여 떼내거나 절단한 부분사시도.
제2도는 본 발명의 로오드록크(load lock)를 부분적으로 자른 확대도.
제3도는 본 발명의 웨이퍼 핸드링 어셈블리(wafer handing assembly)의 단면도.

Claims (10)

  1. 진공분위기에서의 처리를 위하여 반도체 웨이퍼를 확보하는 장치로 그 위에 형성된 웨이퍼받이면을 갖인 원 형판(194)을 구성하고 상기한 판에 관련하여 둘러싸고 배설된 링(192)과 상기한 웨이퍼받이면과 나란히 있게 웨이퍼를 지지하고 있는 상기한 링위에 형성된 첫째 웨이퍼연관수단(257,258)과 상기한 웨이퍼받이면과 연관되어 있는 상기한 웨이퍼를 유지하도록 웨이퍼에 버티어 크램핑력을 내는 상기한 링위에 형성된 제2웨이퍼연관수단(256)을 구성하며; 첫째위치에서 웨이퍼가 상기한 웨이퍼받이면에 대하여 떨어져 있는 상기한 웨이퍼 연관수단에 의하여 지지되어 있고 제2의치에서 상기한 웨이퍼가 상기한 웨이퍼받이면에 의하여 지지되어 있으며, 상기한 제2웨이퍼연관수단에 의하여 연결되게 된 것 사이의 상기한 링을 움직이는 수단들(222)이 있는 것을 특징으로 하는 구성으로 된 반도체 웨이퍼 확보 장치.
  2. 제1항에 있어서, 상기한 첫째 웨이퍼연관수단(257,258)이 상기한 링에서 안쪽으로 뻗어 있는 다수의 첫째 돌기들을 구성하며, 상기한 제2웨이퍼연결수단(256)이 상기한 첫째돌기에서 축방향으로 간격을 두고 상기한 링으로부터 안쪽으로 뻗어 있는 구성을 하며 상기한 링은 웨이퍼가 링축에 대하여 수직으로 상기한 링에 들어가게 하며 첫째와 제2돌기사이에 들어가게 하는 위치내에서 그 안에 형성된 원주형 홈 구멍(255)을 갖고 있는 것을 특징으로 하는 구성을 한 확보장치.
  3. 제2항에 있어서, 상기한 판은 상기한 첫째돌기와 나란히 그안에 형성된 축방향홈구멍을 갖고 있어 틈새를 마련하여 상기한 링이 그의 첫째번위치에서 제2위치로 이동된때 상기한 돌기에 알맞게 되어 있는 확보장치.
  4. 제1항에 있어서, 상기한 링(192)이 첫째링부품(251)을 구성하고 제2링부품(252)이 첫째링 부품과 동심이 되고 축방향으로 거기서 떨어져 있으며 다수의 스프링부품들(254)이 상기한 첫째와 제2링부품들을 연결하고 있는 구성을 한 확보장치.
  5. 제1, 제2, 제3 또는 제4항의 어느하나에 있어서, 상기한 링을 움직이는 수단들(222)이 상기한 링의 축에 병렬인 축을 갖은 고리형 실린더(228)를 구성하고 상기한 고리형 실린더내에 수용된 고리형 피스톤(232)과 상기한 고리형 피스톤을 링에 연결하는 수단들(236)을 구성한 확보장치.
  6. 제5항에 있어서 상기한 수단이 고리형 피스톤을 상기한 링에 연결하고 상기한 고리형 피스톤에 고정된 다수의 로드(238)를 구성하고 상기한 고리형 실린더의 외부쪽으로 뻗어 있으며 상기한 로드들은 상기한 링에 부착되어 있는 수단들(246,247,248)을 구성한 확보장치.
  7. 제6항에 있어서 상기한 고리형 실린더가 그의 마주보는 면안에 형성한 고리형 우물을 갖이며 상기한 우물의 열린구멍을 넘어 받아지게 되어 있고 상기한 고리형 부품에 부착된 고리형 폐쇄부(230)와 상기한 우물이 상기한 피스톤의 어느쪽이건 가압되게 조작 가능한 수단들을 구성한 확보장치.
  8. 제7항에 있어서 상기한 하나 또는 그 이상의 로드가 상기한 고리형 부품의 폐쇄된 면을 통하여 뻗어 있고 상기한 폐쇄부를 통하여 뻗어 있는 확보장치.
  9. 제7항에 있어서 그 장치는 상기한 로드들의 각 끝부의 하나에 조작가능하게 부착된 벨로우부품(250)을 구성하며 상기한 고리형부품에 대하여도 반대끝에 부착되어 있는 구성을 하며 한편 고정시일은 상기한 우물모양홈과 상기한 고리형부품외부대기 사이에서 효력을 내게 구성되어 있는 진공 밀봉수단을 포함하고 있는 구성을 한 확보 장치.
  10. 제9항에 있어서 그 장치가 상기한 판을 지지하고 있는 프레임부품(186)을 포함하고 있고 상기한 고리형부품이 상기한 프레임부품에 부착되어 있는 수단(227)을 포함하며, 상기한 진공시일은 상기한 고리형부품과 프레임 부품사이에 수용된 첫째 디스크(244)를 포함하고 상기한 축이 뻗어가서 관통하여 형성된 간격부를 갖이며 상기한 첫째 디스크와 프레임부품사이에 배설된 유체밀봉수단들(245)을 포함하며 상기한 첫째 디스크의 외부쪽인 축에 부착된 제2디스크와 상기한 제2디스크와 축 사이에 배설된 유체밀봉수단들과 상기한 첫째 디스크에 대한 하나의 끝과 제2디스크에 대한 반대쪽끝에 부착되어 있는 벨로우부품을 포함하고 있는 확보장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019890016006A 1988-11-04 1989-11-04 진공처리장치의 압반어셈블리 KR910009953A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US267421 1988-11-04
US07/267,421 US4944860A (en) 1988-11-04 1988-11-04 Platen assembly for a vacuum processing system

Publications (1)

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KR910009953A true KR910009953A (ko) 1991-06-28

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US (1) US4944860A (ko)
EP (1) EP0367488A3 (ko)
JP (1) JPH02179874A (ko)
KR (1) KR910009953A (ko)
CA (1) CA1303254C (ko)

Families Citing this family (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5906688A (en) * 1989-01-11 1999-05-25 Ohmi; Tadahiro Method of forming a passivation film
US5591267A (en) * 1988-01-11 1997-01-07 Ohmi; Tadahiro Reduced pressure device
US5683072A (en) * 1988-11-01 1997-11-04 Tadahiro Ohmi Thin film forming equipment
US5395446A (en) * 1988-11-21 1995-03-07 Kabushiki Kaisha Toshiba Semiconductor treatment apparatus
US5789086A (en) * 1990-03-05 1998-08-04 Ohmi; Tadahiro Stainless steel surface having passivation film
DE3943478C2 (de) * 1989-05-08 1995-11-16 Philips Electronics Nv Werkstückträger für ein scheibenförmiges Werkstück, sowie Vakuumbehandlungsanlage
US5227708A (en) * 1989-10-20 1993-07-13 Applied Materials, Inc. Two-axis magnetically coupled robot
US5447409A (en) * 1989-10-20 1995-09-05 Applied Materials, Inc. Robot assembly
EP0858867A3 (en) * 1989-10-20 1999-03-17 Applied Materials, Inc. Robot apparatus
US5154730A (en) * 1991-05-17 1992-10-13 Materials Research Corporation Semiconductor wafer processing module having an inclined rotating wafer handling turret and a method of using the module
JPH04358071A (ja) * 1991-06-05 1992-12-11 Mitsubishi Electric Corp 真空処理装置
DE4201211C2 (de) * 1992-01-18 2001-04-26 Leybold Ag Beschichtungsanlage
US5295777A (en) * 1992-12-23 1994-03-22 Materials Research Corporation Wafer transport module with rotatable and horizontally extendable wafer holder
US5376862A (en) * 1993-01-28 1994-12-27 Applied Materials, Inc. Dual coaxial magnetic couplers for vacuum chamber robot assembly
US5329097A (en) * 1993-05-19 1994-07-12 The United States Of America As Represented By The Secretary Of The Navy Compact substrate heater for use in an oxidizing atmosphere
US6123864A (en) * 1993-06-02 2000-09-26 Applied Materials, Inc. Etch chamber
US5804042A (en) * 1995-06-07 1998-09-08 Tokyo Electron Limited Wafer support structure for a wafer backplane with a curved surface
US5605574A (en) * 1995-09-20 1997-02-25 Kabushiki Kaisha Toshiba Semiconductor wafer support apparatus and method
KR100318724B1 (ko) * 1996-04-18 2002-04-22 니시무로 타이죠 음극선관의제조방법및그장치
US5772773A (en) * 1996-05-20 1998-06-30 Applied Materials, Inc. Co-axial motorized wafer lift
US6075375A (en) * 1997-06-11 2000-06-13 Applied Materials, Inc. Apparatus for wafer detection
IT1293021B1 (it) * 1997-07-10 1999-02-11 Sme Elettronica Spa Modulo di potenza a semiconduttori.
US6084215A (en) * 1997-11-05 2000-07-04 Tokyo Electron Limited Semiconductor wafer holder with spring-mounted temperature measurement apparatus disposed therein
US6406545B2 (en) 1999-07-27 2002-06-18 Kabushiki Kaisha Toshiba Semiconductor workpiece processing apparatus and method
US6350317B1 (en) * 1999-12-30 2002-02-26 Lam Research Corporation Linear drive system for use in a plasma processing system
WO2006054663A1 (ja) * 2004-11-22 2006-05-26 Sharp Kabushiki Kaisha 基板保持装置および基板処理装置ならびに液晶表示装置
KR100829923B1 (ko) * 2006-08-30 2008-05-16 세메스 주식회사 스핀헤드 및 이를 이용하는 기판처리방법
US20090277388A1 (en) * 2008-05-09 2009-11-12 Applied Materials, Inc. Heater with detachable shaft
US9421617B2 (en) 2011-06-22 2016-08-23 Tel Nexx, Inc. Substrate holder
US8613474B2 (en) 2011-07-06 2013-12-24 Tel Nexx, Inc. Substrate loader and unloader having a Bernoulli support
US8454056B2 (en) 2011-07-28 2013-06-04 Senior Investments Gmbh Double strap coupling apparatus
JP5886700B2 (ja) * 2012-07-09 2016-03-16 東京エレクトロン株式会社 伝熱シート貼付装置及び伝熱シート貼付方法
JP6114708B2 (ja) * 2013-05-27 2017-04-12 東京エレクトロン株式会社 基板脱離検出装置及び基板脱離検出方法、並びにこれらを用いた基板処理装置及び基板処理方法
US20140361800A1 (en) * 2013-06-05 2014-12-11 Qualcomm Incorporated Method and apparatus for high volume system level testing of logic devices with pop memory
US11802340B2 (en) * 2016-12-12 2023-10-31 Applied Materials, Inc. UHV in-situ cryo-cool chamber
US20190272983A1 (en) * 2018-03-01 2019-09-05 Varian Semiconductor Equipment Associates, Inc. Substrate halo arrangement for improved process uniformity
CN109468600B (zh) * 2018-12-25 2021-03-05 合肥鑫晟光电科技有限公司 溅射***和沉积方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4282924A (en) * 1979-03-16 1981-08-11 Varian Associates, Inc. Apparatus for mechanically clamping semiconductor wafer against pliable thermally conductive surface
US4522697A (en) * 1983-12-22 1985-06-11 Sputtered Films, Inc. Wafer processing machine
DE3411208A1 (de) * 1984-03-27 1985-10-10 Leybold-Heraeus GmbH, 5000 Köln Haltevorrichtung fuer substrate, insbesondere in vakuum-beschichtungsanlagen
US4534314A (en) * 1984-05-10 1985-08-13 Varian Associates, Inc. Load lock pumping mechanism
JPH07105345B2 (ja) * 1985-08-08 1995-11-13 日電アネルバ株式会社 基体処理装置
US4705951A (en) * 1986-04-17 1987-11-10 Varian Associates, Inc. Wafer processing system
US4724621A (en) * 1986-04-17 1988-02-16 Varian Associates, Inc. Wafer processing chuck using slanted clamping pins
US4788994A (en) * 1986-08-13 1988-12-06 Dainippon Screen Mfg. Co. Wafer holding mechanism
ATE111261T1 (de) * 1986-12-19 1994-09-15 Applied Materials Inc Plasmaätzvorrichtung mit magnetfeldverstärkung.

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EP0367488A3 (en) 1991-02-06
US4944860A (en) 1990-07-31
EP0367488A2 (en) 1990-05-09
CA1303254C (en) 1992-06-09
JPH02179874A (ja) 1990-07-12

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