KR910001747U - 엔모오스 인버터 회로 - Google Patents

엔모오스 인버터 회로

Info

Publication number
KR910001747U
KR910001747U KR2019890009615U KR890009615U KR910001747U KR 910001747 U KR910001747 U KR 910001747U KR 2019890009615 U KR2019890009615 U KR 2019890009615U KR 890009615 U KR890009615 U KR 890009615U KR 910001747 U KR910001747 U KR 910001747U
Authority
KR
South Korea
Prior art keywords
inverter circuit
nmos inverter
nmos
circuit
inverter
Prior art date
Application number
KR2019890009615U
Other languages
English (en)
Other versions
KR940007182Y1 (ko
Inventor
김영호
Original Assignee
금성일렉트론 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 금성일렉트론 주식회사 filed Critical 금성일렉트론 주식회사
Priority to KR2019890009615U priority Critical patent/KR940007182Y1/ko
Publication of KR910001747U publication Critical patent/KR910001747U/ko
Application granted granted Critical
Publication of KR940007182Y1 publication Critical patent/KR940007182Y1/ko

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/01—Modifications for accelerating switching
    • H03K19/017—Modifications for accelerating switching in field-effect transistor circuits
    • H03K19/01707—Modifications for accelerating switching in field-effect transistor circuits in asynchronous circuits
    • H03K19/01721—Modifications for accelerating switching in field-effect transistor circuits in asynchronous circuits by means of a pull-up or down element
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H03K19/094—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
    • H03K19/0944—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET
    • H03K19/09441—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET of the same canal type
    • H03K19/09443—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET of the same canal type using a combination of enhancement and depletion transistors
    • H03K19/09445—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET of the same canal type using a combination of enhancement and depletion transistors with active depletion transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H03K19/094—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
    • H03K19/0944—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET
    • H03K19/0948—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET using CMOS or complementary insulated gate field-effect transistors
    • H03K19/09482—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET using CMOS or complementary insulated gate field-effect transistors using a combination of enhancement and depletion transistors
    • H03K19/09485—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET using CMOS or complementary insulated gate field-effect transistors using a combination of enhancement and depletion transistors with active depletion transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Power Engineering (AREA)
  • Logic Circuits (AREA)
KR2019890009615U 1989-06-30 1989-06-30 엔모오스 인버터 회로 KR940007182Y1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR2019890009615U KR940007182Y1 (ko) 1989-06-30 1989-06-30 엔모오스 인버터 회로

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR2019890009615U KR940007182Y1 (ko) 1989-06-30 1989-06-30 엔모오스 인버터 회로

Publications (2)

Publication Number Publication Date
KR910001747U true KR910001747U (ko) 1991-01-25
KR940007182Y1 KR940007182Y1 (ko) 1994-10-14

Family

ID=19287847

Family Applications (1)

Application Number Title Priority Date Filing Date
KR2019890009615U KR940007182Y1 (ko) 1989-06-30 1989-06-30 엔모오스 인버터 회로

Country Status (1)

Country Link
KR (1) KR940007182Y1 (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102577282B1 (ko) * 2022-03-30 2023-09-12 호서대학교 산학협력단 출력특성이 개선된 인버터 및 부트스트랩 인버터

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102577282B1 (ko) * 2022-03-30 2023-09-12 호서대학교 산학협력단 출력특성이 개선된 인버터 및 부트스트랩 인버터

Also Published As

Publication number Publication date
KR940007182Y1 (ko) 1994-10-14

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Payment date: 20030919

Year of fee payment: 10

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